Abstract: An electrocaloric effect element includes a laminate including an electrode layer mainly including Pt and a ceramic layer that are stacked, in which the ceramic layer has a perovskite structure and mainly includes a ceramic including Pb, Sc, and Ta, where a content ratio of Sc is y, a content ratio of Ta is 1?y, and a range of the y is about 0.450?y?about 0.495.

Abstract: The present application provides vanadium dioxide doped with Ti, or vanadium dioxide further doped with other atoms selected from the group of W, Ta, Mo, and Nb. The vanadium dioxide of the present application is excellent in moisture resistance and in which deterioration of endothermic characteristics due to moisture is suppressed.

Abstract: An oxide ceramic expressed by the general formula Sr2-xBaxCo2-yMgyFe12-zAlzO22, where 0.7?x?1.3, 0<y?0.8, and 0.8?z?1.2.

Abstract: A ceramic material has a composition represented by the formula: La1-x-yAEyMnO3 in which AE is at least one of Ca and Sr; x satisfies 0<x?about 0.20; and y satisfies 0<y?about 0.10.

Abstract: A ceramic material has a composition represented by the formula: La-1-x-yAEyMnO3 in which AE is at least one of Ca and Sr; x satisfies 0<x ?about 0.20; and y satisfies 0<y?about 0.10.

Abstract: A ceramic material has a composition represented by Cax?NaxMny?MyO12, wherein M denotes at least one of Ni and Cu, and x?, x, y?, and y satisfy any of (a), (b), and (c) in which x?+x=X and y?+y=Y: 0.9 7.0 ? X Y < 1.0 7.0 ; ( a ) at a condition of X Y = 1.0 7.0 , 0.03 8 ? x X + Y < 0.30 8 ? ? and ? ? 0 ? y X + Y ? 0.35 8 ; and ( b ) 1.0 7.0 < X Y ? 1.0 6.9 .

Abstract: An oxide ceramic represented by the general formula [Sr2?xBaxCo2?y(ZnuNi1?u)yFe12?zAlzO22]. In the formula, 0.7?x?1.3 and 0.8?z?1.2. y is 0?y?0.8 when 0.5?u?1.0 and is 0?y?1.6 when 0?u?0.5. y is preferably 0.4 or less. Further, a variable inductor as a ceramic electronic component has a component base body formed from the oxide ceramic.

Abstract: A ceramic material has a composition represented by Cax?NaxMny?MyO12, wherein M denotes at least one of Ni and Cu, and x?, x, y?, and y satisfy any of (a), (b), and (c) in which x?+x=X and y?+y=Y: 0.9 7.0 ? X Y < 1.0 7.0 ; ( a ) at a condition of X Y = 1.0 7.0 , 0.03 8 ? x X + Y < 0.30 8 ? ? and ? ? 0 ? y X + Y ? 0.35 8 ; and ( b ) 1.0 7.0 < X Y ? 1.0 6.9 .

Abstract: The present disclosure provides a ceramic material containing a vanadium oxide, and 50 to 400 ppm by mass of nitrogen with respect to the vanadium oxide. The ceramic material according to the present disclosure less varies in the amount of heat absorption. A cooling device comprising the ceramic material is also provided.

Abstract: The present application provides vanadium dioxide doped with Ti, or vanadium dioxide further doped with other atoms selected from the group of W, Ta, Mo, and Nb. The vanadium dioxide of the present application is excellent in moisture resistance and in which deterioration of endothermic characteristics due to moisture is suppressed.

Abstract: An oxide ceramic having a principal component formed of a ferrite compound containing at least Sr, Co, and Fe, and zirconium in an amount of 0.05 to 1.0 wt. % on an oxide equivalent basis, and a ceramic electronic component using the oxide ceramic.

Abstract: The present disclosure provides a ceramic material containing a vanadium oxide, and 50 to 400 ppm by mass of nitrogen with respect to the vanadium oxide. The ceramic material according to the present disclosure less varies in the amount of heat absorption. A cooling device comprising the ceramic material is also provided.

Abstract: An oxide ceramic expressed by the general formula Sr2-xBaxCo2-yMgyFe12-zAlzO22, where 0.7?x?1.3, 0<y?0.8, and 0.8?z?1.2.

Abstract: A resistance switching device having a high resistance variation ratio, an excellent response characteristic, an excellent resistance memory characteristic (retention characteristics) and an excellent repeat resistance. The resistance switching device comprises an n-type oxide semiconductor and first and second electrodes which are disposed so as to interpose at least a part of the n-type oxide semiconductor therebetween wherein a Schottky junction which provides resistance variation/memory characteristics by the application of voltage having different polarities between the first and second electrodes is formed at an interface between the n-type oxide semiconductor and the first electrode; and the first electrode is positioned such that it is in contact with the n-type oxide semiconductor, and has a lower layer which is formed from Au oxide or a Pt oxide or Au or Pt containing oxygen having the thickness of 1-50 nm.

Abstract: An oxide ceramic represented by the general formula [Sr2?xBaxCo2?y(ZnuNi1?u)yFe12?zAlzO22]. In the formula, 0.7?x?1.3 and 0.8?z?1.2. y is 0?y?0.8 when 0.5?u?1.0 and is 0?y?1.6 when 0?u?0.5. y is preferably 0.4 or less. Further, a variable inductor as a ceramic electronic component has a component base body formed from the oxide ceramic.

Abstract: A resistance element that includes a resistor made of a thin film containing VO2 as a main component and at least one of W, Nb, Mo and Ti as an additive element. The thin film has a plurality of layer regions distributed in the direction of thickness thereof, and amounts of the additive elements doped in the layer regions are different from each other between the adjacent layer regions. Terminal electrodes are disposed such that a current flows through the plural layer regions of the resistor. Preferably, an interval at which the plural layer regions are distributed is selected to be not less than 8 nm and not more than 35 nm.

Abstract: An oxide ceramic having a principal component formed of a ferrite compound containing at least Sr, Co, and Fe, and zirconium in an amount of 0.05 to 1.0 wt. % on an oxide equivalent basis, and a ceramic electronic component using the oxide ceramic.

Abstract: A resistive switching memory device is provided with first to third electrodes. The first electrode forms a Schottky barrier which can develop a rectifying property and resistance change characteristics at an interface between the first electrode and an oxide semiconductor. The third electrode is made of a material which provides an ohmic contact with the oxide semiconductor. A control voltage is applied between the first and second electrodes, and a driving voltage is applied between the first and third electrodes.

Abstract: Provided is a resistive element which is excellent in inrush current resistance even in the case of having a surface-mountable small chip shape. The resistive element has an element main body composed of a semiconductor ceramic in which a main constituent thereof is composed of a Mn compound represented by the general formula (Nd1-xMx)yBazMn2O6 (M is at least one rare-earth element selected from Sm, Gd, Eu, Tb, Dy, Ho, Er, and Y), and x, y, and z respectively meet the conditions of: 0.05?x?0.4; 0.80?y?1.2; and 0.80?z?1.2 in the chemical formula.

Abstract: Provided is a resistive element which has excellent inrush current resistance, and can suppress heat generation in a steady state. The resistive element has an element main body of a semiconductor ceramic in which the main constituent has a structure of R11-xR2xBaMn2O6 in which 0.05?x?1.0 when R1 is Nd and R2 is at least one of Sm, Eu and Gd; 0.05?x?0.8 when R1 is Nd and R2 is at least one of Tb, Dy, Ho, Er, and Y; 0?x?0.4 when R1 is at least one of Sm, Eu, and Gd and R2 is at least one of Tb, Dy, Ho, and Y; and 0?x?1.0 when R1 is at least one of Sm, Eu, and Gd and R2 is at least one of Sm, Eu, and Gd, but the Sm, Eu, and/or Gd in R1 is different from that in R2.