Abstract: Methods of forming silicon nitride thin films on a substrate in a reaction space under high pressure are provided. The methods can include a plurality of plasma enhanced atomic layer deposition (PEALD) cycles, where at least one PEALD deposition cycle comprises contacting the substrate with a nitrogen plasma at a process pressure of 20 Torr to 500 Torr within the reaction space. In some embodiments the silicon precursor is a silyl halide, such as H2SiI2. In some embodiments the processes allow for the deposition of silicon nitride films having improved properties on three dimensional structures. For example, such silicon nitride films can have a ratio of wet etch rates on the top surfaces to the sidewall of about 1:1 in dilute HF.

Abstract: Methods and precursors for forming silicon nitride films are provided. In some embodiments, silicon nitride can be deposited by atomic layer deposition (ALD), such as plasma enhanced ALD. In some embodiments, deposited silicon nitride can be treated with a plasma treatment. The plasma treatment can be a nitrogen plasma treatment. In some embodiments the silicon precursors for depositing the silicon nitride comprise an iodine ligand. The silicon nitride films may have a relatively uniform etch rate for both vertical and the horizontal portions when deposited onto three-dimensional structures such as FinFETS or other types of multiple gate FETs. In some embodiments, various silicon nitride films of the present disclosure have an etch rate of less than half the thermal oxide removal rate with diluted HF (0.5%). In some embodiments, a method for depositing silicon nitride films comprises a multi-step plasma treatment.

Abstract: Methods of forming silicon nitride thin films on a substrate in a reaction space under high pressure are provided. The methods can include a plurality of plasma enhanced atomic layer deposition (PEALD) cycles, where at least one PEALD deposition cycle comprises contacting the substrate with a nitrogen plasma at a process pressure of 20 Torr to 500 Torr within the reaction space. In some embodiments the silicon precursor is a silyly halide, such as H2SiI2. In some embodiments the processes allow for the deposition of silicon nitride films having improved properties on three dimensional structures. For example, such silicon nitride films can have a ratio of wet etch rates on the top surfaces to the sidewall of about 1:1 in dilute HF.

Abstract: Methods of forming silicon nitride thin films on a substrate in a reaction space under high pressure are provided. The methods can include a plurality of plasma enhanced atomic layer deposition (PEALD) cycles, where at least one PEALD deposition cycle comprises contacting the substrate with a nitrogen plasma at a process pressure of 20 Torr to 500 Torr within the reaction space. In some embodiments the silicon precursor is a silyly halide, such as H2SiI2. In some embodiments the processes allow for the deposition of silicon nitride films having improved properties on three dimensional structures. For example, such silicon nitride films can have a ratio of wet etch rates on the top surfaces to the sidewall of about 1:1 in dilute HF.

Abstract: A high-energy ray detector includes a detection unit in a vacuum container. The detection unit includes a first electron multiplier, a second electron multiplier, and an electron collector. Each of the first electron multiplier and the second electron multiplier has one or more MCPs each configured to emit electrons by interaction with an incident high-energy ray (?-ray, X-ray (in particular hard X-ray), or neutron ray), and multiply and output the electrons. The electron collector is transmissive for the high-energy ray. The electron collector is configured to collect the electrons multiplied and output from each of the first electron multiplier and the second electron multiplier, and output an electric pulse signal.

Abstract: Methods and precursors for forming silicon nitride films are provided. In some embodiments, silicon nitride can be deposited by atomic layer deposition (ALD), such as plasma enhanced ALD. In some embodiments, deposited silicon nitride can be treated with a plasma treatment. The plasma treatment can be a nitrogen plasma treatment. In some embodiments the silicon precursors for depositing the silicon nitride comprise an iodine ligand. The silicon nitride films may have a relatively uniform etch rate for both vertical and the horizontal portions when deposited onto three-dimensional structures such as FinFETS or other types of multiple gate FETs. In some embodiments, various silicon nitride films of the present disclosure have an etch rate of less than half the thermal oxide removal rate with diluted HF (0.5%). In some embodiments, a method for depositing silicon nitride films comprises a multi-step plasma treatment.

Abstract: A radiation position detector includes a radiator including a medium that generates Cherenkov light by interacting with an incident radiation, a photodetector including a plurality of two-dimensionally arrayed pixels, the plurality of pixels being disposed to correspond to a predetermined surface of the radiator, and a control unit that acquires position information and time information of the plurality of pixels which have detected the Cherenkov light on the basis of a signal output from the photodetector, and obtains a position of a generation place of the Cherenkov light in the radiator on the basis of the acquired position information and the acquired time information, and a propagation locus of the Cherenkov light in the radiator.

Abstract: A shower plate adapted to be installed in a plasma deposition apparatus including a gas inlet port, a shower head, a reaction chamber and an exhaust duct, the shower plate being adapted to be attached to the showerhead and having: a front surface adapted to face the gas inlet port; and a rear surface opposite to the front surface, wherein the shower plate has multiple apertures each extending from the front surface to the rear surface, and wherein the shower plate further has at least one aperture extending from the front surface side of the shower plate to the exhaust duct.

Abstract: Methods and precursors for forming silicon nitride films are provided. In some embodiments, silicon nitride can be deposited by atomic layer deposition (ALD), such as plasma enhanced ALD. In some embodiments, deposited silicon nitride can be treated with a plasma treatment. The plasma treatment can be a nitrogen plasma treatment. In some embodiments the silicon precursors for depositing the silicon nitride comprise an iodine ligand. The silicon nitride films may have a relatively uniform etch rate for both vertical and the horizontal portions when deposited onto three-dimensional structures such as FinFETS or other types of multiple gate FETs. In some embodiments, various silicon nitride films of the present disclosure have an etch rate of less than half the thermal oxide removal rate with diluted HF (0.5%). In some embodiments, a method for depositing silicon nitride films comprises a multi-step plasma treatment.

Abstract: An exhaust purification system includes an LAF sensor provided in an exhaust pipe and generates a signal corresponding to an air-fuel ratio of exhaust gas. An upstream catalytic converter is downstream of the LAF sensor and has a catalyst to purify the exhaust gas. An O2 sensor is downstream of the upstream catalytic converter, and generates a signal corresponding to the air-fuel ratio of the exhaust gas. A GPF is downstream of a the O2 sensor and purifies the exhaust gas. An ECU controls an air-fuel mixture in an engine using output signal KACT of the LAF sensor and an output signal VO2 of the O2 sensor such that the air-fuel ratio of exhaust gas flowing into the GPF converges to a target value near the stoichiometric ratio. The GPF has a filter substrate and a downstream TWC supported by a partition of the filter substrate.

Abstract: Provided is a GPF capable of exhibiting better than conventional three-way purification function. A gasoline particulate filter (GPF) that is provided in an exhaust pipe of an engine and that performs purification by capturing particulate matter (PM) in exhaust gas is provided with a filter substrate in which a plurality of cells extending from an exhaust gas inflow-side end face to an outflow-side end face are defined by porous partition walls and in which openings at the inflow-side end face and openings at the outflow-side end face of the cells are alternately sealed; and a three-way catalyst (TWC) supported by the partition wall. The three-way catalyst is the GPF comprising a catalytic metal containing at least Rh, and a composite oxide having an oxygen storage capacity and containing Nd and Pr in a crystal structure.

Abstract: A high-energy ray detector includes a detection unit in a vacuum container. The detection unit includes a first electron multiplier, a second electron multiplier, and an electron collector. Each of the first electron multiplier and the second electron multiplier has one or more MCPs each configured to emit electrons by interaction with an incident high-energy ray (?-ray, X-ray (in particular hard X-ray), or neutron ray), and multiply and output the electrons. The electron collector is transmissive for the high-energy ray. The electron collector is configured to collect the electrons multiplied and output from each of the first electron multiplier and the second electron multiplier, and output an electric pulse signal.

Abstract: Methods of forming silicon nitride thin films on a substrate in a reaction space under high pressure are provided. The methods can include a plurality of plasma enhanced atomic layer deposition (PEALD) cycles, where at least one PEALD deposition cycle comprises contacting the substrate with a nitrogen plasma at a process pressure of 20 Torr to 500 Torr within the reaction space. In some embodiments the silicon precursor is a silyly halide, such as H2SiI2. In some embodiments the processes allow for the deposition of silicon nitride films having improved properties on three dimensional structures. For example, such silicon nitride films can have a ratio of wet etch rates on the top surfaces to the sidewall of about 1:1 in dilute HF.

Abstract: Methods and precursors for forming silicon nitride films are provided. In some embodiments, silicon nitride can be deposited by atomic layer deposition (ALD), such as plasma enhanced ALD. In some embodiments, deposited silicon nitride can be treated with a plasma treatment. The plasma treatment can be a nitrogen plasma treatment. In some embodiments the silicon precursors for depositing the silicon nitride comprise an iodine ligand. The silicon nitride films may have a relatively uniform etch rate for both vertical and the horizontal portions when deposited onto three-dimensional structures such as FinFETS or other types of multiple gate FETs. In some embodiments, various silicon nitride films of the present disclosure have an etch rate of less than half the thermal oxide removal rate with diluted HF (0.5%). In some embodiments, a method for depositing silicon nitride films comprises a multi-step plasma treatment.

Abstract: Methods of forming silicon nitride thin films on a substrate in a reaction space under high pressure are provided. The methods can include a plurality of plasma enhanced atomic layer deposition (PEALD) cycles, where at least one PEALD deposition cycle comprises contacting the substrate with a nitrogen plasma at a process pressure of 20 Torr to 500 Torr within the reaction space. In some embodiments the silicon precursor is a silyl halide, such as H2SiI2. In some embodiments the processes allow for the deposition of silicon nitride films having improved properties on three dimensional structures. For example, such silicon nitride films can have a ratio of wet etch rates on the top surfaces to the sidewall of about 1:1 in dilute HF.

Abstract: An exhaust purification system includes an LAF sensor provided in an exhaust pipe and generates a signal corresponding to an air-fuel ratio of exhaust gas. An upstream catalytic converter is downstream of the LAF sensor and has a catalyst to purify the exhaust gas. An O2 sensor is downstream of the upstream catalytic converter, and generates a signal corresponding to the air-fuel ratio of the exhaust gas. A GPF is downstream of a the O2 sensor and purifies the exhaust gas. An ECU controls an air-fuel mixture in an engine using output signal KACT of the LAF sensor and an output signal VO2 of the O2 sensor such that the air-fuel ratio of exhaust gas flowing into the GPF converges to a target value near the stoichiometric ratio. The GPF has a filter substrate and a downstream TWC supported by a partition of the filter substrate.

Abstract: An exhaust purification system includes an LAF sensor provided in an exhaust pipe and generates a signal corresponding to an air-fuel ratio of exhaust gas. An upstream catalytic converter is downstream of the LAF sensor and has a catalyst to purify the exhaust gas. An O2 sensor is downstream of the upstream catalytic converter, and generates a signal corresponding to the air-fuel ratio of the exhaust gas. A GPF is downstream of a the O2 sensor and purifies the exhaust gas. An ECU controls an air-fuel mixture in an engine using output signal KACT of the LAF sensor and an output signal VO2 of the O2 sensor such that the air-fuel ratio of exhaust gas flowing into the GPF converges to a target value near the stoichiometric ratio. The GPF has a filter substrate and a downstream TWC supported by a partition of the filter substrate.

Abstract: Methods and precursors for forming silicon nitride films are provided. In some embodiments, silicon nitride can be deposited by atomic layer deposition (ALD), such as plasma enhanced ALD. In some embodiments, deposited silicon nitride can be treated with a plasma treatment. The plasma treatment can be a nitrogen plasma treatment. In some embodiments the silicon precursors for depositing the silicon nitride comprise an iodine ligand. The silicon nitride films may have a relatively uniform etch rate for both vertical and the horizontal portions when deposited onto three-dimensional structures such as FinFETS or other types of multiple gate FETs. In some embodiments, various silicon nitride films of the present disclosure have an etch rate of less than half the thermal oxide removal rate with diluted HF (0.5%). In some embodiments, a method for depositing silicon nitride films comprises a multi-step plasma treatment.

Abstract: An exhaust purification system includes an LAF sensor provided in an exhaust pipe and generates a signal corresponding to an air-fuel ratio of exhaust gas. An upstream catalytic converter is downstream of the LAF sensor and has a catalyst to purify the exhaust gas. An O2 sensor is downstream of the upstream catalytic converter, and generates a signal corresponding to the air-fuel ratio of the exhaust gas. A GPF is downstream of a the O2 sensor and purifies the exhaust gas. An ECU controls an air-fuel mixture in an engine using output signal KACT of the LAF sensor and an output signal VO2 of the O2 sensor such that the air-fuel ratio of exhaust gas flowing into the GPF converges to a target value near the stoichiometric ratio. The GPF has a filter substrate and a downstream TWC supported by a partition of the filter substrate.