Abstract: A semiconductor device allowing simplification of a fabrication process is provided. This semiconductor device comprises a first insulator film, consisting of a single material, formed to be in contact with the upper surface of a semiconductor chip including a circuit, a first wire formed to be in contact with the upper surface of the first insulator film and a second wire formed to extend along the side surface and the lower surface of the semiconductor chip and connected to the lower surface of the first wire exposed by partially removing the first insulator film.

Abstract: A solid-state image sensor capable of suppressing color mixture while suppressing increase of load capacitances of transfer gates and a short circuit between two adjacent transfer gates is provided. This solid-state image sensor comprises a plurality of transfer gates and a shielding material line blocking light incident from above a prescribed pixel upon another pixel adjacent to the prescribed pixel. The shielding material line has a downward projecting portion on a region corresponding to at least one transfer gate entering an ON-state in photoreception.

Abstract: A solid-state imaging apparatus allowing miniaturization in a structure having a lens provided between a substrate and a color filter layer is provided. This solid-state imaging apparatus comprises a photodetection part formed on the substrate, the color filter layer formed on the substrate and the lens formed between the substrate and the color filter layer for concentrating light on the photodetection part. The lens has an upwardly projecting upper surface portion, while the upper end of the upper surface portion substantially comes into contact with the lower surface of the color filter layer.

Abstract: A solid state imaging device includes photoelectric conversion portions for performing photoelectric conversion, and transfer portions for transferring signal charge occurring at the photoelectric conversion portions. Each transfer portion includes a transfer electrode formed of polysilicon film or the like, and an insulating coating film formed of a material such as a silicon nitride film and so forth, which has a higher relative dielectric constant than that of the silicon oxide, for coating the bottom face, the upper face, and both side faces, of the transfer electrode. The silicon nitride film is formed with a film thickness which is greater than 0 nm and smaller than 60 nm, on both sides of the transfer electrode.

Abstract: A solid-state imaging device capable of suppressing deterioration of the image quality is provided. This solid-state imaging device comprises a substrate provided with a photodetection area, a color filter layer formed above the photodetection area and a lens formed between the substrate and the color filter layer for condensing light on the photodetection area. The lens has a substantially flat upper surface portion, and the ratio (w/t) of the width w of the substantially flat upper surface portion of the lens to the thickness t of the lens is not more than about 0.86.

Abstract: When forming the interconnect trench by “via first” method of the dual damascene process, after providing a via hole in the interlayer dielectric film 11, the anti-reflection coating 5 and the resist layer 6 are formed such that whichever has a faster etching rate in the formation process of the interconnect trench, out of the anti-reflection coating 5 and the resist layer 6, is disposed at the same level as a bottom portion of the interconnect trench to be formed through the formation process thereof.

Abstract: A solid-state imaging apparatus allowing miniaturization in a structure having a lens provided between a substrate and a color filter layer is provided. This solid-state imaging apparatus comprises a photodetection part formed on the substrate, the color filter layer formed on the substrate and the lens formed between the substrate and the color filter layer for concentrating light on the photodetection part. The lens has an upwardly projecting upper surface portion, while the upper end of the upper surface portion substantially comes into contact with the lower surface of the color filter layer.

Abstract: A semiconductor device allowing simplification of a fabrication process is provided. This semiconductor device comprises a first insulator film, consisting of a single material, formed to be in contact with the upper surface of a semiconductor chip including a circuit, a first wire formed to be in contact with the upper surface of the first insulator film and a second wire formed to extend along the side surface and the lower surface of the semiconductor chip and connected to the lower surface of the first wire exposed by partially removing the first insulator film.

Abstract: A solid-state image pickup device improvable in photosensitivity also in the vicinity of an end of a substrate is provided. This solid-state image pickup device comprises a photodetection part formed on a substrate, a color filter layer and a lens, formed between the substrate and the color filter for condensing light on the photodetection part, having a lens center deviated from the center of the photodetection part by a prescribed distance.

Abstract: When forming the interconnect trench by “via first” method of the dual damascene process, after providing a via hole in the interlayer dielectric film 11, the anti-reflection coating 5 and the resist layer 6 are formed such that whichever has a faster etching rate in the formation process of the interconnect trench, out of the anti-reflection coating 5 and the resist layer 6, is disposed at the same level as a bottom portion of the interconnect trench to be formed through the formation process thereof.

Abstract: A photomask for use in photolithographic processing performed to manufacture a semiconductor device. The photomask includes four square regions, each having a mask pattern. The four mask patterns are used successively and re formed so that the photomask is used oriented in substantially the same direction.

Abstract: A lift-off method for fine patterning includes the steps of: applying a photoresist layer to a substrate; implanting ions into predetermined regions in a surface layer of the photoresist layer; irradiating the photoresist layer with ultraviolet from above; developing the photoresist layer to form a resist pattern for lift-off; depositing a desired material with a predetermined thickness from above the resist pattern; and removing the resist pattern, thereby lifting off the material on the resist pattern, whereby a fine pattern of the desired material is left on the substrate.