Abstract: A method for fabricating a semiconductor device includes grindstone surface activation treatment by means of a brush or ultrasonic wave carried out when a concave/convex pattern of a semiconductor wafer is planarized by polishing a semiconductor wafer held by a wafer holder by using a grindstone constituted of abrasive grains and material for holding the abrasive grains onto which the semiconductor wafer is pressed with relative motion. The semiconductor wafer is processed with high removal rate and the polishing thickness is controlled accurately.

Abstract: A film formed on a surface of a wafer on which an integrated circuit is to be constructed can be planarized by using a fixed abrasive tool regardless of the width of elements of a pattern underlying the film. The fixed abrasive tool is liable to form scratches in the surface of the film. A planarizing process of the present invention employs a fixed abrasive tool containing substances harder than the film to be planarized in a content of 10 ppm or below and having a mean pore diameter of 0.2 &mgr;m or below.

Abstract: A film formed on a surface of a wafer on which an integrated circuit is to be constructed can be planarized by using a fixed abrasive tool regardless of the width of elements of a pattern underlying the film. The fixed abrasive tool is liable to form scratches in the surface of the film. A planarizing process of the present invention employs a fixed abrasive tool containing substances harder than the film to be planarized in a content of 10 ppm or below and having a mean pore diameter of 0.2 &mgr;m or below.

Abstract: The present invention improves the precision of color synthesis and suppresses the generation of vertical stripes in the projected image, and includes at least the following three aspects.

Abstract: A method for fabricating a semiconductor device includes grindstone surface activation treatment by means of a brush or ultrasonic wave carried out when a concave/convex pattern of a semiconductor wafer is planarized by polishing a semiconductor wafer held by a wafer holder by using a grindstone constituted of abrasive grains and material for holding the abrasive grains onto which the semiconductor wafer is pressed with relative motion. The semiconductor wafer is processed with high removal rate and the polishing thickness is controlled accurately.

Abstract: There is provided the construction of a multiprojection apparatus composed of a plurality of projection units arranged in the vertical and horizontal directions, in which a transparent holding strip having an H-shaped cross section is inserted between screens each composed of a lenticular sheet and a Fresnel lens, and the right and left ends of a multiscreen are supported by elastic support members, or in which a receive member for receiving the screen in the direction of the optical axis and a screen holding device are provided, the receive member has such a shape as not to block projection light corresponding to an image on the screen and is located near a joint of the screen and another screen, and the holding device is disposed on a black stripe of the lenticular sheet and always pulled by an elastic member toward the receive member. Therefore, according to the present invention, it is possible to restrict the missing of information due to joints of the screens.