Abstract: An acoustic wave device includes a piezoelectric material substrate, an intermediate layer on the piezoelectric material substrate and composed of one or more materials selected from the group consisting of silicon oxide, aluminum nitride and sialon. A bonding layer is on the intermediate layer and is composed of one or more materials selected from the group consisting of tantalum pentoxide, niobium pentoxide, titanium oxide, mullite, alumina, and a high resistance silicon and hafnium oxide. A supporting body is composed of a polycrystalline ceramic and is bonded to the bonding layer by direct bonding, and an electrode is on the piezoelectric material substrate.

Abstract: A piezoelectric vibrating device includes a piezoelectric layer composed of a bulk piezoelectric material, a lower electrode on a first surface of the piezoelectric layer and a supporting substrate bonded with the lower electrode.

Abstract: There is provided a composite substrate in which peeling is significantly suppressed, light propagation loss is small when used as an electro-optical element, and high-speed and low-voltage drive is possible, and which can achieve an extremely thin electro-optical element capable of maintaining excellent reliability even under a severe high-temperature environment. A composite substrate for an electro-optical element according to an embodiment of the present invention includes: an electro-optical crystal substrate having an electro-optical effect; a first high dielectric layer; a second high dielectric layer; and a support substrate in the stated order. The first high dielectric layer and the second high dielectric layer are directly joined to each other, and an amorphous layer is formed at a joining interface between the first high dielectric layer and the second high dielectric layer.

Abstract: A method of producing periodic polarization inversion structures requires the provision of first electrode piece part-arrays, each having electrode piece parts on a first main face of a ferroelectric crystal substrate. A voltage is applied on the first electrode piece part-arrays to form first periodic polarization inversion structures. Second electrode piece part-arrays are provided, each having electrode piece parts between the adjacent plural first periodic polarization inversion structures. A voltage is applied on the second electrode piece part-arrays to form second polarization inversion structures.

Abstract: A bonded body includes a supporting substrate, piezoelectric material substrate and a multilayer film, between the supporting substrate and piezoelectric material substrate. The multilayer film includes a lamination structure having a first layer, second layer, third layer and fourth layer in the order. The first layer and third layer are composed of silicon oxides, and the second layer and fourth layer are composed of metal oxides. The refractive index of the second layer is higher than the refractive index of the first layer and refractive index of the third layer. The refractive index of the second layer is different from the refractive index of the fourth layer.

Abstract: Described herein is a method of bonding a piezoelectric substrate to a support substrate to form a composite substrate. The piezoelectric substrate has one surface which is positively polarized, and a second surface which is negatively polarized. The method described herein includes the steps of bonding the positively polarized surface of the piezoelectric substrate to one surface of the support substrate by a direct bonding method.

Abstract: A bonded body includes a supporting substrate; a piezoelectric single crystal substrate composed of a material selected from the group consisting of lithium niobate, lithium tantalate and lithium niobate-lithium tantalate; and an amorphous layer present between the supporting substrate and piezoelectric material substrate, and the amorphous layer contains one or more metal atoms selected from the group consisting of niobium and tantalum, an atom constituting the supporting substrate, and an argon atom. A concentration of the argon atom in a central part of the amorphous layer is higher than a concentration of the argon atom in a peripheral part of the amorphous layer.

Abstract: A bonded body includes a supporting substrate, a piezoelectric material substrate composed of a material selected from the group consisting of lithium niobate, lithium tantalate and lithium niobate-lithium tantalate, and an amorphous layer present between the supporting substrate and piezoelectric material substrate. The amorphous layer contains one or more metal element selected from the group consisting of niobium and tantalum, an element constituting the supporting substrate and oxygen element. The concentration of the metal element in the amorphous layer is higher than the concentration of oxygen element and 20 to 65 atom %.

Abstract: A bonded body includes a supporting substrate; a piezoelectric single crystal substrate composed of a material selected from the group consisting of lithium niobate, lithium tantalate and lithium niobate-lithium tantalate; and an amorphous layer present between the supporting substrate and piezoelectric material substrate, and the amorphous layer contains one or more metal atom selected from the group consisting of niobium and tantalum, an atom constituting the supporting substrate and argon atom. A concentration of the argon atom in a central part of the amorphous layer is higher than a concentration of the argon atom in a peripheral part of the amorphous layer.

Abstract: A bonded body includes a supporting substrate, a piezoelectric material substrate composed of a material selected from the group consisting of lithium niobate, lithium tantalate and lithium niobate-lithium tantalate, and an amorphous layer present between the supporting substrate and piezoelectric material substrate. The amorphous layer contains one or more metal element selected from the group consisting of niobium and tantalum, an element constituting the supporting substrate and oxygen element. The concentration of the metal element in the amorphous layer is higher than the concentration of oxygen element and 20 to 65 atom %.

Abstract: A method for producing an elastic wave device includes steps of (a) preparing a first substrate and a second substrate, (b) irradiating a bonding surface of the first substrate and a bonding surface of the second substrate with one of plasma, neutral atom beams, and ion beams of an inert gas, (c) bonding the bonding surface of the first substrate and the bonding surface of the second substrate in a vacuum at room temperature so as to set a strength that allows the first and second substrates to be separated by insertion of a blade; (d) forming a composite substrate by bonding a piezoelectric substrate to another surface of the first substrate; (e) forming electrode on a surface of the piezoelectric substrate of the composite substrate; and then (f) removing the second substrate from the first substrate by separation with the blade.

Abstract: It is provided first electrode piece part-arrays each comprising a plurality of electrode piece parts on a first main face of a ferroelectric crystal substrate. A voltage is applied on the first electrode piece part-arrays to form first periodic polarization inversion structures. It is provided second electrode piece part-arrays each comprising a plurality of electrode piece parts between the adjacent plural first periodic polarization inversion structures. A voltage is applied on the second electrode piece part-arrays to form second polarization inversion structures.

Abstract: An acoustic wave device includes a piezoelectric material substrate, an intermediate layer on the piezoelectric material substrate and composed of one or more materials selected from the group consisting of silicon oxide, aluminum nitride and sialon, a bonding layer on the intermediate layer and composed of one or more materials selected from the group consisting of tantalum pentoxide, niobium pentoxide, titanium oxide, mullite, alumina, a high resistance silicon and hafnium oxide, a supporting body composed of a polycrystalline ceramic and bonded to the bonding layer by direct bonding, and an electrode on the piezoelectric material substrate.

Abstract: In the composite substrate 10, the piezoelectric substrate 12 and the support substrate 14 are bonded by direct bonding using an ion beam. One surface of the piezoelectric substrate 12 is a negatively-polarized surface 12a and another surface of the piezoelectric substrate 12 is a positively-polarized surface 12b. An etching rate at which the negatively-polarized surface 12a is etched with a strong acid may be higher than an etching rate at which the positively-polarized surface 12b is etched with the strong acid. The positively-polarized surface 12b of the piezoelectric substrate 12 is directly bonded to the support substrate 14. The negatively-polarized surface 12a of the piezoelectric substrate 12 may be etched with the strong acid.

Abstract: In the composite substrate, the piezoelectric substrate and the support substrate are bonded by direct bonding using an ion beam. One surface of the piezoelectric substrate is a negatively-polarized surface and another surface of the piezoelectric substrate is a positively-polarized surface. An etching rate at which the negatively-polarized surface is etched with a strong acid may be higher than an etching rate at which the positively-polarized surface is etched with the strong acid. The positively-polarized surface of the piezoelectric substrate is directly bonded to the support substrate. The negatively-polarized surface of the piezoelectric substrate may be etched with the strong acid.

Abstract: A composite substrate 10 is formed by bonding together a piezoelectric substrate 12 and a support substrate 14 that has a lower thermal expansion coefficient than the piezoelectric substrate. The support substrate 14 is formed by directly bonding together a first substrate 14a and a second substrate 14b at a strength that allows separation with a blade, the first and second substrates being formed of the same material, and a surface of the first substrate 14a is bonded to the piezoelectric substrate 12, the surface being opposite to another surface of the first substrate 14a bonded to the second substrate 14b.

Abstract: A composite substrate 10 is formed by bonding together a piezoelectric substrate 12 and a support substrate 14 that has a lower thermal expansion coefficient than the piezoelectric substrate. The support substrate 14 is formed by directly bonding together a first substrate 14a and a second substrate 14b at a strength that allows separation with a blade, the first and second substrates being formed of the same material, and a surface of the first substrate 14a is bonded to the piezoelectric substrate 12, the surface being opposite to another surface of the first substrate 14a bonded to the second substrate 14b.

Abstract: A composite substrate 10 includes a semiconductor substrate 12 and an insulating support substrate 14 that are laminated together. The support substrate 14 includes first and second substrates 14a and 14b made of the same material and bonded together with a strength that allows the first and second substrates 14a and 14b to be separated from each other with a blade. The semiconductor substrate 12 is laminated on a surface of the first substrate 14a opposite a surface thereof bonded to the second substrate 14b.

Abstract: In the composite substrate 10, the piezoelectric substrate 12 and the support substrate 14 are bonded by direct bonding using an ion beam. One surface of the piezoelectric substrate 12 is a negatively-polarized surface 12a and another surface of the piezoelectric substrate 12 is a positively-polarized surface 12b. An etching rate at which the negatively-polarized surface 12a is etched with a strong acid may be higher than an etching rate at which the positively-polarized surface 12b is etched with the strong acid. The positively-polarized surface 12b of the piezoelectric substrate 12 is directly bonded to the support substrate 14. The negatively-polarized surface 12a of the piezoelectric substrate 12 may be etched with the strong acid.

Abstract: A composite substrate 10 includes a semiconductor substrate 12 and an insulating support substrate 14 that are laminated together. The support substrate 14 includes first and second substrates 14a and 14b made of the same material and bonded together with a strength that allows the first and second substrates 14a and 14b to be separated from each other with a blade. The semiconductor substrate 12 is laminated on a surface of the first substrate 14a opposite a surface thereof bonded to the second substrate 14b.