Abstract: To provide an ink jet printer capable of reliably detecting a poor connection of connection terminal of a print head in a short time without wasting ink. For that end, a print head is mounted on a carriage, and power is supplied from a capacitor to a heater before charging ink to the print head, so as to determine the presence of voltage drop.

Abstract: According to one embodiment, a solid-state imaging device includes a photoelectric conversion element, a fixed charge layer, a silicon nitride film, and a silicon oxide film. The photoelectric conversion element performs photoelectric conversion of converting incident light into the amount of charges corresponding to the amount of received light, and accumulates the charges. The fixed charge layer is formed on a light receiving surface side of the photoelectric conversion element, and holds negative fixed charges. The silicon nitride film is formed on a light receiving surface side of the fixed charge layer. The silicon oxide film is formed between the fixed charge layer and the silicon nitride film.

Abstract: A chemically modified water-soluble elastin that is obtained by subjecting to N-acylating some or all of the primary amines and secondary amines contained in the molecule of a high molecular weight water-soluble elastin and coupling some or all of the carboxyl groups contained in the molecule with the amino group of an amino acid alkyl ester. A chemically modified water-soluble elastin/collagen mixed gel obtained by mixing a collagen with a chemically modified water-soluble elastin that is obtained by subjecting to N-acylating some or all of the primary amines and secondary amines contained in the molecule of a high molecular weight water-soluble elastin and coupling some or all of the carboxyl groups contained in the molecule with the amino group of an amino acid alkyl ester.

Abstract: According to one embodiment, a method for manufacturing a solid-state imaging apparatus is provided. The method for manufacturing a solid-state imaging apparatus includes forming an element separating area separating photoelectric converting elements therebetween by epitaxially growing a semiconductor layer of a first conductivity type; and forming a charge accumulating area in the photoelectric converting element by epitaxially growing a semiconductor layer of a second conductivity type.

Abstract: An organic light-emitting element includes a first electrode, a second electrode, and at least one organic compound layer disposed between the first electrode and the second electrode. The organic compound layer includes a light-emitting layer containing a light-emitting material and being configured to emit light toward the first electrode and the second electrode. The light emitted toward the first electrode is reflected from a reflection plane located at the first electrode to cause interference with the light emitted toward the second electrode. The interference provides an interference intensity distribution having a maximum peak at a wavelength ?1. The light-emitting material of the light-emitting layer exhibits a photoluminescence spectrum having a maximum peak at a wavelength ?2. The organic light-emitting element produces an electroluminescence spectrum having a maximum peak at a wavelength ?3. These wavelengths satisfy the relationships: ?2??3 and |?2??3|<|?2??1|.

Abstract: A semiconductor device includes a substrate, a gate electrode formed on the substrate, a source region and a drain region formed in the substrate, the source region and the drain region formed located on the both side of the gate electrode, a first insulating film formed on the substrate, the first insulating film for generating a stress in a channel region under the gate electrode, a contact formed on the source region and the drain region, and the contact formed so that an amount of the first insulating film formed on the source region is larger than an amount of the first insulating film formed on the drain region.

Abstract: An organic light-emitting element includes a first electrode, a second electrode, and at least one organic compound layer disposed between the first electrode and the second electrode. The organic compound layer includes a light-emitting layer containing a light-emitting material and being configured to emit light toward the first electrode and the second electrode. The light emitted toward the first electrode is reflected from a reflection plane located at the first electrode to cause interference with the light emitted toward the second electrode. The interference provides an interference intensity distribution having a maximum peak at a wavelength ?1. The light-emitting material of the light-emitting layer exhibits a photoluminescence spectrum having a maximum peak at a wavelength ?2. The organic light-emitting element produces an electroluminescence spectrum having a maximum peak at a wavelength ?3. These wavelengths satisfy the relationships: ?2??3 and |?2??3|<|?2??1|.

Abstract: A semiconductor device includes a substrate, a gate electrode formed on the substrate, a source region and a drain region formed in the substrate, the source region and the drain region formed located on the both side of the gate electrode, a first insulating film formed on the substrate, the first insulating film for generating a stress in a channel region under the gate electrode, a contact formed on the source region and the drain region, and the contact formed so that an amount of the first insulating film formed on the source region is larger than an amount of the first insulating film formed on the drain region.