Abstract: A nonvolatile memory device is operable in a serial mode and in a parallel mode. The architecture of the nonvolatile memory device is based upon the structure already present in a standard memory, but includes certain modifications. These modifications include the addition of a timing state machine for the various memory access phases (i.e., writing and reading data), and the addition of an internal bus and related logic circuits for disabling the internal address bus of the standard memory when the nonvolatile memory device operates in the serial mode.

Abstract: A circuit architecture and a method perform a page programming in non-volatile memory electronic devices equipped with a memory cell matrix and an SPI serial communication interface, as well as circuit portions associated to the cell matrix and responsible for the addressing, decoding, reading, writing and erasing of the memory cell content. Advantageously, a buffer memory bank is provided to store and output data during the page programming in the pseudo-serial mode through the interface. Data latching is performed one bit at a time and the following outputting occurs instead with at least two bytes at a time.

Abstract: A memory device is configured for communicating with one of two different serial protocols, respectively an LPC or an SPI protocol, as well as with a parallel communication protocol through a multi-protocol interface while requiring only a single additional pin as compared to a standard memory device accessible with a parallel communication protocol. This result is achieved by exploiting the same pin for providing a timing signal for serial mode communications or an address multiplexing signal for parallel mode communications. The additional pin is used for conveying a start signal of an A/AMUX parallel communication protocol. The interface includes logic circuits that generate an enable signal for the standard memory core of the memory device.

Abstract: An integrated circuit includes a standard memory, having an addressing parallelism and a data transfer parallelism, and a multiprotocol serial communication interface, configurable for interfacing the memory with a selected one among at least a first and a second external serial buses. The external serial buses each having respectively a first and a second parallelism of transfer of address codes for the memory and data words where the second parallelism is smaller than the first parallelism and the first parallelism is smaller than the addressing parallelism and the data transfer parallelism of the memory. The multiprotocol serial communication interface includes a storage register of address codes, a storage register of data words read from the memory.

Abstract: An electronic memory device monolithically integrated in semiconductor has a low pin count (LPC) serial interface. The memory device includes a memory cell array and associated row and column decode circuits. The memory device also includes a bank of T-latch registers to be addressed and accessed in a test mode for serially loading specific test data therein. The serially loading includes activating a test mode of operation by an address storage block for generating a corresponding signal, enabling the bank of T-latch registers in the device to serially receive a predetermined data set, and loading test data into the T-latch registers by using a LPC serial communication protocol.

Abstract: An electronic memory device monolithically integrated in semiconductor has a low pin count (LPC) serial interface. The memory device includes a memory cell array and associated row and column decode circuits. The memory device also includes a bank of T-latch registers to be addressed and accessed in a test mode for serially loading specific test data therein. The serially loading includes activating a test mode of operation by an address storage block for generating a corresponding signal, enabling the bank of T-latch registers in the device to serially receive a predetermined data set, and loading test data into the T-latch registers by using a LPC serial communication protocol.

Abstract: A memory device includes an internal address bus, and first and second internal data busses. A memory receives from the internal address bus an address of memory data to be read, and transfers read memory data in blocks of N bits to the first internal data bus. An address storing circuit is coupled to the internal address bus for storing the address of the memory data to be read. An array of latches is coupled to the first internal data bus for storing the read memory data received therefrom. The array of latches includes two banks of latches. Each bank has N latches and is controlled independently from the other bank by respective commands, and each bank stores bits present on the first internal data bus upon receiving the respective commands. The second internal data bus is also connected to the array of latches.

Abstract: The invention relates to a method for testing non-volatile memory devices that have at least one parallel communication interface, and a conventional matrix of non-volatile memory cells with respective reading, changing and erasing circuits, wherein during the testing procedure, a reading mode is entered for reading a memory location upon the rise edge of a control signal producing a corresponding ATD signal. Advantageously in the invention, a subsequent reading step is started also upon the fall edge of the control signal.

Abstract: The invention provides a protocol cycle during which a memory address and all the data bytes to be written are transmitted, and the writing process is carried out only once for all the transmitted data bytes, by writing a first byte in the memory sector corresponding to a first address generated by resetting to zero the 2 least significant bits of the transmitted address and all the other transmitted bytes in successive addresses. The method includes writing a certain number N of data bytes, in consecutive memory addresses in a memory array of a memory device, and includes unprotecting the memory sectors in which data are to be written, communicating the programming command to the memory device, communicating to the memory device the bits to be stored and specifying a relative memory address of a sector to write in, and writing the data bits in the memory.

Abstract: The memory device of the invention outputs the read data in a time starting from the rising edge of the external clock that is shorter than that of other known devices, because the output buffer has an array of master-slave pairs of flip-flops synchronized by respective timing signals derived from the internal clock signal. The array receives data from the state machine through the second internal bus and provides the data to be output to the output stage of the buffer enabled by the state machine. A logic circuit generates timing signals for the master-slave flip-flops, respectively as logic NAND and logic AND of the internal clock signal and of an enabling signal of the output stage of the buffer generated by the state machine. Moreover, the memory device includes a circuit, synchronized by the internal clock signal, that introduces a delay of the enabling signal of the output stage of the buffer equivalent to a period of the internal clock signal.

Abstract: An architecture of a nonvolatile memory device, though not requiring dedicated pins and by introducing circuit modifications that require a negligible additional silicon area in the serial interface, allows a selection between at least two different serial communication protocols, thus multiplying the occasions of employment of the same device. The selection of one or of the another serial communication protocol is carried out by setting, during the testing on wafer (EWS) of the devices being fabricated, a certain UPROM cell of the array of UPROM cells that is normally present in a standard nonvolatile memory device for setting during the fabrication the characteristics of ATD, redundancy and other functions of the memory device. Alternatively, the customer can make the selection by placing an appropriate signal level on a specified pin of the memory device.

Abstract: A nonvolatile memory device is operable in a serial mode and in a parallel mode. The architecture of the nonvolatile memory device is based upon the structure already present in a standard memory, but includes certain modifications. These modifications include the addition of a timing state machine for the various memory access phases (i.e., writing and reading data), and the addition of an internal bus and related logic circuits for disabling the internal address bus of the standard memory when the nonvolatile memory device operates in the serial mode.

Abstract: A hybrid architecture for realizing a random numbers generator comprising a digital circuitry portion able to provide for a random bytes sequence as well as an analog circuitry portion able to provide a seed of the true random type is described.

Abstract: A power-on reset circuit connected to a supply line feeding a supply voltage, the circuit including an output terminal supplying a power-on reset signal; a divider connected between the supply line (36) and ground and having an intermediate node supplying a division voltage correlated to the supply voltage; an inverter having an input connected to the intermediate node and an output connected to the output terminal and supplying a reset logic signal; and a deactivation branch coupled to the supply line and the intermediate node. The deactivation branch preventing switching of the power-on reset signal on the output terminal when the supply voltage is higher than a deactivation voltage.

Abstract: A power-on reset circuit connected to a supply line feeding a supply voltage, the circuit including an output terminal supplying a power-on reset signal; a divider connected between the supply line (36) and ground and having an intermediate node supplying a division voltage correlated to the supply voltage; an inverter having an input connected to the intermediate node and an output connected to the output terminal and supplying a reset logic signal; and a deactivation branch coupled to the supply line and the intermediate node. The deactivation branch preventing switching of the power-on reset signal on the output terminal when the supply voltage is higher than a deactivation voltage.

Abstract: A redundancy UPROM cell includes at least one memory element of EPROM or Flash type, having a control terminal and a conduction terminal to be biased, an inverter register connected to the memory element by at least one MOS transistor. Such cell also includes a pass transistor which connects said conduction terminal to a data line and a pull-up transistor which connects the data line to a supply voltage reference. The UPROM cell has the great advantage to result in smaller dimensions in comparison with the cells of known type, at equal final functions and performances being assumed.

Abstract: A content addressable memory (CAM) protection circuit includes a memory cell having a read terminal for reading contents of the memory cell; a pass transistor coupled to the read terminal; and a latch having a first inverter with an input terminal and an output terminal coupled to the read terminal by the pass transistor and a second inverter with input and output terminals respectively coupled to the output and input terminals of the first inverter. The first inverter includes a pull-down transistor coupled between the output terminal of the first inverter and a first voltage reference and having a control terminal coupled to the input terminal of the latch and a pull-up transistor coupled between the output terminal of the first inverter and a second voltage reference and having a control terminal coupled to the input terminal of the latch.