Abstract: Provided are a magnetic tunnel junction dement suppressing diffusion and penetration of constituent elements between a hard mask film, and a magnetic tunnel junction film and a protection layer, and a method for manufacturing the magnetic tunnel junction element. The magnetic tunnel junction element has a configuration in which a non-magnetic insertion layer (7) including Ta or the like is inserted beneath a hard mask layer (8).

Abstract: A magnetoresistance effect element with a small element size can be provided which achieves both an increase in a thermal stability factor ? and a reduction in a writing current IC0 and which improves a performance index ?/IC0(?A?1) obtained by dividing the thermal stability factor ? by the writing current IC0. The magnetoresistance effect element includes a first reference layer (B1), a first junction layer (11), a first magnetic layer (21), a first non-magnetic coupling layer (31), a second magnetic layer (22), and a second junction layer (12), and a film thickness of the first non-magnetic coupling layer (31) is 0.1 nm or more and 0.3 nm or less.

Abstract: A magnetoresistance effect element with a small element size can be provided which achieves both an increase in a thermal stability factor ? and a reduction in a writing current IC0 and which improves a performance index ?/IC0(?A?1) obtained by dividing the thermal stability factor ? by the writing current IC0. The magnetoresistance effect element includes a first reference layer (B1), a first junction layer (11), a first magnetic layer (21), a first non-magnetic coupling layer (31), a second magnetic layer (22), and a second junction layer (12), and a film thickness of the first non-magnetic coupling layer (31) is 0.1 nm or more and 0.3 nm or less.

Abstract: Provided are a magnetic tunnel junction dement suppressing diffusion and penetration of constituent elements between a hard mask film, and a magnetic tunnel junction film and a protection layer, and a method for manufacturing the magnetic tunnel junction element. The magnetic tunnel junction element has a configuration in which a non-magnetic insertion layer (7) including Ta or the like is inserted beneath a hard mask layer (8).

Abstract: A method for producing a magnetic memory includes: forming a magnetic film having a non-magnetic layer between a first magnetic layer and a second magnetic layer on a substrate having an electrode layer; performing annealing treatment at a first treatment temperature in a state where a magnetic field is applied in a direction perpendicular to a film surface of the first or the second magnetic layer in vacuum; forming a magnetic tunnel junction element; forming a protective film protecting the magnetic tunnel junction element; a formation accompanied by thermal history, in which a constituent element of a magnetic memory is formed after the protective film formation on the substrate; and implementing annealing treatment at a second treatment temperature lower than the first treatment temperature on the substrate in an annealing treatment chamber, in vacuum or inert gas wherein no magnetic field is applied.

Abstract: A method for producing a magnetic memory includes: forming a magnetic film having a non-magnetic layer between a first magnetic layer and a second magnetic layer on a substrate having an electrode layer; performing annealing treatment at a first treatment temperature in a state where a magnetic field is applied in a direction perpendicular to a film surface of the first or the second magnetic layer in vacuum; forming a magnetic tunnel junction element; forming a protective film protecting the magnetic tunnel junction element; a formation accompanied by thermal history, in which a constituent element of a magnetic memory is formed after the protective film formation on the substrate; and implementing annealing treatment at a second treatment temperature lower than the first treatment temperature on the substrate in an annealing treatment chamber, in vacuum or inert gas wherein no magnetic field is applied.

Abstract: A magnetoresistive effect element of the present invention includes: a domain wall motion layer, a spacer layer and a reference layer. The domain wall motion layer is made of ferromagnetic material with perpendicular magnetic anisotropy. The spacer layer is formed on the domain wall motion layer and made of non-magnetic material. The reference layer is formed on the spacer layer and made of ferromagnetic material, magnetization of the reference layer being fixed. The domain wall motion layer includes at least one domain wall, and stores data corresponding to a position of the domain wall. An anisotropy magnetic field of the domain wall motion layer is larger than a value in which the domain wall motion layer can hold the perpendicular magnetic anisotropy, and smaller than an essential value of an anisotropy magnetic field of the ferromagnetic material of the domain wall motion layer.

Abstract: Disclosed is a polyradical compound which can be used as an electrode active material for at least one of a positive electrode and a negative electrode. The polyradical compound has a repeating unit represented by general formula (1) and is crosslinked using a bifunctional crosslinking agent having two polymerizing groups in the molecule represented by general formula (2), wherein R1 to R3 each independently represent hydrogen or methyl group; R4 to R7 each independently represent C1 to C3 alkyl group; X represents single bond, linear, branched or cyclic C1 to C15 alkylenedioxy group, alkylene group, phenylenedioxy group, phenylene group or structure represented by general formula (3); and R8 to R13 each independently represent hydrogen or methyl group, and k represents an integer of 2 to 5.

Abstract: A magnetoresistive effect element of the present invention includes: a domain wall motion layer, a spacer layer and a reference layer. The domain wall motion layer is made of ferromagnetic material with perpendicular magnetic anisotropy. The spacer layer is formed on the domain wall motion layer and made of non-magnetic material. The reference layer is formed on the spacer layer and made of ferromagnetic material, magnetization of the reference layer being fixed. The domain wall motion layer includes at least one domain wall, and stores data corresponding to a position of the domain wall. An anisotropy magnetic field of the domain wall motion layer is larger than a value in which the domain wall motion layer can hold the perpendicular magnetic anisotropy, and smaller than an essential value of an anisotropy magnetic field of the ferromagnetic material of the domain wall motion layer.

Abstract: MRAM includes a first wiring, a second wiring, and a memory cell. The first wiring extends to a first direction, and the second wiring extends to a second direction. The memory cell includes a free magnetic layer in which a plurality of magnetic layers coupled anti-ferromagnetically through non-magnetic layers are laminated, and is provided at an intersection of the first and second wirings. The magnetization direction of the free magnetic layer is different from the first and second directions. The writing method includes (a) reading a first data stored in the memory cell; (b) comparing a second data to be written to the memory cell and the first data; and (c) changing a direction of a first write current supplied to the first wiring and a direction of the second write current to be supplied to the second wiring, when the first data and second data are different.

Abstract: Disclosed is a polyradical compound which can be used as an electrode active material for at least one of a positive electrode and a negative electrode. The polyradical compound has a repeating unit represented by general formula (1) and is crosslinked using a bifunctional crosslinking agent having two polymerizing groups in the molecule represented by general formula (2), wherein R1 to R3 each independently represent hydrogen or methyl group; R4 to R7 each independently represent C1 to C3 alkyl group; X represents single bond, linear, branched or cyclic C1 to C15 alkylenedioxy group, alkylene group, phenylenedioxy group, phenylene group or structure represented by general formula (3); and R8 to R13 each independently represent hydrogen or methyl group, and k represents an integer of 2 to 5.

Abstract: MRAM includes a first wiring, a second wiring, and a memory cell. The first wiring extends to a first direction, and the second wiring extends to a second direction. The memory cell includes a free magnetic layer in which a plurality of magnetic layers coupled anti-ferromagnetically through non-magnetic layers are laminated, and is provided at an intersection of the first and second wirings. The magnetization direction of the free magnetic layer is different from the first and second directions. The writing method includes (a) reading a first data stored in the memory cell; (b) comparing a second data to be written to the memory cell and the first data; and (c) changing a direction of a first write current supplied to the first wiring and a direction of the second write current to be supplied to the second wiring, when the first data and second data are different.

Abstract: To provide an RFID tag including therein a lightweight, thin, reusable by charging, and foldable power source. In an RFID tag including an IC module 2, an antenna 3, and a power source and with a thickness of 0.9 mm or less, there is included an organic radical battery with a thickness of 0.7 mm or less as the power source.

Abstract: A magnetic random access memory is provided including a substrate, a magnetoresistance element which includes a ferromagnetic layer having an invertible spontaneous magnetization, which varies in resistance according to the direction of the spontaneous magnetization, and is formed above the substrate, and a wiring which extends in a first direction and is used for making an electric current flow to generate a magnetic field to be applied to the magnetoresistance element. The wiring is formed so as to pass through a first position which is closer to the substrate than the magnetoresistance element and does not overlap the magnetoresistance element when viewed from a direction perpendicular to the main surface of the substrate, and a second position being above said magnetoresistance element.

Abstract: A magnetic memory is composed of: a magnetoresistance element including a free magnetic layer; a first interconnection extending in a first direction obliquely to an easy axis of the free magnetic layer; a second interconnection extending in a second direction substantially orthogonal to the first direction; and a write circuit writing data into the free magnetic layer through developing a first write current on the first interconnection, and then developing a second write current on the second interconnection with the first write current turned on. The free magnetic layer includes: first to N-th ferromagnetic layers and first to (N?1)-th non-magnetic layers with N being equal to or more than 4, the i-th non-magnetic layer being disposed between the i-th and (i+1)-th ferromagnetic layers with i being any of natural numbers equal to or less than N?1.

Abstract: A technology for eliminating the defects in a tunnel insulation film of magnetic tunnel junction and for suppressing generation of a defective bit in an MRAM using magnetic tunnel junction in a memory. The magnetic memory includes a substrate, an interlayer insulation film covering the upper surface side of the substrate, memory cells, and plugs penetrating the interlayer insulation film. The memory cell includes a first magnetic layer formed on the upper surface side of the interlayer insulation film, a tunnel insulation layer formed on the first magnetic layer, and a second magnetic layer formed on the tunnel insulation layer. The plug is connected electrically with the first magnetic layer. The tunnel current passing part of the tunnel insulation layer located between the first and second magnetic layers is arranged, at least partially, so as not to overlap the plug in the direction perpendicular to the surface of the substrate.

Abstract: A magnetic random access memory is provided including a substrate, a magnetoresistance element which includes a ferromagnetic layer having an invertible spontaneous magnetization, which varies in resistance according to the direction of the spontaneous magnetization, and is formed above the substrate, and a wiring which extends in a first direction and is used for making an electric current flow to generate a magnetic field to be applied to the magnetoresistance element. The wiring is formed so as to pass through a first position which is closer to the substrate than the magnetoresistance element and does not overlap the magnetoresistance element when viewed from a direction perpendicular to the main surface of the substrate, and a second position being above said magnetoresistance element.

Abstract: A magnetic random access memory is provided including a substrate, a magnetoresistance element which includes a ferromagnetic layer having an invertible spontaneous magnetization, which varies in resistance according to the direction of the spontaneous magnetization, and is formed above the substrate, and a wiring which extends in a first direction and is used for making an electric current flow to generate a magnetic field to be applied to the magnetoresistance element. The wiring is formed so as to pass through a first position which is closer to the substrate than the magnetoresistance element and does not overlap the magnetoresistance element when viewed from a direction perpendicular to the main surface of the substrate, and a second position being above said magnetoresistance element.

Abstract: A technology for eliminating the defects in a tunnel insulation film of magnetic tunnel junction and for suppressing generation of a defective bit in an MRAM using magnetic tunnel junction in a memory. The magnetic memory includes a substrate, an interlayer insulation film covering the upper surface side of the substrate, memory cells, and plugs penetrating the interlayer insulation film. The memory cell includes a first magnetic layer formed on the upper surface side of the interlayer insulation film, a tunnel insulation layer formed on the first magnetic layer, and a second magnetic layer formed on the tunnel insulation layer. The plug is connected electrically with the first magnetic layer. The tunnel current passing part of the tunnel insulation layer located between the first and second magnetic layers is arranged, at least partially, so as not to overlap the plug in the direction perpendicular to the surface of the substrate.

Abstract: A magnetic memory is composed of: a magnetoresistance element including a free magnetic layer; a first interconnection extending in a first direction obliquely to an easy axis of the free magnetic layer; a second interconnection extending in a second direction substantially orthogonal to the first direction; and a write circuit writing data into the free magnetic layer through developing a first write current on the first interconnection, and then developing a second write current on the second interconnection with the first write current turned on. The free magnetic layer includes: first to N-th ferromagnetic layers and first to (N?1)-th non-magnetic layers with N being equal to or more than 4, the i-th non-magnetic layer being disposed between the i-th and (i+1)-th ferromagnetic layers with i being any of natural numbers equal to or less than N?1.