Abstract: An electrochemical device has an electrochemical cell provided with an electrolyte having proton conductivity, an anode provided on one side of the electrolyte, and a cathode provided on the other side of the electrolyte. The electrochemical device is configured so that a solution containing water, an artificial synthetic resin, and an acid is supplied to the anode. The electrochemical device is configured so that an oxygen-containing gas is supplied to the cathode and connecting a load between the anode and the cathode. The electrochemical device is configured so that the inert gas is supplied to the cathode and connecting the voltage application unit between the anode and the cathode.

Abstract: A joint that is coupled to a cylindrical fluid discharger whose peripheral edge expands radially outward. The joint includes a cylindrical coupler that is coupled to the fluid discharger and has a male screw on an outer peripheral surface thereof, an engager that engages with the peripheral edge, and a tubular body that has a female screw to be coupled to the male screw on an inner peripheral surface thereof, and switches between a first state in which the attachment and the detachment of the fluid discharger and the joint are allowed and a second state in which the attachment and the detachment of the fluid discharger and the joint are restricted.

Abstract: A peeling apparatus includes: an ingot holding unit holding an ingot with an ingot portion corresponding to a wafer being faced up; an ultrasonic wave oscillating unit which has an end face facing the ingot portion corresponding to the wafer and oscillates an ultrasonic wave; a water supplying unit supplying water to an area between the ingot portion corresponding to the wafer and the end face of the ultrasonic wave oscillating unit; and a peeling unit that holds the ingot portion corresponding to the wafer with suction and peels off the wafer from the ingot.

Abstract: A wafer manufacturing apparatus includes an ingot grinding unit for grinding an upper surface of an ingot to planarize the upper surface of the ingot, a laser applying unit for forming peel-off layers in the ingot at a depth therein, which corresponds to the thickness of a wafer to be produced from the ingot, from the upper surface of the ingot, a wafer peeling unit for holding the upper surface of the ingot and peeling off a wafer from the ingot at the peel-off layers, a tray having an ingot support portion and a wafer support portion, and a belt conveyor unit for delivering the ingot supported on the tray between the ingot grinding unit, the laser applying unit, and the wafer peeling unit.

Abstract: A wafer producing apparatus detects a facet area from an upper surface of an SiC ingot, sets X and Y coordinates of plural points lying on a boundary between the facet area and a nonfacet area in an XY plane, and sets a focal point of a laser beam having a transmission wavelength to SiC inside the SiC ingot at a predetermined depth from the upper surface of the SiC ingot. The predetermined depth corresponds to the thickness of the SiC wafer to be produced. A control unit increases the energy of the laser beam and raises a position of the focal point in applying the laser beam to the facet area as compared with the energy of the laser beam and a position of the focal point in applying the laser beam to the nonfacet area, according to the X and Y coordinates.

Abstract: A wafer forming apparatus includes a conveying tray having an ingot accommodating section that accommodates a semiconductor ingot and a wafer accommodating section that accommodates a wafer formed from the semiconductor ingot, a belt conveyor unit that conveys the conveying tray to each processing apparatus, a cassette rack on which cassettes accommodating the wafers are placed correspondingly to the conveying trays, and a transferring unit that transfers the wafer from the wafer accommodating section of the conveying tray to the cassette placed on the cassette rack. The conveying tray is provided with an identification mark. The cassette rack or the cassette corresponding to the conveying tray is provided with the same identification mark as the identification mark provided on the conveying tray.

Abstract: An exercise support device includes a motion sensor that is worn on a user's body and outputs data regarding the motion status of the user's body when the user is performing a moving exercise, and a control section which acquires exercise information regarding the user's exercise status. The control section selects a specific exercise index having relatively strong correlation with a moving speed from exercise indexes acquired from the data outputted when the user moves on a movement section plural times at moving speeds different from each other, acquires a coefficient that is used in an approximate expression which represents the specific exercise index and is a linear function including the moving speed as a variable and the coefficient, and acquires the exercise information based on the specific exercise index and the coefficient when the user moves by the moving exercise.

Abstract: A wafer producing method includes a facet area detecting step of detecting a facet area from an upper surface of an SiC ingot, a coordinates setting step of setting the X and Y coordinates of plural points lying on the boundary between the facet area and a nonfacet area in an XY plane, and a feeding step of setting a focal point of a laser beam having a transmission wavelength to SiC inside the SiC ingot at a predetermined depth from the upper surface of the SiC ingot, the predetermined depth corresponding to the thickness of the SiC wafer to be produced, next applying the laser beam from a focusing unit in a laser processing apparatus to the SiC ingot, and relatively moving the SiC ingot and the focal point in an X direction parallel to the X axis in the XY plane, thereby forming a belt-shaped separation layer extending in the X direction inside the SiC ingot.

Abstract: An on-off valve includes a valve body housed in a valve body housing portion provided in a main body, the valve body being switchable between an open position and a closed position, an operating means that switch the valve body between the open position and the closed position, a discharge channel, one end of the discharge channel being communicated with a valve chamber of the main body, another end of the discharge channel being communicated with a discharge port, an attaching member inserted into the main body and protruding to a container side of the main body, and including a connection portion at a distal end of the attaching member, the connection portion being connected to a container discharge portion, and an insertion portion provided in the main body, the attaching member rotatably penetrating through the insertion portion, the insertion portion being communicated with the valve body housing portion.

Abstract: A wafer forming apparatus includes a conveying tray having an ingot accommodating section that accommodates a semiconductor ingot and a wafer accommodating section that accommodates a wafer formed from the semiconductor ingot, a belt conveyor unit that conveys the conveying tray to each processing apparatus, a cassette rack on which cassettes accommodating the wafers are placed correspondingly to the conveying trays, and a transferring unit that transfers the wafer from the wafer accommodating section of the conveying tray to the cassette placed on the cassette rack. The conveying tray is provided with an identification mark. The cassette rack or the cassette corresponding to the conveying tray is provided with the same identification mark as the identification mark provided on the conveying tray.

Abstract: A method for quality evaluation includes emitting measurement light having a wavelength of 300 nm or more and 2,000 nm or less to a cell mass and acquiring a plurality of light intensity information corresponding to each of a plurality of measuring positions in the cell mass, generating a feature amount from a variation of the acquired plurality of light intensity information, and evaluating quality of the cell mass using the generated feature amount as an index.

Abstract: A method of producing a wafer includes a peel-off layer forming step to form a peel-off layer in a hexagonal single-crystal ingot by applying a laser beam having a wavelength transmittable through the hexagonal single-crystal ingot while positioning a focal point of the laser beam in the hexagonal single-crystal ingot at a depth corresponding to the thickness of a wafer to be produced from an end face of the hexagonal single-crystal ingot, an ultrasonic wave generating step to generate ultrasonic waves from an ultrasonic wave generating unit positioned in facing relation to the wafer to be produced across a water layer interposed therebetween, thereby to break the peel-off layer, and a peel-off detecting step to detect when the wafer to be produced is peeled off the hexagonal single-crystal ingot by positioning an image capturing unit sideways of the wafer to be produced.

Abstract: An exhaust purification system of an internal combustion engine 1 comprises: a filter 29 arranged in an exhaust passage of the internal combustion engine and trapping particulate matter contained in exhaust gas, a catalyst 28 arranged in the exhaust passage at an upstream side from the filter in a direction of exhaust flow or supported on the filter, a fuel feed device 3, 35 feeding fuel to the catalyst, and a control device 80 configured to control the feed of fuel by the fuel feed device. The control device is configured to feed fuel from the fuel feed device to the catalyst so as to burn off particulate matter trapped at the filter as processing for filter regeneration, and feed liquid state fuel from the fuel feed device to the catalyst after the processing for filter regeneration.

Abstract: A lithium-ion secondary battery includes: a single cell that includes a first electrode, a separator stacked on the first electrode, and a second electrode stacked on the separator. The first electrode includes a porous body that includes at least one LLZ-based solid electrolyte of a lithium lanthanum zirconate or the lithium lanthanum zirconate doped with an atom other than a Li atom, a La atom, and a Zr atom, and has a pore, and an active material held in the pore. The separator has a relative density of 80% or more, and includes the at least one LLZ-based solid electrolyte of the lithium lanthanum zirconate or the lithium lanthanum zirconate doped with the atom other than the Li atom, the La atom, and the Zr atom, and at least one of a B atom, a P atom, or a Si atom.

Abstract: A method of producing a wafer includes forming a peel-off layer in a hexagonal single-crystal ingot by applying a laser beam having a wavelength transmittable through the ingot while positioning a focal point of the laser beam in the ingot at a depth corresponding to the thickness of a wafer to be produced from an end face of the ingot, generating ultrasonic waves from an ultrasonic wave generating unit positioned in facing relation to the wafer to be produced across a water layer interposed therebetween, thereby to break the peel-off layer, and detecting when the wafer to be produced is peeled off the ingot based on a change that is detected in the height of an upper surface of the wafer to be produced by a height detecting unit positioned above the upper surface of the wafer to be produced across the water wafer interposed therebetween.

Abstract: A method for manufacturing an SiC wafer from an SiC ingot includes a verifying step of applying a test laser beam to the SiC ingot in a predetermined area with the focal point of the test laser beam set inside the SiC ingot at a predetermined depth from the end surface of the SiC ingot. The test laser beam has a transmission wavelength to SiC, thereby forming a test separation layer inside the SiC ingot at the predetermined depth. The test separation layer has a test modified portion where SiC is decomposed into Si and C and test cracks extend from the test modified portion along a c-plane in the SiC ingot. Whether or not the test cracks have been properly formed is verified. When verifying, the power of the test laser beam is changed to set a proper power at which the test cracks are properly formed.

Abstract: Disclosed herein is an SiC wafer producing method for producing an SiC wafer from a single crystal SiC ingot. The SiC wafer producing method includes a wafer producing step of separating a part of the ingot along a separation layer as an interface. The wafer producing step includes the steps of immersing the ingot in a liquid and applying the ultrasonic wave from an ultrasonic vibrator through the liquid to the ingot, the ultrasonic wave having a frequency greater than or equal to a critical frequency close to the natural frequency of the ingot.

Abstract: A method for producing a wafer from a hexagonal single crystal ingot includes: planarizing an upper surface of the hexagonal single crystal ingot; applying a laser beam of such a wavelength as to be transmitted through the ingot, with a focal point positioned in an inside of a region not to be formed with devices of a wafer to be produced from the upper surface of the ingot which has been planarized, to form a production history; and applying a laser beam of such a wavelength as to be transmitted through the hexagonal single crystal ingot with a focal point of the laser beam positioned at a depth corresponding to a thickness of the wafer to be produced from the upper surface of the hexagonal single crystal ingot which has been planarized, to form an exfoliation layer.