Patents by Inventor Ryu Nakano
Ryu Nakano has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 9123510Abstract: A method for controlling in-plane uniformity of a substrate processed by plasma-assisted process in a reactor, includes: supplying a principal gas to a reaction space, and discharging radially the principal gas from the reaction space through an annular duct; and supplying an secondary gas to the reaction space from an area in close proximity to an outer periphery of a susceptor, outside an outer circumference of the substrate as viewed from above, so as to flow at least partially in an inward direction passing the outer circumference of the substrate, reversing the direction of the secondary gas to flow toward the annular duct in a vicinity of the outer circumference of the substrate, and discharging radially the secondary gas together with the principal gas from the reaction space through the annular duct.Type: GrantFiled: June 12, 2013Date of Patent: September 1, 2015Assignee: ASM IP HOLDING, B.V.Inventors: Ryu Nakano, Naoki Inoue
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Publication number: 20150147875Abstract: The present disclosure relates to the deposition of dopant films, such as doped silicon oxide films, by atomic layer deposition processes. In some embodiments, a substrate in a reaction space is contacted with pulses of a silicon precursor and a dopant precursor, such that the silicon precursor and dopant precursor adsorb on the substrate surface. Oxygen plasma is used to convert the adsorbed silicon precursor and dopant precursor to doped silicon oxide.Type: ApplicationFiled: September 30, 2014Publication date: May 28, 2015Inventors: Noboru Takamure, Atsuki Fukazawa, Hideaki Fukuda, Antti Niskanen, Suvi Haukka, Ryu Nakano, Kunitoshi Namba
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Publication number: 20150118846Abstract: A method for trimming a carbon-containing film includes: (i) providing a substrate having a carbon-containing film formed thereon; (ii) supplying a trimming gas and a rare gas to the reaction space, which trimming gas includes an oxygen-containing gas; and (iii) applying RF power between the electrodes to generate a plasma using the trimming gas and the rare gas and to thereby trim the carbon-containing film while controlling a trimming rate at 55 nm/min or less as a function of at least one parameter selected from the group consisting of a flow rate of an oxygen-containing gas, a flow rate of nitrogen-containing gas to be added to the oxygen-containing gas, pressure in the reaction space, RF power, a duty cycle of RF power, a distance between the electrodes, and a temperature of a susceptor on which the substrate is placed.Type: ApplicationFiled: October 28, 2013Publication date: April 30, 2015Applicant: ASM IP Holding B.V.Inventors: Yoshihiro Isii, Ryu Nakano, Naoki Inoue
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Publication number: 20150079311Abstract: A method for forming an oxide film by plasma-assisted processing includes: (i) supplying a precursor reactive to none of oxygen, CxOy, and NxOy (x and y are integers) without a plasma to a reaction space wherein a substrate is placed; (ii) exposing the precursor to a plasma of CxOy and/or NxOy in the reaction space; and (iii) forming an oxide film on the substrate using the precursor and the plasma.Type: ApplicationFiled: September 19, 2013Publication date: March 19, 2015Applicant: ASM IP Holding B.V.Inventors: Ryu Nakano, Naoki Inoue
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Publication number: 20150017794Abstract: The present disclosure relates to the deposition of dopant films, such as doped silicon oxide films, by atomic layer deposition processes. In some embodiments, a substrate in a reaction space is contacted with pulses of a silicon precursor and a dopant precursor, such that the silicon precursor and dopant precursor adsorb on the substrate surface. Oxygen plasma is used to convert the adsorbed silicon precursor and dopant precursor to doped silicon oxide.Type: ApplicationFiled: February 19, 2014Publication date: January 15, 2015Applicant: ASM International. N.V.Inventors: Noboru Takamure, Atsuki Fukazawa, Hideaki Fukuda, Antti Niskanen, Suvi Haukka, Ryu Nakano, Kunitoshi Namba
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Publication number: 20140367359Abstract: A method for controlling in-plane uniformity of a substrate processed by plasma-assisted process in a reactor, includes: supplying a principal gas to a reaction space, and discharging radially the principal gas from the reaction space through an annular duct; and supplying an secondary gas to the reaction space from an area in close proximity to an outer periphery of a susceptor, outside an outer circumference of the substrate as viewed from above, so as to flow at least partially in an inward direction passing the outer circumference of the substrate, reversing the direction of the secondary gas to flow toward the annular duct in a vicinity of the outer circumference of the substrate, and discharging radially the secondary gas together with the principal gas from the reaction space through the annular duct.Type: ApplicationFiled: June 12, 2013Publication date: December 18, 2014Inventors: Ryu Nakano, Naoki Inoue
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Patent number: 8742668Abstract: A method for stabilizing plasma ignition in a continuous process conducted on a substrate, includes: applying a spike of RF power between an upper electrode and a lower electrode on which the substrate is placed, wherein the spike starts from zero power, jumps to a spike power, and then drops to a base power which is so low as to cause plasma ignition failure; and continuously applying RF power at the base power between the upper and lower electrode for a duration substantially longer than a duration of the spike to process the substrate. The spike is such that ignition failure is reduced.Type: GrantFiled: September 5, 2012Date of Patent: June 3, 2014Assignee: ASM IP Holdings B.V.Inventors: Ryu Nakano, Tsutomu Makino, Hisashi Takamizawa
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Patent number: 8679958Abstract: The present disclosure relates to the deposition of dopant films, such as doped silicon oxide films, by atomic layer deposition processes. In some embodiments, a substrate in a reaction space is contacted with pulses of a silicon precursor and a dopant precursor, such that the silicon precursor and dopant precursor adsorb on the substrate surface. Oxygen plasma is used to convert the adsorbed silicon precursor and dopant precursor to doped silicon oxide.Type: GrantFiled: November 2, 2012Date of Patent: March 25, 2014Assignee: ASM International N.V.Inventors: Noboru Takamure, Atsuki Fukazawa, Hideaki Fukuda, Antti Niskanen, Suvi Haukka, Ryu Nakano, Kunitoshi Namba
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Publication number: 20140062304Abstract: A method for stabilizing plasma ignition in a continuous process conducted on a substrate, includes: applying a spike of RF power between an upper electrode and a lower electrode on which the substrate is placed, wherein the spike starts from zero power, jumps to a spike power, and then drops to a base power which is so low as to cause plasma ignition failure; and continuously applying RF power at the base power between the upper and lower electrode for a duration substantially longer than a duration of the spike to process the substrate. The spike is such that ignition failure is reduced.Type: ApplicationFiled: September 5, 2012Publication date: March 6, 2014Applicant: ASM IP HOLDING B.V.Inventors: Ryu Nakano, Tsutomu Makino, Hisashi Takamizawa
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Patent number: 8298951Abstract: A method of forming side spacers upwardly extending from a substrate, includes: providing a template constituted by a photoresist formed on and in contact with an etch-selective layer laminated on a substrate; anisotropically etching the template in a thickness direction with an oxygen-containing plasma to remove a footing of the photoresist and an exposed portion of the underlying layer; depositing a spacer film on the template by atomic layer deposition (ALD); and forming side spacers using the spacer film by etching. The etch-selective layer has a substantially lower etch rate than that of the photoresist.Type: GrantFiled: April 13, 2011Date of Patent: October 30, 2012Assignee: ASM Japan K.K.Inventor: Ryu Nakano
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Publication number: 20120264305Abstract: A method of forming side spacers upwardly extending from a substrate, includes: providing a template constituted by a photoresist formed on and in contact with an etch-selective layer laminated on a substrate; anisotropically etching the template in a thickness direction with an oxygen-containing plasma to remove a footing of the photoresist and an exposed portion of the underlying layer; depositing a spacer film on the template by atomic layer deposition (ALD); and forming side spacers using the spacer film by etching. The etch-selective layer has a substantially lower etch rate than that of the photoresist.Type: ApplicationFiled: April 13, 2011Publication date: October 18, 2012Applicant: ASM JAPAN K.K.Inventor: Ryu Nakano
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Patent number: 7972961Abstract: A method of processing semiconductor substrates includes: depositing a film on a substrate in a reaction chamber; evacuating the reaction chamber without purging the reaction chamber; opening a gate valve and replacing the substrate with a next substrate via the transfer chamber wherein the pressure of the transfer chamber is controlled to be higher than that of the reaction chamber before and while the gate valve is opened; repeating the above steps and removing the substrate from the reaction chamber; and purging and evacuating the reaction chamber, and cleaning the reaction chamber with a cleaning gas.Type: GrantFiled: October 9, 2008Date of Patent: July 5, 2011Assignee: ASM Japan K.K.Inventors: Toru Sugiyama, Ryu Nakano
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Patent number: 7829159Abstract: A method of forming an organosilicon oxide film by plasma CVD includes: (i) adjusting a temperature of a susceptor on which a substrate is placed to lower than 300° C.; (ii) introducing at least tetraethylorthosilicate (TEOS) and oxygen into a reactor in which the susceptor is disposed; (iii) applying high-frequency RF power and low-frequency RF power; and (iv) thereby depositing an organosilicon oxide film on the substrate.Type: GrantFiled: January 4, 2006Date of Patent: November 9, 2010Assignee: ASM Japan K.K.Inventor: Ryu Nakano
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Patent number: 7712435Abstract: A plasma processing apparatus includes: a reaction chamber; two electrodes provided inside the reaction chamber for generating a plasma therebetween, wherein at least one of the electrodes has at least one gas inlet pore through which a gas is introduced into the reaction chamber; and a gas inlet pipe coupled to the gas inlet pore for introducing the gas into the reaction chamber. The gas inlet pipe is grounded and insulated from the gas inlet pore, wherein an insulation member is placed inside the gas inlet pipe and the gas inlet pore.Type: GrantFiled: September 28, 2005Date of Patent: May 11, 2010Assignee: ASM Japan K.K.Inventors: Yu Yoshizaki, Ryu Nakano
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Publication number: 20100093181Abstract: A method of processing semiconductor substrates includes: depositing a film on a substrate in a reaction chamber; evacuating the reaction chamber without purging the reaction chamber; opening a gate valve and replacing the substrate with a next substrate via the transfer chamber wherein the pressure of the transfer chamber is controlled to be higher than that of the reaction chamber before and while the gate valve is opened; repeating the above steps and removing the substrate from the reaction chamber; and purging and evacuating the reaction chamber, and cleaning the reaction chamber with a cleaning gas.Type: ApplicationFiled: October 9, 2008Publication date: April 15, 2010Applicant: ASM JAPAN K.K.Inventors: Toru Sugiyama, Ryu Nakano
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Publication number: 20090155488Abstract: Methods and apparatuses for plasma chemical vapor deposition (CVD). In particular, a plasma CVD apparatus having a cleaning function, has an improved shower plate with holes having a uniform cross-sectional area to yield a high cleaning rate. The shower plate may serve as an electrode, and may have an electrically conductive extension connected to a power source. The shower plate, through which both cleaning gases and reaction source gases flow, may include a hole machined surface area with a size different than conventionally used to ensure a good film thickness uniformity during a deposition process. The size of the hole machined surface area may vary based on the size of a substrate to be processed, or the size of the entire surface of the shower plate.Type: ApplicationFiled: December 18, 2007Publication date: June 18, 2009Applicant: ASM JAPAN K.K.Inventors: Ryu Nakano, Hideaki Fukuda
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Publication number: 20070266945Abstract: A plasma CVD apparatus for forming a thin film on a substrate includes: a vacuum chamber; an upper electrode; a susceptor as a lower electrode; and a ring-shaped insulation plate disposed in a gap between the susceptor and an inner wall of the chamber in the vicinity of or in contact with the susceptor to minimize a floating potential charged on the substrate while processing the substrate.Type: ApplicationFiled: May 14, 2007Publication date: November 22, 2007Applicant: ASM JAPAN K.K.Inventors: Mitsutoshi Shuto, Yasushi Fukasawa, Ryu Nakano, Yasuaki Suzuki
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Publication number: 20070141273Abstract: A method of forming an organosilicon oxide film by plasma CVD includes: (i) adjusting a temperature of a susceptor on which a substrate is placed to lower than 300° C.; (ii) introducing at least tetraethylorthosilicate (TEOS) and oxygen into a reactor in which the susceptor is disposed; (iii) applying high-frequency RF power and low-frequency RF power; and (iv) thereby depositing an organosilicon oxide film on the substrate.Type: ApplicationFiled: January 4, 2006Publication date: June 21, 2007Applicant: ASM JAPAN K.K.Inventor: Ryu Nakano
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Publication number: 20060137610Abstract: A plasma processing apparatus includes: a reaction chamber; two electrodes provided inside the reaction chamber for generating a plasma therebetween, wherein at least one of the electrodes has at least one gas inlet pore through which a gas is introduced into the reaction chamber; and a gas inlet pipe coupled to the gas inlet pore for introducing the gas into the reaction chamber. The gas inlet pipe is grounded and insulated from the gas inlet pore, wherein an insulation member is placed inside the gas inlet pipe and the gas inlet pore.Type: ApplicationFiled: September 28, 2005Publication date: June 29, 2006Applicant: ASM JAPAN K.K.Inventors: Yu Yoshizaki, Ryu Nakano
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Patent number: 7037855Abstract: A method of forming low-dielectric-constant silicon oxide films by capacitive-coupled plasma CVD comprises: introducing a processing gas comprising SiH4 as a silicon source gas, SiF4 as a fluorine source gas, and CO2 as an oxidizing gas to a reaction chamber at a ratio of (SiH4+SiF4)/CO2 in the range of 0.02 to 0.2 and at a total pressure of 250 Pa to 350 Pa; applying first RF power at a frequency of 10 MHz to 30 MHz and second RF power at a frequency of 400 kHz to 500 kHz by overlaying the two RF powers to generate a plasma reaction field within the reaction chamber; and controlling a flow of the respective gases and the respective RF power outputs.Type: GrantFiled: August 31, 2004Date of Patent: May 2, 2006Assignee: ASM Japan K.K.Inventors: Naoto Tsuji, Yozo Ikedo, Ryu Nakano, Shuzo Hebiguchi