Abstract: The invention relates to a process for preparation of chlorine from hydrogen chloride comprising circulating a liquid melt comprising copper ions Cun+ with n being a number in the range from 1 to 2, alkali cations and chloride ions Cl in a reactor system comprising three bubble lift reactors I, II and III, each comprising a reaction zone i, ii and iii respectively, wherein: ?(a) in the reaction zone i of the first bubble lift reactor I, a liquid melt comprising copper ions Cun+, alkali cations and chloride ions Cl— is contacted with oxygen at a temperature in the range from 395 to 405° C. so that the molar ratio Cun+:Cu+ in the liquid melt increases, obtaining a liquid melt having an increased molar ratio Cun+:Cu+ ?(b) the liquid melt obtained in (a) is circulated to the reaction zone ii in the second bubble lift reactor II, where the liquid melt is contacted with hydrogen chloride at a temperature in the range from 395 to 405° C.

Abstract: A process including bringing a solid substrate in contact with a compound of general formula (I), (II), (III), or (IV) in the gaseous state where A is NR2 or OR with R being an alkyl group, an alkenyl group, an aryl group, or a silyl group, E is NR or O, n is 0, 1 or 2, m is 0, 1 or 2, and R? is hydrogen, an alkyl group, an alkenyl group, an aryl group, or a silyl group.

Abstract: The present invention is in the field of processes for preparing inorganic metal- or semimetal-containing films. The process for preparing inorganic metal- or semimetal-containing films comprising (a) depositing a metal- or semimetal-containing compound from the gaseous state onto a solid substrate and (b) bringing the solid substrate with the deposited metal- or semimetal-containing compound in contact with a compound of general formula (I) or (II) wherein Z is NR2, PR2, OR, SR, CR2, SiR2, X is H, R? or NR?2, wherein at least one X is H, n is 1 or 2, and R and R? is an alkyl group, an alkenyl group, an aryl group, or a silyl group.

Abstract: Described herein is a process for preparing inorganic metal-containing films including bringing a solid substrate in contact with a compound of general formula (I) or (II) in the gaseous state where A is NR2 or OR with R being an alkyl group, an alkenyl group, an aryl group, or a silyl group, E is NR or O, n is 1, 2 or 3, and R? is hydrogen, an alkyl group, an alkenyl group, an aryl group, or a silyl group, wherein if n is 2 and E is NR or A is OR, at least one R in NR or OR bears no hydrogen atom in the 1-position.

Abstract: The present invention is in the field of processes for preparing inorganic metal- or semimetal-containing films. The process comprising (a) depositing a metal- or semimetal-containing compound from the gaseous state onto a solid substrate and (b) bringing the solid substrate in contact with a compound of general formula (I), (II), (III), (IV), (V), (VI), or (VII) in the gaseous state (I) (II) (III) (IV) . . . (V) (VI) (VII) wherein A is NR or O, E is CR?, CNR?2, N, PR?2, or SOR?, G is CR? or N, R is an alkyl group, an alkenyl group, an aryl group, or a silyl group and R? and R? are hydrogen, an alkyl group, an alkenyl group, an aryl group, or a silyl group.

Abstract: The present invention is in the field of processes for preparing inorganic metal- or semimetal-containing films. The process comprising (a) depositing a metal- or semimetal-containing compound from the gaseous state onto a solid substrate and (b) bringing the solid substrate in contact with a compound of general formula (I), (II), or (III) in the gaseous state (I) (II) (III) wherein A is NR, NR2, PR, PR2, O, OR, S, or SR, E is N, NR, P, PR, O or S, n is 1, 2, or 3, R is an alkyl group, an alkenyl group, an aryl group, or a silyl group and R? is hydrogen, an alkyl group, an alkenyl group, an aryl group, or a silyl group, and A, E, and n are chosen such that the compound of general formula (I), (II), or (III) is electronically neutral.

Abstract: A process including bringing a solid substrate in contact with a compound of general formula (I), (II), (III), or (IV) in the gaseous state where A is NR2 or OR with R being an alkyl group, an alkenyl group, an aryl group, or a silyl group, E is NR or O, n is 0, 1 or 2, m is 0, 1 or 2, and R? is hydrogen, an alkyl group, an alkenyl group, an aryl group, or a silyl group.

Abstract: The present disclosure is in the field of processes for the generation of thin inorganic films on substrates, in particular atomic layer deposition processes. Described herein is a process for preparing metal-containing films including: (a) depositing a metal-containing compound from the gaseous state onto a solid substrate, and (b) bringing the solid substrate with the deposited metal-containing compound in contact with a compound of general formula (I) wherein Z is a C2-C4 alkylene group, and R is hydrogen, an alkyl group, an alkenyl group, an aryl group, or a silyl group.

Abstract: Process for the recovery of transition metal from cathode active materials containing nickel and lithium, wherein said process comprises the steps of (a) treating a lithium containing transition metal oxide material with a leaching agent (preferably an acid selected from sulfuric acid, hydrochloric acid, nitric acid, methanesulfonic acid, oxalic acid and citric acid), (b) adjusting the pH value to 2.5 to 8, and (c) treating the solution obtained in step (b)with metallic nickel, cobalt or manganese or a combination of at least two of the foregoing.

Abstract: A process including bringing a solid substrate in contact with a compound of general formula (I), (II), (III), or (IV) in the gaseous state where A is NR2 or OR with R being an alkyl group, an alkenyl group, an aryl group, or a silyl group, E is NR or O, n is 0, 1 or 2, m is 0, 1 or 2, and R? is hydrogen, an alkyl group, an alkenyl group, an aryl group, or a silyl group.

Abstract: A heat transfer or storage medium containing a nitrate salt composition including at least one alkali metal nitrate and optionally alkaline earth metal nitrate; and, at least one alkali metal nitrite and optionally alkaline earth metal nitrite in an amount of 1.1 to 15.0 mol %. The molar amount of the alkali metal nitrite and optionally alkaline earth metal nitrite for a desired temperature is calculated by x nitrite = K 6 ? ( T ) K 6 ? ( T ) + P O ? ? 2 Xnitrite is the mole fraction of nitrite, K6(T) is the temperature-dependent equilibrium constant of the reaction nitrate ?nitrite+½ oxygen (NO3?? NO2?+½ O2), pO2 is the oxygen partial pressure and T is the temperature of the nitrate salt composition.

Abstract: The present invention is in the field of processes for the generation of thin inorganic films on substrates. The present invention relates to a process for preparing metal- or semimetal-containing films comprising (a) depositing a metal- or semimetal-containing compound from the gaseous state onto a solid substrate and (b) bringing the solid substrate with the deposited metal- or semi-metal-containing compound in contact with a compound of general formula (Ia), (Ib), (Ic), (Id) or (Ie), wherein E is Ti, Zr, Hf, V, Nb, or Ta, L1 and L2 is a pentadienyl or a cyclopentadienyl ligand, and X1 and X2 is nothing or a neutral ligand, R1, R2, R3, R4, R5, R6, R7, R8, R9, R10, R11, R12, R13, R14, R15, R16, R17, R18, R19, R20, R21, R22, R23, R24, R25, and R26 is hydrogen, an alkyl group, an alkenyl group, an aryl group or a silyl group, wherein for compound (Ia), at least one of R1 to R10 contains at least one carbon and/or silicon atom and A is an alkyl group, an alkenyl group, an aryl group or a silyl group.

Abstract: Process for the recovery of transition metal from spent lithium ion batteries containing nickel, wherein said process comprises the steps of (a) heating a lithium containing transition metal oxide material to a temperature in the range of from 400 to 1200° C., (b) treating said heat-treated material with water, (c) treating the solid residue from step (b)with an acid selected from sulfuric acid, hydrochloric acid, nitric acid, methanesulfonic acid, oxalic acid and citric acid, (d) adjusting the pH value to 2.5 to 8, (e) removing compounds of Al, Cu, Fe, Zn or combinations of at least two of the foregoing from the solution or slurry obtained in step (d).

Abstract: Described herein is a process including bringing a solid substrate in contact with a compound of general formula (I), (II), (III), or (IV) in the gaseous state where A is NR2 or OR with R being an alkyl group, an alkenyl group, an aryl group, or a silyl group, E is NR or O, n is 0, 1 or 2, m is 0, 1 or 2, and R? is hydrogen, an alkyl group, an alkenyl group, an aryl group, or a silyl group.

Abstract: Described herein is a process for preparing inorganic metal-containing films including bringing a solid substrate in contact with a compound of general formula (I) or (II) in the gaseous state where A is NR2 or OR with R being an alkyl group, an alkenyl group, an aryl group, or a silyl group, E is NR or O, n is 1, 2 or 3, and R? is hydrogen, an alkyl group, an alkenyl group, an aryl group, or a silyl group, wherein if n is 2 and E is NR or A is OR, at least one R in NR or OR bears no hydrogen atom in the 1-position.

Abstract: The present disclosure is in the field of processes for the generation of thin inorganic films on substrates, in particular atomic layer deposition processes. Described herein is a process for preparing metal-containing films including: (a) depositing a metal-containing compound from the gaseous state onto a solid substrate, and (b) bringing the solid substrate with the deposited metal-containing compound in contact with a compound of general formula (I) wherein Z is a C2-C4 alkylene group, and R is hydrogen, an alkyl group, an alkenyl group, an aryl group, or a silyl group.

Abstract: The present invention relates to a method for reducing or preventing the decomposition of a composition Z comprising Z1 a salt of dithionous acid in an amount ranging from 50 to 100 wt % and optionally Z2 an additive selected from the group consisting of alkali metal carbonate, alkaline earth metal carbonate, alkali metal or alkaline earth metal tripolyphosphate (Na5P3O10), alkali metal or alkaline earth metal sulfite, disulfite or sulfate, dextrose and complexing agents in a combined amount ranging from 0.

Abstract: A process comprising: (a) distilling a melt comprising crude alkanesulfonic acid to completely or partly remove low boilers, wherein the low boilers are drawn off at the top of a distillation column or of a one-stage evaporation apparatus and a material stream comprising alkanesulfonic acid, high boilers and residual low boilers is withdrawn at the bottom of the distillation column or of the one-stage evaporation apparatus, (b) sending the stream comprising alkanesulfonic acid, high boilers and residual low boilers into a melt crystallization as the starting melt to obtain crystals formed from the alkanesulfonic acid, hydrates of the alkanesulfonic acid or a mixture of both suspended in mother liquor, (c) performing a solid-liquid separation to remove the crystals from the mother liquor, and (d) optionally washing the crystals to remove mother liquor adhering to the crystals.

Abstract: Use of a nitrate salt composition Z comprising Z1 at least one alkali metal nitrate and optionally alkaline earth metal nitrate and also Z2 at least one alkali metal nitrite and optionally alkaline earth metal nitrite in an amount of Z2 in the range from 1.1 to 15.0 mol % based on the sum of Z1 plus Z2 as heat transfer or heat storage medium in apparatuses in which these heat transfer or heat storage media are comprised at a temperature in the range from 500 to 620° C. and an oxygen partial pressure over the nitrate salt composition in the range from 0.1 to 1.

Abstract: The invention relates to a method of reprocessing alkanesulfonic acid employed in a chemical process as an agent, catalyst or solvent and comprising the steps of: (a) removing an alkanesulfonic acid-comprising stream from a reaction mixture generated in the chemical process, (b) feeding the alkanesulfonic acid-comprising stream into a melt crystallization as the starting melt to form crystals of the alkanesulfonic acid, of hydrates of the alkanesulfonic acid or of a mixture of both suspended in mother liquor, (c) performing a solid-liquid separation to remove the crystals from the mother liquor, (d) optionally washing the crystals to remove mother liquor adhering to the crystals, (e) recycling the washed or unwashed crystals removed from the mother liquor into the chemical process.