Abstract: A low-dropout (LDO) regulator includes a voltage reference circuit to provide a reference voltage, a pass device including an input terminal coupled to a voltage input, an output terminal to provide an output voltage and a control terminal, and an error amplifier including a first amplifier input for receiving the reference voltage, a second amplifier input, an amplifier output coupled to the control terminal of the pass device. Additionally, the LDO regulator includes a feedback circuit including a feedback input coupled to the output terminal of the pass device and a feedback output coupled to the second amplifier input to provide a feedback signal. The LDO regulator further includes a control circuit including a non-volatile memory to store configuration data to control operation of the voltage reference circuit, the pass device, the error amplifier, and the feedback circuit to produce the output voltage.

Abstract: In an embodiment, a low-dropout (LDO) regulator includes at least one of a programmable voltage reference and a programmable frequency compensation circuit and is configurable to produce an output voltage. The programmable voltage reference includes a floating-gate transistor coupled to a reference output and configurable for providing a reference voltage to an input of an error amplifier. The programmable frequency compensation circuit is responsive to a programmable current reference circuit that includes at least one floating-gate transistor that is configurable to adjust a frequency compensation parameter. A control circuit is provided to selectively program floating gates of the floating gate transistors to adjust the output voltage and/or to adjust a frequency component of the output voltage.

Abstract: In an embodiment, a low-dropout (LDO) regulator includes at least one of a programmable voltage reference and a programmable frequency compensation circuit and is configurable to produce an output voltage. The programmable voltage reference includes a floating-gate transistor coupled to a reference output and configurable for providing a reference voltage to an input of an error amplifier. The programmable frequency compensation circuit is responsive to a programmable current reference circuit that includes at least one floating-gate transistor that is configurable to adjust a frequency compensation parameter. A control circuit is provided to selectively program floating gates of the floating gate transistors to adjust the output voltage and/or to adjust a frequency component of the output voltage.

Abstract: A low-dropout (LDO) regulator includes a voltage reference circuit to provide a reference voltage, a pass device including an input terminal coupled to a voltage input, an output terminal to provide an output voltage and a control terminal, and an error amplifier including a first amplifier input for receiving the reference voltage, a second amplifier input, an amplifier output coupled to the control terminal of the pass device. Additionally, the LDO regulator includes a feedback circuit including a feedback input coupled to the output terminal of the pass device and a feedback output coupled to the second amplifier input to provide a feedback signal. The LDO regulator further includes a control circuit including a non-volatile memory to store configuration data to control operation of the voltage reference circuit, the pass device, the error amplifier, and the feedback circuit to produce the output voltage.

Abstract: A non-volatile memory cell fabricated with a conventional CMOS process, including a flip-flop circuit having an NMOS transistor that shares a floating gate with a write PMOS capacitor and an erase PMOS capacitor. An erase function is implemented by inducing Fowler-Nordheim tunneling through the erase PMOS capacitor, thereby providing a positive charge on the floating gate. A write function is implemented by inducing Fowler-Nordheim tunneling through the NMOS transistor, thereby providing a negative charge on the floating gate. The write PMOS capacitor provides bias voltages during the erase and write operations. Prior to a read operation, the flip-flop circuit is reset. If the floating gate stores a positive charge, the NMOS transistor turns on, thereby switching the state of the flip-flop circuit. If the floating gate stores a negative charge, the NMOS transistor turns off, thereby leaving the flip-flop circuit in the reset state.

Abstract: According to some embodiments, a single-pin method of configuring a multi-bit state of a state machine of a circuit comprises: connecting a configuration resistor load having a configuration resistance to a single input pin of the integrated circuit; injecting a configuration current through the input pin and configuration resistor load; in response to injecting the current, generating a sequence of configuration signals indicative of a plurality of results of a plurality of comparisons of the configuration resistance to a plurality of predetermined thresholds, each result corresponding to a threshold; and configuring the multi-bit state of the state machine according to the sequence of configuration signals.

Abstract: A non-volatile memory cell fabricated with a conventional CMOS process, including a flip-flop circuit having an NMOS transistor that shares a floating gate with a write PMOS capacitor and an erase PMOS capacitor. An erase function is implemented by inducing Fowler-Nordheim tunneling through the erase PMOS capacitor, thereby providing a positive charge on the floating gate. A write function is implemented by inducing Fowler-Nordheim tunneling through the NMOS transistor, thereby providing a negative charge on the floating gate. The write PMOS capacitor provides bias voltages during the erase and write operations. Prior to a read operation, the flip-flop circuit is reset. If the floating gate stores a positive charge, the NMOS transistor turns on, thereby switching the state of the flip-flop circuit. If the floating gate stores a negative charge, the NMOS transistor turns off, thereby leaving the flip-flop circuit in the reset state.

Abstract: A voltage reference circuit provides a reference voltage that can be precisely programmed. The threshold voltage of a first non-volatile memory (NVM) transistor is programmed while coupled in parallel with a second NVM transistor. During programming, one or more capacitors are connected between the floating gate of the first NVM transistor and ground, and one or more capacitors are connected between the floating gate of the second NVM transistor and ground. The first and second NVM transistors are then coupled to a differential amplifier, which is used to generate a single-ended reference voltage in response to the programmed threshold voltage of the first NVM transistor. Bipolar transistors are selectively switched between the various capacitors and ground, thereby providing precise adjustment of the temperature coefficient of the voltage reference circuit.

Abstract: A voltage reference circuit provides a reference voltage that can be precisely programmed. The threshold voltage of a first non-volatile memory (NVM) transistor is programmed while coupled in parallel with a second NVM transistor. During programming, one or more capacitors are connected between the floating gate of the first NVM transistor and ground, and one or more capacitors are connected between the floating gate of the second NVM transistor and ground. The first and second NVM transistors are then coupled to a differential amplifier, which is used to generate a single-ended reference voltage in response to the programmed threshold voltage of the first NVM transistor. Bipolar transistors are selectively switched between the various capacitors and ground, thereby providing precise adjustment of the temperature coefficient of the voltage reference circuit.

Abstract: A voltage reference circuit provides a reference voltage that can be precisely programmed. The threshold voltage of a first non-volatile memory (NVM) transistor is programmed while coupled in parallel with a reference NVM transistor. During programming, the reference NVM transistor has a floating gate coupled to ground through a first set of capacitors, and coupled to a reference voltage through a second set of capacitors. The program threshold voltage of the first NVM transistor is dependent on the first and second sets of capacitors. The first and reference NVM transistors are then coupled in parallel, and a differential amplifier is used to generate a single-ended reference voltage in response to the programmed threshold voltage of the first NVM transistor. Capacitors can be transferred between the first set and the second set, thereby providing precise adjustment of the single ended reference voltage.