Abstract: The present invention provides a method for preparing a 6-aminohexyl lactoside-NOTA conjugate. The preparation method comprises brominating perbenzoylated lactose with hydrobromic acid; glycosylating 6-azidohexanol to obtain 6-azidohexyl perbenzoyl lactoside; and deprotecting this precursor in two steps to obtain 6-aminohexyl lactoside and conjugating 6-aminohexyl lactoside to NCS-benzyl-NODA GA (i.e. 2,2?-(7-(1-carboxy-4-((4-isothiocyanate benzyl) amino)-4-oxobutyl)-1,4,7-triazonane-1,4-diyl) diacetic acid) in triethyl amine as an alkaline solvent, to obtain a 6-aminohexyl lactoside-NCS-benzyl-NODA GA conjugate. In this novel preparation method, no deglycosylated side product is produced, such that the yield is considerably increased to 46%. Therefore, the method is suitable for future massive production since the requirement for repeated preparations for massive production is reduced, and the impurities produced in the previously scaled-up preparation process are not present.

Abstract: A screening machine for superfine powder. The screening machine includes a casing, a screen drum, a funnel, a negative pressure chamber, a rotary air spray pipe, a drive motor, a blast pipe, and a feed pipe. The screen drum is disposed in the middle part of the inner cavity of the casing. The funnel is disposed beneath the casing. The opening of the screen drum is arranged on the bottom of the screen drum and communicates with the upper opening of the funnel. The inner cavity of the casing communicates with the external induced draft fan via the negative pressure chamber disposed on the upper part of the casing. The rotary air spray pipe is arranged in the space between the screen drum and the casing. The middle part of the transverse pipe is connected via a transmission with the drive motor.

Abstract: A surface-emitting semiconductor laser device that includes an edge-emitting laser formed in layers of semiconductor material disposed on a semiconductor substrate, a polymer material disposed on the substrate laterally adjacent the layers in which the edge-emitting laser is formed, a diffractive or refractive lens formed on an upper surface of the polymer material, a side reflector formed on an angled side reflector facet of the polymer material generally facing an exit end facet of the laser, and a lower reflector disposed on the substrate beneath the polymer material. Laser light passes out of the exit end facet and propagates through the polymer material before being reflected by the side reflector toward the lower reflector. The laser light is then re-reflected by the lower reflector towards the lens, which directs the laser light out the device in a direction that is generally normal to the upper surface of the substrate.

Abstract: Described herein is a method for obtaining a three-dimensional nanostructure array on an aluminum substrate. The method includes anodizing the aluminum substrate; forming an oxide layer on the aluminum substrate; texturizing the aluminum substrate; etching the oxide layer from the aluminum substrate to expose the texturized aluminum substrate; and forming a three-dimensional aluminum nanostructure array on the aluminum substrate. The three-dimensional nanostructure array, coated with a light absorber, is utilized in a thin film solar cell or photovoltaic cell.

Abstract: A surface-emitting semiconductor laser device is provided that includes an edge-emitting laser integrated in a semiconductor material with various reflectors and a diffractive lens. The edge-emitting laser has a first section comprising an active MQW region, a second section comprising a passive region and a third section comprising a semi-insulating or un-doped semiconductor bulk layer. This configuration ensures that the injection current will pass through all of the layers of the active region, thereby preventing the occurrence of optical losses due to un-injected areas of the MQW active region. In addition, the inclusion of the passive region ensures that there is no current passing through the interface between the active MQW region and the regrown semiconductor bulk layer. The latter feature improves performance and device reliability.

Abstract: A surface-emitting semiconductor laser device is provided that includes an edge-emitting laser integrated in a semiconductor material with various reflectors and a diffractive lens. The edge-emitting laser has a first section comprising an active MQW region, a second section comprising a passive region and a third section comprising a semi-insulating or un-doped semiconductor bulk layer. This configuration ensures that the injection current will pass through all of the layers of the active region, thereby preventing the occurrence of optical losses due to un-injected areas of the MQW active region. In addition, the inclusion of the passive region ensures that there is no current passing through the interface between the active MQW region and the regrown semiconductor bulk layer. The latter feature improves performance and device reliability.

Abstract: A surface-emitting semiconductor laser device is provided that includes an edge-emitting laser formed in various layers of semiconductor material disposed on a semiconductor substrate, a polymer material disposed on the substrate laterally adjacent the layers in which the edge-emitting laser is formed, and a reflector formed in or on an angled side facet of the polymer material generally facing an exit end facet of the laser. Laser light passes out of the exit end facet propagates through the polymer material before being reflected by the reflector out of the device in a direction that is generally normal to the upper surface of the substrate.

Abstract: A surface-emitting semiconductor laser device is provided that includes an edge-emitting laser formed in various layers of semiconductor material disposed on a semiconductor substrate, a polymer material disposed on the substrate laterally adjacent the layers in which the edge-emitting laser is formed, a diffractive or refractive lens formed in or on an upper surface of the polymer material, a side reflector formed on an angled side reflector facet of the polymer material generally facing an exit end facet of the laser, and a lower reflector disposed on the substrate beneath the polymer material. Laser light passes out of the exit end facet and propagates through the polymer material before being reflected by the side reflector toward the lower reflector. The laser light is then re-reflected by the lower reflector towards the lens, which directs the laser light out the device in a direction that is generally normal to the upper surface of the substrate.

Abstract: Various embodiments of this disclosure may describe a bandpass sigma-delta modulator (BP ??M) comprising an electromechanical filter, a quantizer coupled to the electromechanical filter, and a feedback circuit coupled between the quantizer and the electromechanical filter. Other embodiments be also be disclosed or claimed.

Abstract: Briefly, in accordance with one embodiment of the invention, a resonator such as an electromechanical resonator may be coupled with a cancellation network to reduce and/or cancel an anti-resonance effect in the resonator, which may be due to, for example, a static capacitance inherent in the resonator. Cancellation of an anti resonance effect from the resonator response may allow a resonance effect of the resonator to be a predominant effect to allow the resonator to be utilized as a bandpass filter having a relatively higher Q, for example in a bandpass sigma-delta modulator that may be utilized in a digital RF receiver.

Abstract: An EML assembly is provided that has and EAM and a DFB, with the DFB having an asymmetric ¼ wavelength phase shift positioned at a location that is in front of the center of the periodic structure of the DFB. In addition, the EML assembly has a tilted or bent waveguide that reduces reflections occurring at the front end facet, thereby enabling the EAM to produce a relatively high POUT level while also achieving reduced chirp and high single-mode yield in the DFB. By providing the EML assembly with a tilted or bent waveguide, the reflections at the front end facet are reduced without having to use an AR coating on the front end facet that has an extremely low reflectivity. By avoiding the need to use an AR coating on the front end facet that has an extremely low reflectivity, the AR coating that is used on the front end facet can be made using standard sputter deposition techniques to enable higher manufacturing yields to be achieved.

Abstract: The present invention relates broadly to a system and method for bandpass sigma-delta modulation. The continuous time bandpass sigma-delta modulator comprises an electromechanical filter, a quantizer coupled to an output from the electromechanical filter; and a feedback circuit coupled between an output from the quantizer and an input of the electromechanical filter.

Abstract: In an arrangement comprised of an electro-absorption modulator integrated with a laser source, the electro-absorption modulator includes a respective metal contact pad, wherein the metal pad is positioned over a localised semi-insulating layer island, such as a Fe—InP island.

Abstract: An laser/modulator assembly includes a laser source, such as a distributed feedback (DFB) laser, and a modulator, such as an electro-absorption modulator (EAM), integrated along a common waveguide. The waveguide has a distal end bent to define an inner side of the bent waveguide. A low reflectivity facet is arranged at the distal end of the waveguide, and a mirror is arranged at the inner side of the distal end of the waveguide to prevent any back reflection into the EAM waveguide from said low reflectivity facet, and the lateral trenches typically associated therewith.

Abstract: Briefly, in accordance with one embodiment of the invention, a resonator such as an electromechanical resonator may be coupled with a cancellation network to reduce and/or cancel an anti-resonance effect in the resonator, which may be due to, for example, a static capacitance inherent in the resonator. Cancellation of an anti resonance effect from the resonator response may allow a resonance effect of the resonator to be a predominant effect to allow the resonator to be utilized as a bandpass filter having a relatively higher Q, for example in a bandpass sigma-delta modulator that may be utilized in a digital RF receiver.