Patents by Inventor Roy Lambertson
Roy Lambertson has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20120087174Abstract: A memory using mixed valence conductive oxides is disclosed. The memory includes a mixed valence conductive oxide that is less conductive in its oxygen deficient state and a mixed electronic ionic conductor that is an electrolyte to oxygen and promotes an electric field effective to cause oxygen ionic motion.Type: ApplicationFiled: December 16, 2011Publication date: April 12, 2012Applicant: UNITY SEMICONDUCTOR CORPORATIONInventors: DARRELL RINERSON, CHRISTOPHE J. CHEVALLIER, WAYNE KINNEY, ROY LAMBERTSON, STEVEN W. LONGCOR, JOHN E. SANCHEZ, JR., LAWRENCE SCHLOSS, PHILIP F.S. SWAB, EDMOND WARD
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Publication number: 20120037879Abstract: An ion barrier layer made from a dielectric material in contact with an electronically insulating layer is operative to prevent mobile ions transported into the electronically insulating layer from passing through the ion barrier layer and into adjacent layers during data operations on a non-volatile memory cell. A conductive oxide layer in contact with the electronically insulating layer is the source of the mobile ions. A programming data operation is operative to transport a portion of the mobile ions into the electronically insulating layer and an erase data operation is operative to transport the mobile ions back into the conductive oxide layer. When the portion is positioned in the electronically insulating layer the memory cell stores data as a programmed conductivity profile and when a substantial majority of the mobile ions are positioned in the conductive oxide layer the memory cell stores data as an erased conductivity profile.Type: ApplicationFiled: October 25, 2011Publication date: February 16, 2012Applicant: UNITY SEMICONDUCTOR CORPORATIONInventors: LAWRENCE SCHLOSS, RENE MEYER, WAYNE KINNEY, ROY LAMBERTSON, JULIE CASPERSON BREWER
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Publication number: 20120020143Abstract: A two-terminal memory cell including a Schottky metal-semiconductor contact as a selection device (SD) allows selection of two-terminal cross-point memory array operating voltages that eliminate “half-select leakage current” problems present when other types of non-ohmic devices are used. The SD structure can comprise a “metal/oxide semiconductor/metal” or a “metal/lightly-doped single layer polycrystalline silicon.” The memory cell can include a two-terminal memory element including at least one conductive oxide layer (e.g., a conductive metal oxide—CMO, such as a perovskite or a conductive binary oxide) and an electronically insulating layer (e.g., yttria-stabilized zirconia—YSZ) in contact with the CMO. The SD can be included in the memory cell and configured electrically in series with the memory element. The memory cell can be positioned in a two-terminal cross-point array between a pair of conductive array lines (e.g., a bit line and a word line) across which voltages for data operations are applied.Type: ApplicationFiled: September 27, 2011Publication date: January 26, 2012Applicant: UNITY SEMICONDUCTOR CORPORATIONInventors: ROY LAMBERTSON, LAWRENCE SCHLOSS
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Publication number: 20110291067Abstract: A threshold device including a plurality of adjacent tunnel barrier layers that are in contact with one another and are made from a plurality of different dielectric materials is disclosed. A memory plug having first and second terminals includes, electrically in series with the first and second terminals, the threshold device and a memory element that stores data as a plurality of conductivity profiles. The threshold device is operative to impart a characteristic I-V curve that defines current flow through the memory element as a function of applied voltage across the terminals during data operations. The threshold device substantially reduces or eliminates current flow through half-selected or un-selected memory plugs and allows a sufficient magnitude of current to flow through memory plugs that are selected for read and write operations. The threshold device reduces or eliminates data disturb in half-selected memory plugs and increases S/N ratio during read operations.Type: ApplicationFiled: August 9, 2011Publication date: December 1, 2011Applicant: UNITY SEMICONDUCTOR CORPORATIONInventors: JULIE CASPERSON BREWER, DARRELL RINERSON, CHRISTOPHE J. CHEVALLIER, WAYNE KINNEY, ROY LAMBERTSON, LAWRENCE SCHLOSS
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Patent number: 8045364Abstract: An ion barrier layer made from a dielectric material in contact with an electronically insulating layer is operative to prevent mobile ions transported into the electronically insulating layer from passing through the ion barrier layer and into adjacent layers during data operations on a non-volatile memory cell. A conductive oxide layer in contact with the electronically insulating layer is the source of the mobile ions. A programming data operation is operative to transport a portion of the mobile ions into the electronically insulating layer and an erase data operation is operative to transport the mobile ions back into the conductive oxide layer. When the portion is positioned in the electronically insulating layer the memory cell stores data as a programmed conductivity profile and when a substantial majority of the mobile ions are positioned in the conductive oxide layer the memory cell stores data as an erased conductivity profile.Type: GrantFiled: December 18, 2009Date of Patent: October 25, 2011Inventors: Lawrence Schloss, Rene Meyer, Wayne Kinney, Roy Lambertson, Julie Casperson Brewer
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Patent number: 8031510Abstract: An ion barrier layer made from a dielectric material in contact with an electronically insulating layer is operative to prevent mobile ions transported into the electronically insulating layer from passing through the ion barrier layer and into adjacent layers during data operations on a non-volatile memory cell. A conductive oxide layer in contact with the electronically insulating layer is the source of the mobile ions. A programming data operation is operative to transport a portion of the mobile ions into the electronically insulating layer and an erase data operation is operative to transport the mobile ions back into the conductive oxide layer. When the portion is positioned in the electronically insulating layer the memory cell stores data as a programmed conductivity profile and when a substantial majority of the mobile ions are positioned in the conductive oxide layer the memory cell stores data as an erased conductivity profile.Type: GrantFiled: July 6, 2010Date of Patent: October 4, 2011Inventors: Lawrence Schloss, Rene Meyer, Wayne Kinney, Roy Lambertson, Julie Casperson Brewer
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Patent number: 8027215Abstract: A two-terminal memory cell including a Schottky metal-semiconductor contact as a non-ohmic device (NOD) allows selection of two-terminal cross-point memory array operating voltages that eliminate “half-select leakage current” problems present when other types of non-ohmic devices are used. The NOD structure can comprise a “metal/oxide semiconductor/metal” or a “metal/lightly-doped single layer polycrystalline silicon.” The memory cell can include a two-terminal memory element including at least one conductive oxide layer (e.g., a conductive metal oxide—CMO, such as a perovskite or a conductive binary oxide) and an electronically insulating layer (e.g., yttria-stabilized zirconia—YSZ) in contact with the CMO. The NOD can be included in the memory cell and configured electrically in series with the memory element. The memory cell can be positioned in a two-terminal cross-point array between a pair of conductive array lines (e.g., a bit line and a word line) across which voltages for data operations are applied.Type: GrantFiled: September 2, 2009Date of Patent: September 27, 2011Inventors: Roy Lambertson, Lawrence Schloss
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Patent number: 7995371Abstract: A threshold device including a plurality of adjacent tunnel barrier layers that are in contact with one another and are made from a plurality of different dielectric materials is disclosed. A memory plug having first and second terminals includes, electrically in series with the first and second terminals, the threshold device and a memory element that stores data as a plurality of conductivity profiles. The threshold device is operative to impart a characteristic I-V curve that defines current flow through the memory element as a function of applied voltage across the terminals during data operations. The threshold device substantially reduces or eliminates current flow through half-selected or un-selected memory plugs and allows a sufficient magnitude of current to flow through memory plugs that are selected for read and write operations. The threshold device reduces or eliminates data disturb in half-selected memory plugs and increases S/N ratio during read operations.Type: GrantFiled: July 26, 2007Date of Patent: August 9, 2011Inventors: Darrell Rinerson, Julie Casperson Brewer, Christophe J. Chevallier, Wayne Kinney, Roy Lambertson, Lawrence Schloss
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Publication number: 20110149634Abstract: An ion barrier layer made from a dielectric material in contact with an electronically insulating layer is operative to prevent mobile ions transported into the electronically insulating layer from passing through the ion barrier layer and into adjacent layers during data operations on a non-volatile memory cell. A conductive oxide layer in contact with the electronically insulating layer is the source of the mobile ions. A programming data operation is operative to transport a portion of the mobile ions into the electronically insulating layer and an erase data operation is operative to transport the mobile ions back into the conductive oxide layer. When the portion is positioned in the electronically insulating layer the memory cell stores data as a programmed conductivity profile and when a substantial majority of the mobile ions are positioned in the conductive oxide layer the memory cell stores data as an erased conductivity profile.Type: ApplicationFiled: December 18, 2009Publication date: June 23, 2011Applicant: UNITY SEMICONDUCTOR CORPORATIONInventors: Lawrence Schloss, Rene Meyer, Wayne Kinney, Roy Lambertson, Julie Casperson Brewer
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Publication number: 20100157710Abstract: A two-terminal memory cell including a Schottky metal-semiconductor contact as a non-ohmic device (NOD) allows selection of two-terminal cross-point memory array operating voltages that eliminate “half-select leakage current” problems present when other types of non-ohmic devices are used. The NOD structure can comprise a “metal/oxide semiconductor/metal” or a “metal/lightly-doped single layer polycrystalline silicon.” The memory cell can include a two-terminal memory element including at least one conductive oxide layer (e.g., a conductive metal oxide—CMO, such as a perovskite or a conductive binary oxide) and an electronically insulating layer (e.g., yttria-stabilized zirconia—YSZ) in contact with the CMO. The NOD can be included in the memory cell and configured electrically in series with the memory element. The memory cell can be positioned in a two-terminal cross-point array between a pair of conductive array lines (e.g., a bit line and a word line) across which voltages for data operations are applied.Type: ApplicationFiled: September 2, 2009Publication date: June 24, 2010Applicant: UNITY SEMICONDUCTOR CORPORATIONInventors: Roy Lambertson, Lawrence Schloss
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Publication number: 20090303773Abstract: A memory using mixed valence conductive oxides is disclosed. The memory includes a mixed valence conductive oxide that is less conductive in its oxygen deficient state and a mixed electronic ionic conductor that is an electrolyte to oxygen and promotes an electric field effective to cause oxygen ionic motion.Type: ApplicationFiled: June 18, 2009Publication date: December 10, 2009Applicant: UNITY SEMICONDUCTOR CORPORATIONInventors: Darrell Rinerson, Roy Lambertson, Christophe Chevallier, Edmond Ward
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Publication number: 20090303772Abstract: A memory using mixed valence conductive oxides is disclosed. The memory includes a mixed valence conductive oxide that is less conductive in its oxygen deficient state and a mixed electronic ionic conductor that is an electrolyte to oxygen and promotes an electric field effective to cause oxygen ionic motion.Type: ApplicationFiled: June 18, 2009Publication date: December 10, 2009Applicant: UNITY SEMICONDUCTOR CORPORATIONInventors: Darrell Rinerson, Christophe Chevallier, Wayne Kinney, Roy Lambertson, John E. Sanchez, JR., Lawrence Schloss, Philip Swab, Edmond Ward
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Publication number: 20090027976Abstract: A threshold device including a plurality of adjacent tunnel barrier layers that are in contact with one another and are made from a plurality of different dielectric materials is disclosed. A memory plug having first and second terminals includes, electrically in series with the first and second terminals, the threshold device and a memory element that stores data as a plurality of conductivity profiles. The threshold device is operative to impart a characteristic I-V curve that defines current flow through the memory element as a function of applied voltage across the terminals during data operations. The threshold device substantially reduces or eliminates current flow through half-selected or un-selected memory plugs and allows a sufficient magnitude of current to flow through memory plugs that are selected for read and write operations. The threshold device reduces or eliminates data disturb in half-selected memory plugs and increases S/N ratio during read operations.Type: ApplicationFiled: July 26, 2007Publication date: January 29, 2009Applicant: UNITY SEMICONDUCTOR CORPORATIONInventors: Julie Casperson Brewer, Darrell Rinerson, Christophe J. Chevallier, Wayne Kinney, Roy Lambertson, Lawrence Schloss
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Publication number: 20060171200Abstract: A memory using a mixed valence conductive oxides. The memory includes a mixed valence conductive oxide that is less conductive in its oxygen deficient state and a mixed electronic ionic conductor that is an electrolyte to oxygen and promotes an electric field effective to cause oxygen ionic motion.Type: ApplicationFiled: March 30, 2005Publication date: August 3, 2006Applicant: UNITY SEMICONDUCTOR CORPORATIONInventors: Darrell Rinerson, Christophe Chevallier, Wayne Kinney, Roy Lambertson, Steven Longcor, John Sanchez, Lawrence Schloss, Philip Swab, Edmond Ward
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Patent number: 6713369Abstract: A method for forming a metal-to-metal antifuse disposed above and insulated from a semiconductor substrate is disclosed. The method comprises forming a first metal layer disposed above and insulated from the semiconductor substrate; forming a layer of antifuse material over and in electrical contact with the first metal layer; forming a second metal layer over and in electrical contact with the layer of antifuse material; and forming at least one barrier layer comprising a layer of TaN between the layer of antifuse material and one of the first and second metal layers.Type: GrantFiled: May 28, 2002Date of Patent: March 30, 2004Assignee: Actel CorporationInventors: Jeewika Ranaweera, Roy Lambertson
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Patent number: 6603142Abstract: A metal-to-metal antifuse disposed above and insulated from a semiconductor substrate comprises a first metal layer disposed above and insulated from the semiconductor substrate. A layer of antifuse material is disposed over and in electrical contact with the first metal layer. A second metal layer is disposed over and in electrical contact with the layer of antifuse material. At least one barrier layer comprising a layer of TaN is disposed between the layer of antifuse material and one of the first and second metal layers.Type: GrantFiled: December 18, 2000Date of Patent: August 5, 2003Assignee: Actel CorporationInventors: Jeewika Ranaweera, Roy Lambertson