Abstract: A seed layer stack with a uniform top surface having a peak to peak roughness of 0.5 nm is formed by sputter depositing an amorphous layer on a smoothing layer such as Mg where the latter has a resputtering rate 2 × to 30 × that of the amorphous layer. The uppermost seed (template) layer is NiW, NiMo, or one or more of NiCr, NiFeCr, and Hf while the bottommost seed layer is Ta or TaN, for example. Accordingly, perpendicular magnetic anisotropy in an overlying magnetic layer is maintained during high temperature processing up to 400° C. and is advantageous for magnetic tunnel junctions in embedded memory devices, or read head sensors. The amorphous seed layer is SiN, TaN, or CoFeM where M may be B.

Abstract: A method for etching a magnetic tunneling junction (MTJ) structure is described. A stack of MTJ layers is provided on a bottom electrode. A top electrode is provided on the MTJ stack. The top electrode is patterned. Thereafter, the MTJ stack not covered by the patterned top electrode is oxidized or nitridized. Then, the MTJ stack is patterned to form a MTJ device wherein any sidewall re-deposition formed on sidewalls of the MTJ device is non-conductive and wherein some of the dielectric layer remains on horizontal surfaces of the bottom electrode.

Abstract: A process flow for forming and encapsulating magnetic tunnel junction (MTJ) nanopillars is disclosed wherein MTJ layers including a reference layer (RL), free layer (FL), and tunnel barrier layer (TB) are first patterned by reactive ion etching or ion beam etching to form MTJ sidewalls. A plurality of MTJs on a substrate is heated (annealed) at a station in a process chamber to substantially crystallize the RL, FL, and TB to a body centered cubic (bcc) structure without recrystallization from the edge of the device before an encapsulation layer is deposited thereby ensuring lattice matching between the RL and TB, and between the FL and TB. The encapsulation layer is deposited at the same station as the anneal step without breaking vacuum, and preferably using a physical vapor deposition to prevent reactive species from attacking MTJ sidewalls. Magnetoresistive ratio is improved especially for MTJs with critical dimensions below 70 nm.

Abstract: A magnetic device for magnetic random access memory (MRAM), spin torque MRAM, or spin torque oscillator technology is disclosed wherein a perpendicularly magnetized magnetic tunnel junction (p-MTJ) with a sidewall is formed between a bottom electrode and a top electrode. A first dielectric layer is 3 to 400 Angstroms thick, and formed on the p-MTJ sidewall with a physical vapor deposition RF sputtering process to establish a thermally stable interface with the p-MTJ up to temperatures around 400° C. during CMOS fabrication. The first dielectric layer may comprise one or more of B, Ge, and alloys thereof, and an oxide, nitride, carbide, oxynitride, or carbonitride. The second dielectric layer is up to 2000 Angstroms thick and may be one or more of SiOYNZ, AlOYNZ, TiOYNZ, SiCYNZ, or MgO where y+z>0.

Abstract: A seed layer stack with a uniform top surface having a peak to peak roughness of 0.5 nm is formed by sputter depositing an amorphous layer on a smoothing layer such as Mg where the latter has a resputtering rate 2 to 30× that of the amorphous layer. The uppermost seed (template) layer is NiW, NiMo, or one or more of NiCr, NiFeCr, and Hf while the bottommost seed layer is one or more of Ta, TaN, Zr, ZrN, Nb, NbN, Mo, MoN, TiN, W, WN, and Ru. Accordingly, perpendicular magnetic anisotropy in an overlying magnetic layer is substantially maintained during high temperature processing up to 400° C. and is advantageous for magnetic tunnel junctions in embedded MRAMs, spintronic devices, or in read head sensors. The amorphous seed layer is SiN, TaN, or CoFeM where M is B or another element with a content that makes CoFeM amorphous as deposited.

Abstract: Reservations for emergency/urgent care are made by users using a queue feature that identifies earliest available reservations at nearby care facilities that are identified based on user-selected facility search parameters. The queue feature identifies the earliest available reservations based on user-selected treatment categories and facility-selected capacity characteristics for the treatment categories, and recommends a best reservation. The treatment categories can be for example adult, child/pediatric, urgent care, direct admit, walk-in, or worker's comp. And the capacity characteristics can be for example wait time, black-out period, and/or maximum number of reservations per time period. In addition, a reservation-update feature enables the care facilities to update the capacity characteristics for the treatment categories at their facilities to reflect changed conditions.

Abstract: This invention relates to novel compounds having the structural formula I below: and to their pharmaceutically acceptable salt, compositions and methods of use. These novel compounds provide a treatment or prophylaxis of cognitive impairment, Alzheimer Disease, neurodegeneration and dementia.

Abstract: This invention relates to novel compounds having the structural formula I below: (I) and to their pharmaceutically acceptable salt, compositions and methods of use. These novel compounds provide a treatment or prophylaxis of cognitive impairment, Alzheimer Disease, neurodegeneration and dementia.

Abstract: This invention relates to novel compounds having the structural formula I below: and to their pharmaceutically acceptable salt, compositions and methods of use. These novel compounds provide a treatment or prophylaxis of cognitive impairment, Alzheimer Disease, neurodegeneration and dementia.

Abstract: This invention relates to substituted pyrrolo[3,4-b]pyridinamines having the structural formula IA below: and to their pharmaceutically acceptable salt, compositions and methods of use. These novel compounds provide a treatment or prophylaxis of cognitive impairment, Alzheimer Disease, neurodegeneration and dementia.

Abstract: This invention relates to novel compounds having the structural formula I below: and to their pharmaceutically acceptable salt, compositions and methods of use. These novel compounds provide a treatment or prophylaxis of cognitive impairment, Alzheimer Disease, neurodegeneration and dementia.

Abstract: This invention relates to novel compounds having the structural formula I below: and to their pharmaceutically acceptable salt, compositions and methods of use. These novel compounds provide a treatment or prophylaxis of cognitive impairment, Alzheimer Disease, neurodegeneration and dementia.

Abstract: This invention relates to novel compounds having the structural formula Ia or formula Ib: Ia Ib and their pharmaceutically acceptable salts, tautomers or in vivo hydrolysable precursors, compositions and methods of use thereof. These novel compounds provide a treatment or prophylaxis of A? related pathologies such as cognitive impairment, Alzheimer Disease, neurodegeneration and dementia.

Abstract: This invention relates to novel compounds having the structural formula I below and to their pharmaceutically acceptable salts, compositions and methods of use. These novel compounds provide a treatment or prophylaxis of cognitive impairment, Alzheimer Disease, neurodegeneration and dementia.

Abstract: This invention relates to novel compounds having the structural formula Ia or formula Ib below: (Ia, Ib), and their pharmaceutically acceptable salts, tautomers or in vivo hydrolysable precursors, compositions and methods of use thereof. These novel compounds provide a treatment or prophylaxis of A? related pathologies such as cognitive impairment, Alzheimer Disease, neurodegeneration and dementia.

Abstract: This invention relates to novel compounds having the structural formula I below: and to their pharmaceutically acceptable salt, compositions and methods of use. These novel compounds provide a treatment or prophylaxis of cognitive impairment, Alzheimer Disease, neurodegeneration and dementia.

Abstract: This invention relates to novel compounds having the structural formula I below: and to their pharmaceutically acceptable salts, compositions and methods of use. These novel compounds provide a treatment or prophylaxis of cognitive impairment, Alzheimer Disease, neurodegeneration and dementia.

Abstract: This invention relates to novel compounds having the structural formula I below: and to their pharmaceutically acceptable salt, compositions and methods of use. These novel compounds provide a treatment or prophylaxis of cognitive impairment, Alzheimer Disease, neurodegeneration and dementia.

Abstract: This invention relates to novel compounds having the structural formula (I) and to their pharmaceutically acceptable salt, compositions and methods of use. These novel compounds provide a treatment or prophylaxis of cognitive impairment, Alzheimer Disease, neurodegeneration and dementia.

Abstract: This invention relates to novel compounds having the structural formula I below: and to their pharmaceutically acceptable salt, compositions and methods of use. These novel compounds provide a treatment or prophylaxis of cognitive impairment, Alzheimer Disease, neurodegeneration and dementia.