Abstract: An MQW-structure light-emitting layer is formed by alternately stacking InGaN well layers and AlGaN barrier layers. Each well layer and each barrier layer are formed so as to satisfy the following relations: 12.9??2.8x+100y?37 and 0.65?y?0.86, or to satisfy the following relations: 162.9?7.1x+10z?216.1 and 3.1?z?9.2, here x represents the Al compositional ratio (mol %) of the barrier layer, and y represents the difference in bandgap energy (eV) between the barrier layer and the well layer, and z represents the In compositional ratio (mol %) of the well layer.

Abstract: Included are: a voltage command generation unit which generates a voltage command amplitude and a voltage command phase based on a current command value; a phase generation unit during rectangular wave energization, which generates a voltage command phase during rectangular wave energization; and a control switching determination unit which switches by determining as to which control of PWM energization or rectangular wave energization will be performed depending on the amount of the condition of a motor. A switching device unit is driven by the output from a PWM energization unit when switched to the PWM energization; and the switching device unit is driven by the output from a rectangular wave energization unit when switched to the rectangular wave energization. The voltage command generation unit calculates the voltage command amplitude and the voltage command phase by using parameters of the motor.

Abstract: The present invention provides a method for producing a Group III nitride semiconductor light-emitting device wherein in the formation of a light-emitting layer by forming a well layer, a capping layer and a barrier layer, the well layer having superior flatness and crystallinity is formed while suppressing the occurrence of damage to the well layer. In formation of the light-emitting layer, pits are provided in the light-emitting layer so that a pit diameter D falls within a range of 120 nm to 250 nm. The light-emitting layer formation step comprises the steps of forming the barrier layer, forming the well layer, and forming the capping layer. The growth temperature of the barrier layer is higher by any temperature in a range of 65° C. to 135° C. than that of the well layer.

Abstract: Disclosed is a polymer film excellent in performance of inducing Rth.

Abstract: A TN-mode liquid crystal display device, which exhibits reduced grayscale inversion and improved white luminance, including: in sequence, a first polarizer, a first retardation film, a first liquid crystal cell substrate, a TN-mode liquid crystal layer, a second liquid crystal cell substrate, a second retardation film, and a second polarizer, wherein the absorption axis of the first polarizer is orthogonal to the absorption axis of the second polarizer, the slow axis of the first retardation film tilts by about 45° from the absorption axis of the first polarizer, the slow axis of the second retardation film tilts by about 135° from the absorption axis of the second polarizer, the slow axis of the first retardation film is orthogonal to the slow axis of the second retardation film, the first retardation film and the second retardation film have the same Re(550), and the first retardation film has a Re(550) of 5?Re(550)?55.

Abstract: A Group III nitride semiconductor light-emitting device includes a sapphire substrate; and an n contact layer, an n cladding layer, a light-emitting layer, a p cladding layer, and a p contact layer, each of the layers being formed of Group III nitride semiconductor, are sequentially deposited on the sapphire substrate. The n cladding layer includes two layers of a high impurity concentration layer and a low impurity concentration layer in this order on the n contact layer, and the low impurity concentration layer is in contact with the light-emitting layer. The low impurity concentration layer is a layer having a lower n-type impurity concentration than that of the high impurity concentration layer, which has an n-type impurity concentration of 1/1000 to 1/100 of the p-type impurity concentration of the p cladding layer and a thickness of 10 ? to 400 ?.

Abstract: An electric motor control apparatus capable of controlling a motor normally regardless of failures is obtained without increased cost. The apparatus includes a position sensor failure determination unit which outputs a failure determination signal, and generates a first phase; a motor rotation speed calculator which operates based on the failure determination signal and position sensor signals; a phase command generator producing a phase command based on the first phase, the failure determination signal and rotation speed; an amplitude command generator that generates an amplitude command indicating magnitude of a driving signal for the motor, and an electrical energization unit that applies the driving signal to the motor based on the phase command and the amplitude command. Upon failure of a position sensor, the phase command generator generates the phase command using the first phase, and a second phase obtained based on the first phase and the rotation speed.

Abstract: The present invention provides a Group III nitride semiconductor light-emitting device exhibiting improved emission performance and high electrostatic breakdown voltage. The Group III nitride semiconductor light-emitting device has a layered structure in which an n-type contact layer, an ESD layer, an n-type cladding layer, a light-emitting layer, a p-type cladding layer, and a p-type contact layer are deposited on a sapphire substrate. The ESD layer has a pit. The n-type cladding layer and the light-emitting layer are formed without burying the pit. The pit has a diameter of 110 nm to 150 nm at an interface between the n-type cladding layer and the light-emitting layer. The barrier layer of the light-emitting layer is formed of AlGaN having an Al composition ratio of 3% to 7%.

Abstract: An MQW-structure light-emitting layer is formed by alternately stacking InGaN well layers and AlGaN barrier layers. Each well layer and each barrier layer are formed so as to satisfy the following relations: 12.9??2.8x+100y?37 and 0.65?y?0.86, or to satisfy the following relations: 162.9?7.1x+10z?216.1 and 3.1?z?9.2, here x represents the Al compositional ratio (mol %) of the barrier layer, and y represents the difference in bandgap energy (eV) between the barrier layer and the well layer, and z represents the In compositional ratio (mol %) of the well layer.

Abstract: Disclosed is a polymer film excellent in performance of inducing Rth.

Abstract: Provided is a fluid joint having a first coupler that includes a cylindrical first main body and an outer cylinder located at the outer circumferential side of the first main body, which protrudes to a distal end of the first main body, and is provided with a first engagement portion and a second engagement portion at the distal end, wherein the second coupler includes a second main body provided with a third engagement portion that can engage with the first engagement portion and a fourth engagement portion that can engage with the second engagement portion; and wherein the phases of the first engagement portion and the third engagement portion match in the process of engagement thereof, so that the second engagement portion and the fourth engagement portion engage with each other to join the outer cylinder and the second main body together.

Abstract: Disclosed is a laminate film comprising an inner layer formed of a composition comprising a polymer material as a main component and an outer layer formed of a composition comprising a polymer material as a main component and laminated on at least one surface of the inner layer, wherein a film thickness of the outer layer differs depending upon a position in the width direction of the laminate film.

Abstract: An image forming apparatus includes an image bearing member; a charging device, including a rotatable magnetic particle carrying member and electroconductive magnetic particles carried on the rotatable magnetic particle carrying member, for charging the image bearing member by contacting the magnetic particles to the image bearing member; a measuring device for measuring magnitudes of a first force in a first direction and a second force in a second direction which are produced in a contact region between the image bearing member and the magnetic particles, wherein the first direction and second direction are independent from each other; and a control device for controlling an image forming operation on the basis of the forces measured by the measuring device.

Abstract: An electric motor control apparatus capable of controlling a motor normally regardless of failures is obtained without increased cost. The apparatus includes a position sensor failure determination unit which outputs a failure determination signal, and generates a first phase; a motor rotation speed calculator which operates based on the failure determination signal and position sensor signals; a phase command generator producing a phase command based on the first phase, the failure determination signal and rotation speed; an amplitude command generator that generates an amplitude command indicating magnitude of a driving signal for the motor, and an electrical energization unit that applies the driving signal to the motor based on the phase command and the amplitude command. Upon failure of a position sensor, the phase command generator generates the phase command using the first phase, and a second phase obtained based on the first phase and the rotation speed.

Abstract: The present invention provides a Group III nitride semiconductor light-emitting device exhibiting improved emission performance and high electrostatic breakdown voltage. The Group III nitride semiconductor light-emitting device has a layered structure in which an n-type contact layer, an ESD layer, an n-type cladding layer, a light-emitting layer, a p-type cladding layer, and a p-type contact layer are deposited on a sapphire substrate. The ESD layer has a pit. The n-type cladding layer and the light-emitting layer are formed without burying the pit. The pit has a diameter of 110 nm to 150 nm at an interface between the n-type cladding layer and the light-emitting layer. The barrier layer of the light-emitting layer is formed of AlGaN having an Al composition ratio of 3% to 7%.

Abstract: The method of manufacturing the semiconductor device that includes a high voltage MOS transistor with high operating voltage under both high and low gate voltages with low-cost is disclosed. When manufacturing the high voltage MOS transistor, a portion of a gate insulation film is removed to form an opening that exposes an outside area of the active area, which is outside of the central area where a gate electrode will be formed. A shallow grade layer is formed by implanting impurities into an opening with an energy that does not permit penetration of impurity ions through the gate insulation film.

Abstract: A polymer film, containing a merocyanine compound having ?max of not longer than 375 nm, and a compound represented by formula (II), which is different from said at least one merocyanine compound, is disclosed. In the formula, R1 and R2 each independently represent a hydrogen atom, alkyl group, aryl group, heterocyclic group, cyano, N-alkyl- or N-aryl carbamoyl group, aryloxy carbonyl group or —CH2COOR5, or R1 and R2 bind to each other to form a ring containing a nitrogen atom; R5 represents an alkyl group, aryl group or a heterocyclic group; R3 and R4 each independently represent a substituent having a Hammett substituent constant ?p of equal to or more than 0.2, or R3 and R4 bind to each other to form a cyclic active methylene compound structure.

Abstract: A packet forwarding apparatus for connecting a plurality of user terminals to an ISP management server has a management table indicating the relationship between a connection port identifier and specific header information in association with the MAC address of each of the user terminals so that, in a communication protocol procedure executed between each of the user terminals and the ISP management server prior to communication with a wide-area network, the packet forwarding apparatus discards a packet for the user terminal when it is determined that the specific header information cannot be assigned to the user terminal based on the management table.

Abstract: A method of making a group III nitride-based compound semiconductor includes providing a semiconductor substrate comprising group III nitride-based compound semiconductor, polishing a surface of said semiconductor substrate such that said polished surface includes an inclined surface that has an off-angle ? of 0.15 degrees or more and 0.6 degrees or less to one of an a-face, a c-face and an m-face of the semiconductor substrate, providing a stripe-shaped specific region on the polished surface, the specific region comprising a material that prevents the growth of the group III nitride-based compound semiconductor on its surface, and growing a semiconductor epitaxial growth layer of group III nitride-based compound semiconductor on the polished surface of the semiconductor substrate.

Abstract: The invention relates to a polarizing plate comprising at least a polarizing layer having a K value as defined by the following expression of from 0.25 to 0.75; K=(kx?kz)/(kx?ky) wherein axes which are orthogonal to each other in a plane of the polarizing layer are an x-axis and a y-axis; an axis which is orthogonal to an x-y axis plane is a z-axis; and kx, ky and kz are an absorption coefficient along the x-axis, y-axis and z-axis directions, respectively.