Abstract: Metal Oxide Semiconductor Field Effect Transistors (MOSFET) are disclosed. One MOSFET includes, a substrate having a well of a first conductivity type. The MOSFET also includes source and drain regions, of a second conductivity type, formed in the well arranged apart from each other. Moreover, the MOSFET includes a first region, of a second conductivity type, formed in the well near the drain region. The first region has a low doping. Furthermore, the MOSFET includes a second region of a second conductivity type, formed near the source region. The second region has a doping substantially higher than the doping of the first region. A second MOSFET includes a substrate having a well of a first conductivity type and source and drain regions, of a second conductivity type, formed in the well apart from each other. Moreover, the MOSFET includes a drain extension region of the second conductivity type, formed in the well near the drain region.

Abstract: Metal Oxide Semiconductor Field Effect Transistors (MOSFET) are disclosed. One MOSFET includes, a substrate having a well of a first conductivity type. The MOSFET also includes source and drain regions, of a second conductivity type, formed in the well arranged apart from each other. Moreover, the MOSFET includes a first region, of a second conductivity type, formed in the well near the drain region. The first region has a low doping. Furthermore, the MOSFET includes a second region of a second conductivity type, formed near the source region. The second region has a doping substantially higher than the doping of the first region. A second MOSFET includes a substrate having a well of a first conductivity type and source and drain regions, of a second conductivity type, formed in the well apart from each other. Moreover, the MOSFET includes a drain extension region of the second conductivity type, formed in the well near the drain region.

Abstract: Metal Oxide Semiconductor Field Effect Transistors (MOSFET) are disclosed. One MOSFET includes, a substrate having a well of a first conductivity type. The MOSFET also includes source and drain regions, of a second conductivity type, formed in the well arranged apart from each other. Moreover, the MOSFET includes a first region, of a second conductivity type, formed in the well near the drain region. The first region has a low doping. Furthermore, the MOSFET includes a second region of a second conductivity type, formed near the source region. The second region has a doping substantially higher than the doping of the first region. A second MOSFET includes a substrate having a well of a first conductivity type and source and drain regions, of a second conductivity type, formed in the well apart from each other. Moreover, the MOSFET includes a drain extension region of the second conductivity type, formed in the well near the drain region.

Abstract: An improved MOS transistor and method for making it are described. The MOS transistor's source and drain have a first conductivity type and are separated from each other by a first region having a second conductivity type opposite to the first conductivity type. A second region, also having the second conductivity type, is formed adjacent to the drain and is separated from the first region by the drain.

Abstract: An improved well boosting implant which provides better characteristics than traditional halo implants particularly for short channel devices (e.g., 0.25 microns or less). In effect, an implant is distributed across the entire channel with higher concentrations occurring in the center of the channel of the devices having gate lengths less than the critical dimension. This is done by using very large tilt angles (e.g., 30-50.degree.) with a relatively light dopant species and by using a relatively high energy when compared to the traditional halo implants.

Abstract: A hydroxy-functional polymeric dispersant which is substantially free of acid groups, amine groups, and ethylenic unsaturation, the dispersant being especially adapted for dispersing pigments therein and being compatible with a variety of film-forming polymers, said dispersant being the free radical addition polymerization reaction product of a mixture of monomers consisting essentially of:(a) 15-30% by weight styrene; and(b) 15-30% by weight of at least one alkyl methacrylate monomer having 1 to 16 carbon atoms in the alkyl group; and(c) 20-60% by weight of at least one alkyl acrylate monomer having 1 to 16 carbon atoms in the alkyl group; and(d) 7-25% by weight of at least one hydroxy-functional ethylenically unsaturated monomer copolymerizable with monomers (a) (b) and (c);wherein said polymeric dispersant has a weight average molecular weight of 18,000 to 24,000, a number average molecular weight of 4,500 to 7,400, and a polydispersity of 2.9 to 4.2.

Abstract: A method for forming narrow length transistors by forming a trench in a first layer over a semiconductor substrate. Spacers are then formed within the trench and a gate dielectric is formed between the spacers at the bottom of the trench on the semiconductor substrate. The trench is then filled with a gate electrode material which is chemically-mechanically polished back to isolate the gate electrode material within the trench, and the first layer is removed leaving the gate dielectric, gate electrode and spacers behind.

Abstract: A hydroxy functional polymeric dispersant which is substantially free of acid groups, amine groups, and ethylenic unsaturation, the dispersant being especially adapted for dispersing pigments therein and being compatible with a variety of film-forming polymers, said dispersant being the free radical addition polymerization reaction product of a mixture of monomers consisting essentially of:(a) 15-30% by weight styrene; and(b) 15-30% by weight of at least one alkyl methacrylate monomer having 1 to 16 carbon atoms in the alkyl group; and(c) 20-60% by weight of at least one alkyl acrylate monomer having 1 to 16 carbon atoms in the alkyl group; and(d) 7-25% by weight of at least one hydroxy-functional ethylenically unsaturated monomer copolymerizable with monomers (a) (b) and (c);wherein said polymeric dispersant has a weight average molecular weight of 18,000 to 24,000, a number average molecular weight of 4,500 to 7,400, and a polydispersity of 2.9 to 4.2.

Abstract: A hydroxy-functional polymeric dispersant which is substantially free of acid groups, amine groups, and ethylenic unsaturation, the dispersant being especially adapted for dispersing pigments therein and being compatible with a variety of film-forming polymers, said dispersant being the free radical addition polymerization reaction product of a mixture of monomers consisting essentially of:(a) 15-30% by weight styrene; and(b) 15-30% by weight of at least one alkyl methacrylate monomer having 1 to 16 carbon atoms in the alkyl group; and(c) 20-60% by weight of at least one alkyl acrylate monomer having 1 to 16 carbon atoms in the alkyl group; and(d) 7-25% by weight of at least one hydroxy-functional ethylenically unsaturated monomer copolymerizable with monomers (a) (b) and (c);wherein said polymeric dispersant has a weight average molecular weight of 18,000 to 24,000, a number average molecular weight of 4,500 to 7,400, and a polydispersity of 2.9 to 4.2.

Abstract: A hydroxy-functional polymeric dispersant which is substantially free of acid groups, amine groups, and ethylenic unsaturation, the dispersant being especially adapted for dispersing pigments therein and being compatible with a variety of film-forming polymers, said dispersant being the free radical addition polymerization reaction product of a mixture of monomers consisting essentially of:(a) 15-30% by weight styrene; and(b) 15-30% by weight of at least one alkyl methacrylate monomer having 1 to 16 carbon atoms in the alkyl group; and(c) 20-60% by weight of at least one alkyl acrylate monomer having 1 to 16 carbon atoms in the alkyl group; and(d) 7-25% by weight of at least one hydroxy-functional ethylenically unsaturated monomer copolymerizable with monomers (a) (b) and (c);wherein said polymeric dispersant has a weight average molecular weight of 18,000 to 24,000, a number average molecular weight of 4,500 to 7,400, and a polydispersity of 2.9 to 4.2.

Abstract: An apparatus is provided for electrical erosion by electrical discharges across the gap between an electrode and workpiece being eroded. A sensor means provides information regarding the electrical condition in the gap.

Abstract: A process for recovering diterpene glycosides from the Stevia rebaudiana plant includes the steps of sequentially extracting plant material with a first solvent of intermediate polarity to extract plant substances which tend to interfere with a liquid chromatographic separation of the glycosides, and then with a second solvent of high polarity to extract glycosides, and chromatographically separating the extracted glycosides by introducing them onto a liquid chromatography column having a packing of an oxygen-containing organic stationary phase covalently bonded through a silicon atom to an inorganic support, eluting them with a solvent of polarity higher than that of the first solvent but lower than that of the second solvent, and collecting individually eluate fractions rich in respective glycosides.