Patents by Inventor Sam Gat-Shang Chu

Sam Gat-Shang Chu has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 6046606
    Abstract: A method and apparatus is effective to preserve logic state potential levels in logic circuitry notwithstanding alpha particle collisions. Cross-coupled circuitry, including active devices, are implemented in a complementary logic circuit arrangement to hold current logic values in the event of a premature switching such as a switching that may be induced by alpha particle collision with the semiconductor logic circuit. Stabilizing transistor switching devices are arranged to sense an inappropriate or premature switching initiation and respond thereto by operating to maintain the appropriate logic levels within the logic circuitry. In one embodiment, the internal node of an upper circuit in a dual-rail logic circuit is connected to a gate terminal of a cross-coupled PFET device in the lower circuit.
    Type: Grant
    Filed: January 21, 1998
    Date of Patent: April 4, 2000
    Assignee: International Business Machines Corporation
    Inventors: Sam Gat-Shang Chu, Visweswara Rao Kodali, Michael Ju Hyeok Lee
  • Patent number: 6002271
    Abstract: Circuitry for eliminating charge sharing noise in MOS dynamic logic circuits is described. Dynamic logic circuits having stacks of MOS devices controlling the state of a common node defining the output logic state of the circuit are susceptible to charge sharing noise. This noise ultimately arises from leakage and stray capacitances at the nodes between MOS devices in each stack which the common node must supply. The noise is eliminated by employing MOS devices associated with the MOS devices in the stacks to couple the nodes between stack MOS devices to a supply voltage until their associated stack device changes logic state. On the changing state of the associated stack device, the node charging MOS device turns off, allowing the nodes to assume states defined by the input signals to the dynamic logic circuit.
    Type: Grant
    Filed: May 12, 1997
    Date of Patent: December 14, 1999
    Assignee: International Business Machines Corporation
    Inventors: Sam Gat-Shang Chu, Visweswara Rao Kodali, Michael Ju Hyeok Lee
  • Patent number: 5852373
    Abstract: A dynamic logic circuit is capable of receiving both dynamic and static input signals during both the precharge and evaluate phases of the logic circuit, and the static input signal is permitted to switch from both a low level to a high level and a high level to a low level during such stages and the logic circuit is still capable of correctly evaluating the implemented logical operation on the static and dynamic input signals. This is performed in CMOS by coupling a PFET between the internal precharge node and a voltage reference source where the gate electrode of the PFET device receives the static input signal.
    Type: Grant
    Filed: September 30, 1996
    Date of Patent: December 22, 1998
    Assignee: International Business Machines Corporation
    Inventors: Sam Gat-Shang Chu, Visweswara Rao Kodali, Michael Ju Hyeok Lee