Abstract: An infrared detecting capacitor formed of a ferroelectric film has its capacitor portion supported by first and second interconnecting lines to be held on an Si substrate located on both sides of a trench. A lower electrode is coupled with the first interconnecting line while an upper electrode is coupled with the second interconnecting line. The capacitor portion is a rectangle in shape in plan view without small triangular sections opposite to each other in the diagonal direction.

Abstract: An infrared detecting capacitor formed of a ferroelectric film has its capacitor portion supported by first and second interconnecting lines to be held on an Si substrate located on both sides of a trench. A lower electrode is coupled with the first interconnecting line while an upper electrode is coupled with the second interconnecting line. The capacitor portion is a rectangle in shape in plan view without small triangular sections opposite to each other in the diagonal direction.

Abstract: An infrared sensor is provided with a thermopile formed with a plurality of thermocouples connected to each other. The thermopile includes hot junctions, cold junctions, and thermoelectric patterns. The thermoelectric patterns are made of thermoelectric materials differing from each other. The hot junctions and the cold junctions are made of a bonding material which differs from the thermoelectric materials. A temperature-compensation resistor film is formed at a corner of the surface of a substrate on which the thermopile is formed, the temperature-compensation resistor film being made of the same material as the bonding material used for the hot junctions and the cold junctions.

Abstract: A thin film formation apparatus includes a vacuum chamber, a target holding mount held movably in the vacuum chamber, a target containing a film material, an ArF excimer laser for emitting high energy radiation to a surface of the target, an optical system for concentrating the radiation from the excimer laser to the surface of the target, a substrate holding mount holding the substrate, an oxidizing gas inlet for supplying an oxidizing gas into the vacuum chamber for oxidizing a substance deposited on the substrate, a heater placed inside the substrate holding mount for heating the substrate in the vacuum chamber, and a light for irradiating the substrate held on the substrate holding mount with light rays.

Abstract: An infrared detecting capacitor formed of a ferroelectric film has its capacitor portion supported by first and second interconnecting lines to be held on an Si substrate located on both sides of a trench. A lower electrode is coupled with the first interconnecting line while an upper electrode is coupled with the second interconnecting line. The capacitor portion is a rectangle in shape in plan view without small triangular sections opposite to each other in the diagonal direction.

Abstract: The heat conductance of the heat transfer route through which heat flows into a heat sink from the central region and its neighborhood of an absorbent via the edge region of the absorbent is made to be smaller, by making the absorbent have such a form that the film thickness of the edge region of the pattern of the infrared absorbent formed on the surface of a temperature sensing part is smaller than that of the central region of the pattern. Efficient temperature rise of a temperature sensing part is realized.

Abstract: An infrared sensor is provided, which includes a substrate 12, a diaphragm 14 supported by the substrate, at least one thermocouple 17 provided with a cold junction 20 formed on the substrate and a hot junction 18 formed on the diaphragm, and an infrared-absorptive film 24 formed on the diaphragm so as to cover the hot junction of the thermocouple. The area of the infrared-absorptive film is 64% to 100% of the area of the diaphragm.

Abstract: An infrared sensor is provided with a thermopile formed with a plurality of thermocouples connected to each other. The thermopile includes hot junctions, cold junctions, and thermoelectric patterns. The thermoelectric patterns are made of thermoelectric materials differing from each other. The hot junctions and the cold junctions are made of a bonding material which differs from the thermoelectric materials. A temperature-compensation resistor film is formed at a corner of the surface of a substrate on which the thermopile is formed, the temperature-compensation resistor film being made of the same material as the bonding material used for the hot junctions and the cold junctions.

Abstract: An infrared detecting capacitor formed of a ferroelectric film has its capacitor portion supported by first and second interconnecting lines to be held on an Si substrate located on both sides of a trench. A lower electrode is coupled with the first interconnecting line while an upper electrode is coupled with the second interconnecting line. The capacitor portion is a rectangle in shape in plan view without small triangular sections opposite to each other in the diagonal direction.

Abstract: A thin film formation apparatus includes a vacuum chamber, a target holding mount held movably in the vacuum chamber, a target containing a film material, an ArF excimer laser for emitting high energy radiation to a surface of the target, an optical system for concentrating the radiation from the excimer laser to the surface of the target, a substrate holding mount holding the substrate, an oxidizing gas inlet for supplying an oxidizing gas into the vacuum chamber for oxidizing a substance deposited on the substrate, a heater placed inside the substrate holding mount for heating the substrate in the vacuum chamber, and a light for irradiating the substrate held on the substrate holding mount with light rays.

Abstract: A thermal type infrared sensing device has; a plurality of light-receiving electrodes for outputting a change of surface charge associated with a polarization that occurs in a dielectric when subjected to infrared radiation; and a plurality of compensation electrodes, corresponding one for one to plurality of light-receiving electrodes, for compensating the outputs of corresponding light-receiving electrodes, and wherein plurality of compensation electrodes are formed on a different substrate from a substrate on which plurality of light-receiving electrodes are formed.