Abstract: A method and apparatus for forming a crystalline cadmium stannate layer of a photovoltaic device by heating an amorphous layer in the presence of hydrogen gas.

Abstract: A method of manufacturing a photovoltaic device may include concurrently transforming a transparent conductive oxide layer from a substantially amorphous state to a substantially crystalline state and forming one or more semiconductor layers.

Abstract: A heat treatment process of high-Mg Er-containing aluminum alloy cold-rolled plates resistant to intergranular corrosion is disclosed, which belongs to the field of non-ferrous metals. The mass percentage of each component of high-Mg Er-containing aluminum alloy heat-rolled plates is, respectively, 5.8%-6.8% of Mg, 0.4%-0.8% of Mn, 0.15%-0.25% of Er, 0.15%-0.25% of Zr, the unavoidable impurities content being less than 4%, the balance being Al. The alloy hot-rolled plates are cold-rolled until the final cold deformation being 75%-90% after the intermediate annealing; the aluminum alloy cold-rolled plates undergo a stabilization annealing at the annealing temperature of 235° C. to 245° C. for 3.5-4 hours, and then is cooled in air to room temperature. This process significantly improves the resistance to intergranular corrosion while it does not reduce the strength of the alloy significantly.

Abstract: A photovoltaic module including a dielectric tunneling layer and methods of forming a photovoltaic module with a dielectric tunneling layer.

Abstract: A method to improve operation of a CdTe-based photovoltaic device is disclosed, the method comprising the steps of depositing a semiconductor absorber layer adjacent to a substrate, depositing a semiconductor buffer layer adjacent to the semiconductor layer, and annealing at least one of the semiconductor absorber layer and the semiconductor buffer layer with one of a laser and a flash lamp.

Abstract: A method and system for real-time, in-line calculations of opto-electronic properties and thickness of the layers of multi-layered transparent conductive oxide stacks of photovoltaic devices is provided. The method and system include taking measurements of each layer of the stack during deposition thereof. The measurements are then used to calculate the opto-electronic properties and thicknesses of the layers in real-time.

Abstract: A method and apparatus for forming a crystalline cadmium stannate layer of a photovoltaic device by heating an amorphous layer in the presence of hydrogen gas.

Abstract: A method of doping solar cell front contact can improve the efficiency of CdTe-based or other kinds of solar cells.

Abstract: Methods and devices are described for a photovoltaic device and substrate structure. In one embodiment, a photovoltaic device includes a substrate structure and a CdTe absorber layer, the substrate structure including a Zn1-xMgxO window layer and a low conductivity buffer layer. Another embodiment is directed to a process for manufacturing a photovoltaic device including forming a Zn1-xMgxO window layer over a substrate by at least one of sputtering, evaporation deposition, CVD, chemical bath deposition process and vapor transport deposition process. The process including forming a CdTe absorber layer above the Zn1-xMgxO window layer.

Abstract: A method of doping solar cell front contact can improve the efficiency of CdTe-based or other kinds of solar cells.

Abstract: Methods and devices are described for a photovoltaic device and substrate structure. In one embodiment, a photovoltaic device includes a substrate structure and a CdTe absorber layer, the substrate structure including a Zn1-xMgxO window layer and a low conductivity buffer layer. Another embodiment is directed to a process for manufacturing a photovoltaic device including forming a Zn1-xMgxO window layer over a substrate by at least one of sputtering, evaporation deposition, CVD, chemical bath deposition process and vapor transport deposition process. The process including forming a CdTe absorber layer above the Zn1-xMgxO window layer.

Abstract: A cBN material and a method of making a cBN material, the method including the steps of providing a powder mixture comprising cBN grains, aluminum and a Ti(CxNyOz)a powder, subjecting the powder mixture to a milling to form a powder blend, subjecting the powder blend to a forming operation to form a green body, subjecting the green body to a pre-sintering step, at a temperature between 650 to 950° C., to form a pre-sintered body, and subjecting the pre-sintered body to a HPHT operation to form the cBN material. For the Ti(CxNyOz)a powder, 0.05?z?0.4. In addition, a cBN material includes cBN grains, an Al2O3 phase, a binder phase of TiC, TiN and/or TiCN, W and Co, whereby a quotient Q is <0.25 of the cBN material.

Abstract: The joint device for a tire forming machine comprises a joint device connection frame, composite part laminating device, and cord fabric stitching device, wherein the joint device connection frame axially slides along a portal frame through a connection frame drive device, and is located above the vertical direction of a tire body drum; the composite part laminating device is carried on a joint device connection frame through a composite part frame body; the composite part laminating device comprises an axial laminating drive device and a vertical laminating drive device for controlling and driving a compression roller component located on a composite workstation on the tire body drum; the cord fabric stitching device is carried on the joint device connection frame through a main stitching frame; the cord fabric stitching device comprises an axial stitching drive device and a vertical stitching drive device for controlling and driving a stitching wheel component located on a stitching workstation on the tire

Abstract: A method to improve operation of a CdTe-based photovoltaic device is disclosed, the method comprising the steps of depositing a semiconductor absorber layer adjacent to a substrate, depositing a semiconductor buffer layer adjacent to the semiconductor layer, and annealing at least one of the semiconductor absorber layer and the semiconductor buffer layer with one of a laser and a flash lamp.

Abstract: Methods and devices are described for a photovoltaic device. The photovoltaic device includes a glass substrate, a semiconductor absorber layer formed over the glass substrate, a metal back contact layer formed over the semiconductor absorber layer, and a p-type back contact buffer layer formed from one of MnTe, Cd1-xMnxTe, and SnTe, the buffer layer disposed between the semiconductor absorber layer and the metal back contact layer.

Abstract: A photovoltaic device and its method of manufacture are disclosed. The device is formed by forming a window layer over a substrate, forming an absorber layer over the window layer, and annealing the absorber layer using a laser beam to remove contaminants from the surface of the absorber layer and/or to reduce the thickness of the absorber layer.

Abstract: A photovoltaic device includes a substrate structure and a p-type semiconductor absorber layer, the substrate structure including a CdSSe layer. A photovoltaic device may alternatively include a CdSeTe layer. A process for manufacturing a photovoltaic device includes forming a CdSSe layer over a substrate by at least one of sputtering, evaporation deposition, CVD, chemical bath deposition process, and vapor transport deposition process. The process includes forming a p-type absorber layer above the CdSSe layer.

Abstract: A method and system for real-time, in-line calculations of opto-electronic properties and thickness of the layers of multi-layered transparent conductive oxide stacks of photovoltaic devices is provided. The method and system include taking measurements of each layer of the stack during deposition thereof. The measurements are then used to calculate the opto-electronic properties and thicknesses of the layers in real-time.

Abstract: A method and system for real-time, in-line measurements of thicknesses of semiconductor layers of photovoltaic devices is provided. The method and system include taking ex-situ optical data measurements after deposition of the semiconductor layers. The measurements are then used to calculate the thicknesses of the layers in real-time using optical modeling software.

Abstract: A heat treatment process of high-Mg Er-containing aluminum alloy cold-rolled plates resistant to intergranular corrosion is disclosed, which belongs to the field of non-ferrous metals. The mass percentage of each component of high-Mg Er-containing aluminum alloy heat-rolled plates is, respectively, 5.8%-6.8% of Mg, 0.4%-0.8% of Mn, 0.15%-0.25% of Er, 0.15%-0.25% of Zr, the unavoidable impurities content being less than 4%, the balance being Al. The alloy hot-rolled plates are cold-rolled until the final cold deformation being 75%-90% after the intermediate annealing; the aluminum alloy cold-rolled plates undergo a stabilization annealing at the annealing temperature of 235° C. to 245° C. for 3.5-4 hours, and then is cooled in air to room temperature. This process significantly improves the resistance to intergranular corrosion while it does not reduce the strength of the alloy significantly.