Patents by Inventor Sadao Yoshikawa
Sadao Yoshikawa has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 8630133Abstract: With a serial interface memory device of this invention, a read-out rate of data is increased, while an increase in a size of a circuit is suppressed. An EEPROM is provided with a memory cell array storing data, a row address decoder and a column address decoder that select an address of the memory cell array in accordance with an address signal serially inputted in synchronization with a clock, sense amplifiers SA0-SA5, SA_M0 and SA_M1 each provided corresponding to each bit of the data, and a shift register that outputs the data read out from the sense amplifiers serially from a first bit. The column address decoder commences reading out two candidate data for the first bit by inputting each of the two candidate data to each of the two sense amplifiers SA_M0 and SA_M1, respectively, before all bits of the column address signal are established.Type: GrantFiled: February 17, 2011Date of Patent: January 14, 2014Assignee: ON Semiconductor Trading, Ltd.Inventors: Toshiki Rai, Sadao Yoshikawa
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Patent number: 8344766Abstract: A reset transistor is prevented from being deteriorated when power-down occurs during a programming operation or an erasing operation. It is made possible to protect the reset transistor as well as other transistors in a circuit to which a high voltage is applied when the power-down occurs during the erasing operation on an EEPROM, because the system is not reset all at once based only on a first reset signal POR of a power-on reset circuit, but is reset based on the first reset signal POR and a low voltage detection signal LD from a low voltage detection circuit so that the reset transistor is not turned on while the high voltage is applied to it.Type: GrantFiled: November 13, 2007Date of Patent: January 1, 2013Assignees: SANYO Semiconductor Co., Ltd., Semiconductor Components Industries, LLCInventors: Sadao Yoshikawa, Toshiki Rai
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Patent number: 8339860Abstract: This invention offers a semiconductor memory device, with which a resolution to read-out data is not reduced even at the time of verify and a stable read-out operation is possible even when a power supply voltage is reduced. A read-out circuit is provided with a current-voltage conversion circuit, that converts a cell current into a data voltage, and a sense amplifier that compares the data voltage with a reference voltage. The current-voltage conversion circuit is formed to include a variable load resistor that is connected to the memory cell through a bit line. The variable load resistor is formed to include P channel type MOS transistors that make load resistors and P channel type MOS transistors that constitute a switching circuit.Type: GrantFiled: January 21, 2011Date of Patent: December 25, 2012Assignees: SANYO Electric Co., Ltd., SANYO Semiconductor Co., Ltd.Inventors: Jumpei Maruyama, Sadao Yoshikawa
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Patent number: 8072819Abstract: A memory device including a serial-parallel conversion section that converts serial data into parallel data, a parallel-serial conversion section that converts parallel data into serial data, and a parallel-parallel conversion section that changes a bit width of the parallel data. This memory device connects one external terminal to the serial-parallel conversion section and another external terminal to the parallel-serial conversion section when access using a serial interface is performed. On the other hand, the memory device connects a plurality of external terminals to the parallel-parallel conversion section when access using a parallel interface is performed, thereby enabling the memory device to occasionally realize parallel transfer of data while using a conventional package.Type: GrantFiled: May 10, 2007Date of Patent: December 6, 2011Assignee: Semiconductor Components Industries, LLCInventors: Toshiki Rai, Sadao Yoshikawa
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Publication number: 20110205795Abstract: With a serial interface memory device of this invention, a read-out rate of data is increased, while an increase in a size of a circuit is suppressed. An EEPROM is provided with a memory cell array storing data, a row address decoder and a column address decoder that select an address of the memory cell array in accordance with an address signal serially inputted in synchronization with a clock, sense amplifiers SA0-SA5, SA_M0 and SA_M1 each provided corresponding to each bit of the data, and a shift register that outputs the data read out from the sense amplifiers serially from a first bit. The column address decoder commences reading out two candidate data for the first bit by inputting each of the two candidate data to each of the two sense amplifiers SA_M0 and SA_M1, respectively, before all bits of the column address signal are established.Type: ApplicationFiled: February 17, 2011Publication date: August 25, 2011Applicant: ON Semiconductor Trading, Ltd.Inventors: Toshiki Rai, Sadao Yoshikawa
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Publication number: 20110188316Abstract: This invention offers a semiconductor memory device, with which a resolution to read-out data is not reduced even at the time of verify and a stable read-out operation is possible even when a power supply voltage is reduced. A read-out circuit is provided with a current-voltage conversion circuit, that converts a cell current into a data voltage, and a sense amplifier that compares the data voltage with a reference voltage. The current-voltage conversion circuit is formed to include a variable load resistor that is connected to the memory cell through a bit line. The variable load resistor is formed to include P channel type MOS transistors that make load resistors and P channel type MOS transistors that constitute a switching circuit.Type: ApplicationFiled: January 21, 2011Publication date: August 4, 2011Applicants: SANYO Electric Co., Ltd., SANYO Semiconductor Co., Ltd.Inventors: Jumpei MARUYAMA, Sadao Yoshikawa
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Patent number: 7859913Abstract: There is offered a semiconductor memory device that has reduced number of high withstand voltage transistors so as to suppress an increase in a die size. A second transistor of N channel type is connected between a word line and a decoder circuit. A control signal from a control circuit is applied to a gate of the second transistor. When an output of the decoder circuit is at a low level, the word line is in a non-selected state, and a high voltage from a switching circuit is not outputted to the word line. Instead, the word line is provided with the ground voltage (=non-erasing voltage) from the decoder circuit through the second transistor.Type: GrantFiled: June 16, 2009Date of Patent: December 28, 2010Assignees: Sanyo Electric Co., Ltd., Sanyo Semiconductor Co., LtdInventors: Toshiki Rai, Sadao Yoshikawa
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Publication number: 20090310426Abstract: There is offered a semiconductor memory device that has reduced number of high withstand voltage transistors so as to suppress an increase in a die size. A second transistor of N channel type is connected between a word line and a decoder circuit. A control signal from a control circuit is applied to a gate of the second transistor. When an output of the decoder circuit is at a low level, the word line is in a non-selected state, and a high voltage from a switching circuit is not outputted to the word line. Instead, the word line is provided with the ground voltage (=non-erasing voltage) from the decoder circuit through the second transistor.Type: ApplicationFiled: June 16, 2009Publication date: December 17, 2009Applicants: SANYO Electric Co., Ltd., SANYO Semiconductor Co., Ltd.Inventors: Toshiki RAI, Sadao Yoshikawa
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Patent number: 7589583Abstract: The invention is mainly directed to providing a charge pump circuit which realizes low power consumption. A first clock signal is supplied from an oscillator circuit to capacitor elements forming a charge pump circuit. A current generation circuit controls a current flowing through each of inverters by controlling operation of PMOS and NMOS, and as a result controls the frequency of the first clock signal. A gate and a drain of PMOS are short-circuited, and between the node thereof and a ground terminal a constant current generation circuit and a resistor are connected in parallel. The constant current generation circuit serves to keep the current flowing through the inverters constant against a change of a power supply voltage. Therefore, the frequency of the clock signal is reduced according to the increase of the power supply voltage.Type: GrantFiled: November 13, 2007Date of Patent: September 15, 2009Assignees: Sanyo Electric Co., Ltd., Sanyo Semiconductor Co., Ltd.Inventors: Sadao Yoshikawa, Toshiki Rai
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Patent number: 7542349Abstract: The invention provides a semiconductor memory device where a circuit area is minimized and a voltage drop in a high voltage supply path to a source line is reduced. An output of a high voltage generation circuit is connected to a source line through a first transfer gate, and connected to a word line through a second transfer gate. The first transfer gate is configured of a P-channel type MOS transistor of which on and off are controlled by a write enable signal, and the second transfer gate is configured of a P-channel type MOS transistor of which on and off are controlled by an erase enable signal. A third transfer gate supplying the output of the high voltage generation circuit to the source line without through a high voltage switching circuit is further provided. The third transfer gate is configured of a P-channel type MOS transistor and an inverted output of the high voltage switching circuit is applied to the gate thereof.Type: GrantFiled: November 28, 2007Date of Patent: June 2, 2009Assignees: SANYO Electric Co., Ltd., SANYO Semiconductor Co., Ltd.Inventors: Toshiki Rai, Sadao Yoshikawa
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Patent number: 7451368Abstract: A packaged semiconductor device that enables testing of semiconductor chips incorporated therein in a simplified and efficient manner. The semiconductor device includes a packaged logic chip for processing data and a packaged memory chip for storing data that is processed by or that is to be processed by the logic circuit. The semiconductor device has an automatic rewrite circuit and a selector. The automatic rewrite circuit automatically writes test data to the memory circuit in accordance with a command signal from a tester. The selector selectively switches between accessing of the memory circuit by the automatic rewrite circuit and accessing of the memory circuit by the logic circuit. The tester provides the automatic rewrite circuit with a test start command signal to start testing the logic circuit.Type: GrantFiled: September 28, 2004Date of Patent: November 11, 2008Assignee: Sanyo Electric Co., Ltd.Inventors: Sigenori Shibata, Sadao Yoshikawa, Tomofumi Watanabe, Takayuki Suzuki
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Publication number: 20080143401Abstract: This invention offers a charge pump circuit that solves problems of deterioration of a device (a capacitive device or a charge transfer device) composing the charge pump circuit caused by leftover charges and malfunctioning due to the leftover charges. N-channel type charge transfer MOS transistors T0-TM, each of which has a gate and a drain connected together, are connected in series between an input terminal IN and an output terminal OUT. A terminal of each of capacitive devices C1-CM is connected to each of connecting nodes A-X between the charge transfer MOS transistors, respectively. Each of the nodes A-X is connected with a voltage reduction circuit through each of N-channel type MOS transistors N1-NM, each of which has a gate and a drain connected together. That is, the charge pump circuit has paths to release the leftover charges actively from the nodes A-X to outside when a boosting operation of the charge pump circuit is terminated.Type: ApplicationFiled: October 29, 2007Publication date: June 19, 2008Inventors: Toshiki Rai, Sadao Yoshikawa
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Publication number: 20080130374Abstract: The invention provides a semiconductor memory device where a circuit area is minimized and a voltage drop in a high voltage supply path to a source line is reduced. An output of a high voltage generation circuit is connected to a source line through a first transfer gate, and connected to a word line through a second transfer gate. The first transfer gate is configured of a P-channel type MOS transistor of which on and off are controlled by a write enable signal, and the second transfer gate is configured of a P-channel type MOS transistor of which on and off are controlled by an erase enable signal. A third transfer gate supplying the output of the high voltage generation circuit to the source line without through a high voltage switching circuit is further provided. The third transfer gate is configured of a P-channel type MOS transistor and an inverted output of the high voltage switching circuit is applied to the gate thereof.Type: ApplicationFiled: November 28, 2007Publication date: June 5, 2008Applicants: Sanyo Electric Co., Ltd., Sanyo Semiconductor Co., Ltd.Inventors: Toshiki Rai, Sadao Yoshikawa
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Publication number: 20080116961Abstract: The invention is mainly directed to providing a charge pump circuit which realizes low power consumption. A first clock signal is supplied from an oscillator circuit to capacitor elements forming a charge pump circuit. A current generation circuit controls a current flowing through each of inverters by controlling operation of PMOS and NMOS, and as a result controls the frequency of the first clock signal. A gate and a drain of PMOS are short-circuited, and between the node thereof and a ground terminal a constant current generation circuit and a resistor are connected in parallel. The constant current generation circuit serves to keep the current flowing through the inverters constant against a change of a power supply voltage. Therefore, the frequency of the clock signal is reduced according to the increase of the power supply voltage.Type: ApplicationFiled: November 13, 2007Publication date: May 22, 2008Applicants: Sanyo Electric Co., Ltd., Sanyo Semiconductor Co., Ltd.Inventors: Sadao Yoshikawa, Toshiki Rai
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Publication number: 20080111605Abstract: A reset transistor is prevented from being deteriorated when power-down occurs during a programming operation or an erasing operation. It is made possible to protect the reset transistor as well as other transistors in a circuit to which a high voltage is applied when the power-down occurs during the erasing operation on an EEPROM, because the system is not reset all at once based only on a first reset signal POR of a power-on reset circuit, but is reset based on the first reset signal POR and a low voltage detection signal LD from a low voltage detection circuit so that the reset transistor is not turned on while the high voltage is applied to it.Type: ApplicationFiled: November 13, 2007Publication date: May 15, 2008Applicants: SANYO ELECTRIC CO. LTD., SANYO SEMICONDUCTOR CO., LTD.Inventors: Sadao YOSHIKAWA, Toshiki Rai
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Publication number: 20070216553Abstract: The present invention provides a memory device including a serial-parallel conversion section that converts serial data into parallel data, a parallel-serial conversion section that converts parallel data into serial data, and a parallel-parallel conversion section that changes a bit width of the parallel data. This memory device connects one external terminal to the serial-parallel conversion section and another external terminal to the parallel-serial conversion section when access using a serial interface is performed. On the other hand, the memory device connects a plurality of external terminals to the parallel-parallel conversion section when access using a parallel interface is performed, thereby enabling the memory device to occasionally realize parallel transfer of data while using a conventional package.Type: ApplicationFiled: May 10, 2007Publication date: September 20, 2007Inventors: Toshiki Rai, Sadao Yoshikawa
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Patent number: 7259702Abstract: The present invention provides a memory device including a serial-parallel conversion section that converts serial data into parallel data, a parallel-serial conversion section that converts parallel data into serial data, and a parallel-parallel conversion section that changes a bit width of the parallel data. This memory device connects one external terminal to the serial-parallel conversion section and another external terminal to the parallel-serial conversion section when access using a serial interface is performed. On the other hand, the memory device connects a plurality of external terminals to the parallel-parallel conversion section when access using a parallel interface is performed, thereby enabling the memory device to occasionally realize parallel transfer of data while using a conventional package.Type: GrantFiled: October 14, 2005Date of Patent: August 21, 2007Assignee: Sanyo Electric Co., Ltd.Inventors: Toshiki Rai, Sadao Yoshikawa
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Publication number: 20060123164Abstract: The present invention provides a memory device including a serial-parallel conversion section that converts serial data into parallel data, a parallel-serial conversion section that converts parallel data into serial data, and a parallel-parallel conversion section that changes a bit width of the parallel data. This memory device connects one external terminal to the serial-parallel conversion section and another external terminal to the parallel-serial conversion section when access using a serial interface is performed. On the other hand, the memory device connects a plurality of external terminals to the parallel-parallel conversion section when access using a parallel interface is performed, thereby enabling the memory device to occasionally realize parallel transfer of data while using a conventional package.Type: ApplicationFiled: October 14, 2005Publication date: June 8, 2006Inventors: Toshiki Rai, Sadao Yoshikawa
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Publication number: 20050068818Abstract: A packaged semiconductor device that enables testing of semiconductor chips incorporated therein in a simplified and efficient manner. The semiconductor device includes a packaged logic chip for processing data and a packaged memory chip for storing data that is processed by or that is to be processed by the logic circuit. The semiconductor device has an automatic rewrite circuit and a selector. The automatic rewrite circuit automatically writes test data to the memory circuit in accordance with a command signal from a tester. The selector selectively switches between accessing of the memory circuit by the automatic rewrite circuit and accessing of the memory circuit by the logic circuit. The tester provides the automatic rewrite circuit with a test start command signal to start testing the logic circuit.Type: ApplicationFiled: September 28, 2004Publication date: March 31, 2005Applicant: Sanyo Electric Co., Ltd.Inventors: Sigenori Sibata, Sadao Yoshikawa, Tomofumi Watanabe, Takayuki Suzuki
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Patent number: 6392447Abstract: A high speed sense amp supplies current to a bit line connected to a memory cell transistor and also detects a potential of the bit line. The potential of the bit line varies according to a conductive state of the memory cell transistor. The sense amp includes a load element and a first transistor connected in series between a first potential and the bit line. A second transistor is connected between the first potential and the bit line. The bit line is input to an inverter that has its output terminal connected to a gate of the first transistor. A differential amp has a first input terminal connected to a reference potential and a second input terminal connected to a node between the load element and the first transistor. The output of the differential amp indicates a difference between the reference potential and the bit line potential.Type: GrantFiled: March 16, 1999Date of Patent: May 21, 2002Assignee: Sanyo Electric Co., Ltd.Inventors: Toshiki Rai, Sadao Yoshikawa