Abstract: An actuator for an optic mount in a vacuum environment includes a bellows around an actuator compartment. The bellows provides a seal around the actuator. A filter assembly is positioned between the actuator compartment and an interior of a vacuum chamber. The filter assembly includes a first particle filter, a second particle filter, and a purifier medium between the first particle filter and the second particle filter. Vacuum conditions in the actuator compartment can be achieved with a pump for the vacuum chamber, but particles and contaminants from the actuator or actuator compartment are captured by the filter assembly.

Abstract: An actuator for an optic mount in a vacuum environment includes a bellows around an actuator compartment. The bellows provides a seal around the actuator. A filter assembly is positioned between the actuator compartment and an interior of a vacuum chamber. The filter assembly includes a first particle filter, a second particle filter, and a purifier medium between the first particle filter and the second particle filter. Vacuum conditions in the actuator compartment can be achieved with a pump for the vacuum chamber, but particles and contaminants from the actuator or actuator compartment are captured by the filter assembly.

Abstract: The system includes a photocathode electron source, diffractive optical element, and a microlens array to focus the beamlets. A source directs a radiation beam to the diffractive optical element, which produces a beamlet array to be used in combination with a photocathode surface to generate an array of electron beams from the beamlets.

Abstract: The system includes a photocathode electron source, diffractive optical element, and a microlens array to focus the beamlets. A source directs a radiation beam to the diffractive optical element, which produces a beamlet array to be used in combination with a photocathode surface to generate an array of electron beams from the beamlets.

Abstract: An emitter with a protective cap layer on an exterior surface of the emitter is disclosed. The emitter can have a diameter of 100 nm or less. The protective cap layer includes ruthenium. Ruthenium is resistant to oxidation and carbon growth. The protective cap layer also can have relatively low sputter yields to withstand erosion by ions. The emitter may be part of a system with an electron beam source. An electric field can be applied to the emitter and an electron beam can be generated from the emitter. The protective cap layer may be applied to the emitter by sputter deposition, atomic layer deposition (ALD), or ion sputtering.

Abstract: An emitter with a protective cap layer on an exterior surface of the emitter is disclosed. The emitter can have a diameter of 100 nm or less. The protective cap layer includes ruthenium. Ruthenium is resistant to oxidation and carbon growth. The protective cap layer also can have relatively low sputter yields to withstand erosion by ions. The emitter may be part of a system with an electron beam source. An electric field can be applied to the emitter and an electron beam can be generated from the emitter. The protective cap layer may be applied to the emitter by sputter deposition, atomic layer deposition (ALD), or ion sputtering.

Abstract: An emitter containing a metal boride material has an at least partly rounded tip with a radius of 1 ?m or less. An electric field can be applied to the emitter and an electron beam is generated from the emitter. To form the emitter, material is removed from a single crystal rod to form an emitter containing a metal boride material having a rounded tip with a radius of 1 ?m or less.

Abstract: A computer-implemented method for determining an optimized purge gas flow in a semi-conductor inspection metrology or lithography apparatus, comprising receiving a permissible contaminant mole fraction, a contaminant outgassing flow rate associated with a contaminant, a contaminant mass diffusivity, an outgassing surface length, a pressure, a temperature, a channel height, and a molecular weight of a purge gas, calculating a flow factor based on the permissible contaminant mole fraction, the contaminant outgassing flow rate, the channel height, and the outgassing surface length, comparing the flow factor to a predefined maximum flow factor value, calculating a minimum purge gas velocity and a purge gas mass flow rate from the flow factor, the contaminant mass diffusivity, the pressure, the temperature, and the molecular weight of the purge gas, and introducing the purge gas into the semi-conductor inspection metrology or lithography apparatus with the minimum purge gas velocity and the purge gas flow rate.

Abstract: An emitter containing a metal boride material has an at least partly rounded tip with a radius of 1 ?m or less. An electric field can be applied to the emitter and an electron beam is generated from the emitter. To form the emitter, material is removed from a single crystal rod to form an emitter containing a metal boride material having a rounded tip with a radius of 1 ?m or less.

Abstract: A spare tire assembly for pre-installation in tires to protect tires when flattened includes an insert that is resilient. The insert is toroidally shaped and defines a central opening. The central opening is complementary to a rim of a wheel, such that the insert is positionable between the rim and a tire that is to be coupled to the rim. A cover is positioned over an outer surface of the insert. The cover is configured to shield the insert from potential damage as the wheel rotates with the tire in a deflated condition. A user is able to operate a vehicle having a flattened tire that is configured with the insert for a period of time without damaging the flattened tire.

Abstract: An apparatus for use with extreme ultraviolet (EUV) light comprising A) a duct having a first end opening, a second end opening and an intermediate opening intermediate the first end opening the second end opening, B) an optical component disposed to receive EUV light from the second end opening or to send light through the second end opening, and C) a source of low pressure gas at a first pressure to flow through the duct, the gas having a high transmission of EUV light, fluidly coupled to the intermediate opening. In addition to or rather than gas flow the apparatus may have A) a low pressure gas with a heat control unit thermally coupled to at least one of the duct and the optical component and/or B) a voltage device to generate voltage between a first portion and a second portion of the duet with a grounded insulative portion therebetween.

Abstract: A method and an apparatus to protect a reticle against particles and chemicals in an actinic EUV reticle inspection tool are presented. The method and apparatus utilizes a pair of porous metal diffusers in the form of showerheads to provide a continual flow of clean gas. The main showerhead bathes the reticle surface to be inspected in smoothly flowing, low pressure gas, isolating it from particles coming from surrounding volumes. The secondary showerhead faces away from the reticle and toward the EUV illumination and projection optics, supplying them with purge gas while at the same time creating a buffer zone that is kept free of any particle contamination originating from those optics.

Abstract: A computer-implemented method for determining an optimized purge gas flow in a semi-conductor inspection metrology or lithography apparatus, comprising receiving a permissible contaminant mole fraction, a contaminant outgassing flow rate associated with a contaminant, a contaminant mass diffusivity, an outgassing surface length, a pressure, a temperature, a channel height, and a molecular weight of a purge gas, calculating a flow factor based on the permissible contaminant mole fraction, the contaminant outgassing flow rate, the channel height, and the outgassing surface length, comparing the flow factor to a predefined maximum flow factor value, calculating a minimum purge gas velocity and a purge gas mass flow rate from the flow factor, the contaminant mass diffusivity, the pressure, the temperature, and the molecular weight of the purge gas, and introducing the purge gas into the semi-conductor inspection metrology or lithography apparatus with the minimum purge gas velocity and the purge gas flow rate.

Abstract: Methods and systems for measuring a characteristic of a substrate or preparing a substrate for analysis are provided. One method for measuring a characteristic of a substrate includes removing a portion of a feature on the substrate using an electron beam to expose a cross-sectional profile of a remaining portion of the feature. The feature may be a photoresist feature. The method also includes measuring a characteristic of the cross-sectional profile. A method for preparing a substrate for analysis includes removing a portion of a material on the substrate proximate to a defect using chemical etching in combination with an electron beam. The defect may be a subsurface defect or a partially subsurface defect. Another method for preparing a substrate for analysis includes removing a portion of a material on a substrate proximate to a defect using chemical etching in combination with an electron beam and a light beam.

Abstract: An apparatus for use with extreme ultraviolet (EUV) light comprising A) a duct having a first end opening, a second end opening and an intermediate opening intermediate the first end opening the second end opening, B) an optical component disposed to receive EUV light from the second end opening or to send light through the second end opening, and C) a source of low pressure gas at a first pressure to flow through the duct, the gas having a high transmission of EUV light, fluidly coupled to the intermediate opening. In addition to or rather than gas flow the apparatus may have A) a low pressure gas with a heat control unit thermally coupled. to at least one of the duct and the optical component and/or B) a voltage device to generate voltage between a first portion and a second portion of the duet with a grounded insulative portion therebetween.

Abstract: Methods and systems for measuring a characteristic of a substrate or preparing a substrate for analysis are provided. One method for measuring a characteristic of a substrate includes removing a portion of a feature on the substrate using an electron beam to expose a cross-sectional profile of a remaining portion of the feature. The feature may be a photoresist feature. The method also includes measuring a characteristic of the cross-sectional profile. A method for preparing a substrate for analysis includes removing a portion of a material on the substrate proximate to a defect using chemical etching in combination with an electron beam. The defect may be a subsurface defect or a partially subsurface defect. Another method for preparing a substrate for analysis includes removing a portion of a material on a substrate proximate to a defect using chemical etching in combination with an electron beam and a light beam.

Abstract: An assembly, including: a nozzle including a first chamber with a first orifice arranged to receive a stream of gas; a second chamber with a second orifice to emit the stream; a throat connecting the nozzle chambers; and a collector including: top and bottom walls with first and second openings; a third chamber bounded by the top and bottom walls and including a third opening connected to the second orifice to receive the stream; and a fourth opening. The first chamber tapers from the first orifice to the throat. The second chamber expands in size from the throat to the second orifice. The third chamber expands in size from the third opening to the fourth opening. The collector is arranged to: entrain, in the stream, debris entering the third chamber through first or second opening; and emit the stream, with the entrained debris, from the fourth opening.

Abstract: A method and an apparatus to protect a reticle against particles and chemicals in an actinic EUV reticle inspection tool are presented. The method and apparatus utilizes a pair of porous metal diffusers in the form of showerheads to provide a continual flow of clean gas. The main showerhead bathes the reticle surface to be inspected in smoothly flowing, low pressure gas, isolating it from particles coming from surrounding volumes. The secondary showerhead faces away from the reticle and toward the EUV illumination and projection optics, supplying them with purge gas while at the same time creating a buffer zone that is kept free of any particle contamination originating from those optics.

Abstract: A defect may be characterized using primary radiation directed from a primary electron source to a measurement location on the sample. An electron energy analyzer may capture secondary electrons emitted from the measurement location in a focusing direction by an electron energy analyzer. A transverse focusing device may focus electrons emitted from the measurement location in a transverse direction that is perpendicular to the focusing direction.

Abstract: Etch selectivity enhancement during electron beam activated chemical etch (EBACE) is disclosed. A target or portion thereof may be exposed to a gas composition of a type that etches the target when the gas composition and/or target are exposed to an electron beam. By directing an electron beam toward the target in the vicinity of the gas composition, an interaction between the electron beam and the gas composition etches a portion of the target exposed to both the gas composition and the electron beam. Selectivity of etching of the target due to interaction between the electron beam and gas composition may be enhanced in a number of ways.