Abstract: A light emitting device includes a stacked body including at least a light emitting layer made of Inx(AlyGa1-y)1-xP(0?x?1, 0?y?1), a p-type cladding layer made of Inx(AlyGa1-y)1-xP (0?x?1, 0?y?1), and a bonding layer made of a semiconductor; and a substrate in which deviation in a lattice constant at a bonding interface with the bonding layer is larger than deviation in lattice constants between the light emitting layer and the bonding layer. The p-type cladding layer is located more distant from the bonding interface than the light emitting layer, and the p-type cladding layer has a carrier concentration of 0.5×1017 cm?3 or more and 3×1017 cm?3 or less.

Abstract: A method for producing a light-emitting device, includes: performing, on a first substrate made of III-V group compound semiconductor, crystal growth of a laminated body including an etching easy layer contiguous to the first substrate and a light-emitting layer made of nitride semiconductor; bonding a second substrate and the laminated body; and detaching the second substrate provided with the light-emitting layer from the first substrate by, one of removing the etching easy layer by using a solution etching method, and removing the first substrate and the etching easy layer by using mechanical polishing method.

Abstract: A semiconductor light emitting device includes: an upper growth layer including a light emitting layer; a transparent substrate through which a radiant light from the light emitting layer passes; and a foundation layer provided between the upper growth layer and the transparent substrate, the foundation layer having a surface-controlling layer and a bonding layer bonded with the transparent substrate. The surface-controlling layer is made of compound semiconductor including at least Ga and As. The upper growth layer is formed on an upper surface of the surface-controlling layer. A lattice constant difference at an interface between the surface-controlling layer and the upper growth layer is smaller than that at an interface between the bonding layer and the transparent substrate.

Abstract: A method for producing a light-emitting device, includes: performing, on a first substrate made of III-V group compound semiconductor, crystal growth of a laminated body including an etching easy layer contiguous to the first substrate and a light-emitting layer made of nitride semiconductor; bonding a second substrate and the laminated body; and detaching the second substrate provided with the light-emitting layer from the first substrate by, one of removing the etching easy layer by using a solution etching method, and removing the first substrate and the etching easy layer by using mechanical polishing method.

Abstract: A light emitting device includes a stacked body including at least a light emitting layer made of Inx(AlyGa1-y)1-xP(0?x?1, 0?y?1), a p-type cladding layer made of Inx(AlyGa1-y)1-xP (0?x?1, 0?y?1), and a bonding layer made of a semiconductor; and a substrate in which deviation in a lattice constant at a bonding interface with the bonding layer is larger than deviation in lattice constants between the light emitting layer and the bonding layer. The p-type cladding layer is located more distant from the bonding interface than the light emitting layer, and the p-type cladding layer has a carrier concentration of 0.5×1017 cm?3 or more and 3×1017 cm?3 or less.

Abstract: A method for manufacturing a light emitting device, includes: forming a first multilayer body including a first substrate, a first semiconductor layer provided on the first substrate and having a light emitting layer, and a first metal layer provided on the first semiconductor layer; forming a second multilayer body including a second substrate having a thermal expansion coefficient different from a thermal expansion coefficient of the first substrate, and a second metal layer provided on the second substrate; a first bonding step configured to heat the first metal layer and the second metal layer being in contact with each other; removing the first substrate after the first bonding step; and a second bonding step configured to perform, after the removing, heating at a temperature higher than a temperature of the first bonding step.

Abstract: A method for producing a light-emitting device, includes: performing, on a first substrate made of III-V group compound semiconductor, crystal growth of a laminated body including an etching easy layer contiguous to the first substrate and a light-emitting layer made of nitride semiconductor; bonding a second substrate and the laminated body; and detaching the second substrate provided with the light-emitting layer from the first substrate by, one of removing the etching easy layer by using a solution etching method, and removing the first substrate and the etching easy layer by using mechanical polishing method.

Abstract: A light emitting device includes a stacked body including at least a light emitting layer made of Inx(AlyGa1-y)1-xP (0?x?1, 0?y?1), a p-type cladding layer made of Inx(AlyGa1-y)1-xP (0?x?1, 0?y?1), and a bonding layer made of a semiconductor; and a substrate in which deviation in a lattice constant at a bonding interface with the bonding layer is larger than deviation in lattice constants between the light emitting layer and the bonding layer. The p-type cladding layer is located more distant from the bonding interface than the light emitting layer, and the p-type cladding layer has a carrier concentration of 0.5×1017 cm?3 or more and 3×1017 cm?3 or less.

Abstract: A method for producing a light-emitting device, includes: performing, on a first substrate made of III-V group compound semiconductor, crystal growth of a laminated body including an etching easy layer contiguous to the first substrate and a light-emitting layer made of nitride semiconductor; bonding a second substrate and the laminated body; and detaching the second substrate provided with the light-emitting layer from the first substrate by, one of removing the etching easy layer by using a solution etching method, and removing the first substrate and the etching easy layer by using mechanical polishing method.

Abstract: A method for manufacturing a light emitting device, includes: forming a first multilayer body including a first substrate, a first semiconductor layer provided on the first substrate and having a light emitting layer, and a first metal layer provided on the first semiconductor layer; forming a second multilayer body including a second substrate having a thermal expansion coefficient different from a thermal expansion coefficient of the first substrate, and a second metal layer provided on the second substrate; a first bonding step configured to heat the first metal layer and the second metal layer being in contact with each other; removing the first substrate after the first bonding step; and a second bonding step configured to perform, after the removing, heating at a temperature higher than a temperature of the first bonding step.

Abstract: A method for producing a light-emitting device, includes: performing, on a first substrate made of III-V group compound semiconductor, crystal growth of a laminated body including an etching easy layer contiguous to the first substrate and a light-emitting layer made of nitride semiconductor; bonding a second substrate and the laminated body; and detaching the second substrate provided with the light-emitting layer from the first substrate by, one of removing the etching easy layer by using a solution etching method, and removing the first substrate and the etching easy layer by using mechanical polishing method.

Abstract: A method for manufacturing a light emitting device, includes: forming a first multilayer body including a first substrate, a first semiconductor layer provided on the first substrate and having a light emitting layer, and a first metal layer provided on the first semiconductor layer; forming a second multilayer body including a second substrate having a thermal expansion coefficient different from a thermal expansion coefficient of the first substrate, and a second metal layer provided on the second substrate; a first bonding step configured to heat the first metal layer and the second metal layer being in contact with each other; removing the first substrate after the first bonding step; and a second bonding step configured to perform, after the removing, heating at a temperature higher than a temperature of the first bonding step.

Abstract: A light emitting device includes a stacked body including at least a light emitting layer made of Inx(AlyGa1-y)1-xP (0?x?1, 0?y?1), a p-type cladding layer made of Inx(AlyGa1-y)1-xP (0?x?1, 0?y?1), and a bonding layer made of a semiconductor; and a substrate in which deviation in a lattice constant at a bonding interface with the bonding layer is larger than deviation in lattice constants between the light emitting layer and the bonding layer. The p-type cladding layer is located more distant from the bonding interface than the light emitting layer, and the p-type cladding layer has a carrier concentration of 0.5×1017 cm?3 or more and 3×1017 cm?3 or less.

Abstract: A semiconductor light emitting device includes: an upper growth layer including a light emitting layer; a transparent substrate through which a radiant light from the light emitting layer passes; and a foundation layer provided between the upper growth layer and the transparent substrate, the foundation layer having a surface-controlling layer and a bonding layer bonded with the transparent substrate. The surface-controlling layer is made of compound semiconductor including at least Ga and As. The upper growth layer is formed on an upper surface of the surface-controlling layer. A lattice constant difference at an interface between the surface-controlling layer and the upper growth layer is smaller than that at an interface between the bonding layer and the transparent substrate.

Abstract: A method for producing a light-emitting device, includes: performing, on a first substrate made of III-V group compound semiconductor, crystal growth of a laminated body including an etching easy layer contiguous to the first substrate and a light-emitting layer made of nitride semiconductor; bonding a second substrate and the laminated body; and detaching the second substrate provided with the light-emitting layer from the first substrate by, one of removing the etching easy layer by using a solution etching method, and removing the first substrate and the etching easy layer by using mechanical polishing method.

Abstract: In one aspect, a semiconductor element may include a first substrate made of a N-type ZnO substrate, a P-type semiconductor layer provided on the first substrate, the P-type semiconductor layer having a nitride-based semiconductor, a lamination member provided on the P-type semiconductor layer, lamination member having a nitride-based semiconductor, and a N-type semiconductor layer in the uppermost layer, a first electrode provided on the lamination member, and a second electrode provided on the first substrate.

Abstract: In a self-propelled cleaner 10, after distance data from an ultrasonic ranging-sensor 31 is obtained, a judgment is made as to whether the distance data is below an approaching limit value. If the distance data is below the approaching limit value, travel of a body is stopped. If the distance data is not the approaching limit value, distance data from light ranging-sensors 32R, 32L are obtained. If distance data is below the approaching limit value, and the travel of the body is stopped, so that even if a target is a target which can not be subjected to precise ranging by the ultrasonic ranging-sensor only, it can be subjected to the precise ranging by using the light ranging-sensors. Thus it is possible to increase the number of targets capable of being subjected to the precise ranging and prevent the body from colliding against the obstacle.

Abstract: Disclosed is a monitoring device and a self-propelled cleaner including the monitoring device, that track a moving body securely and stably. Within the monitoring device 9, presence of the moving body is detected by a moving body detecting section according to image data imaged by an imaging device 52 as an imaging section. When it is detected, its position is identified by a moving body position identification section, and an area in which the moving body is positioned is determined by an area determining section, within dividing an imaging region concerning the obtained image data into three areas of area A, area B, area C. The imaging device 52 is rotated so that a center line (one among Ca, Cb, Cc) overlaps with position of the moving body. Here, the center line is orthogonal to horizontal direction of the area, where moving body is positioned.

Abstract: An autonomous cleaner that can be operated with a remote controller without using a dedicated component such as an antenna that receives a signal from the remote controller is provided. The cleaner main body 1 includes eight infrared sensors 11 for detecting obstacles such as furniture. The remote controller 3 outputs an infrared signal corresponding to the pushed key 31. The reflected light from the obstacle and the infrared signal (remote controller signal) from the remote controller are both received at the infrared sensor 11. The light receiving part of the infrared sensor 11 has a function of receiving the signal by the reflected light from the obstacle and receiving the remote controller signal, which signals are identifiable at a micro-computer 22. The cleaner main body 1 can thus be operated with a remote controller 3 using the infrared sensor 11 without arranging a dedicated component such as an antenna.

Abstract: A security device provided with a human body detecting unit for detecting a man to monitor an intruder from the outside, includes: a direction specifying unit for specifying the direction in which the man detected by the human body detecting unit accesses; a direction determining unit for determining whether or not the direction specified by the direction specifying unit agrees a preset direction; and a reporting unit for making a report if the direction determining unit determines that the direction specified by the direction specifying unit does not agree with the preset direction.