Abstract: A memory device includes a substrate and source and drain regions formed in the substrate. The source and drain regions include both phosphorous and arsenic and the phosphorous may be implanted prior to the arsenic. The memory device also includes a first dielectric layer formed over the substrate and a charge storage element formed over the first dielectric layer. The memory device may further include a second dielectric layer formed over the charge storage element and a control gate formed over the second dielectric layer.

Abstract: An adjustable power splitter includes: a power divider with an input and a first and second divider output; a first adjustable phase shifter and first adjustable attenuator series coupled to the first divider output and providing a first power output; and a second adjustable phase shifter and second adjustable attenuator series coupled to the second divider output and providing a second power output.

Abstract: A modular system and method for providing power for LED lighting systems. The power source unit comprises (1) a power supply that converts A/C voltage to regulated D/C voltage, (2) a configurable intelligent gateway module that receives the regulated D/C voltage and places it on a power bus to which one or more power node modules and any accessories in need of power, such as motion detectors or cooling units, are coupled, and (3) an intelligent power node module that converts the regulated D/C voltage to a regulated D/C current and provides it to the particular LED Light Module (LLM), and which also receives data from the LLM, such as temperature data, and adjusts the regulated current accordingly. The gateway module also may receive control data from control devices, such as dimmers or wireless controllers, and instruct the power node module to regulate its output current accordingly.

Abstract: A light emitting diode (LED) verification system is provided having a mounting module for securing an LED board for testing. The mounting module includes a thermal management system for controlling the temperature of the LED board. A mounting plate is provided for centering the LED board. A clamp is provided for securing the LED board. A hood is positioned over the mounting module. The hood has a top and a base. The mounting module is positioned at the base of the hood. The mounting plate centers the LED board with respect to a centerline of the hood. A light meter is positioned at the top of the hood and centered with respect to the centerline of the hood. The light meter measures light emitted from the LED board.

Abstract: A temperature measurement system is provided for a light emitting diode (LED) assembly that includes an LED having two semiconductors joined together at an LED junction. The system includes a temperature sensor operatively connected to the LED assembly at a remote location that is remote from the LED junction. The temperature sensor is configured to measure a temperature of the LED assembly at the remote location. A temperature calculation module is operatively connected to the temperature sensor for receiving the measured temperature at the remote location from the temperature sensor. The temperature calculation module is configured to determine a junction temperature at the LED junction based on the measured temperature a the remote location.

Abstract: A light emitting diode (LED) assembly is provided having a LED and a temperature sensor for monitoring a temperature of the LED. An active cooling circuit receives temperature input from the temperature sensor. The temperature input is indicative of the temperature of the LED. An active cooling system cools the LED. The active cooling system being controlled by the active cooling circuit to control a temperature of the LED.

Abstract: An electrical connector is provided for connecting a light emitting diode (LED) to a driver. The electrical connector includes a housing, a driver input contact held by the housing and configured to be electrically connected to a power output of the driver, and an LED output contact held by the housing and configured to be electrically connected to a power input of the LED. An electrical path is defined between the driver input contact and the LED output contact for supplying electrical power from the driver to the power input of the LED. The electrical connector includes a temperature monitor and control (TMC) module operatively connected to a temperature sensor for receiving a temperature associated with the LED. The TMC module is configured to control the flow of electrical power from the driver input contact to the LED output contact based on the temperature received from the temperature sensor.

Abstract: A double-gate semiconductor device includes a substrate, an insulating layer, a fin and two gates. The insulating layer is formed on the substrate and the fin is formed on the insulating layer. A first gate is formed on the insulating layer and is adjacent a first sidewall of the fin. The second gate is formed on the insulating layer and is adjacent a second sidewall of the fin opposite the first sidewall. The first and second gates both include a conductive material and are electrically separated by the fin.

Abstract: A temperature measurement system is provided for a light emitting diode (LED) assembly that includes an LED having two semiconductors joined together at an LED junction. The system includes a temperature sensor operatively connected to the LED assembly at a remote location that is remote from the LED junction. The temperature sensor is configured to measure a temperature of the LED assembly at the remote location. A temperature calculation module is operatively connected to the temperature sensor for receiving the measured temperature at the remote location from the temperature sensor. The temperature calculation module is configured to determine a junction temperature at the LED junction based on the measured temperature a the remote location.

Abstract: A memory device includes a substrate and source and drain regions formed in the substrate. The source and drain regions include both phosphorous and arsenic and the phosphorous may be implanted prior to the arsenic. The memory device also includes a first dielectric layer formed over the substrate and a charge storage element formed over the first dielectric layer. The memory device may further include a second dielectric layer formed over the charge storage element and a control gate formed over the second dielectric layer.

Abstract: A memory device includes a substrate and source and drain regions formed in the substrate. The source and drain regions include both phosphorous and arsenic and the phosphorous may be implanted prior to the arsenic. The memory device also includes a first dielectric layer formed over the substrate and a charge storage element formed over the first dielectric layer. The memory device may further include a second dielectric layer formed over the charge storage element and a control gate formed over the second dielectric layer.

Abstract: An HVAC unit ventilator, particularly suited for schools and hotels, includes a single damper blade driven directly by a motor to control a supply air's mixture of return air and outside air. The damper blade is selectively pivotal to a full outside air position, a full return air position, and various intermediate mixed-air positions. The damper blade has flexible edge and end seals that create little if any frictional drag as the damper blade pivots to the intermediate positions, yet the seals provide a positive, tight seal when the damper stops at either the full outside air position or the full return air position. The unit ventilator includes a filter frame that not only supports an air filter but also provides the damper blade with sealing surfaces and structural support. For rigidity, the damper blade has somewhat of a box-like structure that is bi-directionally reinforced by ribs and triangular gussets.

Abstract: A method includes forming a first rectangular mesa from a layer of semiconducting material and forming a first dielectric layer around the first mesa. The method further includes forming a first rectangular mask over a first portion of the first mesa leaving an exposed second portion of the first mesa and etching the exposed second portion of the first mesa to produce a reversed T-shaped fin from the first mesa.

Abstract: A method for forming fin structures for a semiconductor device that includes a substrate and a dielectric layer formed on the substrate is provided. The method includes etching the dielectric layer to form a first structure, depositing an amorphous silicon layer over the first structure, and etching the amorphous silicon layer to form second and third fin structures adjacent first and second side surfaces of the first structure. The second and third fin structures may include amorphous silicon material. The method further includes depositing a metal layer on upper surfaces of the second and third fin structures, performing a metal-induced crystallization operation to convert the amorphous silicon material of the second and third fin structures to a crystalline silicon material, and removing the first structure.

Abstract: A semiconductor device may include a substrate and an insulating layer formed on the substrate. A fin may be formed on the insulating layer. The fin may include a side surface and a top surface, and the side surface may have a <100> orientation. A first gate may be formed on the insulating layer proximate to the side surface of the fin.

Abstract: An HVAC unit ventilator, particularly suited for schools and hotels, includes a single damper blade driven directly by a motor to control a supply air's mixture of return air and outside air. The damper blade is selectively pivotal to a full outside air position, a full return air position, and various intermediate mixed-air positions. The damper blade has flexible edge and end seals that create little if any frictional drag as the damper blade pivots to the intermediate positions, yet the seals provide a positive, tight seal when the damper stops at either the full outside air position or the full return air position. The unit ventilator includes a filter frame that not only supports an air filter but also provides the damper blade with sealing surfaces and structural support. For rigidity, the damper blade has somewhat of a box-like structure that is bi-directionally reinforced by ribs and triangular gussets.

Abstract: Multiple semiconductor devices are formed with different threshold voltages. According to one exemplary implementation, first and second semiconductor devices are formed and doped differently, resulting in different threshold voltages for the first and second semiconductor devices.

Abstract: A semiconductor device may include a substrate, an insulating layer formed on the substrate and a conductive fin formed on the insulating layer. The conductive fin may include a number of side surfaces and a top surface. The semiconductor device may also include a source region formed on the insulating layer adjacent a first end of the conductive fin and a drain region formed on the insulating layer adjacent a second end of the conductive fin. The semiconductor device may further include a metal gate formed on the insulating layer adjacent the conductive fin in a channel region of the semiconductor device.

Abstract: A fin field effect transistor (FinFET) includes a reversed T-shaped fin. The FinFET further includes source and drain regions formed adjacent the reversed T-shaped fin. The FinFET further includes a dielectric layer formed adjacent surfaces of the fin and a gate formed adjacent the dielectric layer.

Abstract: A method of forming a fin field effect transistor includes forming a fin and forming a source region on a first end of the fin and a drain region on a second end of the fin. The method further includes forming a dummy gate with a first semi-conducting material in a first pattern over the fin and forming a dielectric layer around the dummy gate. The method also includes removing the first semi-conducting material to leave a trench in the dielectric layer corresponding to the first pattern, thinning a portion of the fin exposed within the trench, and forming a metal gate within the trench.