Abstract: A composition for forming a resist underlayer film that enables the formation of a desired resist pattern; a method for producing a resist pattern, the method using this resist underlayer film-forming composition; and a method for producing a semiconductor device. The resist underlayer film-forming composition includes a solvent and a product of reaction between compound (A) represented by formula (100) below. In formula (100), Ar1 and Ar2 each independently represent a C6-C40 aromatic ring that may be substituted, at least one of Ar1 and Ar2 is a naphthalene ring, L1 represents a single bond, a C1-C10 alkylene group that may be substituted, or a C2-C10 alkenylene group that may be substituted, T1 and T2 each independently represent a single bond, an ester bond or an ether bond, and E represents an epoxy group) and compound (B) containing at least two groups having reactivity with an epoxy group.

Abstract: A silicon-containing underlayer film-forming composition that can form a self-assembled film wherein a desired vertical pattern is induced, and a pattern formation method using the composition. A composition for forming a silicon-containing underlayer film for a self-assembled film, the composition being characterized by including: a polysiloxane; and a solvent, but not including a strongly acidic additive.

Abstract: A protective film forming composition forms a flat film having good mask function against a wet etching liquid during a semiconductor substrate processing, high dry etching rate and good coverage of a substrate with level difference, while having small film thickness difference after embedding. A protective film is produced using this composition. A substrate has a resist pattern. A method produces a semiconductor device. A composition forms a protective film against a wet etching liquid for semiconductors, containing a solvent and a ring-opened polymer (C) obtained by reaction between a diepoxy compound (A) and a bi- or higher functional proton-generating compound (B). The ring-opened polymer (C) is preferably represented by a unit structure of formula (A-1). (In formula (A-1), Q represents a divalent organic group generated by the diepoxy compound (A) ring-opening polymerization; and T represents a divalent organic group derived from the bi- or higher functional proton-generating compound (B)).

Abstract: A composition for forming a resist underlayer film enables the formation of a desired resist pattern; and a method for forming a resist pattern using this resist underlayer film forming composition. A resist underlayer film forming composition contains an organic solvent and a polymer that has a structure represented by formula (1) or (2) at an end of the polymer chain. (In formula (1) and formula (2), X represents a divalent organic group; A represents an aryl group having 6-40 carbon atoms; R1 represents a halogen atom, an alkyl group having 1-40 carbon atoms or an alkoxy group having 1-40 carbon atoms; each of R2 and R3 independently represents a hydrogen atom, an optionally substituted alkyl group having 1-10 carbon atoms, an aryl group having 6-40 carbon atoms or a halogen atom; each of n1 and n3 independently represents an integer of 1-12; and n2 represents an integer of 0-11.

Abstract: A self-assembled film forming composition for forming a phase-separated structure of a block copolymer layer on a substrate, containing a block copolymer and a solvent, and is configured such that: the block copolymer is obtained by bonding a silicon-free polymer to a silicon-containing polymer that contains, as a constituent unit, styrene that is substituted by a silicon-containing group; the silicon-free polymer contains a structure derived from formula [1-1] or formula [1-2]; and the silicon-containing group contains one silicon atom. [In formula [1-1] or formula [1-2], each of R1 and R2 independently represents a hydrogen atom, a halogen atom or an alkyl group having 1-10 carbon atoms; and each of R3-R5 independently represents a hydrogen atom, a hydroxy group, a halogen atom, an alkyl group having 1-10 carbon atoms, an alkoxy group having 1-10 carbon atoms, a cyano group, an amino group, an amide group or a carbonyl group.

Abstract: A layer contains a block copolymer in which a microphase-separated structure of the block copolymer has been induced to be perpendicular to a substrate, the process being difficult to perform by means of heating at atmospheric pressure. A method produces this layer. A method produces a semiconductor device in which a vertically phase-separated block copolymer layer is used. The vertically phase-separated block copolymer layer is formed by heating under a pressure below atmospheric pressure and at a temperature at which induced self-assembly can occur. It is preferable that the vertical phase separation includes a lamellar portion. It is preferable that the lamellar portion includes PMMA. It is preferable that the heating temperature is 290° C. or higher. It is preferable to additionally have a layer, which neutralizes the surface energy of the block copolymer, beneath the block copolymer layer.

Abstract: An upper layer film-forming composition exhibits good solubility in hydrophobic solvents and can bring about vertical alignment of a block copolymer without dissolution, swelling or the like of a layer containing the block copolymer formed on a substrate. This upper layer film-forming composition is used for phase separation of a layer containing a block copolymer formed on a substrate, and contains: (A) a copolymer containing a unit structure derived from a maleimide structure (a) and a unit structure derived from a styrene structure; and (B) as a solvent, a non-aromatic hydrocarbon compound that is a liquid at normal temperature and pressure.

Abstract: A composition for forming a resist underlayer film that enables the formation of a desired resist pattern; and a method for producing a resist pattern and a method for producing a semiconductor device, each of which uses the resist underlayer film-forming composition. The resist underlayer film-forming composition comprises an organic solvent and the reaction product of (A) a hydantoin-containing compound that has two epoxy groups and (B) a hydantoin-containing compound different from (A). This reaction product is preferably the reaction product of a secondary amino group present in the hydantoin-containing compound (B) and the epoxy group present in the hydantoin-containing compound (A).

Abstract: A composition for forming a resist underlayer film that enables the formation of a desired resist pattern; a method for producing a resist pattern and producing a semiconductor device, which uses this composition for forming a resist underlayer film. A composition for forming an EUV resist underlayer film, said composition containing an organic solvent and a reaction product of a diepoxy compound and a compound represented by formula (1). (In formula (1), Y1 represents an alkylene group having from 1 to 10 carbon atoms, wherein at least one hydrogen atom is substituted by a fluorine atom; each of T1 and T2 independently represents a hydroxy group or a carboxy group; each of R1 and R2 independently represents an alkyl group having from 1-10 carbon atoms, said alkyl group being optionally substituted by a fluorine atom; and each of n1 and n2 independently represents an integer from 0 to 4.

Abstract: A layer including a block copolymer in which a microphase-separated structure of the block copolymer has been induced perpendicular to a substrate, this process being difficult in heating under atmospheric pressure; a method for producing the layer; and a method for producing a semiconductor device in which is used a vertically phase-separated layer of a block copolymer. A vertically phase-separated layer of a block copolymer formed by heating at a pressure below atmospheric pressure and a temperature at which induced self-assembly can occur.

Abstract: A composition for forming a resist underlayer film that enables the formation of a desired resist pattern, a method for manufacturing a resist pattern using the composition for forming a resist underlayer film and a method for manufacturing a semiconductor device. This composition for forming an EUV resist underlayer film includes a polymer that contains a structure represented by formula (1) at an end [in formula (1): X1 represents —O—, —S—, an ester bond or an amide bond; R1 represents an optionally halogenated alkyl group having 1-20 carbon atoms; and * represents a binding portion to the polymer end] and an organic solvent.

Abstract: A film with reduced formation of an edge reservoir at a periphery of a film in which the edge reservoir causes an unnecessary residue that cannot be removed by an etching process, and a method for forming the film. A film forming composition for use in a lithography process includes a surfactant containing a polymer and an oligomer having a C3-5 perfluoroalkyl partial structure. The perfluoroalkyl partial structure may further include an alkyl partial structure. The surfactant is contained in an amount of 0.0001% by mass to 1.5% by mass based on the total solid content of the film forming composition. The film forming composition further includes a coating film resin, the coating film resin is a novolac resin, a condensation epoxy resin, a (meth)acylic resin, a polyether-based resin, or a silicon-containing resin, etc. The formed film can be used as a resist underlayer film or a resist overlayer film.

Abstract: Methods for forming a film with reduced formation of an edge reservoir at a periphery of a film in which the edge reservoir causes an unnecessary residue that cannot be removed by an etching process. A film forming composition for use in a lithography process includes a surfactant containing a polymer and an oligomer having a C3-5 perfluoroalkyl partial structure. The perfluoroalkyl partial structure may further include an alkyl partial structure. The surfactant is contained in an amount of 0.0001% by mass to 1.5% by mass based on the total solid content of the film forming composition. The film forming composition further includes a coating film resin, the coating film resin is a novolac resin, a condensation epoxy resin, a (meth)acrylic resin, a polyether-based resin, or a silicon-containing resin, etc. The formed film can be used as a resist underlayer film or a resist overlayer film.

Abstract: An underlayer film-forming composition which exhibits excellent solvent resistance, and which is capable of orthogonally inducing, with respect to a substrate, a microphase separation structure in a layer formed on the substrate, said layer including a block copolymer. The underlayer film-forming composition includes a copolymer which includes: (A) unit structures derived from styrene compounds including tert-butyl groups; (B) unit structures, other than those in (A) above, which are derived from aromatic-containing vinyl compounds which do not include hydroxy groups; (C) unit structures derived from compounds which include (meth)acryloyl groups, and do not include hydroxy groups; and (D) unit structures derived from compounds including crosslink-forming groups. The copolymerization ratios with respect to the whole copolymer are: (A) 25-90 mol %; (B) 0-65 mol %; (C) 0-65 mol %; and (D) 10-20 mol %. Unit structures including aromatics account for 81-90 mol % of (A)+(B)+(C).

Abstract: A composition for forming a resist underlayer film that enables the formation of a desired resist pattern; and a method for producing a resist pattern and a method for producing a semiconductor device, each of which uses the above-described resist underlayer film forming composition. A resist underlayer film forming composition which contains a polymer having, at an end, an aliphatic ring that may be substituted by a substituent, while having a carbon-carbon bond that may be interrupted by a heteroatom, and which additionally contains an organic solvent. The aliphatic ring is a monocyclic or polycyclic aliphatic ring having 3-10 carbon atoms. The polycyclic aliphatic ring is a bicyclic ring or a tricyclic ring.

Abstract: A protective film forming composition forms a flat film having good mask function against a wet etching liquid during a semiconductor substrate processing, high dry etching rate and good coverage of a substrate with level difference, while having small film thickness difference after embedding. A protective film is produced using this composition. A substrate has a resist pattern. A method produces a semiconductor device. A composition forms a protective film against a wet etching liquid for semiconductors, containing a solvent and a ring-opened polymer (C) obtained by reaction between a diepoxy compound (A) and a bi- or higher functional proton-generating compound (B). The ring-opened polymer (C) is preferably represented by a unit structure of formula (A-1). (In formula (A-1), Q represents a divalent organic group generated by the diepoxy compound (A) ring-opening polymerization; and T represents a divalent organic group derived from the bi- or higher functional proton-generating compound (B)).

Abstract: A composition for forming a resist underlayer film enables the formation of a desired resist pattern; and a method for forming a resist pattern using this resist underlayer film forming composition. A resist underlayer film forming composition contains an organic solvent and a polymer that has a structure represented by formula (1) or (2) at an end of the polymer chain. (In formula (1) and formula (2), X represents a divalent organic group; A represents an aryl group having 6-40 carbon atoms; R1 represents a halogen atom, an alkyl group having 1-40 carbon atoms or an alkoxy group having 1-40 carbon atoms; each of R2 and R3 independently represents a hydrogen atom, an optionally substituted alkyl group having 1-10 carbon atoms, an aryl group having 6-40 carbon atoms or a halogen atom; each of n1 and n3 independently represents an integer of 1-12; and n2 represents an integer of 0-11.

Abstract: A self-assembled film forming composition for forming a phase-separated structure of a block copolymer layer on a substrate, containing a block copolymer and a solvent, and is configured such that: the block copolymer is obtained by bonding a silicon-free polymer to a silicon-containing polymer that contains, as a constituent unit, styrene that is substituted by a silicon-containing group; the silicon-free polymer contains a structure derived from formula [1-1] or formula [1-2]; and the silicon-containing group contains one silicon atom. [In formula [1-1] or formula [1-2], each of R1 and R2 independently represents a hydrogen atom, a halogen atom or an alkyl group having 1-10 carbon atoms; and each of R3-R5 independently represents a hydrogen atom, a hydroxy group, a halogen atom, an alkyl group having 1-10 carbon atoms, an alkoxy group having 1-10 carbon atoms, a cyano group, an amino group, an amide group or a carbonyl group.

Abstract: A self-assembled film-forming composition for orthogonally inducing, with respect to a substrate, a microphase separation structure in a layer including a block copolymer, in the whole surface of a coating film, even at high heating temperatures at which arrangement failure of the microphase separation of the block copolymer occurs. The self-assembled film-forming composition includes a block copolymer, and at least two solvents having different boiling points as a solvent. The block copolymer is obtained by bonding: a non-silicon-containing polymer having, as a structural unit, styrene, a derivative thereof, or a structure derived from a lactide; and a silicon-containing polymer having, as a structural unit, styrene substituted with silicon-containing groups. The solvent includes: a low boiling point solvent (A) having a boiling point of 160° C. or lower; and a high boiling point solvent (B) having a boiling point of 170° C. or higher.

Abstract: Methods for forming a film with reduced formation of an edge reservoir at a periphery of a film in which the edge reservoir causes an unnecessary residue that cannot be removed by an etching process. A film forming composition for use in a lithography process includes a surfactant containing a polymer and an oligomer having a C3-5 perfluoroalkyl partial structure. The perfluoroalkyl partial structure may further include an alkyl partial structure. The surfactant is contained in an amount of 0.0001% by mass to 1.5% by mass based on the total solid content of the film forming composition. The film forming composition further includes a coating film resin, the coating film resin is a novolac resin, a condensation epoxy resin, a (meth)acrylic resin, a polyether-based resin, or a silicon-containing resin, etc. The formed film can be used as a resist underlayer film or a resist overlayer film.