Abstract: An etching method in accordance with the present disclosure includes providing a substrate, which includes a silicon-containing film, in a chamber; and etching the silicon-containing film with a chemical species in plasma generated from a process gas supplied in the chamber. The process gas includes a phosphorus gas component and a fluorine gas component.

Abstract: A technique improves selectivity in etching of a silicon-containing film over etching of a mask in plasma etching. A substrate processing method includes placing a substrate in a chamber in a plasma processing apparatus. The substrate includes a silicon-containing film and a mask on the silicon-containing film. The substrate processing method further includes generating plasma from a first process gas containing a hydrogen fluoride gas in the chamber. The generating plasma includes etching the silicon-containing film with a chemical species contained in the plasma. A flow rate of the hydrogen fluoride gas is at least 25 vol % of a total flow rate of the non-inert components of the first process gas.

Abstract: A technique improves selectivity in etching of a silicon-containing film over etching of a mask in plasma etching. A substrate processing method includes placing a substrate in a chamber in a plasma processing apparatus. The substrate includes a silicon-containing film and a mask on the silicon-containing film. The substrate processing method further includes generating plasma from a first process gas containing a hydrogen fluoride gas in the chamber. The generating plasma includes etching the silicon-containing film with a chemical species contained in the plasma. A flow rate of the hydrogen fluoride gas is at least 80 vol % of a total flow rate of non-inert components of the first process gas.

Abstract: A substrate processing method includes: (a) carrying a substrate having a first film with a recess, and a mask into a first chamber; (b) adjusting the substrate temperature to 200° C. or higher; (c-1) supplying silicon-containing reactive species into the first chamber, thereby adsorbing the species onto the side wall of the recess; and (c-2) supplying nitrogen-containing reactive species into the first chamber, thereby forming a second film on the side wall of the recess; (d) carrying the substrate into a second chamber; and (e) adjusting the substrate temperature to 100° C. or lower; and (f) etching the bottom of the recess. Further, (a) to (f) are repeated in this order until an aspect ratio of a depth dimension from the opening of the mask to the bottom of the recess becomes 50 or more.

Abstract: An etching method in accordance with the present disclosure includes providing a substrate, which includes a silicon-containing film, in a chamber; and etching the silicon-containing film with a chemical species in plasma generated from a process gas supplied in the chamber. The process gas includes a phosphorus gas component and a fluorine gas component.

Abstract: An etching method that is disclosed includes providing a substrate into a chamber. The substrate has a silicon-containing film including a silicon nitride film. The etching method includes generating plasma from a processing gas in the chamber to etch the silicon-containing film. The processing gas includes a fluorine-containing gas and a boron-containing gas. In the etching, a temperature of a substrate support supporting the substrate is set to a temperature of less than 0° C.

Abstract: A disclosed etching method includes (a) forming a protective film on a surface in a chamber. The etching method further includes (b) etching an etch film of a substrate by using hydrogen fluoride within the chamber. The substrate includes the etch film and a mask provided on the etch film. The protective film is formed of the same type of material as a material of the mask.

Abstract: An etching method is provided that includes: (a) providing a substrate including an etching target film on a substrate support stage arranged in a process chamber; (b) setting a temperature of the substrate support stage; (c) generating plasma from an etching gas;(d) increasing the temperature of the substrate; (e) decreasing the temperature of the substrate; and (f) repeating (d) and (e) a predetermined number of times.

Abstract: A substrate processing apparatus performs a method of etching a substrate that includes etching the substrate to form a first portion of a recess in the substrate, the first portion of the recess including a bottom surface and a sidewall. The method also includes forming an ammonium fluorosilicate (AFS) layer in or on the sidewall, and then etching the bottom surface to form a second portion of the recess. The etching the bottom surface is performed while maintaining protection of the sidewall with the AFS layer.

Abstract: A substrate processing apparatus performs a method of etching a substrate that includes etching the substrate to form a first portion of a recess in the substrate, the first portion of the recess including a bottom surface and a sidewall. The method also includes forming an ammonium fluorosilicate (AFS) layer in or on the sidewall, and then etching the bottom surface to form a second portion of the recess. The etching the bottom surface is performed while maintaining protection of the sidewall with the AFS layer.

Abstract: A technique improves selectivity in etching of a silicon-containing film over etching of a mask in plasma etching. A substrate processing method includes providing a substrate in a chamber in a plasma processing apparatus. The substrate includes a silicon-containing film and a mask on the silicon-containing film. The substrate processing method further includes controlling a temperature of a substrate support on which the substrate is placed to 0° C. or lower. The substrate processing method further includes etching the silicon-containing film with plasma generated from a first process gas containing a hydrogen fluoride gas and at least one carbon-containing gas selected from the group consisting of a fluorocarbon gas and a hydrofluorocarbon gas. The etching includes etching the film with a chemical species contained in the plasma. The hydrogen fluoride gas has a highest flow rate among non-inert components of the first process gas.

Abstract: An etching method include: etching a silicon-containing film or a metal-containing film formed on a substrate; and heating the substrate by temporarily irradiating the substrate with electromagnetic waves during the etching.

Abstract: An etching method includes: providing, on a stage, a substrate including an etching film containing a silicon oxide film, and a mask formed on the etching film; setting a temperature of the stage to be 0° C. or less; and generating plasma from a gas containing fluorine, nitrogen, and carbon, and having a ratio of the number of fluorine to the number of nitrogen (F/N) in a range of 0.5 to 10, thereby etching the silicon oxide film through the mask.

Abstract: A technique improves selectivity in etching of a silicon-containing film over etching of a mask in plasma etching. A substrate processing method includes placing a substrate in a chamber in a plasma processing apparatus. The substrate includes a silicon-containing film and a mask on the silicon-containing film. The substrate processing method further includes generating plasma from a first process gas containing a hydrogen fluoride gas in the chamber. The generating plasma includes etching the silicon-containing film with a chemical species contained in the plasma. A flow rate of the hydrogen fluoride gas is at least 25 vol % of a total flow rate of the non-inert components of the first process gas.

Abstract: A technique improves selectivity in etching of a silicon-containing film over etching of a mask in plasma etching. A substrate processing method includes placing a substrate in a chamber in a plasma processing apparatus. The substrate includes a silicon-containing film and a mask on the silicon-containing film. The substrate processing method further includes generating plasma from a first process gas containing a hydrogen fluoride gas in the chamber. The generating plasma includes etching the silicon-containing film with a chemical species contained in the plasma. A flow rate of the hydrogen fluoride gas is at least 80 vol % of a total flow rate of non-inert components of the first process gas.

Abstract: An etching method of an exemplary embodiment involves providing a substrate in a chamber of a plasma treatment system. The substrate includes a silicon-containing film. The method further involves etching the silicon-containing film by a chemical species in plasma generated from a process gas in the chamber. The process gas contains a halogen gas component and phosphorous gas component.

Abstract: An etching method enables plasma etching of a silicon-containing film with reduced lateral etching. The etching method includes providing a substrate in a chamber included in a plasma processing apparatus. The substrate includes a silicon-containing film. The etching method further includes setting a flow rate proportion of a phosphorus-containing gas with respect to a total flow rate of the process gas so as to establish a predetermined ratio of an etching rate of an alternate stack of a silicon oxide film and a silicon nitride film to an etching rate of the silicon oxide film.

Abstract: An etching method include: etching a silicon-containing film or a metal-containing film formed on a substrate; and heating the substrate by temporarily irradiating the substrate with electromagnetic waves during the etching.