Abstract: Disclosed herein is a laser processing apparatus for forming a separation layer inside an ingot by applying a laser beam to an end surface of the ingot in the condition where the focal point of the laser beam is set inside the ingot, the laser beam having a transmission wavelength to the ingot. The laser processing apparatus includes a holding unit for holding the ingot, a moving unit for moving the holding unit in a direction parallel to the end surface of the ingot held by the holding unit, a laser beam applying unit for applying the laser beam to the ingot held by the holding unit, an imaging unit for detecting the position of the ingot in the direction parallel to the end surface of the ingot, and a height detecting unit for detecting the height of the end surface of the ingot held by the holding unit.

Abstract: An electrochemical device has an electrochemical cell provided with an electrolyte having proton conductivity, an anode provided on one side of the electrolyte, and a cathode provided on the other side of the electrolyte. The electrochemical device is configured so that a solution containing water, an artificial synthetic resin, and an acid is supplied to the anode. The electrochemical device is configured so that an oxygen-containing gas is supplied to the cathode and connecting a load between the anode and the cathode. The electrochemical device is configured so that the inert gas is supplied to the cathode and connecting the voltage application unit between the anode and the cathode.

Abstract: A method for producing a wafer from a hexagonal single crystal ingot includes: planarizing an upper surface of the hexagonal single crystal ingot; applying a laser beam of such a wavelength as to be transmitted through the ingot, with a focal point positioned in an inside of a region not to be formed with devices of a wafer to be produced from the upper surface of the ingot which has been planarized, to form a production history; and applying a laser beam of such a wavelength as to be transmitted through the hexagonal single crystal ingot with a focal point of the laser beam positioned at a depth corresponding to a thickness of the wafer to be produced from the upper surface of the hexagonal single crystal ingot which has been planarized, to form an exfoliation layer.

Abstract: In an opening and closing valve of the invention, an operation dial 6 and a valve body housed in a main body 2 are connected by a rotary shaft 3, and a regulation member 4 having a first fitting hole 422 engaging with a fitter 33 in the rotary shaft 3 is disposed in a housing space 25 of the main body 2. When a second fitting hole 621 in the operation dial 6 is released from the fitter 33 in the closed state, the first fitting hole 422 is fitted into the fitter 33 to regulate the rotation, or when the second fitting hole 621 is fitted into the fitter 33, the first fitting hole 422 is released from the fitter 33 to achieve the rotation.

Abstract: An exercise support device and an exercise support method are provided by which a judgment regarding the landing of the left and right feet of a user can be accurately made with low power consumption, so that the user can appropriately grasp and judge the balance of the use of the body in an exercise. First, based on changes in acceleration in a vertical direction with respect to the ground which has been acquired by a sensor section worn on the body during a running exercise, landing timing at which one of the left and right feet is landed is detected. Then, based on whether a difference between angular velocities around a traveling direction axis immediately after the latest landing timing and the preceding landing timing has a positive or negative value, whether the landed foot is the left foot or the right foot is judged.

Abstract: A wafer producing method for producing a wafer from an ingot, the ingot being previously formed with a separation layer along which the wafer is to be separated from the ingot. The wafer producing method includes a first ultrasonic vibration applying step of applying ultrasonic vibration to a given area of the ingot at a high density to thereby form a partially broken portion where a part of the separation layer is broken, a second ultrasonic vibration applying step of applying the ultrasonic vibration to the whole area of the ingot larger than the given area at a low density, after performing the first ultrasonic vibration applying step, thereby forming a fully broken portion where the separation layer is fully broken in such a manner that breaking starts from the partially broken portion, and a separating step of separating the wafer from the ingot along the fully broken portion.

Abstract: The exhaust purification system of an internal combustion engine 1 comprises: a catalyst 28 arranged in an exhaust passage 27 of the internal combustion engine, a fuel feed device 3, 35 feeding fuel to the catalyst, and a control device 80 configured to control the feed of fuel by the fuel feed device. The control device is configured to feed liquid state fuel from the fuel feed device to the catalyst when judging that a ratio of high viscosity components in particulate matter deposited on the catalyst is a predetermined value or less.

Abstract: A wafer producing method includes a facet area detecting step of detecting a facet area from an upper surface of an SiC ingot, a coordinates setting step of setting the X and Y coordinates of plural points lying on the boundary between the facet area and a nonfacet area in an XY plane, and a feeding step of setting a focal point of a laser beam having a transmission wavelength to SiC inside the SiC ingot at a predetermined depth from the upper surface of the SiC ingot, the predetermined depth corresponding to the thickness of the SiC wafer to be produced, next applying the laser beam from a focusing unit in a laser processing apparatus to the SiC ingot, and relatively moving the SiC ingot and the focal point in an X direction parallel to the X axis in the XY plane, thereby forming a belt-shaped separation layer extending in the X direction inside the SiC ingot.

Abstract: A peeling apparatus includes an ingot holding unit holding an ingot in a hanging state where a portion of the ingot to be peeled off as the wafer is directed downwardly, a water container containing water therein, an ultrasonic unit immersed in the water in the water container, a moving unit moving the ingot holding unit vertically into a position where the ingot holding unit faces the ultrasonic unit and at least the portion of the ingot to be peeled off as the wafer is immersed in the water in the water container, and a nozzle ejecting water to the portion of the ingot to be peeled off as the wafer thereby to promote the peeling of the wafer from the ingot.

Abstract: A method of producing a wafer includes a peel-off layer forming step to form a peel-off layer in a hexagonal single-crystal ingot by applying a laser beam having a wavelength transmittable through the hexagonal single-crystal ingot while positioning a focal point of the laser beam in the hexagonal single-crystal ingot at a depth corresponding to the thickness of a wafer to be produced from an end face of the hexagonal single-crystal ingot, an ultrasonic wave generating step to generate ultrasonic waves from an ultrasonic wave generating unit positioned in facing relation to the wafer to be produced across a water layer interposed therebetween, thereby to break the peel-off layer, and a peel-off detecting step to detect when the wafer to be produced is peeled off the hexagonal single-crystal ingot by positioning an image capturing unit sideways of the wafer to be produced.

Abstract: A method of producing a wafer from a hexagonal single-crystal ingot includes the steps of planarizing an end face of the hexagonal single-crystal ingot, forming a peel-off layer in the hexagonal single-crystal ingot by applying a pulsed laser beam whose wavelength is transmittable through the hexagonal single-crystal ingot while positioning a focal point of the pulsed laser beam in the hexagonal single-crystal ingot at a depth corresponding to a thickness of a wafer to be produced from the planarized end face of the hexagonal single-crystal ingot, recording a fabrication history on the planarized end face of the hexagonal single-crystal ingot by applying a pulsed laser beam to the hexagonal single-crystal ingot while positioning a focal point of the last-mentioned pulsed laser beam in a device-free area of the wafer to be produced.

Abstract: A method of producing a wafer includes forming a peel-off layer in a hexagonal single-crystal ingot by applying a laser beam having a wavelength transmittable through the ingot while positioning a focal point of the laser beam in the ingot at a depth corresponding to the thickness of a wafer to be produced from an end face of the ingot, generating ultrasonic waves from an ultrasonic wave generating unit positioned in facing relation to the wafer to be produced across a water layer interposed therebetween, thereby to break the peel-off layer, and detecting when the wafer to be produced is peeled off the ingot based on a change that is detected in the height of an upper surface of the wafer to be produced by a height detecting unit positioned above the upper surface of the wafer to be produced across the water wafer interposed therebetween.

Abstract: An image processing apparatus includes an obtainer and an acquirer. The obtainer obtains video information including video of a measurement target and a visible light signal that includes a measurement time and measurement information of the measurement target measured by a measuring apparatus attached to the measurement target, the visible light signal being transmitted by the measuring apparatus. The acquirer acquires the measurement time and the measurement information from the visible light signal included in the video information obtained by the obtainer, and synchronizes, with respect to time, the measurement information and the video information based on the measurement time acquired.

Abstract: A wafer producing method of producing a wafer from a hexagonal single crystal ingot, the method including positioning a focal point of a laser beam of such a wavelength as to be transmitted through the hexagonal single crystal ingot at a depth corresponding to a thickness of a wafer to be produced from an end face of the hexagonal single crystal ingot and applying the laser beam to the hexagonal single crystal ingot to form a separation layer, positioning an ultrasonic wave generating unit so as to face the wafer to be produced with a layer of water interposed therebetween and generating an ultrasonic wave through the layer of water to break down the separation layer, and detecting separation of the wafer to be produced from the hexagonal single crystal ingot according to change in sound.

Abstract: A peeling apparatus includes: an ingot holding unit holding an ingot with an ingot portion corresponding to a wafer being faced up; an ultrasonic wave oscillating unit which has an end face facing the ingot portion corresponding to the wafer and oscillates an ultrasonic wave; a water supplying unit supplying water to an area between the ingot portion corresponding to the wafer and the end face of the ultrasonic wave oscillating unit; and a peeling unit that holds the ingot portion corresponding to the wafer with suction and peels off the wafer from the ingot.

Abstract: A peeling apparatus includes an ingot holding unit holding an ingot in a hanging state where a portion of the ingot to be peeled off as the wafer is directed downwardly, a water container containing water therein, an ultrasonic unit immersed in the water in the water container, a moving unit moving the ingot holding unit vertically into a position where the ingot holding unit faces the ultrasonic unit and at least the portion of the ingot to be peeled off as the wafer is immersed in the water in the water container, and a nozzle ejecting water to the portion of the ingot to be peeled off as the wafer thereby to promote the peeling of the wafer from the ingot.

Abstract: A method for producing a wafer from a hexagonal single crystal ingot includes: planarizing an upper surface of the hexagonal single crystal ingot; applying a laser beam of such a wavelength as to be transmitted through the ingot, with a focal point positioned in an inside of a region not to be formed with devices of a wafer to be produced from the upper surface of the ingot which has been planarized, to form a production history; and applying a laser beam of such a wavelength as to be transmitted through the hexagonal single crystal ingot with a focal point of the laser beam positioned at a depth corresponding to a thickness of the wafer to be produced from the upper surface of the hexagonal single crystal ingot which has been planarized, to form an exfoliation layer.

Abstract: Disclosed herein is an inspecting method for a semiconductor ingot in which modified layers parallel to an upper surface of the ingot and cracks extending from each modified layer are previously formed as a separation start point. The inspecting method includes a light applying step of applying light from a light source to the upper surface of the ingot, the light impinging on the upper surface at a predetermined incidence angle, a projected image forming step of reflecting the light on the upper surface of the ingot to obtain reflected light and then forming a projected image from the reflected light, the projected image showing the emphasis of asperities generated on the upper surface of the ingot due to the formation of the modified layers and the cracks inside the ingot, an imaging step of detecting the projected image to form a detected image, and a determining step of comparing the detected image with preset conditions to determine the condition of the modified layers and the cracks.

Abstract: Disclosed herein is an SiC wafer producing method for producing an SiC wafer from a single crystal SiC ingot. The SiC wafer producing method includes a wafer producing step of separating a part of the ingot along a separation layer as an interface. The wafer producing step includes the steps of immersing the ingot in a liquid and applying the ultrasonic wave from an ultrasonic vibrator through the liquid to the ingot, the ultrasonic wave having a frequency greater than or equal to a critical frequency close to the natural frequency of the ingot.