Patents by Inventor Salah Boussaad

Salah Boussaad has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 6784999
    Abstract: A device and method of detecting surface plasmon resonance for sensing molecules or conformational changes in molecules with high resolution and fast response time is disclosed. Light from a light source (14) is focused through a prism onto a metal thin film (15) on which sample molecules to be detected are adsorbed. The total internal reflection of the laser/incident light is collected with a differential position or intensity sensitive photo-detecting device instead of a single cell or an array of photo-detectors (12) that are widely used in previous works. The ratio of the differential signal to the sum signal of the differential position or intensity sensitive photo-detecting device (12) provides an accurate measurement of the shift in the surface plasmon resonance angle caused by the adsorption of molecules onto the metal films (15) or by conformational changes in the adsorbed molecules.
    Type: Grant
    Filed: November 13, 2001
    Date of Patent: August 31, 2004
    Assignee: The Florida International University Board of Trustees
    Inventors: Nongjian Tao, Salah Boussaad, Wenlue Huang
  • Patent number: 6737286
    Abstract: A method for forming atomic-scale contacts and atomic-scale gaps between two electrodes is disclosed. The method provides for applying a voltage between two electrodes in a circuit with a resistor. The applied voltage etches metal ions off one electrode and deposits the metal ions onto the second electrode. The metal ions are deposited on the sharpest point of the second electrode, causing the second electrode to grow towards the first electrode until an atomic-scale contact is formed. By increasing the magnitude of the resistor, the etching and deposition process will terminate prior to contact, forming an atomic-scale gap. The atomic-scale contacts and gaps formed according to this method are useful as a variety of nanosensors including chemical sensors, biosensors, hydrogen ion sensors, heavy metal ion sensors, magnetoresistive sensors, and molecular switches.
    Type: Grant
    Filed: November 27, 2002
    Date of Patent: May 18, 2004
    Assignee: Arizona Board of Regents
    Inventors: Nongjian Tao, Salah Boussaad
  • Publication number: 20040067646
    Abstract: A method for forming atomic-scale contacts and atomic-scale gaps between two electrodes is disclosed. The method provides for applying a voltage between two electrodes in a circuit with a resistor. The applied voltage etches metal ions off one electrode and deposits the metal ions onto the second electrode. The metal ions are deposited on the sharpest point of the second electrode, causing the second electrode to grow towards the first electrode until an atomic-scale contact is formed. By increasing the magnitude of the resistor, the etching and deposition process will terminate prior to contact, forming an atomic-scale gap. The atomic-scale contacts and gaps formed according to this method are useful as a variety of nanosensors including chemical sensors, biosensors, hydrogen ion sensors, heavy metal ion sensors, magnetoresistive sensors, and molecular switches.
    Type: Application
    Filed: November 27, 2002
    Publication date: April 8, 2004
    Inventors: Nongjian Tao, Salah Boussaad