Patents by Inventor Ryooji Fukuyama
Ryooji Fukuyama has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 6254721Abstract: Disclosed is apparatus for treating samples, and a method of using the apparatus. The apparatus includes processing apparatus (a) for treating the samples (e.g., plasma etching apparatus), (b) for removing residual corrosive compounds formed by the sample treatment, (c) for wet-processing of the samples and (d) for dry-processing the samples. A plurality of wet-processing treatments of a sample can be performed. The wet-processing apparatus can include a plurality of wet-processing stations. The samples can either be passed in series through the plurality of wet-processing stations, or can be passed in parallel through the wet-processing stations.Type: GrantFiled: February 15, 2000Date of Patent: July 3, 2001Assignee: Hitachi, Ltd.Inventors: Masayuki Kojima, Yoshimi Torii, Michimasa Hunabashi, Kazuyuki Suko, Takashi Yamada, Keizo Kuroiwa, Kazuo Nojiri, Yoshinao Kawasaki, Yoshiaki Sato, Ryooji Fukuyama, Hironobu Kawahara
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Patent number: 6165377Abstract: A plasma etching method includes the steps of placing a sample having metal a wiring portion on a sample table in a vacuum vessel, evacuating the vacuum vessel to establish a reduced pressure in the vacuum vessel, introducing an etching gas into the vacuum vessel while continuing to evacuate the vacuum vessel to maintain the reduced pressure in the vacuum vessel, and generating a plasma from the etching gas under the reduced pressure in the vacuum vessel using radio-frequency power. The plasma etches the metal wiring portion, and a residue forms on the metal wiring portion during the etching of the metal wiring portion by the plasma. The method further includes the step of applying to the sample table a bias voltage which periodically changes between two different voltages during the etching of the metal wiring portion by the plasma to remove the residue from the metal wiring portion.Type: GrantFiled: May 4, 1999Date of Patent: December 26, 2000Assignee: Hitachi, Ltd.Inventors: Hironobu Kawahara, Yoshinao Kawasaki, Yoshiaki Sato, Ryooji Fukuyama
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Patent number: 6077788Abstract: Disclosed is apparatus for treating samples, and a method of using the apparatus. The apparatus includes processing apparatus (a) for treating the samples (e.g., plasma etching apparatus, the samples being selectively etched through use of a resist mask), (b) for removing (ashing) the resist mask, (c) for wet-processing of the samples and (d) for dry-processing the samples. Samples are passed sequentially from a supply cassette (containing a plurality of samples) to the plasma etching apparatus, through the other apparatus and to a discharge cassette (which can hold a plurality of the samples). At least two of the samples can be processed simultaneously in a path from (and including), the plasma etching apparatus to (and including) the wet-processing structure.Type: GrantFiled: June 6, 1995Date of Patent: June 20, 2000Assignee: Hitachi, Ltd.Inventors: Yoshinao Kawasaki, Hironobu Kawahara, Yoshiaki Sato, Ryooji Fukuyama, Kazuo Nojiri, Yoshimi Torii
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Patent number: 6036816Abstract: Disclosed is apparatus for treating samples, and a method of using the apparatus. The apparatus includes processing apparatus (a) for treating the samples (e.g., plasma etching apparatus), (b) for removing residual corrosive compounds formed by the sample treatment, (c) for wet-processing of the samples and (d) for dry-processing the samples. A plurality of wet-processing treatments of a sample can be performed. The wet-processing apparatus can include a plurality of wet-processing stations. The samples can either be passed in series through the plurality of wet-processing stations, or can be passed in parallel through the wet-processing stations.Type: GrantFiled: June 6, 1995Date of Patent: March 14, 2000Assignee: Hitachi, Ltd.Inventors: Masayuki Kojima, Yoshimi Torii, Michimasa Hunabashi, Kazuyuki Suko, Takashi Yamada, Keizo Kuroiwa, Kazuo Nojiri, Yoshinao Kawasaki, Yoshiaki Sato, Ryooji Fukuyama, Hironobu Kawahara
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Patent number: 5952245Abstract: Disclosed is apparatus for treating samples, and a method of using the apparatus. The apparatus includes processing apparatus (a) for treating the samples (e.g., plasma etching apparatus), (b) for removing residual corrosive compounds formed by the sample treatment, (c) for wet-processing of the samples and (d) for dry-processing the samples. A plurality of wet-processing treatments of a sample can be performed. The wet-processing apparatus can include a plurality of wet-processing stations. The samples can either be passed in series through the plurality of wet-processing stations, or can be passed in parallel through the wet-processing stations.Type: GrantFiled: September 25, 1996Date of Patent: September 14, 1999Assignee: Hitachi, Ltd.Inventors: Yoshimi Torii, Kazuo Nojiri, Yoshinao Kawasaki, Yoshiaki Sato, Ryooji Fukuyama, Hironobu Kawahara
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Patent number: 5900162Abstract: The present invention relates to a plasma etching method and apparatus, and more particularly to a plasma etching method and apparatus which are well suited for etching the samples of semiconductor device substrates, etc. In cooling a sample to a temperature not higher than 0.degree. C. which is a minimum temperature of water and subjecting the sample to an etching process with a gas plasma, an acceleration voltage which accelerates ions in the gas plasma toward the sample is repeatedly changed, whereby in a process based on low-temperature etching, an etching process producing no residue, being anisotropic and being highly selective is realized.Type: GrantFiled: July 26, 1991Date of Patent: May 4, 1999Assignee: Hitachi, Ltd.Inventors: Hironobu Kawahara, Yoshinao Kawasaki, Yoshiaki Sato, Ryooji Fukuyama
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Patent number: 5868854Abstract: Disclosed is apparatus for treating samples, and a method of using the apparatus. The apparatus includes processing apparatus (a) for treating the samples (e.g., plasma etching apparatus), (b) for removing residual corrosive compounds formed by the sample treatment, (c) for wet-processing of the samples and (d) for dry-processing the samples. A plurality of wet-processing treatments of a sample can be performed. The wet-processing apparatus can include a plurality of wet-processing stations. The samples can either be passed in series through the plurality of wet-processing stations, or can be passed in parallel through the wet-processing stations.Type: GrantFiled: December 8, 1992Date of Patent: February 9, 1999Assignee: Hitachi, Ltd.Inventors: Masayuki Kojima, Yoshimi Torii, Michimasa Hunabashi, Kazuyuki Suko, Takashi Yamada, Keizo Kuroiwa, Kazuo Nojiri, Yoshinao Kawasaki, Yoshiaki Sato, Ryooji Fukuyama, Hironobu Kawahara
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Patent number: 5770100Abstract: A post-etch treatment method capable of imparting high corrosion prevention performance to the aluminum-containing wiring films. The sample of aluminum-containing wiring material that is etched using the halogen-type gas is treated with the plasma of a gas that has the oxygen component, and the resist formed on the aluminum-containing wiring material is reacted with oxygen and is removed. Further, the plasma is generated using a gas having the hydrogen component or this gas is liquefied into droplets thereof on the sample surface, so that halogen components (Cl, Br, etc.) adhered to the aluminum-containing wiring material through the etching treatment are reacted with hydrogen and are effectively removed in the form of hydrogen chloride (HCl) or hydrogen bromide (HBr). This makes it possible to obtain the aluminum-containing wiring material having high corrosion prevention performance.Type: GrantFiled: June 12, 1996Date of Patent: June 23, 1998Inventors: Ryooji Fukuyama, Makoto Nawata, Yutaka Kakehi, Hironobu Kawahara, Yoshiaki Sato, Yoshimi Torii, Akira Kawaraya, Yoshie Sato
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Patent number: 5556714Abstract: A post-etch treatment method capable of imparting high corrosion prevention performance to the aluminum-containing wiring films. The sample of aluminum-containing wiring material that is etched using the halogen-type gas is treated with the plasma of a gas that has the oxygen component, and the resist formed on the aluminum-containing wiring material is reacted with oxygen and is removed. Further, the plasma is generated using a gas having the hydrogen component or this gas is liquefied into droplets thereof on the sample surface, so that halogen components (Cl, Br, etc.) adhered to the aluminum-containing wiring material through the etching treatment are reacted with hydrogen and are effectively removed in the form of hydrogen chloride (HCl) or hydrogen bromide (HBr). This makes it possible to obtain the aluminum-containing wiring material having high corrosion prevention performance.Type: GrantFiled: September 29, 1994Date of Patent: September 17, 1996Assignee: Hitachi, Ltd.Inventors: Ryooji Fukuyama, Makoto Nawata, Yutaka Kakehi, Hironobu Kawahara, Yoshiaki Sato, Yoshimi Torii, Akira Kawaraya, Yoshie Sato
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Patent number: 5380397Abstract: A post-etch treatment method capable of imparting high corrosion prevention performance to the aluminum-containing wiring films. The sample of aluminum-containing wiring material that is etched using the halogen-type gas is treated with the plasma of a gas that has the oxygen component, and the resist formed on the aluminum-containing wiring material is reacted with oxygen and is removed. Further, the plasma is generated using a gas having the hydrogen component or this gas is liquefied into droplets thereof on the sample surface, so that halogen components (Cl, Br, etc.) adhered to the aluminum-containing wiring material through the etching treatment are reacted with hydrogen and are effectively removed in the form of hydrogen chloride (HCl) or hydrogen bromide (HBr). This makes it possible to obtain the aluminum-containing wiring material having high corrosion prevention performance.Type: GrantFiled: October 27, 1992Date of Patent: January 10, 1995Assignee: Hitachi, Ltd.Inventors: Ryooji Fukuyama, Makoto Nawata, Yutaka Kakehi, Hironobu Kawahara, Yoshiaki Sato, Yoshimi Torii, Akira Kawaraya, Yoshie Sato
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Patent number: 5276386Abstract: In a microwave plasma generating method and apparatus according to the present invention, a slow wave structure is disposed in the propagation region of microwaves, and the microwaves are introduced at a delayed phase velocity into a discharge chamber so that treating gases are transformed into plasma. Thus, the phase velocity of the microwaves is adjusted to a relatively low velocity, at which charged particles are distributed most densely in the plasma, so that the energy may be efficiently transformed to many more charged particles in the plasma. Thus, the plasma of high density is generated to improve a plasma treating rate.Type: GrantFiled: March 14, 1991Date of Patent: January 4, 1994Assignee: Hitachi, Ltd.Inventors: Seiichi Watanabe, Makoto Nawata, Ryooji Fukuyama, Yutaka Kakehi, Saburo Kanai, Yoshinao Kawasaki
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Patent number: 5200017Abstract: A method of processing a sample comprises etching the sample by means of an etching plasma, and then treating the sample by means of a second plasma to remove residual corrosive compounds formed by the etching plasma. Removal of the residual corrosive compounds and prevention of corrosion is much improved by contacting the surface of the sample after the second plasma treatment with at least one liquid in order to effect at least one of (a) removal of the residual corrosive compounds and (b) passivation of the surface, and drying the sample.Type: GrantFiled: January 7, 1991Date of Patent: April 6, 1993Assignee: Hitachi, Ltd.Inventors: Yoshinao Kawasaki, Hironobu Kawahara, Yoshiaki Sato, Ryooji Fukuyama, Kazuo Nojiri, Yoshimi Torii
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Patent number: 5007981Abstract: A sample is plasma etched and then treated with a second plasma to remove residual corrosive compounds formed by the etching plasma. Removal of the residual corrosive compounds and prevention of corrosion is improved by washing the surface of the sample after the second plasma treatment with at least one liquid in order to effect at least one of (a) removal of the residual corrosive compounds and (b) passivation of the surface, the step of washing is followed by drying the sample.Type: GrantFiled: February 9, 1990Date of Patent: April 16, 1991Assignee: Hitachi, Ltd.Inventors: Yoshinao Kawasaki, Hironobu Kawahara, Yoshiaki Sato, Ryooji Fukuyama, Kazuo Nojiri, Yoshimi Torii
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Patent number: 4971651Abstract: This invention relates to a microwave plasma processing method and apparatus.An electromagnetic field intensity distribution of a microwave, which is incident into a plasma generation chamber and is again incident due to irregular reflection, is made uniform by uniforming means fixed inside a waveguide, a processing gas is converted to plasma by use of the microwave having the uniformed electromagnetic field intensity distribution, and a sample is plasma-processed by the resulting plasma. Accordingly, the electro-magnetic field of the microwave, which is incident, and is again incident, into the plasma generation region and locally increases a plasma density, is absorbed, attenuated or diffused by the uniforming means so that the distribution of the plasma density is made uniform and uniform processing can be effected.Type: GrantFiled: February 5, 1990Date of Patent: November 20, 1990Assignee: Hitachi, Ltd.Inventors: Seiichi Watanabe, Makoto Nawata, Ryooji Fukuyama, Yutaka Kakehi, Saburo Kanai, Keiji Ueyama