Abstract: A dormant mode target semiconductor device within a leakage current target unit is identified for mitigating leakage current to prevent it from reaching catastrophic runaway. A leakage current shift monitor unit is electrically connected to the output node of the leakage current target unit and collects leakage current from the selected target semiconductor device for two consecutive predefined temporal periods and measures the difference between the collected leakage currents. A comparator receives and compares the outputs of the current shift monitor unit and a reference voltage generator. The comparator propagates an alert signal to the leakage current target unit when the leakage voltage output from the leakage current shift monitor unit exceeds the reference voltage, a condition that indicates that the leakage current is about to approach catastrophic runaway levels.

Abstract: a central reference clock is placed in a substantially middle chip of a 3-D chip-stack. The central reference clock is distributed to each child chip of the 3-D chip-stack, so that a plurality of clocks is generated for each individual chip in the 3-D-stack in a synchronous manner. A predetermined number of through-silicon-vias and on-chip wires are employed to form a delay element for each slave clock, ensuring that the clock generated for each child chip is substantially synchronized. Optionally, an on-chip clock trimming circuit is embedded for further precision tuning to eliminate local clock skews.

Abstract: A circuit and a method for extending the lifetime of a semiconductor chip. The circuit including a voltage reference generator, a voltage switch, a threshold voltage regulator device and a threshold voltage monitor device tunes an automatic internal power supply. The voltage reference generator provides one or more reference voltage levels that are transmitted to the voltage switch. The threshold voltage monitor device monitors the threshold voltage of the device, triggering the voltage switch to select a reference level for use as a voltage reference for the regulator when the threshold voltage of the monitored device exceeds a predetermined value. The regulator then converts the external power supply to an internal supply and holds it at the predetermined reference level.

Abstract: One embodiment of the invention includes an image compensation module, an OLED display panel, and an OLED display apparatus. A target current value corresponding to a target gray level is stored in a compensation memory portion. A reference gray level and a reference current value corresponding to the reference gray level are stored in a reference memory portion. A compensation gray level can be obtained by an arithmetic compensation unit according to the target current value, reference gray level, reference current value, and gamma parameter. This may reduce the memory space needed for the compensation and reference memory portions, and compensate the images of the display apparatus and panel so that precise colors can be displayed with a high image quality.

Abstract: A flat panel display, a display driving apparatus thereof and a shift register thereof are disclosed. The shift register is adapted for driving a flat panel display. The shift register receives an input signal and a clock signal. The shift register includes a delay unit and a buffer unit. The delay unit is used to delay the input signal for a half period of the clock signal and then output the delayed input signal. The buffer unit receives the delayed input signal, and provides an extra driving power accordingly. The buffer unit is operated by a fixed first voltage and a fixed second voltage.

Abstract: A shift register circuit includes a latch unit, a leakage current control unit, and a first output unit. The latch unit outputs a latch signal in accordance with a clock signal and an input signal. The first output unit outputs an output signal in accordance with the latch signal. The leakage current control unit is electrically connected between the latch unit and the first output unit for outputting the latch signal to the first output unit in accordance with the clock signal.

Abstract: An OLED display and pixel circuit thereof are provided. The pixel circuit includes first and second switches, first and second PMOS transistors, a capacitor and an OLED. The first switch, controlled by a first scan signal, has a first end receiving a data signal and a second end. The second switch, controlled by a second scan signal, has a third end coupled to the second end and a fourth end. The first PMOS transistor has a source coupled to a high voltage, a drain coupled to the fourth end and a gate coupled to the second end. The second PMOS transistor has a gate coupled to the second end and a source coupled to the high voltage. The capacitor is coupled to the gate of the first PMOS transistor and the high voltage. The OLED has a positive end coupled to a drain of the second PMOS transistor.

Abstract: An apparatus and method for manufacturing low-cost high-density compact active inductor module using existing DRAM, SRAM and logic process integration. The elements of the active inductor modules are formed by three semiconductor devices including nMOS devices, deep-trench capacitors and a polysilicon or TaN resistor. The active inductor modules can be connected in a parallel and/or serial configuration to obtain a wide range of inductance values. The modular active inductors can be advantageously stored in an ASIC library to facilitate a flexible and convenient circuit design.

Abstract: A display having voltage-driven organic light-emitting pixel circuits. Each pixel circuit includes an organic light-emitting diode, a data writing circuit, a capacitor, three transistors, and a switch. The pixel circuit can compensate the threshold voltage variations of low temperature poly silicon thin film transistors. This increases the stability of the voltage-driven organic light-emitting pixel circuits, improves the uniformity of the luminance of the display, and provides a larger aperture ratio for the pixels.

Abstract: A circuit and a method for extending the lifetime of a semiconductor chip. The circuit including a voltage reference generator, a voltage switch, a threshold voltage regulator device and a threshold voltage monitor device tunes an automatic internal power supply. The voltage reference generator provides one or more reference voltage levels that are transmitted to the voltage switch. The threshold voltage monitor device monitors the threshold voltage of the device, triggering the voltage switch to select a reference level for use as a voltage reference for the regulator when the threshold voltage of the monitored device exceeds a predetermined value. The regulator then converts the external power supply to an internal supply and holds it at the predetermined reference level.

Abstract: A shift register circuit has a plurality of shift registers connected in series, each shift register having a phase-shifting element and a pull-high element, wherein the phase-shifting element receives a first input signal, a first clock signal and a second clock signal, and the first clock signal and the second clock signal are complementary in phase. The pull-high element is used for pulling up an output signal to a high logic level, and includes a logic unit, wherein no current path is established in the pull-high element when the shift register is operated in any type of periods.

Abstract: An on-chip circuit to quantitatively measure threshold voltage shifts of a MOSFET. The circuit includes a programmable Vt reference sensor; a programmable Vt monitoring sensor; and a comparator for receiving inputs from the reference and monitoring sensors providing an output flag signal. The shifting of the MOSFET device voltage threshold monitors process variations, geometry sensitivity, plasma damage, stress, and hot carriers and other device damages. The same circuit also measures voltage differences between any two nodes in an integrated circuit chip or wafer.

Abstract: A logic circuit includes a logic unit, a driving unit, and a voltage level adjuster. The logic unit includes an output node having a logic state, the logic unit being coupled to a first voltage reference. The driving unit includes an input node, the driving unit being coupled to a second voltage reference, the driving unit and the first logic unit being constructed from a single type of transistor. The voltage level adjuster provides a control signal that causes the driving unit to reduce a current flowing through the driving unit when the output node of the first logic unit has a first logic state, and causes the driving unit to drive an output node of the logic circuit to a voltage level substantially equal to that of the second voltage reference when the output node of the first logic unit has a second logic state.

Abstract: An on-chip circuit to quantitatively measure threshold voltage shifts of a MOSFET. The circuit includes a programmable Vt reference sensor; a programmable Vt monitoring sensor; and a comparator for receiving inputs from the reference and monitoring sensors providing an output flag signal. The shifting of the MOSFET device voltage threshold monitors process variations, geometry sensitivity, plasma damage, stress, and hot carriers and other device damages. The same circuit also measures voltage differences between any two nodes in an integrated circuit chip or wafer.

Abstract: A shift register includes a control unit, a signal switching unit and a buffer unit. The control unit determines whether to transfer an input signal from a first input terminal to a first output terminal according to a first control signal, and determines whether to conduct a first pre-defined voltage to a second output terminal according to a second control signal. The signal switching unit uses the signal output from the first output terminal as one of the considerations for determining whether to conduct a second pre-defined voltage to a third output terminal, and uses the second control signal as one of the considerations for determining whether to conduct the second pre-defined voltage to the first output terminal. The buffer unit outputs signal according to the signals from the first/third output terminals. Further, at least once, the second control signal is enabled after the first control signal has been enabled.

Abstract: An organic light emitting diode circuit of an organic light emitting display with voltage compensation technique includes a first capacitor, a first TFT, a second TFT, a third TFT, a reset circuit and an OLED. The first TFT has a first terminal for receiving a first voltage, and a second terminal coupled to its gate and a first end of the first capacitor. The second TFT has a first terminal for receiving a second reference voltage and a gate coupled to the gate of the first TFT. The third TFT is coupled to the first capacitor and receives a pixel voltage and scan signal. The reset circuit sets the first end of the first capacitor to have a first voltage level. The OLED has an anode coupled to a second terminal of the second TFT and a cathode for receiving a third reference voltage. The first voltage level is smaller than a voltage level of the first reference voltage.

Abstract: A logic circuit includes a logic unit, a driving unit, and a voltage level adjuster. The logic unit includes an output node having a logic state, the logic unit being coupled to a first voltage reference. The driving unit includes an input node, the driving unit being coupled to a second voltage reference, the driving unit and the first logic unit being constructed from a single type of transistor. The voltage level adjuster provides a control signal that causes the driving unit to reduce a current flowing through the driving unit when the output node of the first logic unit has a first logic state, and causes the driving unit to drive an output node of the logic circuit to a voltage level substantially equal to that of the second voltage reference when the output node of the first logic unit has a second logic state.

Abstract: A bidirectional shift register includes a former stage multiplexer, a latter stage multiplexer, a former stage full-swing shift register, and a latter stage full-swing shift register, all of which have a plurality of registers all of the same type. The former and the latter stage multiplexers output signals according to a forward clock, a backward clock, a forward control signal, and a backward control signal. The former and the latter stage full-swing shift register store the signals output from the former and the latter stage full-swing shift registers respectively.

Abstract: A circuit structure for LCD backlight is disclosed in the present invention. The circuit structure includes an inverter topology, a current balance circuit, and a plurality of loads. The current balance circuit is coupled to the plurality of loads and capable of balancing current of N loads by using N/2-1 balance chokes. The circuit structure may further include a protection circuit which is coupled to the low voltage sides of the plurality of loads. The protection circuit is capable of sensing lamp voltages and providing a feedback signal to a controller. Furthermore, the protection circuit is composed of count-reduced and cost-competitive electronic elements.

Abstract: An amine detecting method. The method includes providing a sensory device coated with an isolated peptide consisting of SEQ ID NO:1, contacting the sensory device with a breath sample, detecting an amine amount present in the sample, and comparing the amine amount with a database to diagnose disorders.