Patents by Inventor Ryosuke Watanabe
Ryosuke Watanabe has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 9318617Abstract: It is an object to provide a highly reliable semiconductor device with good electrical characteristics and a display device including the semiconductor device as a switching element. In a transistor including an oxide semiconductor layer, a needle crystal group provided on at least one surface side of the oxide semiconductor layer grows in a c-axis direction perpendicular to the surface and includes an a-b plane parallel to the surface, and a portion except for the needle crystal group is an amorphous region or a region in which amorphousness and microcrystals are mixed. Accordingly, a highly reliable semiconductor device with good electrical characteristics can be formed.Type: GrantFiled: December 18, 2014Date of Patent: April 19, 2016Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventors: Shunpei Yamazaki, Masayuki Sakakura, Ryosuke Watanabe, Junichiro Sakata, Kengo Akimoto, Akiharu Miyanaga, Takuya Hirohashi, Hideyuki Kishida
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Patent number: 9299855Abstract: A semiconductor device includes a semiconductor layer, a gate electrode overlapping with the semiconductor layer, a first gate insulating layer between the semiconductor layer and the gate electrode, and a second gate insulating layer between the first gate insulating layer and the gate electrode. The first gate insulating layer includes an oxide in which the nitrogen content is lower than or equal to 5 at. %, and the second gate insulating layer includes charge trap states.Type: GrantFiled: July 31, 2014Date of Patent: March 29, 2016Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventors: Shunpei Yamazaki, Takuya Hirohashi, Masahiro Takahashi, Motoki Nakashima, Ryosuke Watanabe, Masashi Tsubuku
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Patent number: 9275875Abstract: An object is to provide a semiconductor device including an oxide semiconductor, which has stable electrical characteristics and high reliability. In a manufacturing process of a bottom-gate transistor including an oxide semiconductor layer, heat treatment in an atmosphere containing oxygen and heat treatment in vacuum are sequentially performed for dehydration or dehydrogenation of the oxide semiconductor layer. In addition, irradiation with light having a short wavelength is performed concurrently with the heat treatment, whereby elimination of hydrogen, OH, or the like is promoted. A transistor including an oxide semiconductor layer on which dehydration or dehydrogenation treatment is performed through such heat treatment has improved stability, so that variation in electrical characteristics of the transistor due to light irradiation or a bias-temperature stress (BT) test is suppressed.Type: GrantFiled: October 31, 2014Date of Patent: March 1, 2016Assignee: SEMICONDUCTOR ENERGY LABORATORY CO., LTDInventors: Shunpei Yamazaki, Ryosuke Watanabe, Suzunosuke Hiraishi, Junichiro Sakata
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Patent number: 9214563Abstract: It is an object to provide a highly reliable semiconductor device with good electrical characteristics and a display device including the semiconductor device as a switching element. In a transistor including an oxide semiconductor layer, a needle crystal group provided on at least one surface side of the oxide semiconductor layer grows in a c-axis direction perpendicular to the surface and includes an a-b plane parallel to the surface, and a portion except for the needle crystal group is an amorphous region or a region in which amorphousness and microcrystals are mixed. Accordingly, a highly reliable semiconductor device with good electrical characteristics can be formed.Type: GrantFiled: July 22, 2013Date of Patent: December 15, 2015Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventors: Shunpei Yamazaki, Masayuki Sakakura, Ryosuke Watanabe, Junichiro Sakata, Kengo Akimoto, Akiharu Miyanaga, Takuya Hirohashi, Hideyuki Kishida
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Publication number: 20150349133Abstract: An oxide semiconductor stacked film which does not easily cause a variation in electrical characteristics of a transistor and has high stability is provided. Further, a transistor which includes the oxide semiconductor stacked film in its channel formation region and has stable electrical characteristics is provided. An oxide semiconductor stacked film includes a first oxide semiconductor layer, a second oxide semiconductor layer, and a third oxide semiconductor layer which are sequentially stacked and each of which contains indium, gallium, and zinc. The content percentage of indium in the second oxide semiconductor layer is higher than that in the first oxide semiconductor layer and the third oxide semiconductor layer, and the absorption coefficient of the oxide semiconductor stacked film, which is measured by the CPM, is lower than or equal to 3×10?3/cm in an energy range of 1.5 eV to 2.3 eV.Type: ApplicationFiled: July 30, 2015Publication date: December 3, 2015Inventors: Shunpei YAMAZAKI, Masashi TSUBUKU, Ryosuke WATANABE, Masashi OOTA, Noritaka ISHIHARA, Koki INOUE
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Publication number: 20150287660Abstract: Thin film integrated circuits are peeled from a substrate and the peeled thin film integrated circuits are sealed, efficiently in order to improve manufacturing yields. The present invention provides laminating system comprising transporting means for transporting a substrate provided with a plurality of thin film integrated circuits; first peeling means for bonding first surfaces of the thin film integrated circuits to a first sheet member to peel the thin film integrated circuits from the substrate; second peeling means for bonding second surfaces of the thin film integrated circuits to a second sheet member to peel the thin film integrated circuits from the first sheet member; and sealing means for interposing the thin film integrated circuits between the second sheet member and a third sheet member to seal the thin film integrated circuit with the second sheet member and the third sheet member.Type: ApplicationFiled: May 28, 2015Publication date: October 8, 2015Inventors: Ryosuke WATANABE, Naoto KUSUMOTO, Osamu NAKAMURA
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Patent number: 9123573Abstract: An oxide semiconductor stacked film which does not easily cause a variation in electrical characteristics of a transistor and has high stability is provided. Further, a transistor which includes the oxide semiconductor stacked film in its channel formation region and has stable electrical characteristics is provided. An oxide semiconductor stacked film includes a first oxide semiconductor layer, a second oxide semiconductor layer, and a third oxide semiconductor layer which are sequentially stacked and each of which contains indium, gallium, and zinc. The content percentage of indium in the second oxide semiconductor layer is higher than that in the first oxide semiconductor layer and the third oxide semiconductor layer, and the absorption coefficient of the oxide semiconductor stacked film, which is measured by the CPM, is lower than or equal to 3×10?3/cm in an energy range of 1.5 eV to 2.3 eV.Type: GrantFiled: October 29, 2014Date of Patent: September 1, 2015Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventors: Shunpei Yamazaki, Masashi Tsubuku, Ryosuke Watanabe, Masashi Oota, Noritaka Ishihara, Koki Inoue
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Patent number: 9053401Abstract: Thin film integrated circuits are peeled from a substrate and the peeled thin film integrated circuits are sealed, efficiently in order to improve manufacturing yields. The present invention provides laminating system comprising transporting means for transporting a substrate provided with a plurality of thin film integrated circuits; first peeling means for bonding first surfaces of the thin film integrated circuits to a first sheet member to peel the thin film integrated circuits from the substrate; second peeling means for bonding second surfaces of the thin film integrated circuits to a second sheet member to peel the thin film integrated circuits from the first sheet member; and sealing means for interposing the thin film integrated circuits between the second sheet member and a third sheet member to seal the thin film integrated circuit with the second sheet member and the third sheet member.Type: GrantFiled: July 28, 2005Date of Patent: June 9, 2015Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventors: Ryosuke Watanabe, Naoto Kusumoto, Osamu Nakamura
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Publication number: 20150104901Abstract: It is an object to provide a highly reliable semiconductor device with good electrical characteristics and a display device including the semiconductor device as a switching element. In a transistor including an oxide semiconductor layer, a needle crystal group provided on at least one surface side of the oxide semiconductor layer grows in a c-axis direction perpendicular to the surface and includes an a-b plane parallel to the surface, and a portion except for the needle crystal group is an amorphous region or a region in which amorphousness and microcrystals are mixed. Accordingly, a highly reliable semiconductor device with good electrical characteristics can be formed.Type: ApplicationFiled: December 18, 2014Publication date: April 16, 2015Inventors: Shunpei YAMAZAKI, Masayuki SAKAKURA, Ryosuke WATANABE, Junichiro SAKATA, Kengo AKIMOTO, Akiharu MIYANAGA, Takuya HIROHASHI, Hideyuki KISHIDA
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Publication number: 20150048368Abstract: An oxide semiconductor stacked film which does not easily cause a variation in electrical characteristics of a transistor and has high stability is provided. Further, a transistor which includes the oxide semiconductor stacked film in its channel formation region and has stable electrical characteristics is provided. An oxide semiconductor stacked film includes a first oxide semiconductor layer, a second oxide semiconductor layer, and a third oxide semiconductor layer which are sequentially stacked and each of which contains indium, gallium, and zinc. The content percentage of indium in the second oxide semiconductor layer is higher than that in the first oxide semiconductor layer and the third oxide semiconductor layer, and the absorption coefficient of the oxide semiconductor stacked film, which is measured by the CPM, is lower than or equal to 3×10?3/cm in an energy range of 1.5 eV to 2.3 eV.Type: ApplicationFiled: October 29, 2014Publication date: February 19, 2015Inventors: Shunpei YAMAZAKI, Masashi TSUBUKU, Ryosuke WATANABE, Masashi OOTA, Noritaka ISHIHARA, Koki INOUE
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Publication number: 20150050775Abstract: An object is to provide a semiconductor device including an oxide semiconductor, which has stable electrical characteristics and high reliability. In a manufacturing process of a bottom-gate transistor including an oxide semiconductor layer, heat treatment in an atmosphere containing oxygen and heat treatment in vacuum are sequentially performed for dehydration or dehydrogenation of the oxide semiconductor layer. In addition, irradiation with light having a short wavelength is performed concurrently with the heat treatment, whereby elimination of hydrogen, OH, or the like is promoted. A transistor including an oxide semiconductor layer on which dehydration or dehydrogenation treatment is performed through such heat treatment has improved stability, so that variation in electrical characteristics of the transistor due to light irradiation or a bias-temperature stress (BT) test is suppressed.Type: ApplicationFiled: October 31, 2014Publication date: February 19, 2015Inventors: Shunpei YAMAZAKI, Ryosuke WATANABE, Suzunosuke HIRAISHI, Junichiro SAKATA
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Publication number: 20150041801Abstract: A semiconductor device includes a semiconductor layer, a gate electrode overlapping with the semiconductor layer, a first gate insulating layer between the semiconductor layer and the gate electrode, and a second gate insulating layer between the first gate insulating layer and the gate electrode. The first gate insulating layer includes an oxide in which the nitrogen content is lower than or equal to 5 at. %, and the second gate insulating layer includes charge trap states.Type: ApplicationFiled: July 31, 2014Publication date: February 12, 2015Inventors: Shunpei YAMAZAKI, Takuya HIROHASHI, Masahiro TAKAHASHI, Motoki NAKASHIMA, Ryosuke WATANABE, Masashi TSUBUKU
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Patent number: 8906756Abstract: An object is to provide a semiconductor device including an oxide semiconductor, which has stable electrical characteristics and high reliability. In a manufacturing process of a bottom-gate transistor including an oxide semiconductor layer, heat treatment in an atmosphere containing oxygen and heat treatment in vacuum are sequentially performed for dehydration or dehydrogenation of the oxide semiconductor layer. In addition, irradiation with light having a short wavelength is performed concurrently with the heat treatment, whereby elimination of hydrogen, OH, or the like is promoted. A transistor including an oxide semiconductor layer on which dehydration or dehydrogenation treatment is performed through such heat treatment has improved stability, so that variation in electrical characteristics of the transistor due to light irradiation or a bias-temperature stress (BT) test is suppressed.Type: GrantFiled: May 18, 2011Date of Patent: December 9, 2014Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventors: Shunpei Yamazaki, Ryosuke Watanabe, Suzunosuke Hiraishi, Junichiro Sakata
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Patent number: 8890159Abstract: An oxide semiconductor stacked film which does not easily cause a variation in electrical characteristics of a transistor and has high stability is provided. Further, a transistor which includes the oxide semiconductor stacked film in its channel formation region and has stable electrical characteristics is provided. An oxide semiconductor stacked film includes a first oxide semiconductor layer, a second oxide semiconductor layer, and a third oxide semiconductor layer which are sequentially stacked and each of which contains indium, gallium, and zinc. The content percentage of indium in the second oxide semiconductor layer is higher than that in the first oxide semiconductor layer and the third oxide semiconductor layer, and the absorption coefficient of the oxide semiconductor stacked film, which is measured by the CPM, is lower than or equal to 3×10?3/cm in an energy range of 1.5 eV to 2.3 eV.Type: GrantFiled: July 29, 2013Date of Patent: November 18, 2014Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventors: Shunpei Yamazaki, Masashi Tsubuku, Ryosuke Watanabe, Masashi Oota, Noritaka Ishihara, Koki Inoue
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Publication number: 20140252345Abstract: An oxide semiconductor film having high stability with respect to light irradiation or a semiconductor device having high stability with respect to light irradiation is provided. One embodiment of the present invention is a semiconductor film including an oxide in which light absorption is observed by a constant photocurrent method (CPM) in a wavelength range of 400 nm to 800 nm, and in which an absorption coefficient of a defect level, which is obtained by removing light absorption due to a band tail from the light absorption, is lower than or equal to 5×10?2/cm. Alternatively, a semiconductor device is manufactured using the semiconductor film.Type: ApplicationFiled: March 4, 2014Publication date: September 11, 2014Applicant: Semiconductor Energy Laboratory Co., Ltd.Inventors: Masashi TSUBUKU, Ryosuke WATANABE
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Publication number: 20140220745Abstract: It is an object of the invention to improve the production efficiency in sealing a thin film integrated circuit and to prevent the damage and break. Further, it is another object of the invention to prevent a thin film integrated circuit from being damaged in shipment and to make it easier to handle the thin film integrated circuit. The invention provides a laminating system in which rollers are used for supplying a substrate for sealing, receiving IC chips, separating, and sealing. The separation, sealing, and reception of a plurality of thin film integrated circuits can be carried out continuously by rotating the rollers; thus, the production efficiency can be extremely improved. Further, the thin film integrated circuits can be easily sealed since a pair of rollers opposite to each other is used.Type: ApplicationFiled: March 18, 2014Publication date: August 7, 2014Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.Inventors: Ryosuke WATANABE, Hidekazu TAKAHASHI, Takuya TSURUME
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Publication number: 20140113405Abstract: To form an oxide semiconductor film with a low density of localized levels. To improve electric characteristics of a semiconductor device including the oxide semiconductor. After oxygen is added to an oxide film containing In or Ga in contact with an oxide semiconductor film functioning as a channel, heat treatment is performed to make oxygen in the oxide film containing In or Ga transfer to the oxide semiconductor film functioning as a channel, so that the amount of oxygen vacancies in the oxide semiconductor film is reduced. Further, an oxide film containing In or Ga is formed, oxygen is added to the oxide film, an oxide semiconductor film is formed over the oxide film, and then heat treatment is performed.Type: ApplicationFiled: October 17, 2013Publication date: April 24, 2014Applicant: Semiconductor Energy Laboratory Co., Ltd.Inventors: Masashi TSUBUKU, Ryosuke WATANABE, Noritaka ISHIHARA, Masashi OOTA
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Patent number: 8698156Abstract: It is an object of the invention to improve the production efficiency in sealing a thin film integrated circuit and to prevent the damage and break. Further, it is another object of the invention to prevent a thin film integrated circuit from being damaged in shipment and to make it easier to handle the thin film integrated circuit. The invention provides a laminating system in which rollers are used for supplying a substrate for sealing, receiving IC chips, separating, and sealing. The separation, sealing, and reception of a plurality of thin film integrated circuits can be carried out continuously by rotating the rollers; thus, the production efficiency can be extremely improved. Further, the thin film integrated circuits can be easily sealed since a pair of rollers opposite to each other is used.Type: GrantFiled: March 13, 2009Date of Patent: April 15, 2014Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventors: Ryosuke Watanabe, Hidekazu Takahashi, Takuya Tsurume
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Publication number: 20140034946Abstract: An oxide semiconductor stacked film which does not easily cause a variation in electrical characteristics of a transistor and has high stability is provided. Further, a transistor which includes the oxide semiconductor stacked film in its channel formation region and has stable electrical characteristics is provided. An oxide semiconductor stacked film includes a first oxide semiconductor layer, a second oxide semiconductor layer, and a third oxide semiconductor layer which are sequentially stacked and each of which contains indium, gallium, and zinc. The content percentage of indium in the second oxide semiconductor layer is higher than that in the first oxide semiconductor layer and the third oxide semiconductor layer, and the absorption coefficient of the oxide semiconductor stacked film, which is measured by the CPM, is lower than or equal to 3×10?3/cm in an energy range of 1.5 eV to 2.3 eV.Type: ApplicationFiled: July 29, 2013Publication date: February 6, 2014Applicant: Semiconductor Energy Laboratory Co., Ltd.Inventors: Shunpei YAMAZAKI, Masashi TSUBUKU, Ryosuke WATANABE, Masashi OOTA, Noritaka ISHIHARA, Koki INOUE
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Patent number: 8625085Abstract: Even in the case of a sample exhibiting low photoresponse, such as a wide bandgap semiconductor, a measurement method which enables highly accurate CPM measurement is provided. When CPM measurement is performed, photoexcited carriers which are generated by light irradiation of a sample exhibiting low photoresponse such as a wide bandgap semiconductor are instantly removed by application of positive bias voltage to a third electrode which is provided in the sample in addition to two electrodes used for measurement. When the photoexcited carriers are removed, even in the case of the sample exhibiting low photoresponse, the controllability of a photocurrent value is improved and CPM measurement can be performed accurately.Type: GrantFiled: February 29, 2012Date of Patent: January 7, 2014Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventors: Ryosuke Watanabe, Masashi Tsubuku, Takayuki Inoue