Patents by Inventor Samantha S. H. Tan
Samantha S. H. Tan has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20240145272Abstract: Methods for making thin-films on semiconductor substrates, which may be patterned using EUV, include: depositing the organometallic polymer-like material onto the surface of the semiconductor substrate, exposing the surface to EUV to form a pattern, and developing the pattern for later transfer to underlying layers. The depositing operations may be performed by chemical vapor deposition (CVD), atomic layer deposition (ALD), and ALD with a CVD component, such as a discontinuous, ALD-like process in which metal precursors and counter-reactants are separated in either time or space.Type: ApplicationFiled: October 5, 2023Publication date: May 2, 2024Inventors: Jengyi YU, Samantha S.H. TAN, Mohammed Haroon ALVI, Richard WISE, Yang PAN, Richard Alan GOTTSCHO, Adrien LAVOIE, Sivananda Krishnan KANAKASABAPATHY, Timothy William WEIDMAN, Qinghuang LIN, Jerome S. HUBACEK
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Publication number: 20240087904Abstract: Tin oxide films are used as spacers and hardmasks in semiconductor device manufacturing. In one method, tin oxide layer (e.g., spacer footing) needs to be selectively etched in a presence of an exposed silicon-containing layer, such as SiOC, SiON, SiONC, amorphous silicon, SiC, or SiN. In order to reduce damage to the silicon-containing layer the process involves passivating the silicon-containing layer towards a tin oxide etch chemistry, etching the tin oxide, and repeating passivation and etch in an alternating fashion. For example, passivation and etch can be each performed between 2-50 times. In one implementation, passivation is performed by treating the substrate with an oxygen-containing reactant, activated in a plasma, and the tin oxide etching is performed by a chlorine-based chemistry, such as using a mixture of Cl2 and BCl3.Type: ApplicationFiled: November 8, 2023Publication date: March 14, 2024Inventors: Seongjun Heo, Jengyi Yu, Chen-Wei Liang, Alan J. Jensen, Samantha S.H. Tan
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Publication number: 20240038539Abstract: Selective deposition of a sacrificial material on a semiconductor substrate, the substrate having a surface with a plurality of regions of substrate materials having different selectivities for the sacrificial material, may be conducted such that substantial deposition of the sacrificial material occurs on a first region of the substrate surface, and no substantial deposition occurs on a second region of the substrate surface. Deposition of a non-sacrificial material may then be conducted on the substrate, such that substantial deposition of the non-sacrificial material occurs on the second region and no substantial deposition of the non-sacrificial material occurs on the first region. The sacrificial material may then be removed such that net deposition of the non-sacrificial material occurs substantially only on the second region.Type: ApplicationFiled: October 12, 2023Publication date: February 1, 2024Inventors: Kashish Sharma, Taeseung Kim, Samantha S.H. Tan, Dennis M. Hausmann
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Patent number: 11848212Abstract: Tin oxide films are used as spacers and hardmasks in semiconductor device manufacturing. In one method, tin oxide layer (e.g., spacer footing) needs to be selectively etched in a presence of an exposed silicon-containing layer, such as SiOC, SiON, SiONC, amorphous silicon, SiC, or SiN. In order to reduce damage to the silicon-containing layer the process involves passivating the silicon-containing layer towards a tin oxide etch chemistry, etching the tin oxide, and repeating passivation and etch in an alternating fashion. For example, passivation and etch can be each performed between 2-50 times. In one implementation, passivation is performed by treating the substrate with an oxygen-containing reactant, activated in a plasma, and the tin oxide etching is performed by a chlorine-based chemistry, such as using a mixture of Cl2 and BCl3.Type: GrantFiled: November 17, 2022Date of Patent: December 19, 2023Assignee: Lam Research CorporationInventors: Seongjun Heo, Jengyi Yu, Chen-Wei Liang, Alan J. Jensen, Samantha S. H. Tan
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Publication number: 20230314946Abstract: The present disclosure relates to a film formed with a metal precursor and an organic precursor, as well as methods for forming and employing such films. The film can be employed as a photopatternable film or a radiation-sensitive film. In particular embodiments, the film includes alternating layers of metal-containing layers and organic layers. In other embodiments, the film includes a matrix of deposited metal and organic constituents.Type: ApplicationFiled: July 16, 2021Publication date: October 5, 2023Inventors: Eric Calvin Hansen, Timothy William Weidman, Chenghao Wu, Qinghuang Lin, Kyle Jordan Blakeney, Adrien LaVoie, Sivananda Krishnan Kanakasabapathy, Samantha S.H. Tan, Richard Wise, Yang Pan, Younghee Lee, Katie Lynn Nardi, Kevin Li Gu, Boris Volosskiy
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Publication number: 20230290657Abstract: Methods for making thin-films on semiconductor substrates, which may be patterned using EUV, include: depositing the organometallic polymer-like material onto the surface of the semiconductor substrate, exposing the surface to EUV to form a pattern, and developing the pattern for later transfer to underlying layers. The depositing operations may be performed by chemical vapor deposition (CVD), atomic layer deposition (ALD), and ALD with a CVD component, such as a discontinuous, ALD-like process in which metal precursors and counter-reactants are separated in either time or space.Type: ApplicationFiled: March 15, 2023Publication date: September 14, 2023Inventors: Jengyi Yu, Samantha S.H. Tan, Mohammed Haroon Alvi, Richard Wise, Yang Pan, Richard Alan Gottscho, Adrien LaVoie, Sivananda Krishnan Kanakasabapathy, Timothy William Weidman, Qinghuang Lin, Jerome S. Hubacek
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Publication number: 20230230811Abstract: Techniques described herein relate to methods, apparatus, and systems for promoting adhesion between a substrate and a metal-containing photoresist. For instance, the method may include receiving the substrate in a reaction chamber, the substrate having a first material exposed on its surface, the first material including a silicon-based material and/or a carbon-based material; generating a plasma from a plasma generation gas source that is substantially free of silicon, where the plasma includes chemical functional groups; exposing the substrate to the plasma to modify the surface of the substrate by forming bonds between the first material and chemical functional groups from the plasma; and depositing the metal-containing photoresist on the modified surface of the substrate, where the bonds between the first material and the chemical functional groups promote adhesion between the substrate and the metal-containing photoresist.Type: ApplicationFiled: May 25, 2021Publication date: July 20, 2023Inventors: Jengyi Yu, Da Li, Younghee Lee, Samantha S.H. Tan, Alan J. Jensen, Jun Xue, Mary Anne Manumpil
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Publication number: 20230197459Abstract: Tin oxide films are used as spacers and hardmasks in semiconductor device manufacturing. In one method, tin oxide layer (e.g., spacer footing) needs to be selectively etched in a presence of an exposed silicon-containing layer, such as SiOC, SiON, SiONC, amorphous silicon, SiC, or SiN. In order to reduce damage to the silicon-containing layer the process involves passivating the silicon-containing layer towards a tin oxide etch chemistry, etching the tin oxide, and repeating passivation and etch in an alternating fashion. For example, passivation and etch can be each performed between 2-50 times. In one implementation, passivation is performed by treating the substrate with an oxygen-containing reactant, activated in a plasma, and the tin oxide etching is performed by a chlorine-based chemistry, such as using a mixture of Cl2 and BCl3.Type: ApplicationFiled: November 17, 2022Publication date: June 22, 2023Inventors: Seongjun Heo, Jengyi Yu, Chen-Wei Liang, Alan J. Jensen, Samantha S.H. Tan
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Publication number: 20230045336Abstract: Methods for making thin-films on semiconductor substrates, may be patterned using EUV, include: depositing the organometallic polymer-like material onto the surface of the semiconductor substrate, exposing the surface to EUV to form a pattern, and developing the pattern for later transfer to underlying layers. The depositing operations may be performed by chemical vapor deposition (CVD), atomic layer deposition (ALD), and ALD with a CVD component, such as a discontinuous, ALD-like process in which metal precursors and counter-reactants are separated in either time or space.Type: ApplicationFiled: July 2, 2021Publication date: February 9, 2023Inventors: Jengyi Yu, Samantha S.H. Tan, Mohammed Haroon Alvi, Richard Wise, Yang Pan, Richard Alan Gottscho, Adrien LaVoie, Sivananda Krishnan Kanakasabapathy, Timothy William Weidman, Qinghuang Lin, Jerome S. Hubacek
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Publication number: 20230031955Abstract: Various embodiments described herein relate to methods, apparatus, and systems for treating metal-containing photoresist to modify material properties of the photoresist. For instance, the techniques herein may involve providing a substrate in a process chamber, where the substrate includes a photoresist layer over a substrate layer, and where the photoresist includes metal, and treating the photoresist to modify material properties of the photoresist such that etch selectivity in a subsequent post-exposure dry development process is increased. In various embodiments, the treatment may involve exposing the substrate to elevated temperatures and/or to a remote plasma. One or more process conditions such as temperature, pressure, ambient gas chemistry, gas flow/ratio, and moisture may be controlled during treatment to tune the material properties as desired.Type: ApplicationFiled: January 29, 2021Publication date: February 2, 2023Applicant: Lam Research CorporationInventors: Jengyi Yu, Da Li, Samantha S.H. Tan, Younghee Lee
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Patent number: 11551938Abstract: Tin oxide films are used as spacers and hardmasks in semiconductor device manufacturing. In one method, tin oxide layer (e.g., spacer footing) needs to be selectively etched in a presence of an exposed silicon-containing layer, such as SiOC, SiON, SiONC, amorphous silicon, SiC, or SiN. In order to reduce damage to the silicon-containing layer the process involves passivating the silicon-containing layer towards a tin oxide etch chemistry, etching the tin oxide, and repeating passivation and etch in an alternating fashion. For example, passivation and etch can be each performed between 2-50 times. In one implementation, passivation is performed by treating the substrate with an oxygen-containing reactant, activated in a plasma, and the tin oxide etching is performed by a chlorine-based chemistry, such as using a mixture of Cl2 and BCl3.Type: GrantFiled: June 22, 2020Date of Patent: January 10, 2023Assignee: Lam Research CorporationInventors: Seongjun Heo, Jengyi Yu, Chen-Wei Liang, Alan J. Jensen, Samantha S. H. Tan
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Publication number: 20220392747Abstract: Etching a refractory metal or other high surface binding energy material on a substrate can maintain or increase the smoothness of the metal/high EO surface, in some cases produce extreme smoothing. A substrate having an exposed refractory metal/high EO surface is provided. The refractory metal/high EO surface is exposed to a modification gas to modify the surface and form a modified refractory metal/high EO surface. The modified refractory metal/high EO surface is exposed to an energetic particle to preferentially remove the modified refractory metal/high EO surface relative to an underlying unmodified refractory metal/high EO surface such that the exposed refractory metal/high EO surface after removing the modified refractory metal/high EO surface is as smooth or smoother than the substrate surface before exposing the substrate surface to the modification gas.Type: ApplicationFiled: August 19, 2022Publication date: December 8, 2022Inventors: Wenbing Yang, Tamal Mukherjee, Mohand Brouri, Samantha S.H. Tan, Yang Pan, Keren Jacobs Kanarik
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Publication number: 20220282366Abstract: Provided herein are methods and related apparatus for depositing an ashable hard mask (AHM) on a substrate in a low pressure chamber using a dual frequency radio frequency component. Low pressure plasma enhanced chemical vapor deposition may be used to increase the etch selectivity of the AHM, permitting the use of a thinner AHM for semiconductor processing operations.Type: ApplicationFiled: August 28, 2020Publication date: September 8, 2022Applicant: Lam Research CorporationInventors: Matthew Scott Weimer, Ragesh Puthenkovilakam, Gordon Alex Macdonald, Shaoqing Zhang, Shih-Ked Lee, Jun Xue, Samantha S.H. Tan, Xizhu Zhao, Mary Anne Manumpil, Eric A. Hudson, Chin-Jui Hsu
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Publication number: 20220270877Abstract: A method of processing a substrate includes: providing a substrate having one or more mandrels comprising a mandrel material, wherein a layer of a spacer material coats horizontal surfaces and sidewalls of the one or more mandrels; and etching and completely removing the layer of the spacer material from the horizontal surfaces of the one or more mandrels and thereby exposing the mandrel material, without completely removing the spacer material residing at the sidewalls of the one or more mandrels. The etching includes exposing the substrate to a plasma formed using a mixture comprising a first gas and a polymer-forming gas, and wherein the etching comprises forming a polymer on the substrate. Polymer-forming gas may include carbon (C) and hydrogen (H).Type: ApplicationFiled: February 10, 2022Publication date: August 25, 2022Inventors: Jengyi Yu, Samantha S.H. Tan, Yu Jiang, Hui-Jung Wu, Richard Wise, Yang Pan, Nader Shamma, Boris Volosskiy
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Publication number: 20220216050Abstract: Provided herein are methods and systems for reducing roughness of an EUV resist and improving etched features. The methods involve descumming an EUV resist, filling divots of the EUV resist, and protecting EUV resists with a cap. The resulting EUV resist has smoother features and increased selectivity to an underlying layer, which improves the quality of etched features. Following etching of the underlying layer, the cap may be removed.Type: ApplicationFiled: April 14, 2020Publication date: July 7, 2022Applicant: Lam Research CorporationInventors: Jengyi Yu, Samantha S.H. Tan, Liu Yang, Chen-Wei Liang, Boris Volosskiy, Richard Wise, Yang Pan, Da Li, Ge Yuan, Andrew Liang
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Publication number: 20220208551Abstract: Tin oxide films are used as spacers and hardmasks in semiconductor device manufacturing. In one method, tin oxide layer (e.g., spacer footing) needs to be selectively etched in a presence of an exposed silicon-containing layer, such as SiOC, SiON, SiONC, amorphous silicon, SiC, or SiN. In order to reduce damage to the silicon-containing layer the process involves passivating the silicon-containing layer towards a tin oxide etch chemistry, etching the tin oxide, and repeating passivation and etch in an alternating fashion. For example, passivation and etch can be each performed between 2-50 times.Type: ApplicationFiled: June 22, 2020Publication date: June 30, 2022Inventors: Seongjun Heo, Jengyi Yu, Chen-Wei Liang, Alan J. Jensen, Samantha S.H. Tan
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Publication number: 20220165571Abstract: Tin oxide film on a semiconductor substrate is etched selectively with an etch selectivity of at least 10 in a presence of silicon (Si), carbon (C), or a carbon-containing material (e.g., photoresist) by exposing the substrate to a process gas comprising hydrogen (H2) and a hydrocarbon (e.g., at a hydrogen/hydrocarbon ratio of at least 5), such that a carbon-containing polymer is formed on the substrate. In some embodiments an apparatus for processing a semiconductor substrate includes a process chamber configured for housing the semiconductor substrate and a controller having program instructions on a non-transitory medium for causing selective etching of a tin oxide layer on a substrate in a presence of silicon, carbon, or a carbon-containing material by exposing the substrate to a plasma formed in a process gas that includes H2 and a hydrocarbon.Type: ApplicationFiled: February 10, 2022Publication date: May 26, 2022Inventors: Jengyi Yu, Samantha S.H. Tan, Yu Jiang, Hui-Jung Wu, Richard Wise, Yang Pan, Nader Shamma, Boris Volosskiy
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Patent number: 11322351Abstract: Tin oxide film on a semiconductor substrate is etched selectively in a presence of silicon (Si), carbon (C), or a carbon-containing material (e.g., photoresist) by exposing the substrate to a process gas comprising hydrogen (H2) and a hydrocarbon. The hydrocarbon significantly improves the etch selectivity. In some embodiments an apparatus for processing a semiconductor substrate includes a process chamber configured for housing the semiconductor substrate and a controller having program instructions on a non-transitory medium for causing selective etching of a tin oxide layer on a substrate in a presence of silicon, carbon, or a carbon-containing material by exposing the substrate to a plasma formed in a process gas that includes H2 and a hydrocarbon.Type: GrantFiled: November 18, 2019Date of Patent: May 3, 2022Assignee: Lam Research CorporationInventors: Jengyi Yu, Samantha S. H. Tan, Yu Jiang, Hui-Jung Wu, Richard Wise, Yang Pan, Nader Shamma, Boris Volosskiy
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Patent number: 11314168Abstract: This disclosure relates generally to a patterning structure including an underlayer and an imaging layer, as well as methods and apparatuses thereof. In particular embodiments, the underlayer provides an increase in radiation absorptivity and/or patterning performance of the imaging layer.Type: GrantFiled: January 11, 2021Date of Patent: April 26, 2022Assignee: Lam Research CorporationInventors: Samantha S. H. Tan, Jun Xue, Mary Anne Manumpil, Jengyi Yu, Da Li
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Publication number: 20220122846Abstract: Methods and apparatuses for performing cycles of aspect ratio dependent deposition and aspect ratio independent etching on lithographically patterned substrates are described herein. Methods are suitable for reducing variation of feature depths and/or aspect ratios between features formed and partially formed by lithography, some partially formed features being partially formed due to stochastic effects. Methods and apparatuses are suitable for processing a substrate having a photoresist after extreme ultraviolet lithography. Some methods involve cycles of deposition by plasma enhanced chemical vapor deposition and directional etching by atomic layer etching.Type: ApplicationFiled: December 23, 2021Publication date: April 21, 2022Inventors: Nader Shamma, Richard Wise, Jengyi Yu, Samantha S.H. Tan