Abstract: An acoustic wave device is provided between a first terminal that is an antenna terminal and a second terminal that is different from the first terminal, and includes a plurality of acoustic wave resonators. The plurality of acoustic wave resonators include a plurality of series arm resonators and a plurality of parallel arm resonators. When the acoustic wave resonator electrically closest to the first terminal among the plurality of acoustic wave resonators is an antenna end resonator, the antenna end resonator is a SAW resonator or a BAW resonator. At least one acoustic wave resonator other than the antenna end resonator among the plurality of acoustic wave resonators is a first acoustic wave resonator.

Abstract: Of a plurality of acoustic wave resonators, the acoustic wave resonator electrically closest to a first terminal is an antenna end resonator, the antenna end resonator is a first acoustic wave resonator and at least one acoustic wave resonator other than the antenna end resonator of the plurality of acoustic wave resonators is a second acoustic wave resonator. An acoustic wave device satisfies a first condition. The first condition is a condition that a high acoustic velocity layer of the first acoustic wave resonator and a high acoustic velocity layer of the second acoustic wave resonator each include a silicon substrate, a surface closer to a piezoelectric layer in the silicon substrate of the first acoustic wave resonator is a plane or a plane, and a surface closer to a piezoelectric layer in the silicon substrate of the second acoustic wave resonator is a plane.

Abstract: In an acoustic wave device, an antenna end resonator that is electrically closest to a first terminal is a first acoustic wave resonator. In each of the first acoustic wave resonator and a second acoustic wave resonator, a thickness of a piezoelectric layer is about 3.5? or less when a wavelength of an acoustic wave is denoted as ?. The first acoustic wave resonator and the second acoustic wave resonator satisfy at least one of a first condition, a second condition, and a third condition. The first condition is a condition that the first acoustic wave resonator further includes a dielectric film provided between the piezoelectric layer and an interdigital transducer electrode, and the second acoustic wave resonator does not include the dielectric film.

Abstract: An image processing apparatus includes: at least one processor and/or at least one circuit to perform operations of the following units: an acquisition unit configured to acquire luminance information that indicates characteristic value of luminance of inputted image data; and a conversion unit configured to convert colors of the image data into conversion colors which are respectively associated with sub-ranges determined by dividing a luminance range of the image data using thresholds, wherein a first threshold of the thresholds is the characteristic value.

Abstract: An acoustic wave device includes a silicon oxide film, a piezoelectric body made of lithium tantalate, and interdigital transducer electrodes stacked on a supporting substrate made of silicon, in which the values of the wave length-normalized film thickness and the Euler angle of the piezoelectric body made of lithium tantalate, the wave length-normalized film thickness of the silicon oxide film, the wave length-normalized film thickness of the interdigital transducer electrodes in terms of aluminum thickness, the propagation direction of the supporting substrate, and the wave length-normalized film thickness of the supporting substrate are set such that represented by Formula (1) for at least one of responses of first, second, and third higher-order modes is more than about ?2.4, and TSi>20.

Abstract: A multiplexer includes N acoustic wave filters each including one end connected in common and having a different pass band, in which when the N acoustic wave filters are in order from a side of a lower frequency of the pass band, at least one n-th acoustic wave filter among the N acoustic wave filters excluding an acoustic wave filter having the highest frequency of the pass band includes one or more acoustic wave resonators including a support substrate, a silicon nitride film laminated on the support substrate, a silicon oxide film laminated on the silicon nitride film, a piezoelectric body laminated on the silicon oxide film, and an IDT electrode provided on the piezoelectric body. All acoustic wave filters having a pass band in a higher frequency than a frequency of a pass band of the n-th acoustic wave filter satisfy fhl_t(n)>fu(m) or fhl_t(n)<fl(m).

Abstract: An acoustic wave device includes a support substrate, a silicon nitride film stacked on the support substrate, a silicon oxide film stacked on the silicon nitride film, a piezoelectric body stacked on the silicon oxide film and made of lithium tantalite, and an IDT electrode provided on one main surface of the piezoelectric body. For a wavelength normalized film thickness of the piezoelectric body, an Euler angle of the piezoelectric body, a wavelength normalized film thickness of the silicon nitride film, a wavelength normalized film thickness of the silicon oxide film, and a wavelength normalized film thickness of the IDT electrode, values are set so that at least one of a response intensity of a first higher order mode, corresponding to the response intensity of a second higher order mode, and of a response intensity of a third higher mode is greater than about ?2.4.

Abstract: An acoustic wave device includes an interdigital transducer electrode provided on a piezoelectric substrate, the interdigital transducer electrode includes first and second electrode fingers. The second electrode fingers are connected to an electric potential different from that of the first electrode fingers. A direction orthogonal or substantially orthogonal to a direction in which the first electrode fingers and the second electrode fingers extend is an acoustic wave propagation direction, the interdigital transducer electrode includes a first area centrally provided in the acoustic wave propagation direction, second areas provided on one side and another side of the first area in the acoustic wave propagation direction, and third areas each provided on a side of each of the second areas opposite to the first area in the acoustic wave propagation direction.

Abstract: The present disclosure provides novel and improved information processing apparatus, information processing method, and program with which it is easy for a user to predict a future remaining battery amount. According to the present disclosure, there is provided an information processing apparatus including a control unit that performs control to calculate a future prediction value of remaining battery amount on the basis of a use history of an information processing apparatus by a user and to present prediction value related information related to the prediction value to the user. According to the present disclosure, the user can easily predict the future remaining battery amount. Note that the effects described above are not necessarily limitative. With or in the place of the above effects, there may be achieved any one of the effects described in this specification or other effects that may be grasped from this specification.

Abstract: An acoustic wave device includes a silicon oxide film, a piezoelectric body made of lithium tantalate, and interdigital transducer electrodes stacked on a supporting substrate made of silicon, in which the values of the wave length-normalized film thickness and the Euler angle of the piezoelectric body made of lithium tantalate, the wave length-normalized film thickness of the silicon oxide film, the wave length-normalized film thickness of the interdigital transducer electrodes in terms of aluminum thickness, the propagation direction of the supporting substrate, and the wave length-normalized film thickness of the supporting substrate are set such that represented by Formula (1) for at least one of responses of first, second, and third higher-order modes is more than about ?2.4, and TSi>20.

Abstract: In a multiplexer, at least one acoustic wave filter includes a piezoelectric body made of lithium tantalate having Euler angles (?LT=0°±5°, ?LT, ?LT=0°±15°), a support substrate, and an interdigital transducer (IDT) electrode. A frequency fh1_t(n) of a first higher-order mode satisfies below Formulas (3) and (4) in all acoustic wave filters (m) having a higher pass band than at least one acoustic wave filter (n) (n<m?N) in at least one acoustic wave resonator among a plurality of acoustic wave resonators. fh1_t(n)>fu(m) Formula (3). fh1_t(n)<fl(m) Formula (4). Here, fu(m) and fl(m) represent the frequencies of the high-frequency end and the low-frequency end of the pass band in the m acoustic wave filters in Formulas (3) and (4).

Abstract: An acoustic wave device includes a material layer which has Euler angles and an elastic constant at the Euler angles, a piezoelectric body which includes first and second principal surfaces opposing each other, is laminated directly or indirectly on the material layer so that the second principal surface is on the material layer side and has Euler angles, and whose elastic constant at the Euler angles, and an IDT electrode which is disposed on at least one of the first principal surface and the second principal surface of the piezoelectric body. At least one elastic constant among elastic constants C11 to C66 of the material layer not equal to 0 and at least one elastic constant among elastic constants C11 to C66 of the piezoelectric body not equal to 0 have opposite signs to each other.

Abstract: An acoustic wave device includes a material layer with Euler angles and an elastic constant at the Euler angles represented by Expression 1, a piezoelectric body including opposing first and second principal surfaces, is laminated directly or indirectly on the material layer and has Euler angles, and whose elastic constant at the Euler angles is represented by the Expression 1 below, and an IDT electrode on at least one of first and second principal surfaces of the piezoelectric body, and in which a wave length determined by an electrode finger pitch is ?.

Abstract: [Object] To achieve both prevention of overcharging of the battery and convenience of the user. [Solution] An information processing device includes: a charged capacity detection unit configured to detect a charged capacity of a battery; a charging control unit configured to control a charging circuit; and a specification unit configured to specify when discharge of the battery starts. The charging control unit performs charging suppression control on the charging circuit such that the battery is charged to a preparatorily charged capacity that is lower than a fully charged capacity of the battery, on the basis of the charged capacity detected by the charged capacity detection unit, the charging of the battery stops when the charged capacity of the battery reaches the preparatorily charged capacity, and the charging of the battery restarts from the preparatorily charged capacity before discharge of the battery starts.

Abstract: A display apparatus configured to display an input image and a graphics image on a display unit, wherein the graphics image is displayed together with the input image, the display apparatus includes: at least one processor that operates as: obtaining unit configured to receive a setting value relating to display luminance of the display apparatus; detection unit configured to detect a characteristic value of the input image; and control unit configured to display the graphics image on the display unit with a luminance gradation based on the setting value and the characteristic value.

Abstract: An elastic wave resonator including a piezoelectric substrate and an IDT electrode, the IDT electrode includes a first electrode finger and a second electrode finger arranged next to the first electrode finger; when W1 is the width of the first electrode finger, W2 is the width of the second electrode finger, and L is a pitch or an electrode finger center distance between the first electrode finger and the second electrode finger; a metallization ratio (W1/L) of the first electrode finger is smaller than a metallization ratio (W2/L) of the second electrode finger; a sum (W1/L+W2/L) of the metallization ratio of the first electrode finger and the metallization ratio of the second electrode finger is between about 0.65 and about 1.00 inclusive, and a ratio (W2/W1) between a width of the first electrode finger and a width of the second electrode finger is between about 1.12 and about 2.33 inclusive, or W1/L+W2/L is larger than about 1.00, and W2/W1 is between about 1.40 and about 2.34 inclusive.

Abstract: Provided is an information processing apparatus including: a decision unit configured to decide a form of each of a plurality of display objects based on a plurality of contents, on the basis of viewing priority information which has an influence on viewing priority of the content corresponding to the display object; and an output control unit configured to cause an output unit to output each of the plurality of display objects in the form decided by the decision unit.

Abstract: In a wireless communication device that uses different frequencies for transmission and reception, it is not easy to determine and set the frequencies used for transmission and reception. Therefore, this wireless communication device, frequency determination method for a wireless communication device, and program are characterized in that: first reception frequency change plan data is created on the basis of a frequency adjustment plan; a transmission frequency corresponding to the validity period of the frequency adjustment plan is used to transmit the first reception frequency change plan data; second reception frequency change plan data, created by a wireless communication device which is a counterpart of the wireless communication device, is received; and the frequency adjustment plan is updated on the basis of the second reception frequency change plan data.

Abstract: An elastic wave device includes a piezoelectric layer, an IDT electrode on the piezoelectric layer, a high-acoustic-velocity member, a low-acoustic-velocity film between the high-acoustic-velocity member and the piezoelectric layer. The piezoelectric layer is made of lithium tantalate, the IDT electrode includes metal layers including an Al metal layer and a metal layer having a higher density than Al. Expression 1 is satisfied: 301.74667?10.83029×TLT?3.52155×TELE+0.10788×TLT2 +0.01003×TELE2 +0.03989×TLT×TELE?0 expression 1, where ? represents a wavelength defined by an electrode finger pitch of the IDT electrode, TLT (%) represents a normalized film thickness of the piezoelectric layer to the wavelength ?, and TELE (%) represents a normalized film thickness of the IDT electrode in terms of Al to the wavelength ?.

Abstract: To provide an electronic apparatus, a method of detecting a tap operation, etc. for performing appropriate detection processing of a tap operation. The electronic apparatus includes a setting unit 110 that sets a sampling frequency for acceleration detection of an acceleration sensor 10, a processing unit 120 that performs a determination of a tap operation based on sensor information from the acceleration sensor 10, an operation information acquisition unit 130 that acquires operation information from an operation unit 140, and a communication unit 150 that performs communication processing of information, wherein, when reception of the information by the communication unit 150 is detected or when acquisition of the operation information by the operation information acquisition unit 130 is detected, the setting unit 110 sets the sampling frequency to F2 as a higher frequency than the sampling frequency F1 before detection.