Abstract: The present disclosure relates to IL-34 antibodies, compositions comprising the same, and methods of using the antibodies and or compositions thereof for treating immune-mediated diseases such as neurodegenerative diseases, for example Alzheimer's Disease or a tauopathy disease.

Abstract: Systems and methods are directed to building annotated models based on eyes-off data. Specifically, a synthetic data generation model is trained and used to further train a target model. The synthetic data generation model is trained within an eyes-off environment using an anonymity technique on confidential data. The synthetic data generation model is then used to create synthetic data that closely represents the confidential data but without any specific details that can be linked back to the confidential data. The synthetic data is then annotated and used to train the target model within an eyes-on environment. Subsequently, the target model is deployed back within the eyes-off environment to classify the confidential data.

Abstract: The disclosure relates to barcoded polymer nanoparticles for in vivo screening and for in vivo therapeutic delivery, and methods therefor. More particularly, the invention relates to polymer nanoparticles, such as reversible addition-fragmentation chain transfer (RAFT) polymer compositions, associated with polynucleotide barcodes, for therapeutic delivery, and for high throughput in vivo screening of drug delivery nanoparticles.

Abstract: The invention relates to barcoded nucleic acid nanostructure delivery compositions for in vivo screening for subsequent use in vivo therapeutic delivery, and methods therefor. More particularly, the invention relates to nucleic acid nanostructure delivery compositions, such as DNA origami structures, associated with barcodes for high throughput in vivo screening of the nucleic acid nanostructure delivery compositions for subsequent use in drug delivery, and methods therefor.

Abstract: A method for depositing a silicon nitride layer on a stack is provided. The method comprises providing an atomic layer deposition, comprising a plurality of cycles, wherein each cycle comprises dosing the stack with a silicon containing precursor by providing a silicon containing precursor gas, providing an N2 plasma conversion, and providing an H2 plasma conversion.

Abstract: An external urine collection system for collecting urine excreted by a user through the user's external urethral orifice includes a urinary assembly having a sleeve and a cup that define a collection chamber. The sleeve can be attached to an area around the user's external urethral orifice by an adhesive. The cup can be coupled to the sleeve through a male connector and female connector that form a liquid tight seal between the sleeve and the cup. An outlet is defined by at least one of the sleeve and the cup for draining urine excreted by the user into the urinary assembly.

Abstract: An external urine collection system for collecting urine excreted by a female user through the female user's external urethral orifice includes a urinary assembly having a sleeve and a cup that define a collection chamber. The sleeve can be attached to an area around the female user's external urethral orifice by an adhesive. The cup can be coupled to the sleeve through a male connector and female connector that form a liquid tight seal between the sleeve and the cup. An outlet is defined by at least one of the sleeve and the cup for draining urine excreted by the user into the urinary assembly.

Abstract: A method of depositing ALD films on semiconductor substrates processed in a micro-volume of a plasma enhanced atomic layer deposition (PEALD) reaction chamber wherein a single semiconductor substrate is supported on a ceramic surface of a pedestal and process gas is introduced through gas outlets in a ceramic surface of a showerhead into a reaction zone above the semiconductor substrate, includes (a) cleaning the ceramic surfaces of the pedestal and showerhead with a fluorine plasma such that aluminum-rich byproducts are formed on the ceramic surfaces, (b) depositing a conformal halide-free atomic layer deposition (ALD) oxide undercoating on the ceramic surfaces so as to cover the aluminum-rich byproducts, (c) depositing a pre-coating on the halide-free ALD oxide undercoating, and (d) processing a batch of semiconductor substrates by transferring each semiconductor substrate into the reaction chamber and depositing a film on the semiconductor substrate supported on the ceramic surface of the pedestal.

Abstract: A method of depositing ALD films on semiconductor substrates processed in a micro-volume of a plasma enhanced atomic layer deposition (PEALD) reaction chamber wherein a single semiconductor substrate is supported on a ceramic surface of a pedestal and process gas is introduced through gas outlets in a ceramic surface of a showerhead into a reaction zone above the semiconductor substrate, includes (a) cleaning the ceramic surfaces of the pedestal and showerhead with a fluorine plasma such that aluminum-rich byproducts are formed on the ceramic surfaces, (b) depositing a conformal halide-free atomic layer deposition (ALD) oxide undercoating on the ceramic surfaces so as to cover the aluminum-rich byproducts, (c) depositing a pre-coating on the halide-free ALD oxide undercoating, and (d) processing a batch of semiconductor substrates by transferring each semiconductor substrate into the reaction chamber and depositing a film on the semiconductor substrate supported on the ceramic surface of the pedestal.

Abstract: A method of depositing silicon nitride films on semiconductor substrates processed in a micro-volume of a plasma enhanced atomic layer deposition (PEALD) reaction chamber wherein a single semiconductor substrate is supported on a ceramic surface of a pedestal and process gas is introduced through gas outlets in a ceramic surface of a showerhead into a reaction zone above the semiconductor substrate, includes (a) cleaning the ceramic surfaces of the pedestal and showerhead with a fluorine plasma, (b) depositing a halide-free atomic layer deposition (ALD) oxide undercoating on the ceramic surfaces, (c) depositing a precoating of ALD silicon nitride on the halide-free ALD oxide undercoating, and (d) processing a batch of semiconductor substrates by transferring each semiconductor substrate into the reaction chamber and depositing a film of ALD silicon nitride on the semiconductor substrate supported on the ceramic surface of the pedestal.

Abstract: An external urine collection system for collecting urine excreted by a female user through the female user's external urethral orifice includes a urinary assembly having a sleeve and a cup that define a collection chamber. The sleeve can be attached to an area around the female user's external urethral orifice by an adhesive. The cup can be coupled to the sleeve through a male connector and female connector that form a liquid tight seal between the sleeve and the cup. An outlet is defined by at least one of the sleeve and the cup for draining urine excreted by the user into the urinary assembly.

Abstract: A highly tensile dielectric layer is generated on a heat sensitive substrate while not exceeding thermal budget constraints. Ultraviolet (UV) irradiation is used to produce highly tensile films to be used, for example, in strained NMOS transistor architectures. UV curing of as-deposited PECVD silicon nitride films, for example, has been shown to produce films with stresses of at least 1.65 E10 dynes/cm2. Other dielectric capping layer film materials show similar results. In transistor implementations, the stress from a source/drain region capping layer composed of such a film is uniaxially transferred to the NMOS channel through the source-drain regions to create tensile strain in the NMOS channel.

Abstract: Semiconductor processing chamber showerheads with contoured faceplates, as well as techniques for producing such faceplates, are provided. Data describing deposition rate as a function of gap distance between a reference showerhead faceplate and a reference substrate may be obtained, as well as data describing deposition rate as a function of location on the substrate when the reference showerhead and the reference substrate are in a fixed arrangement with respect to each other. The two data sets may be used to determine offsets from a reference plane associated with the faceplate that determine a contour profile to be used with the faceplate.

Abstract: Provided herein are methods of depositing conformal silicon nitride films using atomic layer deposition by exposure to a halogen-free, N—H-bond-free, and carbon-free silicon-containing precursor such as disilane, purging of the precursor, exposure to a nitrogen plasma, and purging of the plasma at low temperatures. A high frequency plasma is used, such as a plasma having a frequency of at least 13.56 MHz or at least 27 MHz. Methods yield substantially pure conformal silicon nitride films suitable for deposition in semiconductor devices, such as in trenches or features, or for memory encapsulation.

Abstract: Semiconductor processing chamber showerheads with contoured faceplates, as well as techniques for producing such faceplates, are provided. Data describing deposition rate as a function of gap distance between a reference showerhead faceplate and a reference substrate may be obtained, as well as data describing deposition rate as a function of location on the substrate when the reference showerhead and the reference substrate are in a fixed arrangement with respect to each other. The two data sets may be used to determine offsets from a reference plane associated with the faceplate that determine a contour profile to be used with the faceplate.

Abstract: Provided herein are methods of depositing conformal silicon nitride films using atomic layer deposition by exposure to a halogen-free, N—H-bond-free, and carbon-free silicon-containing precursor such as disilane, purging of the precursor, exposure to a nitrogen plasma, and purging of the plasma at low temperatures. A high frequency plasma is used, such as a plasma having a frequency of at least 13.56 MHz or at least 27 MHz. Methods yield substantially pure conformal silicon nitride films suitable for deposition in semiconductor devices, such as in trenches or features, or for memory encapsulation.

Abstract: Semiconductor processing chamber showerheads with contoured faceplates, as well as techniques for producing such faceplates, are provided. Data describing deposition rate as a function of gap distance between a reference showerhead faceplate and a reference substrate may be obtained, as well as data describing deposition rate as a function of location on the substrate when the reference showerhead and the reference substrate are in a fixed arrangement with respect to each other. The two data sets may be used to determine offsets from a reference plane associated with the faceplate that determine a contour profile to be used with the faceplate.

Abstract: Disclosed herein are methods of depositing a SiN film having a reduced wet etch rate. The methods may include adsorbing a film precursor comprising Si onto a semiconductor substrate in a processing chamber to form an adsorption-limited layer of precursor, and then removing unadsorbed precursor from the volume surrounding the adsorbed precursor. The adsorbed precursor may then be reacted by exposing it to a plasma comprising N-containing ions and/or radicals to form a SiN film layer on the substrate, and the SiN film layer may then be densified by exposing it to a He plasma. The foregoing steps may then be repeated to form another densified SiN film layer on the substrate. Also disclosed herein are apparatuses for depositing SiN films having reduced wet etch rates on semiconductor substrates which employ the foregoing techniques.

Abstract: The embodiments herein focus on plasma enhanced atomic layer deposition (PEALD) processes using pulsed plasmas. While conventional PEALD processes use continuous wave plasmas during the plasma exposure/conversion operation, the embodiments herein utilize a pulsed plasma during this operation to achieve a film with high quality sidewalls. Because conventional PEALD techniques result in films having high quality at the bottom and top of a feature, but low quality on the sidewalls, this increased sidewall quality in the disclosed methods corresponds to a film that is overall more uniform in quality compared to that achieved with conventional continuous wave plasma techniques.

Abstract: A basketball backboard system having a multi-cavity base is disclosed herein. The base has two or more cavities for receiving ballast. The base may have interior cavities enclosed within the base or exterior cavities, such as a receptacle or bowl, or receiving and storing ballast. Both interior and exterior cavities may be used in the same base.