Patents by Inventor Ruifeng Sun

Ruifeng Sun has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20130082780
    Abstract: Techniques are disclosed relating to radio frequency (RF) power detection. In one embodiment, a power detection unit is disclosed that includes a multiplier circuit configured to receive a first voltage of a voltage differential signal at gates of a first transistor pair and a second voltage of the voltage differential signal at gates of a second transistor pair. The first multiplier is configured to output a current that varies proportionally to a square of a voltage difference between the first and second voltages. In some embodiments, sources of the first transistor pair are coupled to sources of the second transistor pair, and the sources of the second transistor pair are coupled together. In some embodiments, the power detection unit is configured to compensate for mismatched transistors by applying offset voltages to bodies of transistors in the first and second transistor pairs.
    Type: Application
    Filed: September 30, 2011
    Publication date: April 4, 2013
    Inventors: Ravi K. Kummaraguntla, Ruifeng Sun
  • Patent number: 8385867
    Abstract: In one embodiment, a set of tracking filters to be coupled between an amplifier and a mixer is provided. The tracking filters may be differently configured depending on band of operation. For example, a first set of the filters can be configured to maintain a substantially constant Q value across their operating bandwidth while a second set of the filters can be configured to maintain a substantially constant bandwidth across their operating bandwidth.
    Type: Grant
    Filed: June 29, 2009
    Date of Patent: February 26, 2013
    Assignee: Silicon Laboratories Inc.
    Inventors: Aslamali A. Rafi, Chunyu Xin, Ruifeng Sun, Abhishek Kammula, Ramin Khoini-Poorfard, Alessandro Piovaccari, Peter J. Vancorenland
  • Patent number: 8339179
    Abstract: In one form, a power converter for a power detector or the like includes first and third transistors of a first conductivity type, and second and fourth transistors of a second conductivity type. A control electrode of the first transistor receives a first bias voltage plus a positive component of a differential input signal. The second transistor is coupled in series with the first transistor and has a control electrode receiving a second bias voltage plus a negative component of the differential input signal. The third transistor is biased using the first bias voltage plus the negative component. The fourth transistor is coupled in series with the third transistor and is biased using the second bias voltage plus the positive component. A common interconnection point of the first and third transistors forms an output node.
    Type: Grant
    Filed: August 13, 2012
    Date of Patent: December 25, 2012
    Assignee: Silicon Laboratories, Inc.
    Inventors: Ruifeng Sun, Yunteng Huang
  • Publication number: 20120299623
    Abstract: In one form, a power converter for a power detector or the like includes first and third transistors of a first conductivity type, and second and fourth transistors of a second conductivity type. A control electrode of the first transistor receives a first bias voltage plus a positive component of a differential input signal. The second transistor is coupled in series with the first transistor and has a control electrode receiving a second bias voltage plus a negative component of the differential input signal. The third transistor is biased using the first bias voltage plus the negative component. The fourth transistor is coupled in series with the third transistor and is biased using the second bias voltage plus the positive component. A common interconnection point of the first and third transistors forms an output node.
    Type: Application
    Filed: August 13, 2012
    Publication date: November 29, 2012
    Inventors: Ruifeng Sun, Yunteng Huang
  • Patent number: 8264255
    Abstract: In one form, a power detector includes first and third transistors of a first conductivity type, and second and fourth transistors of a second conductivity type. A control electrode of the first transistor receives a first bias voltage plus a positive component of a differential input signal. The second transistor is coupled in series with the first transistor and has a control electrode receiving a second bias voltage plus a negative component of the differential input signal. The third transistor is biased using the first bias voltage plus the negative component. The fourth transistor is coupled in series with the third transistor and is biased using the second bias voltage plus the positive component. A common interconnection point of the first and third transistors forms an output node. In another form, a power detector compares an output of a power detector core to multiple threshold voltages in corresponding comparators.
    Type: Grant
    Filed: November 3, 2009
    Date of Patent: September 11, 2012
    Assignee: Silicon Laboratories Inc.
    Inventors: Ruifeng Sun, Yunteng Huang
  • Patent number: 8151029
    Abstract: A demodulator can include first data and clock pads to couple the demodulator to a host device via a first bus, and second data and clock pads to couple the demodulator to a radio frequency (RF) tuner via a second bus. The device may further include passthrough logic to couple host data and a host clock from the first bus to the second bus and to couple tuner data from the second bus to the first bus during a passthrough mode. During this mode, however, the two buses may remain electrically decoupled. When the passthrough mode is disabled, the RF tuner is thus shielded from noise present on the first bus.
    Type: Grant
    Filed: December 30, 2010
    Date of Patent: April 3, 2012
    Assignee: Silicon Laboratories Inc.
    Inventors: Scott Haban, Dylan Hester, Ruifeng Sun
  • Publication number: 20110102047
    Abstract: In one form, a power detector includes first and third transistors of a first conductivity type, and second and fourth transistors of a second conductivity type. A control electrode of the first transistor receives a first bias voltage plus a positive component of a differential input signal. The second transistor is coupled in series with the first transistor and has a control electrode receiving a second bias voltage plus a negative component of the differential input signal. The third transistor is biased using the first bias voltage plus the negative component. The fourth transistor is coupled in series with the third transistor and is biased using the second bias voltage plus the positive component. A common interconnection point of the first and third transistors forms an output node. In another form, a power detector compares an output of a power detector core to multiple threshold voltages in corresponding comparators.
    Type: Application
    Filed: November 3, 2009
    Publication date: May 5, 2011
    Applicant: SILICON LABORATORIES, INC.
    Inventors: Ruifeng Sun, Yunteng Huang
  • Publication number: 20110099310
    Abstract: A demodulator can include first data and clock pads to couple the demodulator to a host device via a first bus, and second data and clock pads to couple the demodulator to a radio frequency (RF) tuner via a second bus. The device may further include passthrough logic to couple host data and a host clock from the first bus to the second bus and to couple tuner data from the second bus to the first bus during a passthrough mode. During this mode, however, the two buses may remain electrically decoupled. When the passthrough mode is disabled, the RF tuner is thus shielded from noise present on the first bus.
    Type: Application
    Filed: December 30, 2010
    Publication date: April 28, 2011
    Inventors: Scott Haban, Dylan Hester, Ruifeng Sun
  • Patent number: 7882282
    Abstract: A demodulator can include first data and clock pads to couple the demodulator to a host device via a first bus, and second data and clock pads to couple the demodulator to a radio frequency (RF) tuner via a second bus. The device may further include passthrough logic to couple host data and a host clock from the first bus to the second bus and to couple tuner data from the second bus to the first bus during a passthrough mode. During this mode, however, the two buses may remain electrically decoupled. When the passthrough mode is disabled, the RF tuner is thus shielded from noise present on the first bus.
    Type: Grant
    Filed: May 21, 2008
    Date of Patent: February 1, 2011
    Assignee: Silicon Laboratories Inc.
    Inventors: Scott Haban, Dylan Hester, Ruifeng Sun
  • Publication number: 20100328546
    Abstract: In one embodiment, a set of tracking filters to be coupled between an amplifier and a mixer is provided. The tracking filters may be differently configured depending on band of operation. For example, a first set of the filters can be configured to maintain a substantially constant Q value across their operating bandwidth while a second set of the filters can be configured to maintain a substantially constant bandwidth across their operating bandwidth.
    Type: Application
    Filed: June 29, 2009
    Publication date: December 30, 2010
    Inventors: Aslamali A. Rafi, Chunyu Xin, Ruifeng Sun, Abhishek Kammula, Ramin Khoini-Poorfard, Alessandro Piovaccari, Peter J. Vancorenland
  • Publication number: 20090292843
    Abstract: A demodulator can include first data and clock pads to couple the demodulator to a host device via a first bus, and second data and clock pads to couple the demodulator to a radio frequency (RF) tuner via a second bus. The device may further include passthrough logic to couple host data and a host clock from the first bus to the second bus and to couple tuner data from the second bus to the first bus during a passthrough mode. During this mode, however, the two buses may remain electrically decoupled. When the passthrough mode is disabled, the RF tuner is thus shielded from noise present on the first bus.
    Type: Application
    Filed: May 21, 2008
    Publication date: November 26, 2009
    Inventors: Scott Haban, Dylan Hester, Ruifeng Sun