Abstract: An exemplary method for fabricating a semiconductor device includes the steps (a) growing a p-type gallium nitride-based compound semiconductor layer in a heated atmosphere; (b) cooling the p-type gallium nitride-based compound semiconductor layer; (c) forming three or more well layers before the step (a); and (d) forming an n-type semiconductor layer on a substrate before the step (c), wherein the step (c) includes growing each of the well layers to a thickness of 5 nm or more with the supply of the hydrogen gas to the reaction chamber cut off, and wherein the step (a) includes supplying hydrogen gas to the reaction chamber, and wherein the step (b) includes cooling the p-type gallium nitride-based compound semiconductor layer with the supply of the hydrogen gas to the reaction chamber cut off.

Abstract: A method for fabricating a semiconductor device according to the present invention includes the steps of: growing a p-type gallium nitride-based compound semiconductor layer by performing a metalorganic chemical vapor deposition process in a heated atmosphere so that the crystal-growing plane of the semiconductor layer is an m plane (Step S13); and cooling the p-type gallium nitride-based compound semiconductor layer (Step S14) after the step of growing has been carried out. The step of growing includes supplying hydrogen gas to a reaction chamber in which the p-type gallium nitride-based compound semiconductor layer is grown. The step of cooling includes cooling the p-type gallium nitride-based compound semiconductor layer with the supply of the hydrogen gas to the reaction chamber cut off.

Abstract: A nitride-based semiconductor device according to the present disclosure includes a nitride-based semiconductor multilayer structure 20 with a p-type semiconductor region, of which the surface 12 defines a tilt angle of one to five degrees with respect to an m plane, and an electrode 30, which is arranged on the p-type semiconductor region. The p-type semiconductor region is made of an AlxInyGazN (where x+y+z=1, x?0, y?0 and z?0) semiconductor layer 26. The electrode 30 includes an Mg layer 32, which is in contact with the surface 12 of the p-type semiconductor region, and a metal layer 34 formed on the Mg layer 32. The metal layer 34 is formed from at least one metallic element that is selected from the group consisting of Pt, Mo and Pd.

Abstract: A nitride-based semiconductor device includes a p-type AldGaeN layer 25 whose growing plane is an m-plane and an electrode 30 provided on the p-type AldGaeN layer 25. The AldGaeN layer 25 includes a p-AldGaeN contact layer 26 that is made of an AlxGayInzN (x+y+z=1, x?0, y>0, z?0) semiconductor, which has a thickness of not less than 26 nm and not more than 60 nm. The p-AldGaeN contact layer 26 includes a body region 26A which contains Mg of not less than 4×1019 cm?3 and not more than 2×1020 cm?3 and a high concentration region 26B which is in contact with the electrode 30 and which has a Mg concentration of not less than 1×1021 cm?3.

Abstract: A nitride-based semiconductor light-emitting element includes an n-GaN layer 102, a p-GaN layer 107, and a GaN/InGaN multi-quantum well active layer 105, which is interposed between the n- and p-GaN layers 102 and 107. The GaN/InGaN multi-quantum well active layer 105 is an m-plane semiconductor layer, which includes an InxGa1-xN (where 0<x<1) well layer 104 that has a thickness of 6 nm or more and 17 nm or less, and oxygen atoms included in the GaN/InGaN multi-quantum well active layer 105 have a concentration of 3.0×1017 cm?3 or less.

Abstract: Provided is a gallium nitride-based compound semiconductor light-emitting element, in which the concentration of Mg which is a p-type dopant in a p-GaN layer in which the (10-10) m-plane of a hexagonal wurtzite structure grows is adjusted in a range from 1.0×1018 cm?3 to 9.0×1018 cm?3.

Abstract: InyGa1-yN (0<y<1) layers whose principal surface is a non-polar plane or a semi-polar plane are formed by an MOCVD under different growth conditions. Then, the relationship between the growth temperature and the In supply mole fraction in a case where the pressure and the growth rate are constant is determined based on a growth condition employed for formation of InxGa1-xN (0<x<1) layers whose emission wavelengths are equal among the InyGa1-yN layers. Then, a saturation point is determined on a curve representing the relationship between the growth temperature and the In supply mole fraction, the saturation point being between a region where the growth temperature monotonically increases according to an increase of the In supply mole fraction and a region where the growth temperature saturates. Under a growth condition corresponding to this saturation point, an InxGa1-xN layer is grown.

Abstract: A nitride-based semiconductor light-emitting device according to the present invention has a nitride-based semiconductor multilayer structure 50a, which includes: an active layer 32 including an AlaInbGacN crystal layer (where a+b+c=1, a?0, b?0 and c?0); an AldGaeN overflow suppressing layer 36 (where d+e=1, d>0, and e?0); and an AlfGagN layer 38 (where f+g=1, f?0, g?0and f<d). The AldGaeN overflow suppressing layer 36 is arranged between the active layer 32 and the AlfGagN layer 38. The AldGaeN overflow suppressing layer 36 includes an In-doped layer 35 that is doped with In at a concentration of 1×1016 atms/cm3 to 8×1018 atms/cm3. A normal to the principal surface of the nitride-based semiconductor multilayer structure 50a defines an angle of 1 to 5 degrees with respect to a normal to an m plane.

Abstract: InyGa1-yN (0<y<1) layers whose principal surface is a non-polar plane or a semi-polar plane are formed by an MOCVD under different growth conditions. Then, the relationship between the growth temperature and the In supply mole fraction in a case where the pressure and the growth rate are constant is determined based on a growth condition employed for formation of InxGa1-xN (0<x<1) layers whose emission wavelengths are equal among the InyGa1-yN layers. Then, a saturation point is determined on a curve representing the relationship between the growth temperature and the In supply mole fraction, the saturation point being between a region where the growth temperature monotonically increases according to an increase of the In supply mole fraction and a region where the growth temperature saturates. Under a growth condition corresponding to this saturation point, an InxGa1-xN layer is grown.

Abstract: A nitride-based semiconductor light-emitting device 100 includes a GaN substrate 10, of which the principal surface is an m-plane 12, a semiconductor multilayer structure 20 that has been formed on the m-plane 12 of the GaN-based substrate 10, and an electrode 30 arranged on the semiconductor multilayer structure 20. The electrode 30 includes an Mg layer 32, which contacts with the surface of a p-type semiconductor region in the semiconductor multilayer structure 20.

Abstract: A nitride semiconductor layer formation method includes the steps of: (S1) placing a substrate in a reaction chamber, the substrate including a ?r-plane nitride semiconductor crystal at least in an upper surface; (S2) increasing a temperature of the substrate by heating the substrate placed in the reaction chamber; and (S3) growing a nitride semiconductor layer on the substrate. In the temperature increasing step (S2), a nitrogen source gas and a Group III element source gas are supplied into the reaction chamber.

Abstract: A nitride-based semiconductor light-emitting device 31 includes: an n-type GaN substrate 1 which has an m-plane principal surface; a current diffusing layer 7 provided on the n-type GaN substrate 1; an n-type nitride semiconductor layer 2 provided on the current diffusing layer 7; an active layer 3 provided on the n-type nitride semiconductor layer 2; a p-type nitride semiconductor layer 4 provided on the active layer 3; a p-electrode 5 which is in contact with the p-type nitride semiconductor layer 4; and an n-electrode 6 which is in contact with the n-type GaN substrate 1 or the n-type nitride semiconductor layer 2. The donor impurity concentration of the n-type nitride semiconductor layer 2 is not more than 5×1018 cm?3, and the donor impurity concentration of the current diffusing layer 7 is ten or more times the donor impurity concentration of the n-type nitride semiconductor layer 2.

Abstract: The present invention is a method of manufacturing a gallium nitride-based compound semiconductor, including growing an m-plane InGaN layer whose emission peak wavelength is not less than 500 nm by metalorganic chemical vapor deposition. Firstly, step (A) of heating a substrate in a reactor is performed. Then, step (B) of supplying into the reactor a gas which contains an In source gas, a Ga source gas, and a N source gas and growing an m-plane InGaN layer of an InxGa1-xN crystal on the substrate at a growth temperature from 700° C. to 775° C. is performed. In step (B), the growth rate of the m-plane InGaN layer is set in a range from 4.5 nm/min to 10 nm/min.

Abstract: A nitride-based semiconductor light-emitting device 100 includes a GaN substrate 10, of which the principal surface is an m-plane 12, a semiconductor multilayer structure 20 that has been formed on the m-plane 12 of the GaN-based substrate 10, and an electrode 30 arranged on the semiconductor multilayer structure 20. The electrode 30 includes an Mg layer 32, which contacts with the surface of a p-type semiconductor region in the semiconductor multilayer structure 20.

Abstract: A nitride-based semiconductor light-emitting device 100 includes a GaN substrate 10, of which the principal surface is an m-plane 12, a semiconductor multilayer structure 20 that has been formed on the m-plane 12 of the GaN-based substrate 10, and an electrode 30 arranged on the semiconductor multilayer structure 20. The electrode 30 includes an Mg alloy layer 32 which is formed of Mg and a metal selected from a group consisting of Pt, Mo, and Pd. The Mg alloy layer 32 is in contact with a surface of a p-type semiconductor region of the semiconductor multilayer structure 20.

Abstract: A nitride semiconductor layer formation method includes the steps of: (S1) placing a substrate in a reaction chamber, the substrate including an m-plane nitride semiconductor crystal at least in an upper surface; (S2) increasing a temperature of the substrate by heating the substrate placed in the reaction chamber; and (S3) growing a nitride semiconductor layer on the substrate. In the temperature increasing step (S2), a nitrogen source gas and a Group III element source gas are supplied into the reaction chamber, whereby an m-plane nitride semiconductor crystal having a smooth surface can be formed even if the thickness of the layer is 400 nm, and its growth time can be greatly decreased.

Abstract: A nitride-based semiconductor light-emitting device 100 includes a GaN substrate 10, of which the principal surface is an m-plane 12, a semiconductor multilayer structure 20 that has been formed on the m-plane 12 of the GaN-based substrate 10, and an electrode 30 arranged on the semiconductor multilayer structure 20. The electrode 30 includes an Mg layer 32, which contacts with the surface of a p-type semiconductor region in the semiconductor multilayer structure 20.

Abstract: A method for fabricating a semiconductor device according to the present invention includes the steps of: growing a p-type gallium nitride-based compound semiconductor layer by performing a metalorganic chemical vapor deposition process in a heated atmosphere so that the crystal-growing plane of the semiconductor layer is an m plane (Step S13); and cooling the p-type gallium nitride-based compound semiconductor layer (Step S14) after the step of growing has been carried out. The step of growing includes supplying hydrogen gas to a reaction chamber in which the p-type gallium nitride-based compound semiconductor layer is grown. The step of cooling includes cooling the p-type gallium nitride-based compound semiconductor layer with the supply of the hydrogen gas to the reaction chamber cut off.

Abstract: A nitride-based semiconductor light-emitting device 100 includes a GaN substrate 10, of which the principal surface is an m-plane 12, a semiconductor multilayer structure 20 that has been formed on the m-plane 12 of the GaN-based substrate 10, and an electrode 30 arranged on the semiconductor multilayer structure 20. The electrode 30 includes an Mg alloy layer 32 which is formed of Mg and a metal selected from a group consisting of Pt, Mo, and Pd. The Mg alloy layer 32 is in contact with a surface of a p-type semiconductor region of the semiconductor multilayer structure 20.

Abstract: A light-emitting device according to the present invention includes a plurality of columnar semiconductors 30 arranged on a GaN substrate 7, and a plurality of protrusions 13 formed on a side face of each columnar semiconductor 30. Each columnar semiconductor 30 has a light-emitting portion composed of a nitride compound semiconductor, and is supported by the GaN substrate 7 at a lower end. The columnar semiconductor 30 has a multilayer structure including an n-cladding layer 9, an active layer 10, and a p-cladding layer 11, the active layer 10 having a multi-quantum well structure in which InWGa1-WN (0<W<1) well layers and GaN barrier layers are alternately deposited.