Methods and Systems for Measuring a Characteristic of a Substrate or Preparing a Substrate for Analysis
Methods and systems for measuring a characteristic of a substrate or preparing a substrate for analysis are provided. One method for measuring a characteristic of a substrate includes removing a portion of a feature on the substrate using an electron beam to expose a cross-sectional profile of a remaining portion of the feature. The feature may be a photoresist feature. The method also includes measuring a characteristic of the cross-sectional profile. A method for preparing a substrate for analysis includes removing a portion of a material on the substrate proximate to a defect using chemical etching in combination with an electron beam. The defect may be a subsurface defect or a partially subsurface defect. Another method for preparing a substrate for analysis includes removing a portion of a material on a substrate proximate to a defect using chemical etching in combination with an electron beam and a light beam.
1. Field of the Invention
The present invention generally relates to methods and systems for measuring a characteristic of a substrate or preparing a substrate for analysis. Certain embodiments relate to methods and systems for measuring a characteristic of a substrate or preparing a substrate for analysis that include removing a portion of a material on a substrate.
2. Description of the Related Art
The following descriptions and examples are not admitted to be prior art by virtue of their inclusion within this section.
Fabricating semiconductor devices such as logic and memory devices typically includes processing a substrate such as a semiconductor wafer using a number of semiconductor fabrication processes to form various features and multiple levels of the semiconductor devices. For example, lithography is a semiconductor fabrication process that involves transferring a pattern from a reticle to a resist arranged on a semiconductor wafer. Additional examples of semiconductor fabrication processes include, but are not limited to, chemical-mechanical polishing, etch, deposition, and ion implantation. Multiple semiconductor devices may be fabricated in an arrangement on a semiconductor wafer and then separated into individual semiconductor devices.
Throughout the fabrication process, parameters of features formed on the wafer are measured for process monitoring and control purposes. For example, three dimensional metrology of the profile of features on a monitor wafer is often performed at various times during the process. In particular, the three-dimensional profile of photoresist features is often measured after a lithography step to determine if the features have parameters that are within the specifications (specs) set for them. If the parameters of the features are within spec, then the lithography step may be performed on product wafers. On the other hand, if the parameters of the features are not within spec, then one or more parameters of the lithography step may be altered. Another monitor wafer may then be exposed in the lithography process, and the measurements described above may be performed until the parameters of the features are within spec.
The term “monitor wafer” is generally defined as a wafer upon which a semiconductor product will not be formed. Instead, monitor wafers are only used to monitor the parameters of one process tool and, therefore, are generally only processed in that one tool. After use, monitor wafers may be recycled or scrapped depending on the process that they were run through. Monitor wafers are particularly used as process monitors when a metrology or inspection process will damage the wafer. In this manner, monitor wafers, instead of product wafers, will be destroyed thereby reducing the costs of metrology or inspection. However, using monitor wafers to monitor and control processes can be relatively expensive if the monitor wafers are so damaged by metrology or inspection that they cannot be reused. In addition, since there may be significant differences between monitor wafers and product wafers (e.g., usually fewer processes are performed on the monitor wafers than the product wafers which can produce significant differences in the wafers), using monitor wafers may not provide results that are as accurate as measurements performed on a product wafer.
As a result, there are advantages to performing metrology and inspection on product wafers. However, as mentioned above, many metrology and inspection processes damage wafers. For example, wafers on which photoresist features are formed are often cleaved (i.e., fractured) through the photoresist features such that cross-sectional profiles of the features on the cleaved samples can be viewed. Since the wafers are fractured, this destructive metrology technique results in scrapped wafers. Another metrology technique involves photoresist feature cross-sectioning uses ion beams. For 193 nm photoresist features and smaller lines, the photoresist features are exposed to a tungsten or platinum deposition to reduce ion beam induced damage. The deposited metal top layer generates stresses on 193 nm photoresist lines thereby resulting in photoresist compression and deformation. This damage is due, at least in part, to the incomplete conformal coating of the substrate during the deposition process, which produces voids between adjacent photoresist features. The resulting cross-section thus loses structural integrity, and sometimes to such a degree that the results are not a viable indicator of the characteristics (e.g., critical dimension) of the features. In addition, in such metrology techniques, the use of gallium or other metallic liquid ion sources produces metal contamination in the front end of the line (FEOL) portion of semiconductor device fabrication. There are, therefore, several disadvantages to the currently used three-dimensional metrology techniques including destroyed and therefore scrapped wafers, metal contamination, and/or deformed photoresist features.
As the dimensions of advanced semiconductor devices continue to shrink, the presence of defects in the semiconductor devices increasingly limits the successful fabrication, or yield, of the semiconductor devices. For example, a scratch formed on a wafer during chemical-mechanical polishing may cause an open circuit or a short circuit in, or complete failure of, one or more semiconductor devices formed in subsequent processing. Because fabrication of a semiconductor device includes many complex process steps, the adverse effects of defects on total yield may increase exponentially if a defect formed on a wafer in one manufacturing process step causes additional defects to be formed on the wafer in subsequent manufacturing process steps.
Accordingly, defect detection or “inspection” of semiconductor wafers is and will continue to be of significant importance in semiconductor development and manufacturing. In addition, the review and analysis of defects is of significant importance such that the cause of defects may be determined and hopefully corrected. The ability to remove device film layers (“de-layer”) at select locations in a controllable fashion is critical for defect review and analysis during the device fabrication process. For example, removing a device film layer may allow a better view of a defect, particularly a subsurface or partially subsurface defect. In addition, removing a device film layer may enable analysis of the defect composition to be performed with less interference from the surrounding film layer.
Current techniques for de-layering of a substrate utilize ion beam etching, laser ablative etching, or mechanical abrasion using a micro-tip. Focused ion beam etching utilizes gallium ions to stimulate etching. Laser ablative techniques utilize lasers to heat the surface of the substrate to cause chemical and thermal reactions that remove the films. The mechanical abrasion technique uses micro-tips to remove the films around the defect.
Of the current techniques, ion beam etching is the most mature technique used to de-layer devices. However, when using an ion beam to stimulate etching, gallium ions from a source are implanted into the films, which can lead to changes in the optical, electrical, and mechanical properties of the etched features and the surrounding areas. The presence of gallium ions on the device can limit further processing of the device and the wafer in the fab, which would result in scrapping the entire wafer. In addition, during focused ion beam etching, the etched material may be deposited in the surrounding areas on the wafer. The other techniques used for de-layering of a substrate also have several disadvantages. For example, the laser ablative technique has low etch selectivity. In addition, the mechanical abrasion method has limited applications to certain large defects and films.
Accordingly, it would be advantageous to develop methods and systems for three-dimensional metrology of features on a substrate and for de-layering a material on a substrate, which do not destroy, contaminate, or deform the substrate or the features.
SUMMARY OF THE INVENTIONThe following description of various embodiments of methods and systems for measuring a characteristic of a substrate or preparing a substrate for analysis is not to be construed in any way as limiting the subject matter of the appended claims.
An embodiment of the invention relates to a method for measuring a characteristic of a substrate. In one embodiment, the substrate may include a product wafer. The method includes removing a portion of a feature on the substrate using an electron beam to expose a cross-sectional profile of a remaining portion of the feature. Removing the portion of the feature does not substantially deform the remaining portion of the feature. In addition, the portion of the feature that is removed is substantially confined to an area of the feature illuminated by the electron beam. In one embodiment, the feature may include a photoresist feature.
The method also includes measuring a characteristic of the cross-sectional profile of the remaining portion of the feature. The characteristic of the cross-sectional profile includes a three-dimensional characteristic of the feature. In one embodiment, measuring the characteristic may be performed using the electron beam. In such an embodiment, the method may also include tilting the substrate relative to the electron beam between removing the portion of the feature and measuring the characteristic. In a different embodiment, measuring the characteristic may be performed using a different electron beam. The different electron beam may be arranged at a predetermined tilt position with respect to the substrate. Each of the embodiments of the method described above may include any other step(s) described herein.
Another embodiment relates to a system configured to measure a characteristic of a substrate. In one embodiment, the substrate includes a product wafer. The system includes an electron delivery subsystem configured to deliver one or more electron beams to the substrate. The one or more electron beams can remove a portion of a feature on the substrate to expose a cross-sectional profile of a remaining portion of the feature. In one embodiment, the feature includes a photoresist feature. Removal of the portion of the feature does not substantially deform the remaining portion of the feature. The portion of the feature that is removed is substantially confined to an area of the feature illuminated by the one or more electron beams.
The one or more electron beams can also measure a characteristic of the cross-sectional profile of the remaining portion of the feature. The characteristic of the cross-sectional profile includes a three-dimensional characteristic of the feature. In one embodiment, the system may be configured to tilt the substrate relative to the one or more electron beams between removal of the portion of the feature and measurement of the characteristic. In another embodiment, removal of the portion of the feature is performed using a first of the one or more electron beams. Measurement of the characteristic is performed using a second of the one or more electron beams. The second electron beam may be arranged at a predetermined tilt position with respect to the substrate. Each of the embodiments of the system described above may be further configured as described herein.
An additional embodiment relates to a method for preparing a substrate for analysis. The substrate may include a product wafer. The method includes removing a portion of a material on the substrate proximate to a defect using chemical etching in combination with an electron beam. The defect may include a subsurface defect or a partially subsurface defect. The portion of the material that is removed may have an area that is equal to or less than about 10 μm by about 10 μm. Chemical etching may include exposing the substrate to an etch chemistry. The etch chemistry may include a fluorine-based chemistry, a chlorine-based chemistry, a bromine-based chemistry, or an oxygen-based chemistry. In some embodiments, the method may also include removing a portion of an additional material on the substrate proximate to the defect using the chemical etching in combination with the electron beam. The additional material is different than the material and is formed under the material.
In one embodiment, the method may include analyzing the defect to determine a characteristic of the defect. For example, the method may include analyzing the defect using the electron beam to determine a characteristic of the defect. In another embodiment, the method may include analyzing the defect using an x-ray analysis system to determine a characteristic of the defect. The characteristic of the defect may include a composition of the defect. Each of the embodiments of the method described above may include any other step(s) described herein.
A further embodiment relates to a system configured to prepare a substrate for analysis. In one embodiment, the substrate includes a product wafer. The system includes a chemical delivery subsystem configured to deliver one or more chemicals to a substrate. The system also includes an electron delivery subsystem configured to deliver an electron beam to the substrate. The one or more chemicals in combination with the electron beam remove a portion of a material on the substrate proximate to a defect. The defect may include a subsurface defect or a partially subsurface defect. The portion of the material that is removed may have an area that is equal to or less than about 10 μm by about 10 μm.
In one embodiment, the one or more chemicals may include a fluorine-based chemistry, a chlorine-based chemistry, a bromine-based chemistry, or an oxygen-based chemistry. The one or more chemicals in combination with the electron beam may also remove a portion of an additional material on the substrate proximate to the defect. The additional material is different than the material and is formed under the material.
In some embodiments, the system may also include an analysis subsystem configured to measure a characteristic of the defect. In one embodiment, the electron delivery subsystem may be configured to measure a characteristic of the defect using the electron beam. In this manner, the electron delivery subsystem may also function as an analysis subsystem. In another embodiment, the analysis subsystem may include an x-ray analysis system. In some embodiments, the characteristic of the defect may include a composition. Each of the embodiments of the system described above may be further configured as described herein.
Yet another embodiment relates to a different method for preparing a substrate for analysis. This method includes removing a portion of a material on the substrate proximate to a defect using chemical etching in combination with an electron beam and a light beam. The electron beam is delivered to the substrate coaxially with the light beam. Chemical etching includes exposing the substrate to an etch chemistry. In one embodiment, the etch chemistry may include a fluorine-based chemistry, a chlorine-based chemistry, a bromine-based chemistry, or an oxygen-based chemistry. Removing the portion of the material includes heating the material with the light beam. In addition, removing the portion of the material includes heating a horizontal surface of the material and not substantially heating a vertical surface of the material. The portion of the material that is removed may have an area that is equal to or less than about 10 μm by about 10 μm.
In one embodiment, the method includes generating the light beam with a laser. In some embodiments, the method may also include removing a portion of an additional material on the substrate proximate to the defect using the chemical etching in combination with the electron beam and the light beam. The additional material is different than the material and is formed under the material. Removing the portion of the material and removing the portion of the additional material include differentially heating the material and the additional material with the light beam.
The defect may include a subsurface defect or a partially subsurface defect. In some embodiments, the material may include a device film. In such an embodiment, removing the portion of the material does not substantially alter an aspect ratio of device features on the substrate. In some embodiments, the method may also include analyzing the defect to determine a characteristic of the defect. In one embodiment, the method may include analyzing the defect using the electron beam to determine a characteristic of the defect. In a different embodiment, the method may include analyzing the defect using an x-ray analysis system to determine a characteristic of the defect. In one embodiment, the characteristic of the defect may include a composition. Each of the embodiments of the method described above may include any other step(s) described herein.
An additional embodiment relates to a different system that is configured to prepare a substrate for analysis. This system includes a chemical delivery subsystem that is configured to deliver one or more chemicals to a substrate. The one or more chemicals may include a fluorine-based chemistry, a chlorine-based chemistry, a bromine-based chemistry, or an oxygen-based chemistry. The system also includes an electron and light delivery subsystem configured to deliver an electron beam to the substrate coaxially with a light beam. The one or more chemicals in combination with the electron beam and the light beam remove a portion of a material on the substrate proximate to a defect.
The defect may include a subsurface defect or a partially subsurface defect. In an embodiment, the material may include a device film. In such an embodiment, the one or more chemicals in combination with the electron beam and the light beam do not substantially alter an aspect ratio of device features on the substrate. The portion of the material that is removed may have an area that is equal to or less than about 10 μm by about 10 μm.
In one embodiment, the electron and light delivery subsystem may include a laser that is configured to generate the light beam. The electron and light delivery subsystem also includes an electron column. The electron column may include an optical window configured to allow the light beam to enter the electron column. In addition, the electron and light delivery subsystem may include a mirror with an aperture formed through the mirror. The electron beam passes through the aperture, and the light beam is reflected from the mirror such that the light beam is coaxial with the electron beam.
The electron and light delivery subsystem is also configured such that the light beam heats the material. In addition, the electron and light delivery subsystem may be configured such that the light beam heats a horizontal surface of the material and does not substantially heat a vertical surface of the material. In some embodiments, the one or more chemicals in combination with the electron beam and the light beam may also remove a portion of an additional material on the substrate proximate to the defect. The additional material is different than the material and is formed under the material. In one such embodiment, the electron and light delivery subsystem may be configured such that the light beam differentially heats the material and the additional material.
In some embodiments, the system may also include an analysis subsystem that is configured to measure a characteristic of the defect. In one embodiment, the electron and light delivery subsystem may be configured to measure a characteristic of the defect using the electron beam. Therefore, the electron and light delivery subsystem may function as an analysis subsystem. In another embodiment, the analysis subsystem may include an x-ray analysis system. The characteristic of the defect may be a composition of the defect. Each of the embodiments of the system described above may be further configured as described herein.
Further advantages of the present invention may become apparent to those skilled in the art with the benefit of the following detailed description of the preferred embodiments and upon reference to the accompanying drawings in which:
While the invention is susceptible to various modifications and alternative forms, specific embodiments thereof are shown by way of example in the drawings and may herein be described in detail. The drawings may not be to scale. It should be understood, however, that the drawings and detailed description thereto are not intended to limit the invention to the particular form disclosed, but on the contrary, the intention is to cover all modifications, equivalents and alternatives falling within the spirit and scope of the present invention as defined by the appended claims.
DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTSAs used herein, the term “substrate” is generally defined as a wafer or a reticle. As used herein, the term “wafer” generally refers to a substrate formed of a semiconductor or non-semiconductor material. Examples of such a semiconductor or non-semiconductor material include, but are not limited to, monocrystalline gallium arsenide, and indium phosphide. Such substrates may be commonly found and/or processed in semiconductor fabrication facilities.
A wafer may include only the substrate. Such a wafer is commonly referred to as a “virgin wafer.” Alternatively, a wafer may include one or more layers formed upon a substrate. For example, such layers may include, but are not limited to, a resist, a dielectric material, and a conductive material. A resist or a “photoresist” may include any material that may be patterned by an optical lithography technique, an e-beam lithography technique, or an X-ray lithography technique. Examples of a dielectric material include, but are not limited to, silicon dioxide, silicon nitride, silicon oxynitride, and titanium nitride. Additional examples of a dielectric material include “low-k” dielectric materials such as Black Diamond™ which is commercially available from Applied Materials, Inc., Santa Clara, Calif., and CORAL™ commercially available from Novellus Systems, Inc., San Jose, Calif., “ultra-low k” dielectric materials such as “xerogels,” and “high-k” dielectric materials such as tantalum pentoxide. In addition, examples of a conductive material include, but are not limited to, aluminum, polysilicon, and copper.
One or more layers formed on a wafer may be patterned or unpatterned. For example, a wafer may include a plurality of dies having repeatable pattern features. Formation and processing of such layers of material may ultimately result in completed semiconductor devices. As such, a wafer may include a substrate on which not all layers of a complete semiconductor device have been formed or a substrate on which all layers of a complete semiconductor device have been formed. The term “semiconductor device” is used interchangeably herein with the term “integrated circuit.” In addition, other devices such as microelectromechanical (MEMS) devices and the like may also be formed on a wafer.
A “reticle” or a “mask” is generally defined as a substantially transparent substrate having substantially opaque regions formed thereon and configured in a pattern. The substrate may include, for example, a glass material such as quartz. The substantially opaque regions may be formed of a material such as chromium. A reticle may be disposed above a resist-covered wafer during an exposure step of a lithography process such that the pattern on the reticle may be transferred to the resist. For example, substantially opaque regions of the reticle may protect underlying regions of the resist from exposure to an energy source. Many different types of reticles are known in the art, and the term reticle as used herein is intended to encompass all types of reticles.
As used herein, the term “feature” generally refers to any structure formed on a substrate that has sonic lateral extent in three-dimensions (i.e., a width as well as a height). Examples of features include patterned structures formed on semiconductor wafers. Patterned structures may be formed on semiconductor wafers using any process known in the art (e.g., lithography and etch). The features may be formed of any material known in the art such as a resist, a conductive material, and an insulating material.
Turning now to the drawings, it is noted that
Turning now to the drawings,
As further shown in
As further shown in
The quality of the material removal (e.g., horizontal linearity, sidewall orthogonality, material removal rate, etc.) is generally a function of electron beam focus quality, landing energy, etch gas availability, and beam dwell time. Therefore, these parameters of the electron beam can be altered to optimize the material removal and the quality of the remaining portions of the feature. These parameters may also vary depending on, for example, characteristics of the feature (e.g., size and composition) and characteristics of the substrate (e.g., composition, underlying layers, etc.). In this manner, the methods and systems described herein can be used to produce an exposed cross-sectional profile of a feature that is particularly suitable for measurement since the remaining portions of the feature retain the original characteristics of the feature. Therefore, the methods and systems described herein for measuring a characteristic of a substrate are advantageous over other currently used methods and systems since the methods and systems described herein do not cause deformation of the features on the substrate.
The method also includes measuring a characteristic of at least one of the cross-sectional profiles 16 of remaining portions 10b and 10c of feature 10. For example, measuring a characteristic of cross-sectional profiles 16 may be performed using electron beam 14. In such an example, the electron beam may be used to image one of the cross-sectional profiles using a scanning electron microscopy technique. The characteristic that is measured may include a three-dimensional characteristic of the feature (e.g., a critical dimension of the feature, a height of the feature, a sidewall angle or slope of the feature, a three-dimensional profile of the feature, or any other characteristic of the cross-sectional profile that may be measured using a scanning electron microscopy technique). For example, as shown in
If the same electron beam is used to remove the portion of the feature and to measure a characteristic of the cross-sectional profile, the parameters of the subsystem used to deliver the electron beam may be changed between removal and measurement to change one or more characteristics of the electron beam (e.g., energy, focus, etc.). The parameters of the electron beam may vary depending upon, for example, the size of the feature, the composition of the feature, the composition of the substrate, or the composition of the layer of the substrate upon which the feature is formed. Selection of appropriate parameters for removal and measurement will be obvious to one of ordinary skill the art. In particular, the characteristics of the electron beam (and therefore, the parameters of the electron delivery subsystem) may be selected such that the rate at which the portion of the feature is removed enhances the perpendicularity of the exposed cross-sectional profiles. In other words, the characteristics of the electron beam may be selected to avoid under-etch or over-etch of the remaining portions of the feature.
When measuring a characteristic of the cross-sectional profile of the remaining portion of the feature with the same electron beam that is used for removal, the substrate may be tilted relative to the electron beam after the portion of the feature is removed and before the characteristic is measured. In this manner, the electron beam may be arranged at an appropriate viewing angle with respect to the remaining portion of the feature. The substrate may be tilted by altering the position of a stage (not shown) upon which the substrate is disposed between removal of the portion of the feature and measurement. Alternatively, or in addition, the electron beam may be tilted relative to the substrate after the portion of the feature is removed and before measurement such that the electron beam is at an appropriate viewing angle during measurements. The electron beam may be tilted by altering one or more parameters of an electron delivery subsystem that is configured to deliver the electron beam to the substrate.
In a different embodiment, removing the portion of the feature may be performed using one electron beam, and measuring a characteristic of a cross-sectional profile of the feature may be performed using a different electron beam. In such an embodiment, the different electron beam may be arranged at a predetermined tilt position with respect to the substrate. In this manner, after a substrate is placed on a stage coupled to the different electron beam, the position of the stage may not have to be altered before a measurement can be performed.
In one such embodiment, one electron beam may remove a portion of one feature on the substrate while the other electron beam is measuring a characteristic of a cross-sectional profile of a different feature on the substrate. The cross-sectional profile being measured may have been previously exposed using the first electron beam. Therefore, different electron beams may perform different functions (e.g., removal and measurement) on a substrate at the same time. In other words, a substrate may be exposed to two or more electron beams while being disposed on the same stage.
In another example, one electron beam may be used to perform removal and measurement on one feature while another electron beam is performing removal and measurement on another feature. In a different example, one of the electron beams may remove a portion of a feature on one substrate while another electron beam measures a feature on another substrate. Each of the embodiments of the method described above may include any other step(s) described herein.
Additional embodiments relate to a system configured to measure a characteristic of a substrate according to the method described above.
The electron beam delivered to the substrate by electron delivery subsystem 32 can be used to remove a portion of a feature on the substrate thereby exposing a cross-sectional profile of a remaining portion of the feature as described above. The feature may include a photoresist feature or any of the other features described above. The substrate may be a product wafer or any other substrate described above. As described above, removal of the portion of the feature by the electron beam does not substantially deform the remaining portion of the feature, as shown in
The electron beam delivered to the substrate by electron delivery subsystem 32 can also be used to measure a characteristic of a cross-sectional profile of the remaining portion of the feature. The characteristic may include any three-dimensional characteristic of the feature described above. In one embodiment of the system shown in
In another embodiment, the system shown in
Each of the electron delivery subsystems may be generally configured as an electron column. The electron delivery subsystems may include any appropriate electron columns known in the art. In addition, the electron columns of the two electron delivery subsystems may be configured similarly or differently. The electron delivery subsystems may also include additional components (not shown) coupled to the electron columns. The additional components may include, for example, components configured to control the electron beams. The system may also include other components such as one or more processors (not shown) coupled to one or more of the electron columns and one or more of the stages. The processor may be configured to control the electron column and the stage as further described herein.
The electron beam delivered to the substrate by electron delivery subsystem 36 can be used for removal as described above. The electron beam delivered to the subsystem by electron delivery subsystem 38 can be used for measurements as described above. In one embodiment of the system shown in
In the system shown in
In the embodiment described above, therefore, one electron delivery subsystem may be dedicated to material removal, and the other electron delivery subsystem may be dedicated to measurement. However, it is to be understood that both electron delivery subsystems may also be configured to perform both material removal and measurement, as described above with respect to electron delivery subsystem 32. In either embodiment, the system shown in
As described above, the two electron delivery subsystems may be coupled by a common substrate handler or may be arranged within one housing. The two electron delivery subsystems may, however, be coupled in a different manner. For example, in one embodiment shown in
In another embodiment shown in
However, regardless of their locations, electron delivery subsystem 36 and electron delivery subsystem 38 may be coupled by transmission medium 52. In one particular embodiment, a processor of electron delivery subsystem 36 may be coupled by transmission medium 52 to a processor of electron delivery subsystem 38. In this manner, measurements and other information may be sent between processors of the subsystems. For example, electron delivery subsystem 36 may send a location of a feature that has been etched as described above to electron delivery subsystem 38. Electron delivery subsystem 38 may then use the information to locate the feature to be measured and then carry out the measurements. The system shown in
Although the embodiments of the system shown in
Additional methods and systems are described herein that may be used for removing device film layers (de-layering) at selective locations in a controllable fashion. Such de-layering is critical for defect review and analysis during the device fabrication process. As described further above, current techniques for de-layering include ion beam etching, laser ablative etching, and mechanical abrasion using micro-tip. These techniques have disadvantages such as causing changes in the optical, electrical, and mechanical properties of the etched features and surrounding areas and contamination of the substrate, which effectively destroys the substrate.
Electron beam assisted chemical etching as described further herein has many advantages over these techniques. For example, using an electron beam instead of an ion beam for etching eliminates the ion contamination and the collateral damage that the ion beam causes to surrounding areas. Therefore, the methods and systems described herein are compatible with front end of the line (FEOL) processing and back end of the line (BEOL) processing, and wafers that have been de-layered as described herein can be returned to the process line. In addition, another advantage of electron beam assisted chemical etching is the high degree of etch selectivity and endpoint detection. Selective electron beam assisted chemical etching with fluorine, chlorine, bromine, and oxygen based chemistries has been developed for most of the film layers in DRAM memory devices, logic devices, and photoresist. Furthermore, since the methods and systems described herein have a relatively high throughput, the time in which the root cause of defects can be correctly identified using these methods and systems may be significantly lower than currently used methods and systems.
As shown in
As shown in
As shown in
The area of the portion of the material that is removed may vary depending on, for example, the area on the substrate that is illuminated by the electron beam. For example, in the methods and systems described herein, etching takes place only in the presence of etchant gases in combination with the electron beam. In this manner, the diameter of the electron beam, and thereby the area of the removed material, may be altered depending on, for example, the lateral dimensions of the defect, the area that is selected for removal, the analysis that is to be carried out on the detect, the characteristics of the material being removed, and/or the characteristics of the substrate. In one particular example, the area of the material that is removed is preferably kept at a minimum (to avoid damaging or destroying neighboring structures if present) while allowing enough material removal around the defect for analysis to be successfully completed.
The method may also include analyzing defect 54 to determine a characteristic of the defect. The characteristic of the defect that is determined may include any characteristic that may be of interest such as dimensions (height and width), profile, composition, roughness, etc. Therefore, the characteristic of the defect that is to be determined may determine what analysis is performed on the defect. In one embodiment, analyzing the defect may be performed using an electron beam. In one particular embodiment, as shown in
In another embodiment, the electron beam may be used to determine a composition of the defect using a technique such as energy dispersive x-ray spectroscopy (EDX or EDS) or Auger electron spectroscopy (AES). Once the defect composition has been determined, the de-layering methods described herein may be altered to maximize the selectivity between the defect and the surrounding films. Generally, in the EDX technique, a beam of electrons is directed to a surface of the defect. The defect may emit secondary electrons and a characteristic x-ray in response to the directed beam of electrons. The characteristic x-ray may be detected by a semiconductor x-ray detector and may be subjected to energy analysis. The x-ray spectrum may be analyzed to determine a composition of the defect. Examples of EDX systems and methods are illustrated in U.S. Pat. No. 4,559,450 to Robinson et al., U.S. Pat. No. 6,072,178 to Mizuno, and U.S. Pat. No. 6,084,679 to Steffan et al., and are incorporated by reference as if fully set forth herein.
In another embodiment, an x-ray analysis system (not shown) may be used to determine a characteristic of the defect. For example, a composition of a defect can be determined using a technique such as x-ray photoelectron spectroscopy (XPS or ESCA) or x-ray fluorescence spectrometry (XRF). In another example, an x-ray reflectance (XRR) technique may be used to measure a characteristic of a defect such as a concentration of an element in a defect. Examples of x-ray reflectance methods and systems are illustrated in U.S. Pat. No. 5,740,226 to Komiya et al., U.S. Pat. No. 6,040,198 to Komiya et al., and U.S. Pat. No. 6,633,831 to Nikoonahad et al., which are incorporated by reference as if fully set forth herein. The x-ray analysis system may be configured as described in these patents.
In other embodiments, analysis of the defect may be performed using any other analytical technique known in the art. For example, the defect may be analyzed using secondary ion mass spectroscopy (SIMS). SIMS generally involves removing material from a sample by sputtering ions from the surface of the sample and analyzing the sputtered ions by mass spectrometry. Examples of SIMS techniques are illustrated in U.S. Pat. No. 4,645,929 Criegern et al., U.S. Pat. No. 4,912,326 to Naito, U.S. Pat. No. 6,078,0445 to Maul et al., and U.S. Pat. No. 6,107,629 to Benninghoven et al., and are incorporated by reference as if fully set forth herein. The analysis system may be configured as described in these patents.
As shown in
As shown in
As shown in
Since materials 74 and 76 are different types of materials, parameters of the chemical etching and the electron beam may be different for removal of the portion of material 74 and for removal of the portion of material 76. For instance, different etch chemistries may be used to remove material 74 and 76. In one example, a fluorine-based etch chemistry may be used to remove material 74, and a chlorine-based etch chemistry may be used to remove material 76. In particular, the etch chemistries may be selected for removal of each of the materials based on the composition and other characteristics of the materials. Preferably, the portions of the different materials are removed in different steps of one etch process that can be carried out in one etch chamber. In addition, the portions of the different materials may be removed in the different steps using the same electron beam. One or more parameters of the electron beam can be altered between the removal steps such that the electron beam may be optimized for removal of both of the different materials. However, it is to be understood that in some instances, removal of the portions of the different materials may be carried out in different etch processes that are performed in different etch chambers possibly in the same etch tool. Obviously, such etch processes would be carried out with different electron beams, which may also have parameters that are optimized for removal of the different materials.
As shown in
As described further above, portions 80 and 84 of materials 74 and 76 that are removed proximate defect 70 laterally surround defect 70. In this manner, the portions of the materials that are removed have an area in which the defect resides. As such, all sides of the defect may be exposed after the portions of the materials have been removed such that analysis of the defect may be performed from various angles with respect to the defect. In one embodiment, the portions of the materials that are removed have areas that are equal to or less than about 10 μm by about 10 μm. Therefore, the area on the substrate in which materials are removed is relatively small, particularly when compared to the amount of material that is typically removed by other de-layering processes. In this manner, the methods described herein may be performed on product wafers since in most instances removing material from such a small area on the product wafer should not adversely affect the product wafer as a whole. The area of the portions of the materials that are removed may vary depending on, for example, the area on the substrate that is illuminated by the electron beam, as described above.
The method shown in
Chemical delivery subsystem 88 may include gas source(s) 96 (only one of which is shown in
Chemical delivery subsystem 88, process chamber 92 and stage 94 may be further configured as described in these patents. For example, process chamber 92 may include pressure gauge 104. Pressure gauge 104 may be configured to measure a pressure within the process chamber. The pressure gauge may be coupled to processor 106 by transmission medium 108. Transmission medium 108 may include any appropriate transmission medium known in the art. In addition, the transmission medium may include “wired” and “wireless” portions. Processor 106 may be configured to alter one or more parameters of the system depending on the pressure measured by pressure gauge 104. In a similar manner, processor 106 may be coupled to other components of the system (e.g., valve 100) and may be configured to alter other parameters of the system depending on the process being carried out in chamber 92.
The system also includes electron delivery subsystem 110. Electron delivery subsystem 110 is configured to deliver an electron beam (not shown) to substrate 90. The electron delivery subsystem may be further configured as described herein. The one or more chemicals delivered by chemical delivery subsystem 88 in combination with the electron beam delivered by electron delivery subsystem 110 removes a portion of a material on the substrate proximate to the defect. The one or more chemicals in combination with the electron beam may remove a portion of one or more materials as shown in
The defect, the substrate, the material(s), and the portion of the material(s) that are removed may include any of those described above. For example, in one embodiment, the defect may be a subsurface defect or a partially subsurface defect. Alternatively, the defect may be a surface defect. In addition, the portion of the material that is removed may have an area that is equal to or less than about 10 μm by about 10 μm. Furthermore, since the area of the material that is removed is relatively small, the substrate may be a product wafer. However, the substrate may include any other substrates described herein.
In some embodiments, the one or more chemicals delivered by chemical delivery subsystem 88 in combination with the electron beam delivered by electron delivery subsystem 100 may remove a portion of an additional material on the substrate proximate to the defect, as shown in
The system shown in
In one embodiment, electron delivery subsystem 110 may be configured to measure a characteristic of the defect using the electron beam. Parameters of the electron beam used for removal may be different than parameters of the electron beam that are used for measurement. The parameters of the electron beam may be altered between removal and measurement by altering one or more parameters of the electron delivery subsystem. The parameter(s) of the electron delivery subsystem may be altered or controlled by processor 106 in some embodiments.
In one embodiment, electron delivery subsystem 110 may be configured to image the defect using a technique such as scanning electron microscopy. In another embodiment, electron delivery subsystem 110 may be used to image the defect as the material is being removed. In this manner, the defect and the de-layering process can be monitored and recorded, which may provide further information about the defect, the material proximate the defect, and the de-layering process. Such information may be used to optimize the de-layering process. In addition, such information may be used to control the de-layering process as it is being carried out (i.e., in real time).
In another example, electron delivery subsystem 110 may be configured to determine a composition of the defect using a technique such as EDX, which is described further above. In this manner, electron delivery subsystem 110 may be configured to function as the analysis subsystem. In a different embodiment, the analysis subsystem may include an x-ray analysis system (not shown) such as those described above or any of those known in the art. The analysis subsystem may be coupled to the system shown in
In the methods and systems described above, de-layering is accomplished with a combination of electrons and injected etchant gases at the substrate surface. In such embodiments, the de-layering selectivity is largely determined by the etch rates that are obtained by adjusting the etchant gases and the electron beam settings. Although de-layering using electron beam assisted chemical etching is a highly effective de-layering method that offers preferential etching of horizontal surfaces over vertical surfaces mainly from the effect of the incident electron beam, heating of the substrate can further accelerate the etching by accelerating the desorption of reaction by-products at the surface of the substrate. For example, as further described herein, the substrate surfaces can be heated using light to assist the electron and etchant gas reactions.
In one embodiment, a light beam that is coaxially aligned with the electron beam is used to assist in the etch reaction by heating the substrate surface. In particular, the coaxial tight beam amplifies the preferential etching of the horizontal surfaces by enhancing the effects of the electron beam on the substrate. For example, by aligning the light beam coaxially with the electron beam, the light beam can preferentially heat the horizontal surfaces. In other words, the coaxial tight beam heats the horizontal surfaces on the substrate and does not substantially heat the vertical surfaces. This differential surface heating is used to accelerate the vertical over lateral etching of substrate surfaces. In particular, the etchant gases preferentially etch the horizontal surfaces that are irradiated by both electrons and light. In this manner, the addition of light to the de-layering processes described above can increase the anisotropy of the de-layering processes. Such additional anisotropy may be advantageous since the ability to remove device films while maintaining the original aspect ratio of the device features or any other three-dimensional features is critical in defect review and analysis.
In addition, by selecting the light beam wavelength, different materials on the substrate can be differentially and preferentially heated. For example, the light source may be selected such that the light has a wavelength that can be absorbed by the material that is being removed from the substrate. In this manner, the wavelength may be selected to preferentially heat material(s) that absorb light at that wavelength. As such, the wavelength can be selected to maximize the selectivity between different materials. Such heating may be particularly desirable during de-layering of contacts, capacitors, or other three-dimensional features on the substrate that include two or more materials that are simultaneously being de-layered.
As shown in
The selection of an etch chemistry may vary depending on, for example, the composition of material 116, the composition of defect 112, and the composition of any other materials on the substrate that might be exposed to the etch chemistry. For example, the etch chemistry is preferably selected such that it does not substantially alter or etch the defect, particularly since the defect is to be analyzed after de-layering as further described herein. In addition, the etch chemistry is preferably selected such that it has good selectivity for material 116 (i.e., it etches material 116 faster than it etches other materials on substrate 114) and, if possible, such that it has good anisotropy (i.e., it etches horizontal surfaces of material 116 faster than it etches vertical surfaces of material 116). Furthermore, the etch chemistry is preferably selected such that it does not substantially etch materials on the substrate other than material 116. In this manner, the etch chemistry may not damage the substrate or other materials or features exposed to the etch chemistry. In addition, the selectivity of the de-layering process can be altered by changing one or more parameters of the electron beam and/or one or more parameters of the light beam.
As shown in
The wavelength of light beam 122 will vary depending on the material that is being removed. For example, the wavelength of light beam 122 may be selected such that the light can be absorbed by the material. In this manner, the light beam may heat the material as described above. In addition, the light beam may have one wavelength (e.g., monochromatic light), approximately one wavelength (e.g., near monochromatic light), or more than one wavelength of light polychromatic light or broadband light). Examples of appropriate wavelengths include, but are not limited to, about 1054 nm (near infrared), about 527 nm (visible, green), about 350 nm (near ultraviolet), and about 266 nm (ultraviolet). In general, appropriate wavelength(s) may include any wavelength(s) from about 266 nm to about 1054 nm.
If light having different wavelengths is delivered to the substrate at the same time or sequentially, each wavelength of light may heat a specific material on the substrate more than it heats others. Therefore, as material is removed from the substrate, the wavelength of the light that is delivered to the substrate may be changed. For example, after a portion of a material on the substrate is removed, a different material formed under the material may be removed using the chemical etching in combination with the electron beam and the light beam, but with different parameters for at least the light beam. In this manner, removing a portion of more than one material on a substrate may include differentially heating each material with the light beam. In a similar way, when more than one material is being removed from a substrate, parameters of the etch chemistry and/or the electron beam may be changed when different materials are being removed. In this manner, parameters of each component used in the de-layering process may be optimized for removal of the material(s) on the substrate. In addition, parameters of each component used in the de-layering process may be altered to maximize the selectivity of the de-layering process. In particular, the parameters may be altered depending on the composition of the defect, the composition of the material, and in some instances the composition of the substrate. Preferably, the parameters of the etch chemistry, the electron beam, and the light beam used in the de-layering process are optimized to minimize removal of the defect while maximizing removal of the material.
As described further above, light beam 122 preferentially heats material 116 on substrate 114. Heating material 116 with light beam 122 in the presence of etch chemistry 124 and electron beam 120 increases the preferential etching of the horizontal surfaces of material 116. In particular, by delivering light beam 122 to substrate 114 coaxially with electron beam 120, horizontal surfaces of the material can be heated without substantially heating vertical surfaces of the material. In this manner, electron and light beam assisted chemical etching can be substantially anisotropic. As a result, the de-layering methods described herein provide the ability to remove device films while maintaining the original aspect ratio of the device features or any other three-dimensional features on the substrate, which is critical in defect review and analysis.
As shown in
As described further above, portion 126 of material 116 that is removed proximate defect 112 laterally surrounds defect 112. In this manner, the portion of the material that is removed has an area in which the defect resides. As such, all sides of the defect may be exposed after the portion of the material is removed such that analysis of the defect may be performed from various angles. In one embodiment, the portion of the material that is removed has an area that is equal to or less than about 10 μm by about 10 μm. Therefore, the area on the substrate in which material is removed is relatively small, particularly when compared to the amount of material that is typically removed by other de-layering processes. In this manner, the methods described herein may be performed on product wafers since in most instances removing material from such a small area on the product wafer should not adversely affect the product wafer as a whole.
The area of the portion of the material that is removed may vary depending on, for example, the area on the substrate that is illuminated by the electron beam and the light beam. For example, in the methods and systems described herein, etching takes place only in the presence of etchant gases in combination with the electron beam. In this manner, the diameter of the electron beam may be altered depending on, for example, the lateral dimensions of the defect, the area that is selected for removal, the analysis that is to be carried out on the defect, the characteristics of the material being removed, and/or the characteristics of the substrate. In addition, the area of the portion of the material that is removed may also vary depending on, for example, the area on the substrate that is illuminated by the light beam. The area on the substrate that is illuminated by the light beam may be altered using any method or device known in the art. In one particular example, the area of the material that is removed is preferably kept at a minimum (to avoid damaging or destroying neighboring structures if present) while allowing enough space around the defect for analysis to be successfully completed.
The method may also include analyzing defect 112 to determine a characteristic of the defect. The characteristic of the defect that is determined may include any characteristic that may be of interest such as dimensions (width and height), profile, composition, roughness, etc. Therefore, the characteristic of the defect that is to be determined may determine what analysis is performed on the defect. In one embodiment, analyzing the defect may be performed using an electron beam to determine the characteristic of the defect. In one particular embodiment, as shown in
In one such embodiment, electron beam 120 may be used to image the defect using a technique such as scanning electron microscopy. The image of the defect may then be used for defect review or to determine characteristics such as lateral dimensions of the defect. In another embodiment, electron beam 120 may be used to image the defect as the material is being removed. In this manner, the defect and the de-layering process can be monitored and recorded, which may provide further information about the defect, the material proximate the defect, and the de-layering process. The information may be used to monitor and/or control the de-layering process as described further herein. In another embodiment, the electron beam may be used to determine a composition of the defect using a technique such as EDX or AES, as described further above. Once the defect composition has been determined, the de-layering methods described herein may be altered to maximize the selectivity between the defect and the surrounding films.
In another embodiment, an x-ray analysis system (not shown) may be used to determine a characteristic of the defect. For example, a characteristic of a defect such as composition can be determined using a technique such as XPS or XRF. In another example, an XRR technique may be used to measure a characteristic of a defect such as a concentration of an element in the defect. The x-ray analysis system may be further configured as described above. In other embodiments, analysis of the defect may be performed using any other analytical technique known in the art. For example, the defect may be analyzed using SIMS, as described further above.
In other embodiments, light beam 122 may be used to analyze the defect. For example, light beam 122 may be used to image the defect. The image of the defect may then be used to determine one or more characteristics of the defect. The characteristic(s) of the defect that can be determined in this manner may include, but are not limited to, a lateral dimension of the defect, a height of the defect, etc. Parameters of the light beam may be changed between removal and analysis. For example, a wavelength and/or a polarization of the light beam may be changed after de-layering but before analysis of the defect is performed. Other parameters of light beam 122 may be similarly altered between removal and analysis. In another embodiment, light beam 122 may be used to image the defect as the material is being removed. In this manner, the defect and the de-layering process can be monitored and recorded, which may provide further information about the defect, the material proximate the defect, and the de-layering process. This information can be used to monitor and/or control the de-layering process as described further herein. In other embodiments, a different light beam may be used to analyze the defect as described herein. This light beam may or may not be coaxial with electron beam 120.
As shown in
Delivering the light beam to the substrate coaxially with the electron beam eliminates the problems outlined above. As shown in
As shown in
The electron and light delivery subsystem shown in
Light source 148 may be a laser. However, the light source may be any other appropriate tight source known in the art. In general, light sources that are relatively bright at their operating wavelengths may be particularly suitable for use in the systems described herein. One example of an appropriate laser is a Q-switched laser in the 100 mW range. Another appropriate laser may be a Ti-sapphire laser. The light source may also be a single wavelength laser or a multiple wavelength laser. In addition, the light beam may be generated using more than one tight source. For example, light from several lasers may be combined into an optical train with a combiner. In another example, different light beams may be generated by different lasers, and the light beam that is delivered to the substrate may vary depending on the material being removed. In this manner, not all of the different light beams may be delivered to the substrate at the same time.
The wavelength of light beam 150 will vary depending on the material that is being removed. For example, depending on the material being removed, the wavelength of light beam 150 is selected such that the light can be absorbed by the material. In this manner, the electron and light delivery subsystem may be configured such that light beam 150 heats a material on the substrate as described above. In addition, the light beam may have one wavelength (e.g., monochromatic light), approximately one wavelength (e.g., near monochromatic light), or more than one wavelength of light (e.g., polychromatic light or broadband light). Examples of appropriate wavelengths include, but are not limited to, about 1054 nm (near infrared), about 527 nm (visible, green), about 350 nm (near ultraviolet), and about 266 nm (ultraviolet). In general, appropriate wavelength(s) may include any wavelength(s) from about 266 nm to about 1054 nm.
If light having different wavelengths is delivered to the substrate at the same time or sequentially, each wavelength may heat a specific material more than it heats others. Therefore, as material is removed from the substrate, the wavelength of the light that is delivered to the substrate may be changed. For example, after a portion of a material on the substrate is removed, a different material formed under the material may be removed using the chemical etching in combination with the electron beam and the light beam, but with different parameters for at least the light beam. In this manner, the electron and light delivery subsystem may be configured such that light beam 150 differentially heats each material with the light beam. In a similar way, when more than one material is being removed from a substrate, parameters of the etch chemistry and/or the electron beam may be changed when different materials are being removed. In this manner, parameters of each component used in the de-layering process may be optimized for removal of the material(s) on the substrate. In addition, parameters of each component used in the de-layering process may be altered to maximize the selectivity of the de-layering process. In particular, the parameters may be altered depending on the composition of the defect, the composition of the material, and in some instances the composition of the substrate. Preferably, the parameters of the etch chemistry, the electron beam, and the light beam used in the de-layering process are optimized to minimize removal of the defect while maximizing removal of the material.
As described further above, light beam 150 preferentially heats the portion of the material on the substrate that is being removed. Heating the material with light beam 150 in the presence of an etch chemistry and electron beam 160 increases the preferential etching of the horizontal surfaces of the portion of the material being removed. In particular, by delivering light beam 150 to a substrate coaxially with electron beam 160, the electron and light delivery subsystem may be configured such that light beam 150 heats a horizontal surface of the material and does not substantially heat a vertical surface of the material. In this manner, electron and light beam assisted chemical etching can be substantially anisotropic. As a result, the de-layering methods described herein provide the ability to remove device films while maintaining the original aspect ratio of the device features or any other three-dimensional features on the substrate, which is critical in defect review and analysis.
A system that includes the electron and light delivery subsystem shown in
In one embodiment, the electron and light delivery subsystem may be configured to measure a characteristic of the defect using electron beam 160. In this manner, the electron and light delivery subsystem may be configured to function as the analysis subsystem. For example, electron beam 160 that was used for de-layering may also be used to analyze the defect. Parameters of the electron beam used for de-layering may be different than parameters of the electron beam that are used to measure the characteristic of the defect. The parameters of the electron beam may be altered between removal and measurement by altering one or more parameters of the electron and light delivery subsystem. The parameter(s) of the electron and light delivery subsystem may be altered or controlled by a processor (not shown) in some embodiments. The processor may be further configured as described above.
In one embodiment, the electron and light delivery subsystem may be configured to image the defect using a technique such as scanning electron microscopy. The image of the defect may then be used for defect review or to determine characteristics such as lateral dimensions of the defect. In another embodiment, the electron and light delivery subsystem may be used to image the defect as the material is being removed. In this manner, the defect and the de-layering process can be monitored and recorded, which may provide further information about the defect, the material proximate the defect, and the de-layering process. This information may be used to monitor and/or control the de-layering process as described above. In another example, the electron and light delivery subsystem may be configured to determine a composition of the defect using a technique such as EDX, which is described further above. Once the defect composition has been determined, the de-layering methods described herein may be altered to maximize the selectivity between the defect and the surrounding films.
In other embodiments, light beam 150 may be used to analyze the defect. In this manner, the electron and light delivery subsystem may be configured to analyze the defect using light beam 150 and/or electron beam 160. In one example, light beam 150 may be used to image the defect. The image of the defect may then be used to determine one or more characteristics of the defect such as those described further above. Parameters of the light beam may be changed between removal and analysis as described above. In another embodiment, light beam 150 may be used to image the defect as the material is being removed. In this manner, the defect and the de-layering process can be monitored and recorded, which may provide further information about the defect, the material proximate the defect, and the de-layering process. This information may also be used as described above. In other embodiments, analysis of the defect may be performed using a different light beam (not shown), which may or may not be coaxial with the electron beam.
In another embodiment, the analysis subsystem may include an x-ray analysis system such as those described above or any of those known in the art. In other embodiments, analysis of the defect may be performed using any other analytical technique known in the art. For example, the defect may be analyzed using SIMS, as described further above. The analysis system may be coupled to the system in any manner. For example, the analysis system and the system may be disposed in one housing, coupled by a common processor, a common substrate handler, a common power source, a transmission medium, etc. The embodiment of the electron and light delivery subsystem shown in
Further modifications and alternate embodiments of various aspects of the invention may be apparent to those skilled in the art in view of this description. For example, methods and systems for measuring a characteristic of a substrate or preparing a substrate for analysis are provided. Accordingly, this description is to be construed as illustrative only and is for the purpose of teaching those skilled in the art the general manner of carrying out the invention. It is to be understood that the forms of the invention shown and described herein are to be taken as the presently preferred embodiments. Elements and materials may be substituted for those illustrated and described herein, parts and processes may be reversed, and certain features of the invention may be utilized independently, all as would be apparent to one skilled in the art after having the benefit of this description of the invention. Changes may be made in the elements described herein without departing from the spirit and scope of the invention as described in the following claims.
Claims
1. A system configured to prepare a substrate for analysis, comprising:
- a chemical delivery subsystem configured to deliver one or more chemicals to a substrate; and
- an electron delivery subsystem configured to deliver an electron beam to the substrate, wherein the one or more chemicals in combination with the electron beam remove a portion of a material on the substrate proximate to a defect.
2. The system of claim 1, wherein the electron delivery subsystem is further configured to measure a characteristic of the defect using the electron beam.
3. The system of claim 1, further comprising an analysis subsystem configured to measure a characteristic of the defect, wherein the analysis subsystem comprises an x-ray analysis system.
4. A system configured to prepare a substrate for analysis, comprising:
- a chemical delivery subsystem configured to deliver one or more chemicals to a substrate; and
- an electron and light delivery subsystem configured to deliver an electron beam to the substrate coaxially with a light beam, wherein the one or more chemicals in combination with the electron beam and the light beam remove a portion of a material on the substrate proximate to a defect.
5. The system of claim 4, wherein the electron and light delivery subsystem comprises a laser configured to generate the light beam.
6. The system of claim 4, wherein the electron and light delivery subsystem comprises an electron column, and wherein the electron column comprises an optical window configured to allow the light beam to enter the electron column.
7. The system of claim 4, wherein the electron and light delivery subsystem comprises a mirror with an aperture formed through the mirror, wherein the electron beam passes through the aperture, and wherein the light beam is reflected from the mirror such that the light beam is coaxial with the electron beam.
8. The system of claim 4, wherein the electron and light delivery subsystem is further configured such that the light beam heats the material.
9. The system of claim 4, wherein the electron and light delivery subsystem is further configured such that the light beam heats a horizontal surface of the material and does not substantially heat a vertical surface of the material.
10. The system of claim 4, wherein the electron and light delivery subsystem is further configured to measure a characteristic of the defect using the electron beam.
11. The system of claim 4, further comprising an analysis subsystem configured to measure a characteristic of the defect, wherein the analysis subsystem comprises an x-ray analysis system.
Type: Application
Filed: Jun 11, 2014
Publication Date: Oct 2, 2014
Inventors: Mehran Nasser-Ghodsi (Hamilton, MA), Mark Borowicz (San Jose, CA), Dave Bakker (Cupertino, CA), Mehdi Vaez-Iravani (Los Gatos, CA), Prashant Aji (San Jose, CA), Rudy Garcia (Union City, CA), Tzu Chin Chuang (Cupertino, CA)
Application Number: 14/302,370
International Classification: H01J 37/317 (20060101); H01J 37/244 (20060101);
