Abstract: resistance switching device having a high resistance variation ratio, an excellent response characteristic, an excellent resistance memory characteristic (retention characteristics) and an excellent repeat resistance. The resistance switching device comprises an n-type oxide semiconductor and first and second electrodes which are disposed so as to interpose at least a part of the n-type oxide semiconductor therebetween wherein a Schottky junction which provides resistance variation/memory characteristics by the application of voltage having different polarities between the first and second electrodes is formed at an interface between the n-type oxide semiconductor and the first electrode; and the first electrode is positioned such that it is in contact with the n-type oxide semiconductor, and has a lower layer which is formed from Au oxide or a Pt oxide or Au or Pt containing oxygen having the thickness of 1-50 nm.

Abstract: In order to provide a magnetic impedance element capable of achieving a large magnetic impedance effect at room temperature or higher, the magnetic impedance element includes a ceramic body represented by the chemical formula Sr2-xBaxFeyMozO6 (0.8?x?2.0, y+z=2), and at least two electrode terminals are provided on the ceramic body.

Abstract: A resistance element that includes a resistor made of a thin film containing VO2 as a main component and at least one of W, Nb, Mo and Ti as an additive element. The thin film has a plurality of layer regions distributed in the direction of thickness thereof, and amounts of the additive elements doped in the layer regions are different from each other between the adjacent layer regions. Terminal electrodes are disposed such that a current flows through the plural layer regions of the resistor. Preferably, an interval at which the plural layer regions are distributed is selected to be not less than 8 nm and not more than 35 nm.

Abstract: A resistive memory element that includes an element body and at least a pair of electrodes opposed to each other with at least a portion of the element body interposed therebetween. The element body is made of an oxide semiconductor as a polycrystalline body, which has a composition represented by the general formula: Ti1-xMxO2, wherein M is selected from at least one of Fe, Co, Ni, and Cu; and 0.005?x?0.05. The first electrode of the pair of electrodes is made of a material which can form a Schottky barrier which can develop a rectifying property and resistance change characteristics in an interface region between the first electrode and the element body. The second electrode is made of a material which provides a more ohmic junction to the element body as compared to that with the first electrode.

Abstract: Provided is a resistive element which is excellent in inrush current resistance even in the case of having a surface-mountable small chip shape. The resistive element has an element main body composed of a semiconductor ceramic in which a main constituent thereof is composed of a Mn compound represented by the general formula (Nd1-xMx)yBazMn2O6 (M is at least one rare-earth element selected from Sm, Gd, Eu, Tb, Dy, Ho, Er, and Y), and x, y, and z respectively meet the conditions of: 0.05?x?0.4; 0.80?y?1.2; and 0.80?z?1.2 in the chemical formula.

Abstract: A resistive memory element that includes an element body and at least a pair of electrodes opposed to each other with at least a portion of the element body interposed therebetween. The element body is made of an oxide semiconductor which has a composition represented by the general formula: (Ba1-xSrx)Ti1-yMyO3 (wherein M is at least one from among Mn, Fe, and Co; 0?x?1.0; and 0.005?y?0.05). The first electrode of the pair of electrodes is made of a material which can form a Schottky barrier which can develop a rectifying property and resistance change characteristics in an interface region between the first electrode and the element body. The second electrode is made of a material which provides a more ohmic junction to the element body as compared with the first electrode.

Abstract: A resistive element which includes an element body that contains, as its main constituent, an oxide conductor represented by RBaMn2O6 (wherein R is at least one selected from among Nd, Sm, Eu, Gd, Tb, Dy, Ho, and Y) and which has a negative temperature coefficient; and a pair of electrodes for applying an electric field to a surface layer section of the element body. When the resistive element is used in, for example, an infrared light sensor, infrared light is detected in such a way that measures an electric current flowing through the element body, which is correlated with the resistance of the element body, when an electric field with an electric field intensity of 100 V/cm or more is applied to the element body.

Abstract: A resistive switching memory device is provided with first to third electrodes. The first electrode forms a Schottky barrier which can develop a rectifying property and resistance change characteristics at an interface between the first electrode and an oxide semiconductor. The third electrode is made of a material which provides an ohmic contact with the oxide semiconductor. A control voltage is applied between the first and second electrodes, and a driving voltage is applied between the first and third electrodes.

Abstract: A resistive memory element that includes an element body and at least a pair of electrodes opposed to each other with at least a portion of the element body interposed therebetween. The element body is made of an oxide semiconductor which has a composition represented by the general formula: (Ba1-xSrx)Ti1-yMyO3 (wherein M is at least one from among Mn, Fe, and Co; 0?x?1.0; and 0.005?y?0.05). The first electrode of the pair of electrodes is made of a material which can form a Schottky barrier which can develop a rectifying property and resistance change characteristics in an interface region between the first electrode and the element body. The second electrode is made of a material which provides a more ohmic junction to the element body as compared with the first electrode.

Abstract: A resistive memory element that includes an element body and at least a pair of electrodes opposed to each other with at least a portion of the element body interposed therebetween. The element body is made of an oxide semiconductor as a polycrystalline body, which has a composition represented by the general formula: Ti1-xMxO2, wherein M is selected from at least one of Fe, Co, Ni, and Cu; and 0.005?x?0.05. The first electrode of the pair of electrodes is made of a material which can form a Schottky barrier which can develop a rectifying property and resistance change characteristics in an interface region between the first electrode and the element body. The second electrode is made of a material which provides a more ohmic junction to the element body as compared to that with the first electrode.

Abstract: A resistance memory element is provided which has a relatively high switching voltage and whose resistance can be changed at a relatively high rate. The resistance memory element includes an elementary body and a pair of electrodes opposing each other with at least part of the elementary body therebetween. The elementary body is made of a semiconductor ceramic expressed by a formula: {(Sr1-xMx)1-yAy}(Ti1-zBz)O3 (wherein M represents at least one of Ba and Ca, A represents at least one element selected from the group consisting of Y and rare earth elements, and B represents at least one of Nb and Ta), and satisfies 0<x?0.5 and 0.001?y+z?0.02 (where 0?y?0.02 and 0?z?0.02); 0.5<x?0.8 and 0.003?y+z?0.02 (where 0?y?0.02 and 0?z?0.02); or 0.8<x?1.0 and 0.005?y+z?0.01 (where 0?y?0.02 and 0?z?0.02).

Abstract: In order to provide a magnetic impedance element capable of achieving a large magnetic impedance effect at room temperature or higher, the magnetic impedance element includes a ceramic body represented by the chemical formula Sr2-xBaxFeyMozO6 (0.8?x?2.0, y+z=2), and at least two electrode terminals are provided on the ceramic body.

Abstract: A resistance memory element includes an elementary body and opposing electrodes separated by at least a portion of the elementary body. The elementary body is preferably made of a strontium titanate-based semiconductor ceramic expressed by the formula: (Sr1?xAx)v(Ti1?yBy)wO3 (where A represents at least one element selected from the group consisting of Y and rare earth elements, and B represents at least one of Nb and Ta), and satisfies the relationships 0.001?x+y?0.02 (where 0?x?0.02 and 0?y?0.02) and 0.87?v/W?1.030. This semiconductor ceramic changes the switching voltage depending on, for example, the number of grain boundaries in the portion between the opposing electrodes.

Abstract: A resistance memory element is provided which has a relatively high switching voltage and whose resistance can be changed at a relatively high rate. The resistance memory element includes an elementary body and a pair of electrodes opposing each other with at least part of the elementary body therebetween. The elementary body is made of a semiconductor ceramic expressed by a formula: {(Sr1-xMx)1-yAy}(Ti1-zBz)O3 (wherein M represents at least one of Ba and Ca, A represents at least one element selected from the group consisting of Y and rare earth elements, and B represents at least one of Nb and Ta), and satisfies 0<x?0.5 and 0.001?y+z?0.02 (where 0?y?0.02 and 0?z?0.02); 0.5<x?0.8 and 0.003?y+z?0.02 (where 0?y?0.02 and 0?z?0.02); or 0.8<x?1.0 and 0.005?y+z?0.01 (where 0?y?0.02 and 0?z?0.02).

Abstract: A resistance memory element includes an elementary body and opposing electrodes separated by at least a portion of the elementary body. The elementary body is preferably made of a strontium titanate-based semiconductor ceramic expressed by the formula: (Sr1-xAx)v(Ti1-yBy)wO3 (where A represents at least one element selected from the group consisting of Y and rare earth elements, and B represents at least one of Nb and Ta), and satisfies the relationships 0.001?x+y?0.02 (where 0?x?and 0?y?0.02) and 0.87?v/W?1.030. This semiconductor ceramic changes the switching voltage depending on, for example, the number of grain boundaries in the portion between the opposing electrodes.

Abstract: A varistor is provided which can be driven at a low voltage, has a small leak current, and can realize a high ESD resistance and a high surge resistance. The varistor is formed using a ceramic composition for a varistor which contains zinc oxide as a primary component and sub-components including praseodymium at a content of 0.05 to 3.0 atomic percent of the total, cobalt at a content of 0.5 to 10 atom percent of the total, at least one of potassium, sodium, and lithium at a total content of 0.005 to 0.5 atom percent of the total, at least one of aluminum, gallium, and indium at a total content of 2×10?5 to 0.5 atom percent of the total, and zirconium at a content of 0.005 to 5.0 atom percent of the total.

Abstract: A varistor is provided which can be driven at a low voltage, has a small leak current, and can realize a high ESD resistance and a high surge resistance. The varistor is formed using a ceramic composition for a varistor which contains zinc oxide as a primary component and sub-components including praseodymium at a content of 0.05 to 3.0 atomic percent of the total, cobalt at a content of 0.5 to 10 atom percent of the total, at least one of potassium, sodium, and lithium at a total content of 0.005 to 0.5 atom percent of the total, at least one of aluminum, gallium, and indium at a total content of 2×10?5 to 0.5 atom percent of the total, and zirconium at a content of 0.005 to 5.0 atom percent of the total.