Abstract: A security device provided with a human body detecting unit for detecting a man to monitor an intruder from the outside, includes: a direction specifying unit for specifying the direction in which the man detected by the human body detecting unit accesses; a direction determining unit for determining whether or not the direction specified by the direction specifying unit agrees a preset direction; and a reporting unit for making a report if the direction determining unit determines that the direction specified by the direction specifying unit does not agree with the preset direction.

Abstract: A self-propelled cleaner that can travel accurately along a wall edge and preferably remove dust in the wall edge is provided. Since the self-propelled cleaner is configured in a way that direction correction in two steps is performed, that is, a direction of a body BD is corrected to be perpendicular to the from obstacle (wall W) using ultrasonic sensors 31 (31a to 31c), and the body BD is turned by 90 degrees in that condition, and then the direction of the body BD is corrected to be parallel to the obstacle (wall W) using lateral wall sensors 36 (36FR, 36FL, 36RR and 36RL), the body can be accurately parallel to the wall, can be accurately travel along the wall edge.

Abstract: It is an object to provide a rechargeable traveling system that can smoothly carry out the automatic charging. Because the position of a sidewall sensor 36 is set to satisfy the equation a=(1/2)b, when a body BD is parallel to wall W, for distance (a) between the line extending perpendicular to the wall W from pivot point C and the sidewall sensor 36 and for width (b) of a feeding section 102 of a charging unit 100, subsequently when the body BD is rotated so that a charging terminal 27a placed in the rear center of the body BD and a feeding terminal 102a of the charging unit 100 face each other, the charging terminal 27a and the feeding terminal 102a face each other without any displacement.

Abstract: Disclosed is a self-propelled cleaner that can reduce power consumption and that is economically advantageous. The self-propelled cleaner normally detects an intruder using pyroelectric sensors that consume less power, and each time a predetermined period of time has passed, detects an intruder with the infrared CCD sensor while turning the body BD. This can reduce the time of operation during which the infrared CCD sensor consuming more power is used, thus making it possible to reduce power consumption. Moreover, since the self-propelled cleaner is designed to cause the drive mechanism provided therein to turn the body BD, it is not necessary to additionally provide a device to turn the infrared CCD sensor, thus reducing the manufacturing cost.

Abstract: An acceleration sensor is disposed on the center line of a main body to sense and output to a determination processing unit the acceleration component in three axial directions orthogonal to each other. The determination processing unit has a predetermined threshold value set for the acceleration in the z axis direction to determine the overturning possibility of the main body by the tilt angle of the main body exceeding a certain critical angle when falling short of the threshold value. The determination processing unit controls the travel steering unit so as to effect an obviation operation (for example, moving back the main body a predetermined distance and rotating the main body) to decrease the tilt angle of the main body, i.e. to increase the acceleration in the z axis directions. Thus, the main body is prevented from turning over.

Abstract: A main body of a self-running cleaner conducts a cleaning job while self-propelling at a velocity vector in the direction of the arrow. A person approaches with a movement vector in the direction of the arrow in front of the main body. A determination processing unit of the main body rotates the main body such that the velocity vector of the main body is orthogonal to the movement vector of the person when determination is made of the possibility of collision between the obstacle and the main body from a calculated result (rotation A). Then, the main body is moved straight ahead a predetermined distance in the direction of travel after the rotation.

Abstract: A passive sensor is provided in a forward direction of a main body of a self-traveling vacuum cleaner. The passive sensor receives a reflected light of an external light of a target object at a length within a certain length range at a predetermined angle of visibility, and measures the length to a target object based on a phase difference of the received reflected light of the target object. The passive sensor includes a predetermined detectable length, and also includes an obstacle detection range of a predetermined area relative to the forward direction. The passive sensor has a long detectable length and an extremely wide angle of visibility, as compared with an active sensor. It is, therefore, possible to ensure a wider obstacle detection range than the active sensor, using the single passive sensor.

Abstract: A semiconductor light-emitting device, including a first substrate of a first conductivity type, a first bonding layer provided on the first substrate and consisting essentially of a GaP material of the first conductivity type, a second bonding layer provided on the first bonding layer, coincident with the first bonding layer in the planar direction of the crystal, having the first conductivity type, and consisting essentially of a material represented by a formula InxGayP, where 0?x, y?1, and x+y=1, and a light-emitting layer comprising a first cladding layer, an active layer, and a second cladding layer, which are successively provided on the second bonding layer, each of the active layer and first and second cladding layers consisting essentially of a material represented by a formula InxGayAlzP, where x+y+z=1, and 0?x, y, z?1.

Abstract: A semiconductor light-emitting device, including a first substrate of a first conductivity type, a first bonding layer provided on the first substrate and consisting essentially of a GaP material of the first conductivity type, a second bonding layer provided on the first bonding layer, coincident with the first bonding layer in the planar direction of the crystal, having the first conductivity type, and consisting essentially of a material represented by a formula InxGayP, where 0≦x, y≦1, and x+y=1, and a light-emitting layer comprising a first cladding layer, an active layer, and a second cladding layer, which are successively provided on the second bonding layer, each of the active layer and first and second cladding layers consisting essentially of a material represented by a formula InxGayAlzP, where x+y+z=1, and 0≦x, y, z≦1.

Abstract: A semiconductor light-emitting device, including a first substrate of a first conductivity type, a first bonding layer provided on said first substrate and consisting essentially of a GaP material of the first conductivity type, a second bonding layer provided on the first bonding layer, coincident with the first bonding layer in a crystal orientation, having the first conductivity type, and consisting essentially of a material represented by a formula InxGayP, where 0≦x, y≦1, and x+y=1, and a light-emitting layer comprising a first cladding layer, an active layer, and a second cladding layer, which are successively provided on the second bonding layer, each of the active layer and first and second cladding layers consisting essentially of a material represented by a formula InxGayAlzP, where x+y+z=1, and 0≦x, y, z≦1.

Abstract: A semiconductor light emitting element is proposed that improves a light extraction efficiency without requiring any complicated processes and techniques. The semiconductor light emitting element includes an active layer for emitting first light by current injection, and a light absorbing and emitting section for absorbing a part of the first light and for emitting second light having a greater peak wavelength than the first light. A difference in peak wavelength between the first light and the second light is in a range in which a spectrum of a mixture of the first and second light maintains a unimodal characteristic or is smaller than 0.9 times a half width of the spectrum of the first light.

Abstract: A semiconductor light emitting device has a substrate made of a semiconductor of a first conductivity-type, a first light reflecting layer made of a semiconductor of the first conductivity-type and provided on a main surface of the substrate, an active layer made of a semiconductor including InGaAlP and provided on the first reflecting layer, a second light reflecting layer made of a semiconductor of a second conductivity-type and provided on the active layer, a current blocking layer having an opening, only through the opening a current flowing into the active layer, a transparent electrode provided on the second light reflecting layer, a front surface electrode provided on the transparent electrode and having an opening through which emission from the active layer is extracted; and a rear surface electrode provided on a rear surface of the substrate.

Abstract: A semiconductor light emitting element is proposed that improves a light extraction efficiency without requiring any complicated processes and techniques. The semiconductor light emitting element includes an active layer for emitting first light by current injection, and a light absorbing and emitting section for absorbing a part of the first light and for emitting second light having a greater peak wavelength than the first light. A difference in peak wavelength between the first light and the second light is in a range in which a spectrum of a mixture of the first and second light maintains a unimodal characteristic or is smaller than 0.9 times a half width of the spectrum of the first light.

Abstract: A semiconductor light-emitting device, including a first substrate of a first conductivity type, a first bonding layer provided on the first substrate and consisting essentially of a GaP material of the first conductivity type, a second bonding layer provided on the first bonding layer, coincident with the first bonding layer in the planar direction of the crystal, having the first conductivity type, and consisting essentially of a material represented by a formula InxGayP, where 0≦x, y≦1, and x+y=1, and a light-emitting layer comprising a first cladding layer, an active layer, and a second cladding layer, which are successively provided on the second bonding layer, each of the active layer and first and second cladding layers consisting essentially of a material represented by a formula InxGayAlzP, where x+y+z=1, and 0≦x, y, z≦1.

Abstract: In a semiconductor light emitting element using InGaAlP semiconductors, reduced in operative voltage and increased in optical output, a contact layer doped with a predetermined amount of carbon is provided to reduce the contact resistance at the contact with an ITO electrode because carbon does not readily diffuse like zinc and does not deteriorate the element characteristics. An intermediate band gap layer having an intermediate band gap between those of a contact layer and a cladding layer may be interposed between these layers to alleviate band discontinuity between their valence bands, thereby promote inflow of holes and decrease the element resistance.

Abstract: A semiconductor light emitting device has a substrate made of a semiconductor of a first conductivity-type, a first light reflecting layer made of a semiconductor of the first conductivity-type and provided on a main surface of the substrate, an active layer made of a semiconductor including InGaAlP and provided on the first reflecting layer, a second light reflecting layer made of a semiconductor of a second conductivity-type and provided on the active layer, a current blocking layer having an opening, only through the opening a current flowing into the active layer, a transparent electrode provided on the second light reflecting layer, a front surface electrode provided on the transparent electrode and having an opening through which emission from the active layer is extracted; and a rear surface electrode provided on a rear surface of the substrate.

Abstract: A semiconductor light emitting device has a double heterostructure. The device is composed of an active layer and clad layers that sandwich the active layer. At least one of the clad layers has a multilayer structure having at least two element layers. The Al mole fraction of an element layer, which is proximal to the active layer, of the multilayer structure is smaller than that of the other element layer thereof distal from the active layer. This arrangement improves the crystal quality of an interface between the active layer and the clad layer of multilayer structure and effectively confines carriers in the active layer.

Abstract: A current blocking layer (7) formed immediately below a transparent electrode (9) is formed of a semiconductor layer containing Al, and a bandgap equal to or longer than the emission wavelength. Since the current blocking layer (7) is formed of such semiconductor layer, an oxide film forms on or near the surface of the current blocking layer (7) in a process of forming the transparent electrode (9) such as an ITO film containing oxygen, and the current blocking layer functions effectively. The diameter of a bonding electrode (20) is set to be smaller than that of the current blocking layer (7), thus effectively outputting the light emitted. Furthermore, the oxidized current blocking layer can have a high breakdown voltage and, hence, can be formed to have a small thickness, thus improving step coverage upon forming the transparent electrode on the current blocking layer. By inserting a thin Zn layer (8) between the transparent electrode (9) and an ohmic layer (6), the adhesion therebetween can be improved.

Abstract: A semiconductor light emitting device has a double heterostructure. The device is composed of an active layer and clad layers that sandwich the active layer. At least one of the clad layers has a multilayer structure having at least two element layers. The Al mole fraction of an element layer, which is proximal to the active layer, of the multilayer structure is smaller than that of the other element layer thereof distal from the active layer. This arrangement improves the crystal quality of an interface between the active layer and the clad layer of multilayer structure and effectively confines carriers in the active layer.

Abstract: A semi-conductor light-emitting device has a substrate, an active layer formed on the substrate for emitting light when an electric current is supplied, a current spreading layer formed on the active layer for spreading an electric current, a light-outputting layer formed on the current spreading layer, and electrodes provided on the semiconductor substrate and the light emitting layer for providing electric current to the active layer. In the device, the current spreading layer is formed of zinc telluride (ZnTe).