Abstract: An insert for a cutting tool and a method of making an insert are provided. The insert for a cutting tool may comprise a body and a substrate carrier. The body may have a top, a bottom, and a plurality of side walls connected to the top and the bottom. The body may comprise superhard particles in absence of a support. The substrate carrier may have a recess. The bottom and the sidewall of the body may be adapted to be affixed to the recess of the substrate carrier.

Abstract: A method and composition of a sintered superhard compact is provided. The sintered superhard compact body may comprise superhard particles and a binder phase. The binder phase may bond the superhard particles together. The binder phase comprises tungsten and cobalt. The ratio of tungsten to cobalt is between 1 and 2 and sum of W and Co in the sintered superhard compact is in a range of from about 2 to about 20 percent by weight.

Abstract: A photovoltaic module including a dielectric tunneling layer and methods of forming a photovoltaic module with a dielectric tunneling layer.

Abstract: A method and apparatus for forming a crystalline cadmium stannate layer of a photovoltaic device by heating an amorphous layer in the presence of hydrogen gas.

Abstract: Described herein is a contact for a photovoltaic device and method of making the same. The contact has a transparent conductive oxide stack, where a first portion of the transparent conductive oxide stack is formed by atmospheric pressure vapor deposition and a second portion of the transparent conductive oxide stack is formed by physical vapor deposition.

Abstract: Methods and devices are described for a photovoltaic device and substrate structure. In one embodiment, a photovoltaic device includes a substrate structure and a CdTe absorber layer, the substrate structure including a Zn1?xMgxO window layer and a low conductivity buffer layer. Another embodiment is directed to a process for manufacturing a photovoltaic device including forming a Zn1?xMgxO window layer over a substrate by at least one of sputtering, evaporation deposition, CVD, chemical bath deposition process and vapor transport deposition process. The process including forming a CdTe absorber layer above the Zn1?xMgxO window layer.

Abstract: A structure for use in a photovoltaic device is disclosed, the structure includes a substrate, a buffer material, a barrier material in contact with the substrate; and a transparent conductive oxide between the buffer material and the barrier material. The buffer material comprises at least one of CdZnO and SnZnO. The structure can be included in a photovoltaic device. Methods for forming the structure are also disclosed.

Abstract: Methods and devices are described for a photovoltaic device and substrate structure. In one embodiment, a photovoltaic device includes a substrate structure and a MS 1-xOx window layer formed over the substrate structure, wherein M is an element from the group consisting of Zn, Sn, and In. Another embodiment is directed to a process for manufacturing a photovoltaic device including forming a MS 1-xOx window layer over a substrate by at least one of sputtering, evaporation deposition, CVD, chemical bath deposition process and vapor transport deposition process, wherein M is an element from the group consisting of Zn, Sn, and In.

Abstract: A multilayered structure including a first barrier layer adjacent to a substrate, a barrier bi-layer adjacent to the first barrier layer, the barrier bi-layer comprising a second barrier layer and a third barrier layer, a transparent conductive oxide layer adjacent to the barrier bi-layer, and a buffer layer adjacent to the transparent conductive oxide layer and method of forming the same. A multilayered substrate including a barrier layer structure having a plurality of barrier layers being alternating layers of low refractive index material and high refractive index material, a transparent conductive oxide layer adjacent to the barrier bi-layer and a buffer layer adjacent to the transparent conductive oxide layer. The multilayered structure may serve as a front contact for photovoltaic devices.

Abstract: A method of manufacturing a photovoltaic device may include concurrently transforming a transparent conductive oxide layer from a substantially amorphous state to a substantially crystalline state and forming one or more semiconductor layers.

Abstract: A solar cell with a doped buffer layer includes silicon and tin.

Abstract: A photovoltaic cell with a doped buffer layer includes a metal oxide and a dopant.

Abstract: A method of doping solar cell front contact can improve the efficiency of CdTe-based or other kinds of solar cells.

Abstract: A method of manufacturing a photovoltaic cell may include depositing a cadmium sulfide layer on a transparent conductive oxide stack; depositing a zinc-containing layer on the cadmium sulfide layer; and depositing a cadmium telluride layer on the zinc-containing layer.

Abstract: A photovoltaic cell can include a substrate having a transparent conductive oxide layer, a heterojunction layer, and a cadmium telluride layer. The layers can be deposited by sputtering or by chemical vapor deposition.

Abstract: Scanning probe techniques based on the measurement of impedance spectroscopy using a conductive an SPM tip is provided and applied to the study of local transport properties, especially at a grain boundary. The contributions of the grain boundaries and tip-surface interaction can be distinguished based on the analysis of the equivalent circuit. The technique is applicable for both the spatially resolved study of transport mechanisms of polycrystalline semiconductors and the tip-surface contact quality. A piezoresponse force microscopy technique yields quantitative information about local non-linear dielectric properties and higher order electromechanical coupled of ferroelectrics.

Abstract: Scanning probe techniques based on the measurement of impedance spectroscopy using a conductive an SPM tip is provided and applied to the study of local transport properties, especially at a grain boundary. The contributions of the grain boundaries and tip-surface interaction can be distinguished based on the analysis of the equivalent circuit. The technique is applicable for both the spatially resolved study of transport mechanisms of polycrystalline semiconductors and the tip-surface contact quality. A piezoresponse force microscopy technique yields quantitative information about local non-linear dielectric properties and higher order electromechanical coupled of ferroelectrics.