Abstract: A dielectric layer extending over a substrate has alternating first and second trenches extending in a first direction. The first trenches have a first shape in cross section along a plane that is perpendicular to the first direction and the second trenches have a second shape in cross section along the plane. Bit lines are located in at least the first trenches.

Abstract: The present invention provides a Group III nitride semiconductor light-emitting device exhibiting improved emission performance. A light-emitting layer has a MQW structure in which a plurality of layer units are repeatedly deposited, each layer unit comprising a well layer, a protective layer, and a barrier layer sequentially deposited. The protective layer has a layered structure comprising a second protective layer disposed in contact with and on the well layer, and a first protective layer disposed in contact with and on the second protective layer. The second protective layer is formed of GaN. The first protective layer is formed of AlGaInN. The first protective layer has a bandgap larger than that of the well layer and not larger than that of the barrier layer. Moreover, the first protective layer has an In composition ratio of more than 0% and not more than 4%.

Abstract: The present invention provides a Group III nitride semiconductor light-emitting device exhibiting improved emission performance. In a MQW structure light-emitting layer in which a plurality of layer units is repeatedly deposited, each layer unit comprising an InGaN well layer, a GaN protective layer, and an AlGaN barrier layer sequentially deposited, the protective layer is formed as follows. The protective layer is grown at the same temperature as employed for the well layer. The growth rate of the protective layer is larger than 0.5 times and not larger than 1.1 times the growth rate of the well layer. The protective layer is formed so as to have a thickness of 5 ? to 8 ? at the start of growth of the barrier layer being formed thereafter.

Abstract: A method of forming a NAND flash memory includes forming a dielectric layer over NAND strings separated by shallow trench isolation structures, forming an opening in a mask layer over the dielectric layer, the opening extending over contact areas, the opening having a first width at first locations over contact areas and having a second width at second locations over shallow trench isolation structures, the second width being less than the first width.

Abstract: A method of forming a NAND flash memory includes forming a dielectric layer over NAND strings separated by shallow trench isolation structures, forming an opening in a mask layer over the dielectric layer, the opening extending over contact areas, the opening having a first width at first locations over contact areas and having a second width at second locations over shallow trench isolation structures, the second width being less than the first width.

Abstract: A method of forming a NAND flash memory includes forming a conductive area in a substrate, the conductive area extending along a direction that is perpendicular to the direction along which NAND strings extend, the conductive area connecting terminals of NAND strings. Discrete contact areas in the conductive area are contacted by discrete contact plugs, each contact plug contacting a corresponding contact area in the conductive area.

Abstract: There is provided a polarizing plate protective film including: a hard coat layer with a thickness of 3 to 10 ?m on at least one surface of a cellulose acylate film with a thickness of 15 to 40 ?m, wherein the hard coat layer is a layer formed by curing a composition for forming a hard coat layer containing specific components, and the polarizing plate protective film has a WVTRA of 300 g/m2/day or less and a ratio WVTRA/WVTRB of 0.6 to 1.0, wherein WVTRA represents a water vapor transmission rate under environments of a temperature of 40° C. and a relative humidity of 90% and WVTRB represents a water vapor transmission rate under environments of a temperature of 40° C. and a relative humidity of 90% after being exposed to the environments of a temperature of 85° C. and a relative humidity of 85% for 24 hours.

Abstract: An emission efficiency of a light-emitting device is improved by reducing strains applied to a light-emitting layer. On a sapphire substrate, an n-type contact layer, an nESD layer, an n-type cladding layer, a light-emitting layer, a p-type cladding layer, and a p-type contact layer, are sequentially deposited. The light-emitting layer has a MQW structure in which a layer unit of a well layer, a capping layer, and a barrier layer sequentially deposited is repeatedly deposited. Of the well layers, the In composition ratio of only first well layer is reduced than the In composition ratios of other well layers, and the In composition ratios of the other well layers are equal to each other. The In composition ratio of the first well layer is designed so that the emission wavelength of the first well layer is equal to the emission wavelengths of other well layers.

Abstract: To provide a Group III nitride semiconductor light-emitting device production method, which is intended to grow a flat light-emitting layer without reducing the In concentration of the light-emitting layer. The method of the techniques includes an n-side superlattice layer formation step, in which an InGaN layer, a GaN layer disposed on the InGaN layer, and an n-type GaN layer disposed on the GaN layer are repeatedly formed. In formation of the InGaN layer, nitrogen gas is supplied as a carrier gas. In formation of the n-type GaN layer, a first mixed gas formed of nitrogen gas and hydrogen gas is supplied as a carrier gas. The first mixed gas has a hydrogen gas ratio by volume greater than 0% to 75% or less.

Abstract: On the well layer, a first InGaN protective layer is formed at the same temperature employed for the well layer through MOCVD. TMI is pulse supplied. A TMI supply amount is kept constant at a predetermined value of more than 0 ?mol/min and not more than 2 ?mol/min. Moreover, a duty ratio is kept constant at a predetermined value of more than 0 and not more than 0.95. The In composition ratio of the first protective layer is almost directly proportional to the duty ratio. The In composition ratio of the first protective layer can be easily and accurately controlled by controlling the duty ratio so as to have an In composition ratio within a range of more than 0 at % and not more than 3 at %.

Abstract: An electric motor control device includes a torque command generation portion that outputs a torque command ?c generated on the basis of a rotation speed R and specifying an output torque, a minimum energization point number generation portion that generates a minimum number of energization points, Nmin, indicating the minimum number of points to be energized in windings of an armature and a field on the basis of the rotation speed R and the torque command ?c, an energization signal generation portion that outputs an energization signal S on the basis of a state quantity M of an electric motor, the minimum number of energization points, Nmin, the torque command ?c, a DC voltage value Vdc, a current value I, and a field position ?, and an energization portion that energizes an armature winding and a field winding according to the energization signal S.

Abstract: The present invention provides a method for producing a Group III nitride semiconductor light-emitting device wherein in the formation of a light-emitting layer by forming a well layer, a capping layer and a barrier layer, the well layer having superior flatness and crystallinity is formed while suppressing the occurrence of damage to the well layer. In formation of the light-emitting layer, pits are provided in the light-emitting layer so that a pit diameter D falls within a range of 120 nm to 250 nm. The light-emitting layer formation step comprises the steps of forming the barrier layer, forming the well layer, and forming the capping layer. The growth temperature of the barrier layer is higher by any temperature in a range of 65° C. to 135° C. than that of the well layer.

Abstract: There is provided a method of manufacturing a hard coat film having a hard coat layer on at least one side of a transparent support, the method comprising curing a hard coat layer forming composition containing (a) a compound having one alicyclic epoxy group and one ethylenically unsaturated double bond group in a molecule and having a molecular weight of 300 or less, (b) a compound having three or more ethylenically unsaturated double bond groups in a molecule, (c) a radical polymerization initiator, and (d) a cationic polymerization initiator in a specific amount.

Abstract: Included are: a voltage command generation unit which generates a voltage command amplitude and a voltage command phase based on a current command value; a phase generation unit during rectangular wave energization, which generates a voltage command phase during rectangular wave energization; and a control switching determination unit which switches by determining as to which control of PWM energization or rectangular wave energization will be performed depending on the amount of the condition of a motor. A switching device unit is driven by the output from a PWM energization unit when switched to the PWM energization; and the switching device unit is driven by the output from a rectangular wave energization unit when switched to the rectangular wave energization. The voltage command generation unit calculates the voltage command amplitude and the voltage command phase by using parameters of the motor.

Abstract: The present invention provides a Group III nitride semiconductor light-emitting device exhibiting improved emission performance. A light-emitting layer has a MQW structure in which a plurality of layer units are repeatedly deposited, each layer unit comprising a well layer, a protective layer, and a barrier layer sequentially deposited. The protective layer has a layered structure comprising a second protective layer disposed in contact with and on the well layer, and a first protective layer disposed in contact with and on the second protective layer. The second protective layer is formed of GaN. The first protective layer is formed of AlGaInN. The first protective layer has a bandgap larger than that of the well layer and not larger than that of the barrier layer. Moreover, the first protective layer has an In composition ratio of more than 0% and not more than 4%.

Abstract: Disclosed is a laminate film comprising an inner layer formed of a composition comprising a polymer material as a main component and an outer layer formed of a composition comprising a polymer material as a main component and laminated on at least one surface of the inner layer, wherein a film thickness of the outer layer differs depending upon a position in the width direction of the laminate film.

Abstract: A fluid joint having a first coupler includes a cylindrical first main body and an outer cylinder located at the outer circumferential side of the first main body, which protrudes to a distal end of the first main body, and is provided with a first engagement portion and a second engagement portion at the distal end. The second coupler includes a second main body provided with a third engagement portion that can engage with the first engagement portion and a fourth engagement portion that can engage with the second engagement portion. The phases of the first engagement portion and the third engagement portion match in the process of engagement thereof, so that the second engagement portion and the fourth engagement portion engage with each other to join the outer cylinder and the second main body together.

Abstract: An electric motor control device includes a torque command generation portion that outputs a torque command ?c generated on the basis of a rotation speed R and specifying an output torque, a minimum energization point number generation portion that generates a minimum number of energization points, Nmin, indicating the minimum number of points to be energized in windings of an armature and a field on the basis of the rotation speed R and the torque command ?c, an energization signal generation portion that outputs an energization signal S on the basis of a state quantity M of an electric motor, the minimum number of energization points, Nmin, the torque command ?c, a DC voltage value Vdc, a current value I, and a field position ?, and an energization portion that energizes an armature winding and a field winding according to the energization signal S.

Abstract: The present invention provides a Group III nitride semiconductor light-emitting device having a flat semiconductor layer, in which the stress applied to the light-emitting layer is relaxed. The light-emitting layer of the light-emitting device includes a well layer and a barrier layer comprising an AlGaN layer containing In. The light-emitting device has a pit extending from an n-type semiconductor layer to layers above the light-emitting layer. A pit diameter at an interface between the light-emitting layer and the n-type semiconductor layer is 120 nm to 200 nm. The barrier layer has an In concentration of 6.0×1019 cm?3.

Abstract: An MQW-structure light-emitting layer is formed by alternately stacking InGaN well layers and AlGaN barrier layers. Each well layer and each barrier layer are formed so as to satisfy the following relations: 12.9??2.8x+100y?37 and 0.65?y?0.86, or to satisfy the following relations: 162.9?7.1x+10z?216.1 and 3.1?z?9.2, here x represents the Al compositional ratio (mol %) of the barrier layer, and y represents the difference in bandgap energy (eV) between the barrier layer and the well layer, and z represents the In compositional ratio (mol %) of the well layer.