Abstract: An SiCN layer 108, BCB layer 110 and MSQ layer 112 are deposited in this sequence on a copper interconnect line constituted by a barrier metal layer 104 and a copper layer 106. The BCB layer 110 is formed by plasma polymerization of a monomer containing a divinylsiloxane bisbenzocyclobutene unit.

Abstract: A manufacturing method of a semiconductor device including a step of forming a via hole in an insulation layer including an organic low dielectric film, such as MSQ, SiC, and SiCN, and then embedding a wiring material in the via hole through a barrier metal. According to this method, a plasma treatment is performed after the via hole is formed and before the barrier metal is deposited, using a He/H2 gas capable of replacing groups (methyl groups) made of organic constituents and covering the surface of the exposed organic low dielectric film (MSQ) with hydrogen, or a He gas capable decomposing the groups (methyl groups) without removing organic low dielectric molecules. As a result, the surface of the low dielectric film (MSQ) is reformed to be hydrophilic and adhesion to the barrier metal is hence improved, thereby making it possible to prevent the occurrence of separation of the barrier metal and scratches.

Abstract: A stacked storage capacitor of a dynamic random access memory cell has a p-type polysilicon layer forming an upper part of an accumulating electrode, a dielectric film structure and a p-type polysilicon counter electrode, and boron difluoride is ion implanted into a non-doped polysilicon layer for the counter electrode so as to decrease leakage current density rather than a boron-implanted polysilicon counter electrode.

Abstract: A thermal oxidation method for producing a semiconductor device having a capacitor insulating film structure capable of making a thin film having a small leakage current and small temperature dependence of the leakage current. In the insulating film, a silicon nitride film with a small electron mobility and a silicon oxide film with a small hole mobility are alternately laminated in order of the nitride film/oxide film/nitride film/oxide film from a lower electrode side. A current component such as electrons flowing in this insulating film structure is limited by the layer with the smaller mobility to reduce the leakage current. An oxide film thickness of approximately several .ANG. can thus be strictly controlled. By forming the silicon nitride film between the high dielectric oxide film and the electrode, the reaction of the silicon electrode and the high dielectric oxide film can be prevented.