Patents by Inventor Sajan Marokkey
Sajan Marokkey has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
-
Patent number: 8828748Abstract: Test structures and methods for semiconductor devices, lithography systems, and lithography processes are disclosed. In one embodiment, a method of manufacturing a semiconductor device includes using a lithography system to expose a layer of photosensitive material of a workpiece to energy through a lithography mask, the lithography mask including a plurality of first test patterns having a first phase shift and at least one plurality of second test patterns having at least one second phase shift. The layer of photosensitive material of the workpiece is developed, and features formed on the layer of photosensitive material from the plurality of first test patterns and the at least one plurality of second test patterns are measured to determine a optimal focus level or optimal dose of the lithography system for exposing the layer of photosensitive material of the workpiece.Type: GrantFiled: May 24, 2013Date of Patent: September 9, 2014Assignee: Infineon Technologies AGInventor: Sajan Marokkey
-
Patent number: 8715909Abstract: Multi-beam lithography systems and methods of manufacturing semiconductor devices using the same are disclosed. For example, the method utilizes non-coincidence of boundaries of electrical fields emanating from chrome on glass or phase shifted mask features distributed over two masks for the optimization of lithographic process windows, side lobe suppression, or pattern orientation dependent process window optimization employing one mask with polarization rotating film on the backside.Type: GrantFiled: October 5, 2007Date of Patent: May 6, 2014Assignee: Infineon Technologies AGInventors: Alois Gutmann, Henning Haffner, Sajan Marokkey, Chandrasekhar Sarma, Roderick Koehle
-
Patent number: 8518820Abstract: Mask sets, layout design, and methods for forming contacts in devices are described. In one embodiment, a semiconductor device includes a plurality of contacts disposed over a substrate, the plurality of contacts being disposed as rows and columns on an orthogonal grid, each row of the plurality of contacts is spaced from an neighboring row of the plurality of contacts by a first distance, and each column of the plurality of contacts is spaced from an neighboring column of the plurality of contacts by a second distance.Type: GrantFiled: November 21, 2011Date of Patent: August 27, 2013Assignee: Infineon Technologies AGInventors: Roberto Schiwon, Klaus Herold, Jenny Lian, Sajan Marokkey, Martin Ostermayr
-
Patent number: 8450122Abstract: Test structures and methods for semiconductor devices, lithography systems, and lithography processes are disclosed. In one embodiment, a method of manufacturing a semiconductor device includes using a lithography system to expose a layer of photosensitive material of a workpiece to energy through a lithography mask, the lithography mask including a plurality of first test patterns having a first phase shift and at least one plurality of second test patterns having at least one second phase shift. The layer of photosensitive material of the workpiece is developed, and features formed on the layer of photosensitive material from the plurality of first test patterns and the at least one plurality of second test patterns are measured to determine a optimal focus level or optimal dose of the lithography system for exposing the layer of photosensitive material of the workpiece.Type: GrantFiled: June 2, 2010Date of Patent: May 28, 2013Assignee: Infineon Technologies AGInventor: Sajan Marokkey
-
Patent number: 8377800Abstract: Mark and method for integrated circuit fabrication with polarized light lithography. A preferred embodiment comprises a first plurality of elements comprised of a first component type, wherein the first component type has a first polarization, and a second plurality of elements comprised of a second component type, wherein the second component type has a second polarization, wherein the first polarization and the second polarization are orthogonal, wherein adjacent elements are of different component types. The alignment marks can be used in an intensity based or a diffraction based alignment process.Type: GrantFiled: April 23, 2012Date of Patent: February 19, 2013Assignee: Infineon Technologies AGInventors: Sajan Marokkey, Chandrasekhar Sarma, Alois Gutmann
-
Patent number: 8330937Abstract: A lithography system with a stray light feedback system is disclosed. The stray light feedback helps control critical dimension (CD) within a stray light specification limit. A stray light dose control factor is calculated as a function of the stray light measured in the exposure tool and the sensitivity of the resist. The stray light dose control factor is used to adjust the exposure dose to achieve the desired CD. The stray light may be monitored, and if a threshold level of stray light is reached or exceeded, the use of the exposure tool may be discontinued for a particular type of semiconductor product, resist, or mask level, until the lens system is cleaned.Type: GrantFiled: July 29, 2009Date of Patent: December 11, 2012Assignees: Infineon Technologies AG, International Business Machines CorporationInventors: Sajan Marokkey, Wai-Kin Li, Todd C. Bailey
-
Publication number: 20120208341Abstract: Mark and method for integrated circuit fabrication with polarized light lithography. A preferred embodiment comprises a first plurality of elements comprised of a first component type, wherein the first component type has a first polarization, and a second plurality of elements comprised of a second component type, wherein the second component type has a second polarization, wherein the first polarization and the second polarization are orthogonal, wherein adjacent elements are of different component types. The alignment marks can be used in an intensity based or a diffraction based alignment process.Type: ApplicationFiled: April 23, 2012Publication date: August 16, 2012Applicant: INFINEON TECHNOLOGIES AGInventors: Sajan Marokkey, Chandrasekhar Sarma, Alois Gutmann
-
Patent number: 8203223Abstract: A target and method for use in polarized light lithography. A preferred embodiment comprises a first structure located on a reference layer, wherein the first structure is visible through a second layer, and a second structure located on the second layer, wherein the second structure is formed from a photomask containing a plurality of sub-structures oriented in a first orientation, wherein a polarized light is used to pattern the second structure onto the second layer, and wherein a polarization of the polarized light is the same as the orientation of the plurality of sub-structures. The position, size, and shape of the second structure is dependent upon a polarity of the polarized light, permitting a single design for an overlay target to be used with different polarities of polarized light.Type: GrantFiled: September 7, 2010Date of Patent: June 19, 2012Assignee: Infineon Technologies AGInventor: Sajan Marokkey
-
Patent number: 8183129Abstract: Mark and method for integrated circuit fabrication with polarized light lithography. A preferred embodiment comprises a first plurality of elements comprised of a first component type, wherein the first component type has a first polarization, and a second plurality of elements comprised of a second component type, wherein the second component type has a second polarization, wherein the first polarization and the second polarization are orthogonal, wherein adjacent elements are of different component types. The alignment marks can be used in an intensity based or a diffraction based alignment process.Type: GrantFiled: January 26, 2010Date of Patent: May 22, 2012Assignee: Infineon Technologies AGInventors: Sajan Marokkey, Chandrasekhar Sarma, Alois Gutmann
-
Publication number: 20120070977Abstract: Mask sets, layout design, and methods for forming contacts in devices are described. In one embodiment, a semiconductor device includes a plurality of contacts disposed over a substrate, the plurality of contacts being disposed as rows and columns on an orthogonal grid, each row of the plurality of contacts is spaced from an neighboring row of the plurality of contacts by a first distance, and each column of the plurality of contacts is spaced from an neighboring column of the plurality of contacts by a second distance.Type: ApplicationFiled: November 21, 2011Publication date: March 22, 2012Applicant: Infineon Technologies AGInventors: Roberto Schiwon, Klaus Herold, Jenny Lian, Sajan Marokkey, Martin Ostermayr
-
Patent number: 8071261Abstract: Lithography masks and methods of manufacture thereof are disclosed. For example, a method of manufacturing a lithography mask includes forming a stack over a substrate. The stack includes bottom attenuated phase shift material layers, intermediate opaque material layers, and finally top resist layers. The method further includes patterning the stack and then trimming the resist layers to uncover a portion of the opaque material layers. The uncovered opaque material layers are subsequently etched followed by removal of any remaining resist layers.Type: GrantFiled: July 20, 2007Date of Patent: December 6, 2011Assignee: Infineon Technologies AGInventors: Alois Gutmann, Sajan Marokkey, Henning Haffner, Chandrasekhar Sarma, Haoren Zhuang, Matthias Lipinski
-
Patent number: 7947431Abstract: Lithography masks and methods of manufacture thereof are disclosed. A preferred embodiment comprises a method of manufacturing a lithography mask. The method includes providing a substrate, forming a first pattern in a first region of the substrate, and forming a second pattern in a second region of the substrate, the second pattern comprising patterns for features oriented differently than patterns for features of the first pattern. The method includes affecting a polarization rotation of light differently in the first region than in the second region of the substrate.Type: GrantFiled: July 30, 2010Date of Patent: May 24, 2011Assignee: Infineon Technologies AGInventors: Chandrasekhar Sarma, Alois Gutmann, Henning Haffner, Sajan Marokkey, Josef Maynollo
-
Publication number: 20100330469Abstract: A target and method for use in polarized light lithography. A preferred embodiment comprises a first structure located on a reference layer, wherein the first structure is visible through a second layer, and a second structure located on the second layer, wherein the second structure is formed from a photomask containing a plurality of sub-structures oriented in a first orientation, wherein a polarized light is used to pattern the second structure onto the second layer, and wherein a polarization of the polarized light is the same as the orientation of the plurality of sub-structures. The position, size, and shape of the second structure is dependent upon a polarity of the polarized light, permitting a single design for an overlay target to be used with different polarities of polarized light.Type: ApplicationFiled: September 7, 2010Publication date: December 30, 2010Inventor: Sajan Marokkey
-
Publication number: 20100297398Abstract: Lithography masks and methods of manufacture thereof are disclosed. A preferred embodiment comprises a method of manufacturing a lithography mask. The method includes providing a substrate, forming a first pattern in a first region of the substrate, and forming a second pattern in a second region of the substrate, the second pattern comprising patterns for features oriented differently than patterns for features of the first pattern. The method includes affecting a polarization rotation of light differently in the first region than in the second region of the substrate.Type: ApplicationFiled: July 30, 2010Publication date: November 25, 2010Inventors: Chandrasekhar Sarma, Alois Gutmann, Henning Haffner, Sajan Marokkey, Josef Maynollo
-
Patent number: 7820458Abstract: Test structures and methods for semiconductor devices, lithography systems, and lithography processes are disclosed. In one embodiment, a method of manufacturing a semiconductor device includes using a lithography system to expose a layer of photosensitive material of a workpiece to energy through a lithography mask, the lithography mask including a plurality of first test patterns having a first phase shift and at least one plurality of second test patterns having at least one second phase shift. The layer of photosensitive material of the workpiece is developed, and features formed on the layer of photosensitive material from the plurality of first test patterns and the at least one plurality of second test patterns are measured to determine a optimal focus level or optimal dose of the lithography system for exposing the layer of photosensitive material of the workpiece.Type: GrantFiled: February 13, 2008Date of Patent: October 26, 2010Assignee: Infineon Technologies AGInventor: Sajan Marokkey
-
Patent number: 7807320Abstract: A target and method for use in polarized light lithography. A preferred embodiment comprises a first structure located on a reference layer, wherein the first structure is visible through a second layer, and a second structure located on the second layer, wherein the second structure is formed from a photomask containing a plurality of sub-structures oriented in a first orientation, wherein a polarized light is used to pattern the second structure onto the second layer, and wherein a polarization of the polarized light is the same as the orientation of the plurality of sub-structures. The position, size, and shape of the second structure is dependent upon a polarity of the polarized light, permitting a single design for an overlay target to be used with different polarities of polarized light.Type: GrantFiled: May 21, 2009Date of Patent: October 5, 2010Assignee: Infineon Technologies AGInventor: Sajan Marokkey
-
Publication number: 20100239964Abstract: Test structures and methods for semiconductor devices, lithography systems, and lithography processes are disclosed. In one embodiment, a method of manufacturing a semiconductor device includes using a lithography system to expose a layer of photosensitive material of a workpiece to energy through a lithography mask, the lithography mask including a plurality of first test patterns having a first phase shift and at least one plurality of second test patterns having at least one second phase shift. The layer of photosensitive material of the workpiece is developed, and features formed on the layer of photosensitive material from the plurality of first test patterns and the at least one plurality of second test patterns are measured to determine a optimal focus level or optimal dose of the lithography system for exposing the layer of photosensitive material of the workpiece.Type: ApplicationFiled: June 2, 2010Publication date: September 23, 2010Inventor: Sajan Marokkey
-
Patent number: 7799486Abstract: Lithography masks and methods of manufacture thereof are disclosed. A preferred embodiment comprises a method of manufacturing a lithography mask. The method includes providing a substrate, forming a first pattern in a first region of the substrate, and forming a second pattern in a second region of the substrate, the second pattern comprising patterns for features oriented differently than patterns for features of the first pattern. The method includes affecting a polarization rotation of light differently in the first region than in the second region of the substrate.Type: GrantFiled: November 21, 2006Date of Patent: September 21, 2010Assignee: Infineon Technologies AGInventors: Chandrasekhar Sarma, Alois Gutmann, Henning Haffner, Sajan Marokkey, Josef Maynollo
-
Publication number: 20100187611Abstract: Mask sets, layout design, and methods for forming contacts in devices are described. In one embodiment, a semiconductor device includes a plurality of contacts disposed over a substrate, the plurality of contacts being disposed as rows and columns on an orthogonal grid, each row of the plurality of contacts is spaced from an neighboring row of the plurality of contacts by a first distance, and each column of the plurality of contacts is spaced from an neighboring column of the plurality of contacts by a second distance.Type: ApplicationFiled: January 27, 2009Publication date: July 29, 2010Inventors: Roberto Schiwon, Klaus Herold, Jenny Lian, Sajan Marokkey, Martin Ostermayr
-
Publication number: 20100128270Abstract: Mark and method for integrated circuit fabrication with polarized light lithography. A preferred embodiment comprises a first plurality of elements comprised of a first component type, wherein the first component type has a first polarization, and a second plurality of elements comprised of a second component type, wherein the second component type has a second polarization, wherein the first polarization and the second polarization are orthogonal, wherein adjacent elements are of different component types. The alignment marks can be used in an intensity based or a diffraction based alignment process.Type: ApplicationFiled: January 26, 2010Publication date: May 27, 2010Inventors: Sajan Marokkey, Chandrasekhar Sarma, Alois Gutmann