Abstract: A flexible flat cable structure capable of improving crosstalk interference includes plural telecommunication signal conductors separated from one another and provided for transmitting differential signals, two support members installed on two lateral sides of the telecommunication signal conductor respectively, at least one filled material disposed between the telecommunication signal conductors. The ratio of the equivalent dielectric constant of the filled material to the equivalent dielectric constant of the support members falls within a range of 0.39˜0.27, and the ratio of the thickness of the filled material to the thickness of the support members falls within a range of 1.49˜1.37.

Abstract: A flexible flat cable structure capable of improving crosstalk interference includes plural telecommunication signal conductors separated from one another and provided for transmitting differential signals, two support members installed on two lateral sides of the telecommunication signal conductor respectively, at least one filled material disposed between the telecommunication signal conductors. The ratio of the equivalent dielectric constant of the filled material to the equivalent dielectric constant of the support members falls within a range of 0.39˜0.27, and the ratio of the thickness of the filled material to the thickness of the support members falls within a range of 1.49˜1.37.

Abstract: The invention provides a semiconductor package assembly with a TSV interconnect. The semiconductor package assembly includes a first semiconductor package mounted on a base, having: a semiconductor die, a semiconductor substrate, and a first array of TSV interconnects and a second array of TSV interconnects formed through the semiconductor substrate, wherein the first array and second array of TSV interconnects are separated by an interval region. The assembly further includes a second semiconductor die mounted on the first semiconductor package, having a ground pad thereon. One of the TSV interconnects of the first semiconductor package has a first terminal coupled to the ground pad of the second semiconductor die and a second terminal coupled to an interconnection structure disposed on a front side of the semiconductor substrate.

Abstract: The invention provides a semiconductor package assembly with a TSV interconnect. The semiconductor package assembly includes a first semiconductor die mounted on a base. The first semiconductor die includes a semiconductor substrate. A first array of TSV interconnects and a second array of TSV interconnects are formed through the semiconductor substrate, wherein the first array and second array of TSV interconnects are separated by an interval region. A first ground TSV interconnect is disposed within the interval region. A second semiconductor die is mounted on the first semiconductor die, having a ground pad thereon. The first ground TSV interconnect of the first semiconductor die has a first terminal coupled to the ground pad of the second semiconductor die and a second terminal coupled to an interconnection structure disposed on a front side of the semiconductor substrate.

Abstract: The invention provides a semiconductor package assembly with a TSV interconnect. The semiconductor package assembly includes a first semiconductor die mounted on a base. The first semiconductor die includes a semiconductor substrate. A first array of TSV interconnects and a second array of TSV interconnects are formed through the semiconductor substrate, wherein the first array and second array of TSV interconnects are separated by an interval region. A first ground TSV interconnect is disposed within the interval region. A second semiconductor die is mounted on the first semiconductor die, having a ground pad thereon. The first ground TSV interconnect of the first semiconductor die has a first terminal coupled to the ground pad of the second semiconductor die and a second terminal coupled to an interconnection structure disposed on a front side of the semiconductor substrate.

Abstract: A method for forming a vertical coupling structure for non-adjacent resonators is provided to have a first and a second resonators, a dielectric material layer, a first and a second high-frequency transmission lines and at least one via pole. The first and the second resonators respectively have a first and a second opposite metal surfaces. The dielectric material layer is disposed between the opposite second metal surfaces of the first and the second resonators. The first and the second transmission lines are respectively arranged at sides of the first metal surfaces of the first resonator and the second resonator. The first high-frequency transmission line is vertically connected to the second high-frequency transmission line by the via pole.

Abstract: A vertical coupling structure for non-adjacent resonators is provided. The vertical coupling structure has a first resonator and a second resonator. At least one side of the first resonator is formed as a first bent extension structure, and the first bent extension structure includes a slot. The second resonator is not adjacent to the first resonator, and the side of the second resonator opposite to the first bent extension structure of the first resonator further includes a slot, such that the two sides are electrically connected.

Abstract: A vertical coupling structure for non-adjacent resonators is provided. The vertical coupling structure has a first resonator and a second resonator. At least one side of the first resonator is formed as a first bent extension structure, and the first bent extension structure includes a slot. The second resonator is not adjacent to the first resonator, and the side of the second resonator opposite to the first bent extension structure of the first resonator further includes a slot, such that the two sides are electrically connected.

Abstract: A vertical coupling structure for non-adjacent resonators is provided to have a first and a second resonators, a dielectric material layer, a first and a second high-frequency transmission lines and at least one via pole. The first and the second resonators respectively have a first and a second opposite metal surfaces. The dielectric material layer is disposed between the opposite second metal surfaces of the first and the second resonators. The first and the second transmission lines are respectively arranged at sides of the first metal surfaces of the first resonator and the second resonator. The first high-frequency transmission line is vertically connected to the second high-frequency transmission line by the via pole.

Abstract: A method for forming a vertical coupling structure for non-adjacent resonators is provided to have a first and a second resonators, a dielectric material layer, a first and a second high-frequency transmission lines and at least one via pole. The first and the second resonators respectively have a first and a second opposite metal surfaces. The dielectric material layer is disposed between the opposite second metal surfaces of the first and the second resonators. The first and the second transmission lines are respectively arranged at sides of the first metal surfaces of the first resonator and the second resonator. The first high-frequency transmission line is vertically connected to the second high-frequency transmission line by the via pole.

Abstract: A vertical coupling structure for non-adjacent resonators is provided to have a first and a second resonators, a dielectric material layer, a first and a second high-frequency transmission lines and at least one via pole. The first and the second resonators respectively have a first and a second opposite metal surfaces. The dielectric material layer is disposed between the opposite second metal surfaces of the first and the second resonators. The first and the second transmission lines are respectively arranged at sides of the first metal surfaces of the first resonator and the second resonator. The first high-frequency transmission line is vertically connected to the second high-frequency transmission line by the via pole.

Abstract: A measuring method for equivalent circuitry is disclosed herein to characterize the interconnects using time-domain reflectometry measurement. By combining the layer peeling algorithm for transmission lines and the matrix-pencil approach for discontinuities, the technique yields a simple equivalent circuit model which consists of distributed transmission lines and networks of lumped elements. With element values being independent of frequency, the model is well suited to model nonlinear broadband circuit simulation for electrical performance of the interconnects.

Abstract: A novel design of high frequency hidden hand-held antenna which includes two metal arms above a lower arm of finite ground plane. By properly choosing the lengths of these arms and the separations between them, the bandwidth can be broadened more than 20%. Thus, it is suitable for personal mobile communication applications. A full wave equivalent circuit analytic model is also developed to analyze and optimize the geometrical configuration including the lengths and separations between the arms. Numerical analyses for current distribution on the conductor surface and various antenna characteristics such as input impedance and radiation patterns are computed by the use of the analytical models. Experimental results and numerical computations all confirm that better performance characteristics including broadened antenna bandwidth are achieved by this novel antenna.

Abstract: An electrical delay line is described. Said line is free from early or late arriving false signals of sufficient amplitude to trigger subsequent stages in the circuitry. This has been accomplished through use of a novel approach to designing the delay line. Said approach is described and data is given comparing conventional delay lines with the present invention.