Abstract: A semiconductor storage according to an embodiment of the present disclosure includes two power source paths, and a connection path that connects the power source paths. Each of the power source paths includes a power gate transistor and a current source transistor which are coupled in series. The connection path connects ends of the respective power source paths on a side of the current source transistor. The semiconductor storage further includes a storage element, and a switch element inserted between the connection path and the storage element. A back gate is coupled to an internal node in the current source transistor provided in a low-side path of the two power source paths.

Abstract: Fuse data is supplied to each of a plurality of function blocks through a transfer path using shift registers. When the reliability of fuse elements is low, there is a possibility that a part of the fuse data may have an error. Further, when the transfer path of the fuse data is long, there is a possibility that a value of the fuse data may be inverted due to an influence of noises. Thus, a decoder is arranged in the transfer path of the fuse data, and encoded data is stored in the fuse elements. By performing error detection/correction in the decoder, the high reliability is assured with respect to chip operations and the like.

Abstract: Fuse data is supplied to each of a plurality of function blocks through a transfer path using shift registers. When the reliability of fuse elements is low, there is a possibility that a part of the fuse data may have an error. Further, when the transfer path of the fuse data is long, there is a possibility that a value of the fuse data may be inverted due to an influence of noises. Thus, a decoder is arranged in the transfer path of the fuse data, and encoded data is stored in the fuse elements. By performing error detection/correction in the decoder, the high reliability is assured with respect to chip operations and the like.

Abstract: Fuse data is supplied to each of a plurality of function blocks through a transfer path using shift registers. When the reliability of fuse elements is low, there is a possibility that a part of the fuse data may have an error. Further, when the transfer path of the fuse data is long, there is a possibility that a value of the fuse data may be inverted due to an influence of noises. Thus, a decoder is arranged in the transfer path of the fuse data, and encoded data is stored in the fuse elements. By performing error detection/correction in the decoder, the high reliability is assured with respect to chip operations and the like.

Abstract: Fuse data is supplied to each of a plurality of function blocks through a transfer path using shift registers. When the reliability of fuse elements is low, there is a possibility that a part of the fuse data may have an error. Further, when the transfer path of the fuse data is long, there is a possibility that a value of the fuse data may be inverted due to an influence of noises. Thus, a decoder is arranged in the transfer path of the fuse data, and encoded data is stored in the fuse elements. By performing error detection/correction in the decoder, the high reliability is assured with respect to chip operations and the like.

Abstract: Fuse data is supplied to each of a plurality of function blocks through a transfer path using shift registers. When the reliability of fuse elements is low, there is a possibility that a part of the fuse data may have an error. Further, when the transfer path of the fuse data is long, there is a possibility that a value of the fuse data may be inverted due to an influence of noises. Thus, a decoder is arranged in the transfer path of the fuse data, and encoded data is stored in the fuse elements. By performing error detection/correction in the decoder, the high reliability is assured with respect to chip operations and the like.

Abstract: A fuse and fuse latch includes first and second fuse and fuse latches each serving as a redundancy information storage circuit. Fuse elements and a fuse latch are provided in each of the first and second fuse and fuse latches. The first and second fuse and fuse latches each output latched data as serial data to a fuse data transfer control circuit. The fuse data transfer control circuit serving as a redundancy information creation circuit is configured of a counter and a data transfer control circuit. The data transfer control circuit combines data output from the first and second fuse and fuse latches, thereby to create new data.

Abstract: A sense amplifier is connected to a pair of bit lines to read/write data. A bit line equalizer equalizes the potentials of the pair of bit lines. A sense amplifier equalizer equalizes the potentials of two power supply nodes of the sense amplifier. The sense amplifier equalizer is constituted by two types of MOS transistors whose gate oxide films have different thicknesses. MOS transistors of one type are formed in a thick film type Tr area. MOS transistors of the other type are formed in a thick film type Tr area.

Abstract: A sense amplifier is connected to a pair of bit lines to read/write data. A bit line equalizer equalizes the potentials of the pair of bit lines. A sense amplifier equalizer equalizes the potentials of two power supply nodes of the sense amplifier. The sense amplifier equalizer is constituted by two types of MOS transistors whose gate oxide films have different thicknesses. MOS transistors of one type are formed in a thick film type Tr area. MOS transistors of the other type are formed in a thick film type Tr area.

Abstract: A sense amplifier is connected to a pair of bit lines to read/write data. A bit line equalizer equalizes the potentials of the pair of bit lines. A sense amplifier equalizer equalizes the potentials of two power supply nodes of the sense amplifier. The sense amplifier equalizer is constituted by two types of MOS transistors whose gate oxide films have different thicknesses. MOS transistors of one type are formed in a thick film type Tr area. MOS transistors of the other type are formed in a thick film type Tr area.

Abstract: A semiconductor device includes a prime memory cell array, a redundant memory cell array, a holding circuit, a group of access lines, and first and second controlling circuits. The prime memory cell array includes prime memory cells. The redundant memory cell array includes redundant memory cells. The holding circuit holds an address of a defective memory cell. The access lines are respectively connected to the redundant memory cells. The first controlling circuit supplies a substitution command to substitute a redundant memory cell for the defective memory cell corresponding to the address held in the holding circuit, through the group of access lines to the defective memory cell. The second controlling circuit, when a plurality of portions of the holding circuit holds the address of the defective memory cell, disables all but one of the plurality of portions which hold the address of the defective memory cell.

Abstract: Fuse data is supplied to each of a plurality of function blocks through a transfer path using shift registers. When the reliability of fuse elements is low, there is a possibility that a part of the fuse data may have an error. Further, when the transfer path of the fuse data is long, there is a possibility that a value of the fuse data may be inverted due to an influence of noises. Thus, a decoder is arranged in the transfer path of the fuse data, and encoded data is stored in the fuse elements. By performing error detection/correction in the decoder, the high reliability is assured with respect to chip operations and the like.

Abstract: A semiconductor device includes a prime memory cell array, a redundant memory cell array, a holding circuit, a group of access lines, and first and second controlling circuits. The prime memory cell array includes prime memory cells. The redundant memory cell array includes redundant memory cells. The holding circuit holds an address of a defective memory cell. The access lines are respectively connected to the redundant memory cells. The first controlling circuit supplies a substitution command to substitute a redundant memory cell for the defective memory cell corresponding to the address held in the holding circuit, through the group of access lines to the defective memory cell. The second controlling circuit, when a plurality of portions of the holding circuit holds the address of the defective memory cell, disables all but one of the plurality of portions which hold the address of the defective memory cell.

Abstract: A sense amplifier is connected to a pair of bit lines to read/write data. A bit line equalizer equalizes the potentials of the pair of bit lines. A sense amplifier equalizer equalizes the potentials of two power supply nodes of the sense amplifier. The sense amplifier equalizer is constituted by two types of MOS transistors whose gate oxide films have different thicknesses. MOS transistors of one type are formed in a thick film type Tr area. MOS transistors of the other type are formed in a thick film type Tr area.

Abstract: A semiconductor device includes a prime memory cell array, a redundant memory cell array, a holding circuit, a group of access lines, and first and second controlling circuits. The prime memory cell array includes prime memory cells. The redundant memory cell array includes redundant memory cells. The holding circuit holds an address of a defective memory cell. The access lines are respectively connected to the redundant memory cells. The first controlling circuit supplies a substitution command to substitute a redundant memory cell for the defective memory cell corresponding to the address held in the holding circuit, through the group of access lines to the defective memory cell. The second controlling circuit, when a plurality of portions of the holding circuit holds the address of the defective memory cell, disables all but one of the plurality of portions which hold the address of the defective memory cell.

Abstract: A semiconductor device includes first, second and third semiconductor circuits. The first semiconductor circuit has a first function. The second semiconductor circuit has a second function different from the first function. The third semiconductor circuit is provided in the second semiconductor circuit and has part of the first function. The third semiconductor circuit transmits/receives no signals to/from the second semiconductor circuit and operates independently of the second semiconductor circuit.

Abstract: A semiconductor device includes a prime memory cell array, a redundant memory cell array, a holding circuit, a group of access lines, and first and second controlling circuits. The prime memory cell array includes prime memory cells. The redundant memory cell array includes redundant memory cells. The holding circuit holds an address of a defective memory cell. The access lines are respectively connected to the redundant memory cells. The first controlling circuit supplies a substitution command to substitute a redundant memory cell for the defective memory cell corresponding to the address held in the holding circuit, through the group of access lines to the defective memory cell. The second controlling circuit, when a plurality of portions of the holding circuit holds the address of the defective memory cell, disables all but one of the plurality of portions which hold the address of the defective memory cell.

Abstract: A semiconductor device includes first, second and third semiconductor circuits. The first semiconductor circuit has a first function. The second semiconductor circuit has a second function different from the first function. The third semiconductor circuit is provided in the second semiconductor circuit and has part of the first function. The third semiconductor circuit transmits/receives no signals to/from the second semiconductor circuit and operates independently of the second semiconductor circuit.

Abstract: A semiconductor memory device comprises a data line shifting circuit for connecting a plurality of data lines and spare data lines to a plurality of I/O data lines, a plurality of I/O numbering circuits for assigning the I/O data lines shift indicating numbers as locational information, the shift indicating numbers incrementing by one for each start point for data line shifting executed by the data line shifting circuit, a selection circuit for storing the correlationship between defective column addresses and the shift indicating numbers and outputting a selection signal corresponding to the shift indicating numbers when a defective-column address is input, a shift control circuit for comparing the selection signal with the shift indicating numbers and outputting a shift control signal to the data line shifting circuit based on a result of the comparison, and a number setting selecting circuit for selectively using a plurality of I/O numbering circuits.

Abstract: On a semiconductor substrate, there are formed a first macro cell having wiring layers of three layers each formed of a metal wiring layer (for example, an aluminum wiring) and a second macro cell having wiring layers of three layers each formed of a metal wiring layer similar to the first macro cell. The first macro cell is formed to have a wiring structure of three wiring layers though the originally necessary number of metal wiring layers is two. The metal wiring layer of each layer on the first macro cell is formed of the same material as the metal wiring layer of the corresponding each layer on the second macro cell. Moreover, the metal wiring layer of each layer is formed to have the same film thickness. In order to connect the first and second macro cells to each other, a macro interconnection wiring is formed to be included in the third wiring layer (uppermost wiring layer).