Abstract: Embodiments are further directed to an information processing system for generating a corrected image of a sample. The system includes a detector, a memory communicatively coupled to the detector, and a post-detection image processor communicatively coupled to the memory and the detector. The system is configured to perform a method that includes detecting, by the detector, data of a plurality of moving particles, wherein the data of the plurality of moving particles correspond to an uncorrected image of the sample, and wherein the uncorrected image includes defocus, astigmatism and spherical aberration. The method further includes generating, by the post-detection image processor, a corrected image of the sample based at least in part on processing the detected data of the plurality of moving particles.

Abstract: A force detector and method for using the same includes a movable lens having a spherical surface; a cantilever below the movable lens; a laser above the movable lens configured to emit a beam of light through the movable lens, such that light reflects from the spherical surface and the cantilever; a camera configured to capture images of interference rings produced by the light reflected from the spherical surface and the light reflected from the cantilever; and a processor configured to determine a force between the movable lens and the cantilever based on a change in phase of the interference rings.

Abstract: Embodiments are directed to an information processing system for generating a corrected image of a sample. The system includes a detector, a memory communicatively coupled to the detector, and a post-detection image processor communicatively coupled to the memory and the detector. The detector is configured to detect data of a plurality of moving particles, wherein the data of the plurality of moving particles correspond to an uncorrected image of the sample, and wherein the uncorrected image includes defocus, astigmatism and spherical aberration. The post-detection image processor is configured to generate a corrected image of the sample based at least in part on processing the detected data of the plurality of moving particles.

Abstract: Embodiments are directed to an information processing system for generating a corrected image of a sample. The system includes a detector, a memory communicatively coupled to the detector, and a post-detection image processor communicatively coupled to the memory and the detector. The detector is configured to detect data of a plurality of moving particles, wherein the data of the plurality of moving particles correspond to an uncorrected image of the sample, and wherein the uncorrected image includes defocus, astigmatism and spherical aberration. The post-detection image processor is configured to generate a corrected image of the sample based at least in part on processing the detected data of the plurality of moving particles.

Abstract: Embodiments are further directed to an information processing system for generating a corrected image of a sample. The system includes a detector, a memory communicatively coupled to the detector, and a post-detection image processor communicatively coupled to the memory and the detector. The system is configured to perform a method that includes detecting, by the detector, data of a plurality of moving particles, wherein the data of the plurality of moving particles correspond to an uncorrected image of the sample, and wherein the uncorrected image includes defocus, astigmatism and spherical aberration. The method further includes generating, by the post-detection image processor, a corrected image of the sample based at least in part on processing the detected data of the plurality of moving particles.

Abstract: A composite material includes a carbon nanotube, and plural pentacene molecules bonded to the carbon nanotube. A method of forming the composite layer, includes depositing on a substrate a dispersion of soluble pentacene precursor and carbon nanotubes, heating the dispersion to remove solvent from the dispersion, heating the substrate to convert the pentacene precursor to pentacene and form the carbon nanotube-pentacene composite layer.

Abstract: A method of forming a carbon nanotube-pentacene composite layer, includes depositing on a substrate a dispersion of soluble pentacene precursor and carbon nanotubes, heating the dispersion to remove solvent from the dispersion, and heating the substrate to convert the pentacene precursor to pentacene and form the carbon nanotube-pentacene composite layer.

Abstract: A composite material includes a carbon nanotube, and plural pentacene molecules bonded to the carbon nanotube. A method of forming the composite layer, includes depositing on a substrate a dispersion of soluble pentacene precursor and carbon nanotubes, heating the dispersion to remove solvent from the dispersion, heating the substrate to convert the pentacene precursor to pentacene and form the carbon nanotube-pentacene composite layer.

Abstract: A method (and structure) for controlling a beam used to generate a pattern on a target surface includes generating a beam of charged particles and directing the beam to a mask surface and causing the beam to be either absorbed by or reflected from the mask surface, thereby either precluding or allowing the beam to strike the target surface, based on a reflection characteristic of the mask surface.

Abstract: A method for resetting a spin-transfer based random access memory system, the method comprising, inducing a first current through a first conductor, wherein the first current is operative to propagate a magnetic domain wall in a ferromagnetic film layer and the propagation of the magnetic domain wall is further operative to change the direction of a magnetic state of a first free layer magnet, and inducing a second current only through a second conductor, wherein the second current is operative to further propagate the magnetic domain wall in the ferromagnetic film layer and the propagation of the magnetic domain wall is further operative to change the direction of a magnetic state of a second free layer magnet.

Abstract: An energy filtering microscopy instrument is provided. An objective lens is disposed for reception of electrons in order to form an electron diffraction pattern in a backfocal plane of the objective lens. An entrance aperture disposed in the backfocal plane of the objective lens for filtering a slice of the electron diffraction pattern. A magnetic deflector has an entrance plane and an exit plane. The entrance aperture is disposed in the entrance plane. The magnetic deflector is disposed to receive the slice of the electron diffraction pattern and project an energy dispersed electron diffraction pattern to the exit plane. An exit aperture is disposed in the exit plane of the magnetic deflector for selection of desired electron energy of the energy dispersed electron diffraction pattern.

Abstract: A method (and structure) for controlling a beam used to generate a pattern on a target surface includes generating a beam of charged particles and directing the beam to a mask surface and causing the beam to be either absorbed by or reflected from the mask surface, thereby either precluding or allowing the beam to strike the target surface, based on a reflection characteristic of the mask surface.

Abstract: A method (and structure) for controlling a beam used to generate a pattern on a target surface includes generating a beam of charged particles and directing the beam to a mask surface and causing the beam to be either absorbed by or reflected from the mask surface, thereby either precluding or allowing the beam to strike the target surface, based on a reflection characteristic of the mask surface.

Abstract: An aberration-correcting microscopy instrument is provided. The instrument has a first magnetic deflector disposed for reception of a first non-dispersed electron diffraction pattern. The first magnetic deflector is also configured for projection of a first energy dispersed electron diffraction pattern in an exit plane of the first magnetic deflector. The instrument also has an electrostatic lens disposed in the exit plane of a first magnetic deflector, as well as a second magnetic deflector substantially identical to the first magnetic deflector. The second magnetic deflector is disposed for reception of the first energy dispersed electron diffraction pattern from the electrostatic lens. The second magnetic deflector is also configured for projection of a second non-dispersed electron diffraction pattern in a first exit plane of the second magnetic deflector.

Abstract: A method (and structure) for controlling a beam used to generate a pattern on a target surface includes generating a beam of charged particles and directing the beam to a mask surface and causing the beam to be either absorbed by or reflected from the mask surface, thereby either precluding or allowing the beam to strike the target surface, based on a reflection characteristic of the mask surface.

Abstract: Fabrication of atomic step-free regions on a substrate surface is achieved by first forming a two-dimensional pattern on the substrate. The pattern is preferably a grating comprising an array of troughs or mesas which are separated from one another by a plurality of ridges or trenches. Any atomic steps on the flat top surfaces of the troughs or mesas are moved into barrier regions formed by the ridge or trench sidewalls during a high temperature annealing or deposition step, thereby leaving the flat surfaces of the troughs and mesas free of atomic steps. Structures having step-free regions large enough to accommodate micron sized devices having nanometer sized features are thereby formed.

Abstract: The present invention broadly concerns layered structures of substantially-crystalline materials and processes for making such structures. More particularly, the invention concerns epitaxial growth of a substantially-crystalline layer of a first material on a substantially-crystalline second material different from the first material utilizing an approximately one monolayer thick monovalent surfactant element.

Abstract: The present invention broadly concerns layered structures of substantially-crystalline materials and processes for making such structures. More particularly, the invention concerns epitaxial growth of a substantially-crystalline layer of a first material on a substantially-crystalline second material different from the first material.

Abstract: The present invention is a method of forming conductive structures comprising the steps of providing a silicon substrate having a first surface of atomically clean (111) silicon, forming an epitaxial CaF.sub.2 insulating layer on the first surface, the insulating layer having an exposed surface opposing the first surface, positioning a metallic mask on the exposed surface, irradiating a predetermined portion of the exposed surface so as to decompose the insulating layer beneath the predetermined portion to thereby form a workpiece having a metallic Ca layer on the first surface of the (111) silicon substrate, removing the mask, annealing the workpiece at a predetermined temperature so as to form an epitaxial CaSi.sub.2 conductive structure, wherein a plane coincident with the first surface bisects the conductive structure. According to one aspect of the invention, the energetic ion beam can be a beam of ionizing radiation.