Abstract: The embodiments herein focus on plasma enhanced atomic layer deposition (PEALD) processes using pulsed plasmas. While conventional PEALD processes use continuous wave plasmas during the plasma exposure/conversion operation, the embodiments herein utilize a pulsed plasma during this operation to achieve a film with high quality sidewalls. Because conventional PEALD techniques result in films having high quality at the bottom and top of a feature, but low quality on the sidewalls, this increased sidewall quality in the disclosed methods corresponds to a film that is overall more uniform in quality compared to that achieved with conventional continuous wave plasma techniques.

Abstract: Semiconductor processing chamber showerheads with contoured faceplates, as well as techniques for producing such faceplates, are provided. Data describing deposition rate as a function of gap distance between a reference showerhead faceplate and a reference substrate may be obtained, as well as data describing deposition rate as a function of location on the substrate when the reference showerhead and the reference substrate are in a fixed arrangement with respect to each other. The two data sets may be used to determine offsets from a reference plane associated with the faceplate that determine a contour profile to be used with the faceplate.

Abstract: A highly tensile dielectric layer is generated on a heat sensitive substrate while not exceeding thermal budget constraints. Cascaded ultraviolet (UV) irradiation is used to produce highly tensile films to be used, for example, in strained NMOS transistor architectures. Successive UV radiation of equal or shorter wavelengths with variable intensity and duration selectively breaks bonds in the Si—N matrix and minimizes shrinkage and film relaxation. Higher tensile stress than a non-cascaded approach may be obtained.

Abstract: Transistor architectures and fabrication processes generate channel strain without adversely impacting the efficiency of the transistor fabrication process while preserving the material quality and enhancing the performance of the resulting transistor. Transistor strain is generated is PMOS devices using a highly compressive post-salicide amorphous carbon capping layer applied as a blanket over on at least the source and drain regions. The stress from this capping layer is uniaxially transferred to the PMOS channel through the source-drain regions to create compressive strain in PMOS channel.

Abstract: A hinge for attaching a toilet seat to irregularly spaced toilet bowl mounting holes, the hinge body having a mounting plate cooperating with a bowl mounting hole and having a plurality of interconnected fixing holes for receiving a fixing bolt in one of a plurality of selected positions. An integral flexibly hinged cover closes over the hinge body and is frictionally secured thereto for concealing the fixing holes and bolt, and giving the hinge a finished appearance.

Abstract: A highly tensile dielectric layer is generated on a heat sensitive substrate while not exceeding thermal budget constraints. Cascaded ultraviolet (UV) irradiation is used to produce highly tensile films to be used, for example, in strained NMOS transistor architectures. Successive UV radiation of equal or shorter wavelengths with variable intensity and duration selectively breaks bonds in the Si—N matrix and minimizes shrinkage and film relaxation. Higher tensile stress than a non-cascaded approach may be obtained.

Abstract: Transistor architectures and fabrication processes generate channel strain without adversely impacting the efficiency of the transistor fabrication process while preserving the material quality and enhancing the performance of the resulting transistor. Transistor strain is generated is PMOS devices using a highly compressive post-salicide boron doped carbon capping layer applied as a blanket over on at least the source and drain regions. The stress from this capping layer is uniaxially transferred to the PMOS channel through the source-drain regions to create compressive strain in PMOS channel.

Abstract: Transistor architectures and fabrication processes generate channel strain without adversely impacting the efficiency of the transistor fabrication process while preserving the material quality and enhancing the performance of the resulting transistor. Transistor strain is generated is PMOS devices using a highly compressive post-salicide amorphous carbon capping layer applied as a blanket over on at least the source and drain regions. The stress from this capping layer is uniaxially transferred to the PMOS channel through the source-drain regions to create compressive strain in PMOS channel.

Abstract: Compositions, food products or beverages for ameliorating the symptoms of celiac disease or gluten sensitive enteropathy comprising egg yolk antibodies against gluten, including gliadin, high molecular glutenin, low molecular glutenin and mixtures of the peptides. The antibodies may be produced by immunizing egg laying fowl with immunogenic preparations of gluten and harvesting the eggs and egg yolks.

Abstract: A method for forming a silicon-based dielectric film on a substrate with a single deposition process operation using pulsed plasma enhanced chemical vapor deposition (PECVD) wherein the high frequency radio frequency power of the plasma is pulsed, allows enhanced control, efficiency and product quality of the PECVD process. Pulsing the high frequency RF power of the plasma reduces the deposited film thickness per unit time the high frequency RF power of the plasma is on. This yields silicon-based dielectric films that are both thin and conformal.

Abstract: A method for forming a silicon-based dielectric film on a substrate with a single deposition process operation using pulsed plasma enhanced chemical vapor deposition (PECVD) wherein the high frequency radio frequency power of the plasma is pulsed, allows enhanced control, efficiency and product quality of the PECVD process. Pulsing the high frequency RF power of the plasma reduces the deposited film thickness per unit time the high frequency RF power of the plasma is on. This yields silicon-based dielectric films that are both thin and conformal.

Abstract: This device is built on many features. It relates to an Mp3-player which gives it the capability to be used with your car stereo system. In short, you will have the ability to use your Mp3-player with the use of your car stereo. You will also have the ability to install and use this invention without the need for attachments such as USB cords. This device will also enable you to download music from your PC or directly from your car stereo. You will be able to play DVD's as well as CD's that have been ripped or burned from your PC or car Stereo. It will include broadband radio (AM&FM) DVD player, high speed copier, bass and treble tuner, clock and timer.

Abstract: A salicide layer is deposited on the source/drain regions of a PMOS transistor. A dielectric capping layer having residual compressive stress is formed on the salicide layer by depositing a plurality of PECVD dielectric sublayers and plasma-treating each sublayer. Compressive stress from the dielectric capping layer is uniaxially transferred to the PMOS channel through the source-drain regions to create compressive strain in the PMOS channel. To form a compressive dielectric layer, a deposition reactant mixture containing A1 atoms and A2 atoms is provided in a vacuum chamber. Element A2 is more electronegative than element A1, and A1 atoms have a positive oxidation state and A2 atoms have a negative oxidation state when A1 atoms are bonded with A2 atoms. A deposition plasma is generated by applying HF and LF radio-frequency power to the deposition reactant mixture, and a sublayer of compressive dielectric material is deposited.

Abstract: A salicide layer is deposited on the source/drain regions of a PMOS transistor. A dielectric capping layer having residual compressive stress is formed on the salicide layer by depositing a plurality of PECVD dielectric sublayers and plasma-treating each sublayer. Compressive stress from the dielectric capping layer is uniaxially transferred to the PMOS channel through the source-drain regions to create compressive strain in the PMOS channel. To form a compressive dielectric layer, a deposition reactant mixture containing A1 atoms and A2 atoms is provided in a vacuum chamber. Element A2 is more electronegative than element A1, and A1 atoms have a positive oxidation state and A2 atoms have a negative oxidation state when A1 atoms are bonded with A2 atoms. A deposition plasma is generated by applying HF and LF radio-frequency power to the deposition reactant mixture, and a sublayer of compressive dielectric material is deposited.

Abstract: Transistor architectures and fabrication processes generate channel strain without adversely impacting the efficiency of the transistor fabrication process while preserving the material quality and enhancing the performance of the resulting transistor. Transistor strain is generated is NMOS devices using a highly tensile post-salicide silicon nitride capping layer on the source and drain regions. The stress from this capping layer is uniaxially transferred to the NMOS channel through the source-drain regions to create tensile strain in NMOS channel.

Abstract: Applicants' ATR system is weather-agile because it is comprised of a primary target sensing means that is capable of surveilling the target scene in foul or fair weather, and a secondary target sensing means that is also capable of sensing targets in various weather. The primary and secondary sensing means communicate through a control center so that ultimately, among several weapons available, the most strategically located and equipped weapon is activated for the destruction of a selected target, given the weather. The control center accomplishes the communication by receiving the sensed target signature from the primary sensing means, processing the signature using database already resident in the center and transmitting the processed target signature to the weapon possessing the greatest potential for successfully destroying the target.

Abstract: A carrying device for transporting items over hard surfaces and soft surfaces including a carrier body having a top surface and a bottom surface, the carrier body having a recessed portion in the top surface thereof, the recessed portion having a plurality of tabs extending inwardly therefrom, a storage container adapted for placement in the recessed portion, the storage container having elongated slots therein for receipt of the tabs in the elongated slots to secure the containers to the carrier body, and at least two wheels connected to the carrier body for rolling the carrier body over hard surfaces.

Abstract: A carrying device for transporting items over hard surfaces and soft surfaces including a carrier body having a top surface and a bottom surface, the carrier body having a recessed portion in the top surface thereof, the recessed portion having a plurality of tabs extending inwardly therefrom, a storage container adapted for placement in the recessed portion, the storage container having elongated slots therein for receipt of the tabs in the elongated slots to secure the containers to the carrier body, and at least two wheels connected to the carrier body for rolling the carrier body over hard surfaces.

Abstract: A nutraceutical composition comprising water insoluble antler powder or water soluble antler powder or a combination of both. Also disclosed is a method of producing antler powder, either water soluble, water insoluble or a combination of both.

Abstract: The present invention relates to a flash memory device and pre-program only the memory cells which keep the erase state by verifying whether the memory cells are programmed before performing the pre-program operation to prevent the memory cell from being over-programmed at the time of pre-program. Accordingly, there are excellent effects in that the reliability of the device can be improved by preventing the memory cell from being over-programmed and the operation speed of the device can be improved by reducing the time required in the pre-program operation.