Abstract: A resist underlayer film having, in particular, a high dry etching speed; the resist underlayer film formation composition; a resist pattern formation method, and a method for manufacturing a semiconductor device. The resist underlay film formation composition contains: a bifunctional or higher compound having one or more disulfide bonds; a trifunctional or higher compound and/or a reaction product; and a solvent. The bifunctional or higher compound is a dicarboxylic acid containing a disulfide bond. The trifunctional or higher compound is a compound containing three or more epoxy groups.

Abstract: An overlay film-forming composition used to cause phase separation to a block copolymer-containing layer formed on a substrate, the composition including: (A) a copolymer that includes (a) a unit structure derived from maleimide structure and a unit structure derived from styrene structure; and (B) an ether compound having 8-16 carbon atoms as a solvent. The overlay film-forming composition exhibits good solubility with respect to a hydrophobic solvent, and is able to induce vertical alignment of a block copolymer without causing dissolution, swelling, and the like of the block copolymer-containing layer formed on the substrate.

Abstract: A self-assembled film-forming composition for orthogonally inducing, with respect to a substrate, a microphase separation structure in a layer including a block copolymer, in the whole surface of a coating film, even at high heating temperatures at which arrangement failure of the microphase separation of the block copolymer occurs. The self-assembled film-forming composition includes a block copolymer, and at least two solvents having different boiling points as a solvent. The block copolymer is obtained by bonding: a non-silicon-containing polymer having, as a structural unit, styrene, a derivative thereof, or a structure derived from a lactide; and a silicon-containing polymer having, as a structural unit, styrene substituted with silicon-containing groups. The solvent includes: a low boiling point solvent (A) having a boiling point of 160° C. or lower; and a high boiling point solvent (B) having a boiling point of 170° C. or higher.

Abstract: An underlayer film-forming composition which exhibits excellent solvent resistance, and which is capable of orthogonally inducing, with respect to a substrate, a microphase separation structure in a layer formed on the substrate, said layer including a block copolymer. The underlayer film-forming composition includes a copolymer which includes: (A) unit structures derived from styrene compounds including tert-butyl groups; (B) unit structures, other than those in (A) above, which are derived from aromatic-containing vinyl compounds which do not include hydroxy groups; (C) unit structures derived from compounds which include (meth)acryloyl groups, and do not include hydroxy groups; and (D) unit structures derived from compounds including crosslink-forming groups. The copolymerization ratios with respect to the whole copolymer are: (A) 25-90 mol %; (B) 0-65 mol %; (C) 0-65 mol %; and (D) 10-20 mol %. Unit structures including aromatics account for 81-90 mol % of (A)+(B)+(C).

Abstract: An overlay film-forming composition used to cause phase separation to a block copolymer-containing layer formed on a substrate, the composition including: (A) a copolymer that includes (a) a unit structure derived from maleimide structure and a unit structure derived from styrene structure; and (B) an ether compound having 8-16 carbon atoms as a solvent. The overlay film-forming composition exhibits good solubility with respect to a hydrophobic solvent, and is able to induce vertical alignment of a block copolymer without causing dissolution, swelling, and the like of the block copolymer-containing layer formed on the substrate.

Abstract: An electron beam resist underlayer film-forming composition includes a polymer containing a unit structure having a lactone ring and a unit structure having a hydroxy group. The polymer may be a polymer obtained by copolymerizing a monomer mixture containing a lactone (meth)acrylate, a hydroxyalkyl (meth)acrylate, and phenyl (meth)acrylate or benzyl (meth)acrylate. A method for producing a semiconductor device including: applying the electron beam resist underlayer film-forming composition onto a substrate and heating the applied composition to form an electron beam resist underlayer film; coating the electron beam resist underlayer film with an electron beam resist; irradiating the substrate coated with the electron beam resist underlayer film and the electron beam resist with an electron beam; developing the substrate; and transferring an image onto the substrate by dry etching to form an integrated circuit element.

Abstract: The present invention provides a resist underlayer film that has a wide focus position range within which a good resist shape can be obtained. A resist underlayer film-forming composition for lithography comprising a linear polymer that is obtained by a reaction of a diepoxy group-containing compound (A) with a dicarboxyl group-containing compound (B). The linear polymer has structures of the following formulae (1), (2), and (3) derived from the diepoxy group-containing compound (A) or the dicarboxyl group-containing compound (B): The linear polymer preferably contains a polymer obtained by a reaction of two diepoxy group-containing compounds (A) each having structures of Formulae (1) and (2) with a dicarboxyl group-containing compound (B) having a structure of Formula (3), or a polymer obtained by a reaction of a diepoxy group-containing compound (A) having a structure of Formula (1) with two dicarboxyl group-containing compounds (B) each having structures of Formulae (2) and (3).

Abstract: There is provided a mask blank including on a substrate: a thin film for forming a transfer pattern; a resist underlayer formed on the thin film and made of a resist underlayer composition containing a polymer having a unit structure having a lactone ring and a unit structure having a hydroxyl group; a resist film formed on the resist underlayer film and made of a resist composition; and a mixed film formed so as to be interposed between the resist underlayer film and the resist film and made of a mixed component containing the resist underlayer composition and the resist composition.

Abstract: There is provided a mask blank including on a substrate: a thin film for forming a transfer pattern; a resist underlayer formed on the thin film and made of a resist underlayer composition containing a polymer having a unit structure having a lactone ring and a unit structure having a hydroxyl group; a resist film formed on the resist underlayer film and made of a resist composition; and a mixed film formed so as to be interposed between the resist underlayer film and the resist film and made of a mixed component containing the resist underlayer composition and the resist composition.

Abstract: A mask blank, including: a thin film for forming a transfer pattern; a resist underlying film made of a resist underlying composition and provided on the thin film; a resist film made of a chemically amplified resist and provided on the resist underlying film; and a mixture film provided so as to be interposed between the resist underlying film and the resist film, wherein the resist underlying film is configured so that a molecular weight is reduced from the thin film side to the resist film side in a thickness direction, and has a low molecular weight region in which the molecular weight is low on the resist film side surface, and the mixture film is formed by mixing a component of the low molecular weight region and a component of the chemically amplified resist.

Abstract: An electron beam resist underlayer film-forming composition includes a polymer containing a unit structure having a lactone ring and a unit structure having a hydroxy group. The polymer may be a polymer obtained by copolymerizing a monomer mixture containing a lactone (meth)acrylate, a hydroxyalkyl (meth)acrylate, and phenyl (meth)acrylate or benzyl (meth)acrylate. A method for producing a semiconductor device including: applying the electron beam resist underlayer film-forming composition onto a substrate and heating the applied composition to form an electron beam resist underlayer film; coating the electron beam resist underlayer film with an electron beam resist; irradiating the substrate coated with the electron beam resist underlayer film and the electron beam resist with an electron beam; developing the substrate; and transferring an image onto the substrate by dry etching to form an integrated circuit element.

Abstract: A film with reduced formation of an edge reservoir at a periphery of a film in which the edge reservoir causes an unnecessary residue that cannot be removed by an etching process, and a method for forming the film. A film forming composition for use in a lithography process includes a surfactant containing a polymer and an oligomer having a C3-5 perfluoroalkyl partial structure. The perfluoroalkyl partial structure may further include an alkyl partial structure. The surfactant is contained in an amount of 0.0001% by mass to 1.5% by mass based on the total solid content of the film forming composition. The film forming composition further includes a coating film resin, the coating film resin is a novolac resin, a condensation epoxy resin, a (meth)acylic resin, a polyether-based resin, or a silicon-containing resin, etc. The formed film can be used as a resist underlayer film or a resist overlayer film.

Abstract: A mask blank, including: a thin film for forming a transfer pattern; a resist underlying film made of a resist underlying composition and provided on the thin film; a resist film made of a chemically amplified resist and provided on the resist underlying film; and a mixture film provided so as to be interposed between the resist underlying film and the resist film, wherein the resist underlying film is configured so that a molecular weight is reduced from the thin film side to the resist film side in a thickness direction, and has a low molecular weight region in which the molecular weight is low on the resist film side surface, and the mixture film is formed by mixing a component of the low molecular weight region and a component of the chemically amplified resist.

Abstract: A composition for forming an antistatic film, includes: an oligomer compound of Formula (1A): (where R1 is a hydrogen atom or a group of Formula (2), each of R2 and R3 is independently a hydrogen atom, a group of Formula (3), or a group of Formula (4), at least one of the plurality of Rs is a sulfo group, a and b are positive integers satisfying 2?(a+b)?6; and each of a plurality of xs is independently an integer from 0 to 4): (where n is an integer satisfying 1?n<(a+b+4); a, b, a plurality of Rs, and x are the same as those in Formula (1A); and each of a plurality of ys is independently an integer from 0 to 5); and water.

Abstract: The present invention provides a resist underlayer film that has a wide focus position range within which a good resist shape can be obtained. A resist underlayer film-forming composition for lithography comprising a linear polymer that is obtained by a reaction of a diepoxy group-containing compound (A) with a dicarboxyl group-containing compound (B). The linear polymer has structures of the following formulae (1), (2), and (3) derived from the diepoxy group-containing compound (A) or the dicarboxyl group-containing compound (B): The linear polymer preferably contains a polymer obtained by a reaction of two diepoxy group-containing compounds (A) each having structures of Formulae (1) and (2) with a dicarboxyl group-containing compound (B) having a structure of Formula (3), or a polymer obtained by a reaction of a diepoxy group-containing compound (A) having a structure of Formula (1) with two dicarboxyl group-containing compounds (B) each having structures of Formulae (2) and (3).

Abstract: A composition for forming an antistatic film, includes: an oligomer compound of Formula (1A): (where R1 is a hydrogen atom or a group of Formula (2), each of R2 and R3 is independently a hydrogen atom, a group of Formula (3), or a group of Formula (4), at least one of the plurality of Rs is a sulfo group, a and b are positive integers satisfying 2?(a+b)?6; and each of a plurality of xs is independently an integer from 0 to 4): (where n is an integer satisfying 1?n<(a+b+4); a, b, a plurality of Rs, and x are the same as those in Formula (1A); and each of a plurality of ys is independently an integer from 0 to 5); and water.