Abstract: A semiconductor integrated circuit (100) comprising: a plurality of processing circuits (11, 12, 13) each including a notification units for outputting a notification signal according to the processing state of the own processing circuit; a plurality of power supply switch units (SW1, SW2, SW3) for switching the connection states between the respective processing circuits and a power supply source; a power supply switch control circuit which is connected with the notification means (111, 121, 131), stores power supply control information (101) including a plurality of connection statuses, and controls the connection states on the basis of the notification signals and the power supply control information; and a data bus (BS) and the like connecting each of the processing circuits and the power supply switch control circuit, wherein: at least two or more of the plurality of processing circuits update the power supply control information via the data bus and the like before outputting a notification signal; and

Abstract: A semiconductor device includes a current control unit whose conductance is variable and a control unit configured to control the conductance of the current control unit. The current control unit is connected to a direct current power source in parallel with a load for the direct current power source, through a capacitor. The control unit sets the current control unit to a first conductance when the direct current power source and the load are not in a conduction state, and sets the current control unit to a second conductance larger than the first conductance when the direct current power source and the load are in the conduction state.

Abstract: In order to stably write data into a magnetic memory that uses in-plane current-induced perpendicular switching of magnetization to write data, the magnetic memory includes a recording layer formed as a perpendicular magnetization film, an adjacent layer joined to an upper surface or a lower surface of the recording layer, an external magnetic field application part configured to apply a first external magnetic field to the recording layer in a first direction which is an in-plane direction of the recording layer, and a current application part configured to allow a write current to flow through the adjacent layer in the first direction or a second direction which is opposite to the first direction. The external magnetic field application part is configured to switch a direction of a second external magnetic field applied in a direction perpendicular to the first direction in accordance with a direction of the write current.

Abstract: In a programmable logic integrated circuit, providing a spare circuit in preparation for the occurrence of a defective element results in a redundant circuit configuration. A programmable logic integrated circuit according to the present invention has: a plurality of logic blocks; a switch block for switching the connections between row and column wires by nonvolatile switch elements for switching; and a shifter block for connecting an input/output wire to said switch block. The shifter block includes a redundant wire and is equipped with nonvolatile switch elements for shifting that control the connections of the wires constituting said redundant wire and said row wires.

Abstract: In a programmable logic integrated circuit, providing a spare circuit in preparation for the occurrence of a defective element results in a redundant circuit configuration. A programmable logic integrated circuit according to the present invention has: a plurality of logic blocks; a switch block for switching the connections between row and column wires by nonvolatile switch elements for switching; and a shifter block for connecting an input/output wire to said switch block. The shifter block includes a redundant wire and is equipped with nonvolatile switch elements for shifting that control the connections of the wires constituting said redundant wire and said row wires.

Abstract: A nonvolatile logic gate device is configured to include a resistive network of a memory structure in which at least three nonvolatile resistive elements are connected, a reference resistive network as a reference resistance providing a tolerance of the memory structure to a resistance value of the resistive network of the memory structure, a writing part operable to selectively write or rewrite a value of each of the nonvolatile resistive elements in the resistive network into a maximum or a minimum corresponding to a logical value to be read when data are stored into the resistive network, and a logic circuit structure operable to use, as a logical value of the memory structure, a value obtained by comparison between the resistance value of the resistive network and the resistance value of the reference resistive network.

Abstract: Provided is a magnetic domain wall displacement memory cell, including a recording layer including a magnetic film, the recording layer including: a magnetization reversal region in which magnetization is reversible; and first and second magnetization fixed regions that supply a spin-polarized electron to the magnetization reversal region. The magnetic domain wall displacement memory cell is configured so that a first region in which magnetization reversal occurs due to a first current flowing in a direction parallel to a film surface of the recording layer and a first magnetic field component in the direction parallel to the film surface of the recording layer is formed, and a second region in which no magnetization reversal occurs is formed.

Abstract: In order to provide a technique for reducing an area of a content addressable memory cell and suppressing a leak current in a content addressable memory which calculates similarity, a content addressable memory cell of the present invention, comprising: a resistance network which includes plural current paths, a logic circuit for selecting a current path in response to input data, and a variable-resistance-type non-volatile memory element that is arranged on at least one current path and stores data and whose resistance value is changed according to a result of logical calculation based on the input data and the stored data; and a charge/discharge circuit which is connected with the resistance network and a match line and whose delay time from inputting a signal through the match line until outputting the signal is changed according to the result of logical calculation based on the input data and the stored data.

Abstract: Provided is a nonvolatile content addressable memory. Each word circuit includes a plurality of segments having an order relation. Each of the segments includes one or more memory cells. Each of the memory cells includes a nonvolatile storage element. Each of the segments includes a power switch for turning on/off a power of a memory cell of the segment. During stand-by, all the power switches are turned off, and, in search operation, the power switch is turned on as necessary for each of the segments.

Abstract: A semiconductor integrated circuit (100) comprising: a plurality of processing circuits (11, 12, 13) each including a notification units for outputting a notification signal according to the processing state of the own processing circuit; a plurality of power supply switch units (SW1, SW2, SW3) for switching the connection states between the respective processing circuits and a power supply source; a power supply switch control circuit which is connected with the notification means (111, 121, 131), stores power supply control information (101) including a plurality of connection statuses, and controls the connection states on the basis of the notification signals and the power supply control information; and a data bus (BS) and the like connecting each of the processing circuits and the power supply switch control circuit, wherein: at least two or more of the plurality of processing circuits update the power supply control information via the data bus and the like before outputting a notification signal; and

Abstract: A semiconductor device includes non-volatile registers, each including a holding circuit to hold data in a volatile manner and a non-volatile element. An address is allocated to each of the non-volatile registers. A non-volatile register control circuit performs control such that, in response to a write instruction, data held in the holding circuit is written to the non-volatile element in the non-volatile register having the address specified by the instruction and in response to a load instruction, data held in the non-volatile element is held in the holding circuit in the non-volatile register having the address specified by the instruction.

Abstract: Provided is a magnetic domain wall displacement memory cell, including a recording layer including a magnetic film, the recording layer including: a magnetization reversal region in which magnetization is reversible; and first and second magnetization fixed regions that supply a spin-polarized electron to the magnetization reversal region. The magnetic domain wall displacement memory cell is configured so that a first region in which magnetization reversal occurs due to a first current flowing in a direction parallel to a film surface of the recording layer and a first magnetic field component in the direction parallel to the film surface of the recording layer is formed, and a second region in which no magnetization reversal occurs is formed.

Abstract: Provided is a nonvolatile content addressable memory. Each word circuit includes a plurality of segments having an order relation. Each of the segments includes one or more memory cells. Each of the memory cells includes a nonvolatile storage element. Each of the segments includes a power switch for turning on/off a power of a memory cell of the segment. During stand-by, all the power switches are turned off, and, in search operation, the power switch is turned on as necessary for each of the segments.

Abstract: Provided is a nonvolatile resistor network assembly characterized by that: it comprises a first and a second resistor network which are each composed of a plurality of nonvolatile resistive elements connected together; it also comprises a write means for writing into the first and second resistor networks; and writing into the first and second resistor networks is performed by the use of the write means in a manner to make total resistances of respectively the first and second resistor networks different from each other. Further provided is a nonvolatile logic gate which performs logical operation using stored data determined by the total resistances of the respective nonvolatile resistor networks.

Abstract: A nonvolatile logic gate device is configured to include a resistive network of a memory structure in which at least three nonvolatile resistive elements are connected, a reference resistive network as a reference resistance providing a tolerance of the memory structure to a resistance value of the resistive network of the memory structure, a writing part operable to selectively write or rewrite a value of each of the nonvolatile resistive elements in the resistive network into a maximum or a minimum corresponding to a logical value to be read when data are stored into the resistive network, and a logic circuit structure operable to use, as a logical value of the memory structure, a value obtained by comparison between the resistance value of the resistive network and the resistance value of the reference resistive network.

Abstract: A semiconductor device includes a current control unit whose conductance is variable and a control unit configured to control the conductance of the current control unit. The current control unit is connected to a direct current power source in parallel with a load for the direct current power source, through a capacitor. The control unit sets the current control unit to a first conductance when the direct current power source and the load are not in a conduction state, and sets the current control unit to a second conductance larger than the first conductance when the direct current power source and the load are in the conduction state.

Abstract: Provided is a nonvolatile resistor network assembly characterized by that: it comprises a first and a second resistor network which are each composed of a plurality of nonvolatile resistive elements connected together; it also comprises a write means for writing into the first and second resistor networks; and writing into the first and second resistor networks is performed by the use of the write means in a manner to make total resistances of respectively the first and second resistor networks different from each other. Further provided is a nonvolatile logic gate which performs logical operation using stored data determined by the total resistances of the respective nonvolatile resistor networks.

Abstract: A magnetoresistive element 10 having a memory cell 100 according to the present invention contains a first lower terminal n1 and a second lower terminal n2 respectively connected to both ends of a conductive layer 3 whose longitudinal direction is different from the column direction (X direction). Further, the gates of the first transistors M1 respectively included in two memory cells among the plurality of memory cells 100 and adjacent to each other in a row direction (Y direction) are commonly connected to a first word line 14. As a result, without increase of the cell area, it becomes possible to reserve a margin in the dimension of the cell structure or in the process for MRMA.

Abstract: A semiconductor device comprises: reconfigurable logic circuit that includes plurality of resistance change elements; logical configuration of the reconfigurable logic circuit being decided depending on whether each of plurality of resistance change elements is in first resistance state or in second resistance state whose resistance value is lower than resistance value of first resistance state; resistance value monitor circuit that includes resistance change element pre-programmed to the first resistance state; the resistance value monitor circuit detecting whether or not pre-programmed resistance change element retains the first resistance state; and controller that, in case it is detected that resistance change element provided in resistance value monitor circuit doe not retain first resistance state, applies voltage used in programming from second resistance state to first resistance state to resistance change element retaining first resistance states, out of plurality of resistance change elements provid

Abstract: A semiconductor integrated circuit includes a plurality of first non-volatile registers including a retention circuit that retains volatile data and one or more non-volatile elements capable of retaining non-volatile data, and a second non-volatile register that retains a load enable bit that decides in which one of the plurality of first non-volatile registers data is loaded. The semiconductor integrated circuit also includes a non-volatile register control circuit that, when supply power is delivered from outside, loads to the retention circuit data retained by the non-volatile element(s) contained in the first non-volatile register specified by the load enable bit loaded from the second non-volatile register (FIG. 1).