Patents by Inventor Ryooji Fukuyama
Ryooji Fukuyama has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 7396481Abstract: This invention relates to a method for etching an organic insulating film used in the production of semiconductor devices. A sample to be etched on which a low dielectric constant organic insulating film is formed is etched by generating a plasma from hydrogen gas and nitrogen gas or ammonia gas, and controlling the gas flow rate and pressure so that the light emission spectral intensity ratio of hydrogen atom and cyan molecule in the plasma comes to a prescribed value. By this method, a low dielectric constant organic insulating film as an insulating film between layers can be etched without using any etch stop layer so that bottom surfaces of trenches and holes for electrical wiring become flat.Type: GrantFiled: August 23, 2005Date of Patent: July 8, 2008Assignee: Hitachi, Ltd.Inventors: Michinobu Mizumura, Ryooji Fukuyama, Yutaka Ohmoto, Katsuya Watanabe
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Publication number: 20070037292Abstract: Disclosed is apparatus for treating samples, and a method of using the apparatus. The apparatus includes processing apparatus (a) for treating the samples (e.g. plasma etching apparatus), (b) for removing residual corrosive compounds formed by the sample treatment, (c) for wet-processing of the samples and (d) for dry-processing the samples. A plurality of wet-processing treatments of a sample can be performed. The wet-processing apparatus can include a plurality of wet-processing stations. The samples can either be passed in series through the plurality of wet-processing stations, or can be passed in parallel through the wet-processing stations.Type: ApplicationFiled: October 24, 2006Publication date: February 15, 2007Inventors: Masayuki Kojima, Yoshimi Torii, Michimasa Hunabashi, Kazuyuki Suko, Takashi Yamada, Keizo Kuroiwa, Kazuo Nojiri, Yoshinao Kawasaki, Yoshiaki Sato, Ryooji Fukuyama, Hironobu Kawahara
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Patent number: 7132293Abstract: Disclosed is apparatus for treating samples, and a method of using the apparatus. The apparatus includes processing apparatus (a) for treating the samples (e.g., plasma etching apparatus), (b) for removing residual corrosive compounds formed by the sample treatment, (c) for wet-processing of the samples and (d) for dry-processing the samples. A plurality of wet-processing treatments of a sample can be performed. The wet-processing apparatus can include a plurality of wet-processing stations. The samples can either be passed in series through the plurality of wet-processing stations, or can be passed in parallel through the wet-processing stations.Type: GrantFiled: May 27, 2004Date of Patent: November 7, 2006Assignee: Hitachi, Ltd.Inventors: Yoshimi Torii, Kazuo Nojiri, Yoshinao Kawasaki, Yoshiaki Sato, Ryooji Fukuyama, Hironobu Kawahara
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Publication number: 20060065624Abstract: This invention relates to a method for etching an organic insulating film used in the production of semiconductor devices. A sample to be etched on which a low dielectric constant organic insulating film is formed is etched by generating a plasma from hydrogen gas and nitrogen gas or ammonia gas, and controlling the gas flow rate and pressure so that the light emission spectral intensity ratio of hydrogen atom and cyan molecule in the plasma comes to a prescribed value. By this method, a low dielectric constant organic insulating film as an insulating film between layers can be etched without using any etch stop layer so that bottom surfaces of trenches and holes for electrical wiring become flat.Type: ApplicationFiled: August 23, 2005Publication date: March 30, 2006Inventors: Michinobu Mizumura, Ryooji Fukuyama, Yutaka Ohmoto, Katsuya Watanabe
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Patent number: 7014787Abstract: This invention relates to a method for etching an organic insulating film used in the production of semiconductor devices. A sample to be etched on which a low dielectric constant organic insulating film is formed is etched by generating a plasma from hydrogen gas and nitrogen gas or ammonia gas, and controlling the gas flow rate and pressure so that the light emission spectral intensity ratio of hydrogen atom and cyan molecule in the plasma comes to a prescribed value. By this method, a low dielectric constant organic insulating film as an insulating film between layers can be etched without using any etch stop layer so that bottom surfaces of trenches and holes for electrical wiring become flat.Type: GrantFiled: April 1, 2004Date of Patent: March 21, 2006Assignee: Hitachi, Ltd.Inventors: Michinobu Mizumura, Ryooji Fukuyama, Yutaka Ohmoto, Katsuya Watanabe
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Patent number: 6989228Abstract: Disclosed is apparatus for treating samples, and a method of using the apparatus. The apparatus includes processing apparatus (a) for treating the samples (e.g., plasma etching apparatus), (b) for removing residual corrosive compounds formed by the sample treatment, (c) for wet-processing of the samples and (d) for dry-processing the samples. A plurality of wet-processing treatments of a sample can be performed. The wet-processing apparatus can include a plurality of wet-processing stations. The samples can either be passed in series through the plurality of wet-processing stations, or can be passed in parallel through the wet-processing stations.Type: GrantFiled: July 31, 2001Date of Patent: January 24, 2006Assignee: Hitachi, LTDInventors: Masayuki Kojima, Yoshimi Torii, Michimasa Hunabashi, Kazuyuki Suko, Takashi Yamada, Keizo Kuroiwa, Kazuo Nojiri, Yoshinao Kawasaki, Yoshiaki Sato, Ryooji Fukuyama, Hironobu Kawahara
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Publication number: 20050011612Abstract: An apparatus for etching an organic film that is capable of suppressing the amount of contaminants adhered to the etched substrate without deteriorating the etching properties or processing profile of the film, comprising disposing a ring formed of a semiconductor material on the outer circumference of a substrate to be processed, and applying a bias voltage to the ring.Type: ApplicationFiled: February 27, 2004Publication date: January 20, 2005Inventors: Mamoru Yakushiji, Yutaka Ohmoto, Ryooji Fukuyama, Katsuya Watanabe
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Publication number: 20040219687Abstract: Disclosed is apparatus for treating samples, and a method of using the apparatus. The apparatus includes processing apparatus (a) for treating the samples (e.g., plasma etching apparatus), (b) for removing residual corrosive compounds formed by the sample treatment, (c) for wet-processing of the samples and (d) for dry-processing the samples. A plurality of wet-processing treatments of a sample can be performed. The wet-processing apparatus can include a plurality of wet-processing stations. The samples can either be passed in series through the plurality of wet-processing stations, or can be passed in parallel through the wet-processing stations.Type: ApplicationFiled: May 27, 2004Publication date: November 4, 2004Inventors: Yoshimi Torii, Kazuo Nojiri, Yoshinao Kawasaki, Yoshiaki Sato, Ryooji Fukuyama, Hironobu Kawahara
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Publication number: 20040182514Abstract: This invention relates to a method for etching an organic insulating film used in the production of semiconductor devices. A sample to be etched on which a low dielectric constant organic insulating film is formed is etched by generating a plasma from hydrogen gas and nitrogen gas or ammonia gas, and controlling the gas flow rate and pressure so that the light emission spectral intensity ratio of hydrogen atom and cyan molecule in the plasma comes to a prescribed value. By this method, a low dielectric constant organic insulating film as an insulating film between layers can be etched without using any etch stop layer so that bottom surfaces of trenches and holes for electrical wiring become flat.Type: ApplicationFiled: April 1, 2004Publication date: September 23, 2004Inventors: Michinobu Mizumura, Ryooji Fukuyama, Yutaka Ohmoto, Katsuya Watanabe
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Patent number: 6793833Abstract: This invention relates to a method for etching an organic insulating film used in the production of semiconductor devices. A sample to be etched on which a low dielectric constant organic insulating film is formed and is etched by generating a plasma from hydrogen gas and nitrogen gas or ammonia gas, and controlling the gas flow rate and pressure so that the light emission spectral intensity ratio of hydrogen atom and cyan molecule in the plasma comes to a prescribed value. By this method, a low dielectric constant organic insulating film as an insulating film between layers can be etched without using any etch stop layer so that bottom surface of trenches and holes for electrical wiring become flat.Type: GrantFiled: February 25, 2002Date of Patent: September 21, 2004Assignee: Hitachi, Ltd.Inventors: Michinobu Mizumura, Ryooji Fukuyama, Yutaka Ohmoto, Katsuya Watanabe
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Patent number: 6656846Abstract: Disclosed is apparatus for treating samples, and a method of using the apparatus. The apparatus includes processing apparatus (a) for treating the samples (e.g., plasma etching apparatus), (b) for removing residual corrosive compounds formed by the sample treatment, (c) for wet-processing of the samples and (d) for dry-processing the samples. A plurality of wet-processing treatments of a sample can be performed. The wet-processing apparatus can include a plurality of wet-processing stations. The samples can either be passed in series through the plurality of wet-processing stations, or can be passed in parallel through the wet-processing stations.Type: GrantFiled: May 3, 2001Date of Patent: December 2, 2003Assignee: Hitachi, Ltd.Inventors: Masayuki Kojima, Yoshimi Torii, Michimasa Hunabashi, Kazuyuki Suko, Takashi Yamada, Keizo Kuroiwa, Kazuo Nojiri, Yoshiaki Sato, Ryooji Fukuyama, Hironobu Kawahara
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Patent number: 6537417Abstract: Disclosed is apparatus for treating samples, and a method of using the apparatus. The apparatus includes processing apparatus (a) for treating the samples (e.g., plasma etching apparatus), (b) for removing residual corrosive compounds formed by the sample treatment, (c) for wet-processing of the samples and (d) for dry-processing the samples. A plurality of wet-processing treatments of a sample can be performed. The wet-processing apparatus can include a plurality of wet-processing stations. The samples can either be passed in series through the plurality of wet-processing stations, or can be passed in parallel through the wet-processing stations.Type: GrantFiled: November 2, 2001Date of Patent: March 25, 2003Assignee: Hitachi, Ltd.Inventors: Masayuki Kojima, Yoshimi Torii, Michimasa Hunabashi, Kazuyuki Suko, Takashi Yamada, Keizo Kuroiwa, Kazuo Nojiri, Yoshinao Kawasaki, Yoshiaki Sato, Ryooji Fukuyama, Hironobu Kawahara
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Patent number: 6537415Abstract: Disclosed is apparatus for treating samples, and a method of using the apparatus. The apparatus includes processing apparatus (a) for treating the samples (e.g., plasma etching apparatus), (b) for removing residual corrosive compounds formed by the sample treatment, (c) for wet-processing of the samples and (d) for dry-processing the samples. A plurality of wet-processing treatments of a sample can be performed. The wet-processing apparatus can include a plurality of wet-processing stations. The samples can either be passed in series through the plurality of wet-processing stations, or can be passed in parallel through the wet-processing stations.Type: GrantFiled: August 31, 2001Date of Patent: March 25, 2003Assignee: Hitachi, Ltd.Inventors: Masayuki Kojima, Yoshimi Torii, Michimasa Hunabashi, Kazuyuki Suko, Takashi Yamada, Keizo Kuroiwa, Kazuo Nojiri, Yoshinao Kawasaki, Yoshiaki Sato, Ryooji Fukuyama, Hironobu Kawahara
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Publication number: 20030052086Abstract: This invention relates to a method for etching an organic insulating film used in the production of semiconductor devices.Type: ApplicationFiled: February 25, 2002Publication date: March 20, 2003Inventors: Michinobu Mizumura, Ryooji Fukuyama, Yutaka Ohmoto, Katsuya Watanabe
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Publication number: 20020043340Abstract: Disclosed is apparatus for treating samples, and a method of using the apparatus. The apparatus includes processing apparatus (a) for treating the samples (e.g., plasma etching apparatus), (b) for removing residual corrosive compounds formed by the sample treatment, (c) for wet-processing of the samples and (d) for dry-processing the samples. A plurality of wet-processing treatments of a sample can be performed. The wet-processing apparatus can include a plurality of wet-processing stations. The samples can either be passed in series through the plurality of wet-processing stations, or can be passed in parallel through the wet-processing stations.Type: ApplicationFiled: May 3, 2001Publication date: April 18, 2002Inventors: Masayuki Kojima, Yoshimi Torii, Michimasa Hunabashi, Kazuyuki Suko, Takashi Yamada, Keizo Kuroiwa, Kazuo Nojiri, Yoshinao Kawasaki, Yoshiaki Sato, Ryooji Fukuyama, Hironobu Kawahara
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Publication number: 20020043339Abstract: Disclosed is apparatus for treating samples, and a method of using the apparatus. The apparatus includes processing apparatus (a) for treating the samples (e.g., plasma etching apparatus), (b) for removing residual corrosive compounds formed by the sample treatment, (c) for wet-processing of the samples and (d) for dry-processing the samples. A plurality of wet-processing treatments of a sample can be performed. The wet-processing apparatus can include a plurality of wet-processing stations. The samples can either be passed in series through the plurality of wet-processing stations, or can be passed in parallel through the wet-processing stations.Type: ApplicationFiled: August 31, 2001Publication date: April 18, 2002Inventors: Masayuki Kojima, Yoshimi Torii, Michimasa Hunabashi, Kazuyuki Suko, Takashi Yamada, Keizo Kuroiwa, Kazuo Nojiri, Yoshinao Kawasaki, Yoshiaki Sato, Ryooji Fukuyama, Hironobu Kawahara
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Publication number: 20020023720Abstract: Disclosed is apparatus for treating samples, and a method of using the apparatus. The apparatus includes processing apparatus (a) for treating the samples (e.g., plasma etching apparatus), (b) for removing residual corrosive compounds formed by the sample treatment, (c) for wet-processing of the samples and (d) for dry-processing the samples. A plurality of wet-processing treatments of a sample can be performed. The wet-processing apparatus can include a plurality of wet-processing stations. The samples can either be passed in series through the plurality of wet-processing stations, or can be passed in parallel through the wet-processing stations.Type: ApplicationFiled: November 2, 2001Publication date: February 28, 2002Inventors: Masayuki Kojima, Yoshimi Torii, Michimasa Hunabashi, Kazuyuki Suko, Takashi Yamada, Keizo Kuroiwa, Kazuo Nojiri, Yoshinao Kawasaki, Yoshiaki Sato, Ryooji Fukuyama, Hironobu Kawahara
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Publication number: 20020013063Abstract: Disclosed is apparatus for treating samples, and a method of using the apparatus. The apparatus includes processing apparatus (a) for treating the samples (e.g., plasma etching apparatus), (b) for removing residual corrosive compounds formed by the sample treatment, (c) for wet-processing of the samples and (d) for dry-processing the samples. A plurality of wet-processing treatments of a sample can be performed. The wet-processing apparatus can include a plurality of wet-processing stations. The samples can either be passed in series through the plurality of wet-processing stations, or can be passed in parallel through the wet-processing stations.Type: ApplicationFiled: July 31, 2001Publication date: January 31, 2002Inventors: Masayuki Kojima, Yoshimi Torii, Michimasa Hunabashi, Kazuyuki Suko, Takashi Yamada, Keizo Kuroiwa, Kazuo Nojiri, Yoshinao Kawasaki, Yoshiaki Sato, Ryooji Fukuyama, Hironobu Kawahara
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Patent number: 6329298Abstract: A post-etch treatment method capable of imparting high corrosion prevention performance to the aluminum-containing wiring films. The sample of aluminum-containing wiring material that is etched using the halogen-type gas is treated with the plasma of a gas that has the oxygen component, and the resist formed on the aluminum-containing wiring material is reacted with oxygen and is removed. Further, the plasma is generated using a gas having the hydrogen component or this gas is liquefied into droplets thereof on the sample surface, so that halogen components (Cl, Br, etc.) adhered to the aluminum-containing wiring material through the etching treatment are reacted with hydrogen and are effectively removed in the form of hydrogen chloride (HCl) or hydrogen bromide (HBr). This makes it possible to obtain the aluminum-containing wiring material having high corrosion prevention performance.Type: GrantFiled: December 8, 1997Date of Patent: December 11, 2001Assignee: Hitachi, Ltd.Inventors: Ryooji Fukuyama, Makoto Nawata, Yutaka Kakehi, Hironobu Kawahara, Yoshiaki Sato, Yoshimi Torii, Akira Kawaraya, Yoshie Sato
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Patent number: 6328845Abstract: A plasma-etching apparatus is capable of etching a film of a workpiece with a plasma produced in an evacuated etching chamber at a high etch selectivity relative to an underlying film or a resist film. The frequency of a RF bias voltage applied to a sample table by a RF power source is adjusted so that the ion energy of the plasma is distributed in a saddle-peak energy distribution pattern. The film is etched at a high etch selectivity relative to a material having a threshold ion energy.Type: GrantFiled: March 18, 1994Date of Patent: December 11, 2001Assignee: Hitachi, Ltd.Inventors: Yutaka Ohmoto, Ryooji Fukuyama, Makoto Nawata